High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degrees.
Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18 degrees . Example designs were processed to 200 microm stripe-width lasers with an 8-mm-long optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter.
Pietrzak
Agnieszka
A
Ferdinand-Braun Institut fur Hochstfrequenztechnik, im Forschungsverbund Berlin e.V. Gustav-Kirchhoff-Strasse 4, Berlin, Germany. agnieszka.pietrzak@fbh-berlin.de
Wenzel
Hans
H
Erbert
Götz
G
Tränkle
Günther
G