Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing.
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.
Kang
Hoonsoo
H
Quantum Optics Laboratory, Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea. hunskang@gist.ac.kr
Kim
Jong Su
JS
Hwang
Sung In
SI
Park
Young Ho
YH
Ko
Do-kyeong
DK
Lee
Jongmin
J
D001152:Arsenicals / Q000737:chemistry*; D004574:Electromagnetic Fields; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D049449:Luminescence; D055095:Optics and Photonics; D017785:Photons; D011789:Quantum Theory; D012666:Semiconductors; D013696:Temperature; D013997:Time Factors
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium