Transverse-junction superluminescent diodes at the 1.1 microm wavelength regime.
We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 microm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.
Guol
Shi-Hao
SH
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.
Wang
Jr-Hung
JH
Wu
Yu-Huei
YH
Lin
Wei
W
Yang
Ying-Jay
YJ
Sun
Chi-Kuang
CK
Shi
Jin-Wei
JW
D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors