title: Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires.
abstract: Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Jun
authors.initials: J
authors.lastname: Zhou
authors.forename: Peng
authors.initials: P
authors.lastname: Fei
authors.forename: Yudong
authors.initials: Y
authors.lastname: Gu
authors.forename: Wenjie
authors.initials: W
authors.lastname: Mai
authors.forename: Yifan
authors.initials: Y
authors.lastname: Gao
authors.forename: Rusen
authors.initials: R
authors.lastname: Yang
authors.forename: Gang
authors.initials: G
authors.lastname: Bao
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
mesh_terms: D004583:Electrons; D054023:Lasers, Semiconductor; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D015034:Zinc Oxide