CMOS-compatible fabrication of room-temperature single-electron devices.
Devices in which the transport and storage of single electrons are systematically controlled could lead to a new generation of nanoscale devices and sensors. The attractive features of these devices include operation at extremely low power, scalability to the sub-nanometre regime and extremely high charge sensitivity. However, the fabrication of single-electron devices requires nanoscale geometrical control, which has limited their fabrication to small numbers of devices at a time, significantly restricting their implementation in practical devices. Here we report the parallel fabrication of single-electron devices, which results in multiple, individually addressable, single-electron devices that operate at room temperature. This was made possible using CMOS fabrication technology and implementing self-alignment of the source and drain electrodes, which are vertically separated by thin dielectric films. We demonstrate clear Coulomb staircase/blockade and Coulomb oscillations at room temperature and also at low temperatures.
Ray
Vishva
V
Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA.
Subramanian
Ramkumar
R
Bhadrachalam
Pradeep
P
Ma
Liang-Chieh
LC
Kim
Choong-Un
CU
Koh
Seong Jin
SJ
D004563:Electrochemistry / Q000295:instrumentation; D004581:Electronics / Q000295:instrumentation*; D004583:Electrons; D004867:Equipment Design; D006046:Gold / Q000737:chemistry; D016252:Microscopy, Scanning Tunneling; D049329:Nanostructures; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods*; D010087:Oxides / Q000737:chemistry; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry; D013696:Temperature; D014173:Transistors, Electronic
D010087:Oxides; D017655:Silicon Compounds; C116473:silicon monoxide; D006046:Gold