Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping.
Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol-gel route, show strong transient photocurrents under chopped sub-bandgap illumination (hnu=1.8 eV<Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.
Yang
Bin
B
Inst. of Materials Eng., Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234, Australia.
Luca
Vittorio
V