Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.
It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland. wzal@ifpan.edu.pl
Wojciech
W
Zaleszczyk
Elzbieta
E
Janik
Adam
A
Presz
Piotr
P
Dłuzewski
Sławomir
S
Kret
Wojciech
W
Szuszkiewicz
Jean-François
JF
Morhange
Elzbieta
E
Dynowska
Holm
H
Kirmse
Wolfgang
W
Neumann
Aleksy
A
Petroutchik
Lech T
LT
Baczewski
Grzegorz
G
Karczewski
Tomasz
T
Wojtowicz