Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.
It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.
Zaleszczyk
Wojciech
W
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland. wzal@ifpan.edu.pl
Janik
Elzbieta
E
Presz
Adam
A
Dłuzewski
Piotr
P
Kret
Sławomir
S
Szuszkiewicz
Wojciech
W
Morhange
Jean-François
JF
Dynowska
Elzbieta
E
Kirmse
Holm
H
Neumann
Wolfgang
W
Petroutchik
Aleksy
A
Baczewski
Lech T
LT
Karczewski
Grzegorz
G
Wojtowicz
Tomasz
T