Improved efficiency Si-photonic attenuator.
A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator.
Zheng
D W
DW
Kotura, inc, 2630 corporate place, Monterey Park, CA 91754, USA. dzheng@kotura.com
Smith
B T
BT
Asghari
M
M
D003198:Computer Simulation; D017076:Computer-Aided Design; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D055096:Optical Devices; D017785:Photons; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
D012825:Silicon