title: Fast and low power Michelson interferometer thermo-optical switch on SOI.
abstract: We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.
authors.affiliation: Institute of Microelectronics, Agency for Science, Technology and Research,, 11 Science Park Road, Science Park II, Singapore 117685. songjf@ime.a-star.edu.sg
authors.forename: Junfeng
authors.initials: J
authors.lastname: Song
authors.forename: Q
authors.initials: Q
authors.lastname: Fang
authors.forename: S H
authors.initials: SH
authors.lastname: Tao
authors.forename: T Y
authors.initials: TY
authors.lastname: Liow
authors.forename: M B
authors.initials: MB
authors.lastname: Yu
authors.forename: G Q
authors.initials: GQ
authors.lastname: Lo
authors.forename: D L
authors.initials: DL
authors.lastname: Kwong
mesh_terms: D004867:Equipment Design; D006358:Hot Temperature; D007368:Interferometry / Q000295:instrumentation* / Q000379:methods*; D008855:Microscopy, Electron, Scanning; D055095:Optics and Photonics; D013696:Temperature