title: Passively mode-locked GaInNAs disk laser operating at 1220 nm.
abstract: We report an optically-pumped semiconductor disk laser passively mode-locked with a semiconductor saturable-absorber mirror. Both the absorber and the gain media were made of dilute nitride compound semiconductor, GaInNAs, which enables operation around 1.2 microm wavelengths. The laser generated 5 ps optical pulses with an average output power up to 275 mW. Our demonstration provides an attractive approach for efficiently generating red-wavelengths through external cavity frequency doubling.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN 33101. jussi.rautiainen@tut.fi
authors.forename: Jussi
authors.initials: J
authors.lastname: Rautiainen
authors.forename: Ville-Markus
authors.initials: VM
authors.lastname: Korpijärvi
authors.forename: Janne
authors.initials: J
authors.lastname: Puustinen
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina
authors.forename: Oleg
authors.initials: O
authors.lastname: Okhotnikov
mesh_terms: D001151:Arsenic / Q000737:chemistry*; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D008027:Light; D009584:Nitrogen / Q000737:chemistry*; D055095:Optics and Photonics; D011789:Quantum Theory; D012666:Semiconductors; D013053:Spectrophotometry / Q000379:methods; D013997:Time Factors
chemical_list: D007204:Indium; D005708:Gallium; D001151:Arsenic; D009584:Nitrogen