title: Directional emission InP/GaInAsP square-resonator microlasers.
abstract: InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mum-side square microlaser with a 2-mum-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0x10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. yzhuang@semi.ac.cn
authors.forename: Yong-Zhen
authors.initials: YZ
authors.lastname: Huang
authors.forename: Kai-Jun
authors.initials: KJ
authors.lastname: Che
authors.forename: Yue-De
authors.initials: YD
authors.lastname: Yang
authors.forename: Shi-Jiang
authors.initials: SJ
authors.lastname: Wang
authors.forename: Yun
authors.initials: Y
authors.lastname: Du
authors.forename: Zhong-Chao
authors.initials: ZC
authors.lastname: Fan