Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires.
Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.
Zhou
Jun
J
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Fei
Peng
P
Gu
Yudong
Y
Mai
Wenjie
W
Gao
Yifan
Y
Yang
Rusen
R
Bao
Gang
G
Wang
Zhong Lin
ZL
D004583:Electrons; D054023:Lasers, Semiconductor; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide