title: Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing.
abstract: Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.
authors.affiliation: Quantum Optics Laboratory, Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea. hunskang@gist.ac.kr
authors.forename: Hoonsoo
authors.initials: H
authors.lastname: Kang
authors.forename: Jong Su
authors.initials: JS
authors.lastname: Kim
authors.forename: Sung In
authors.initials: SI
authors.lastname: Hwang
authors.forename: Young Ho
authors.initials: YH
authors.lastname: Park
authors.forename: Do-kyeong
authors.initials: DK
authors.lastname: Ko
authors.forename: Jongmin
authors.initials: J
authors.lastname: Lee
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004574:Electromagnetic Fields; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D055095:Optics and Photonics; D017785:Photons; D011789:Quantum Theory; D012666:Semiconductors; D013696:Temperature; D013997:Time Factors
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium