Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals.
In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF(4), LiLuF(4) and LiGdF(4) fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the (3)P(0) level. Exploiting the (3)P(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range.
Cornacchia
F
F
NEST-INFM-CNR, Dipartimento di Fisica dell'Università di Pisa, Largo B. Pontecorvo 3, 56127 Pisa, Italy. francesco.cornacchia@df.unipi.it
Di Lieto
A
A
Tonelli
M
M
Richter
A
A
Heumann
E
E
Huber
G
G
D003460:Crystallization; D004867:Equipment Design; D005459:Fluorides / Q000737:chemistry*; D005583:Fourier Analysis; D005708:Gallium / Q000737:chemistry*; D007477:Ions; D007834:Lasers; D008027:Light; D049449:Luminescence; D055095:Optics and Photonics; D010758:Phosphorus / Q000737:chemistry; D011221:Praseodymium / Q000737:chemistry*; D013053:Spectrophotometry / Q000379:methods; D013696:Temperature
D007477:Ions; C473348:gallium nitride; D010758:Phosphorus; D005708:Gallium; D011221:Praseodymium; D005459:Fluorides