Sub-10 nm nanoimprint lithography by wafer bowing.
We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact module, which we have constructed and demonstrated with an overlay and resolution of <0.5 microm and <10 nm, respectively. In the short term, this wafer bowing approach makes nanoimprint lithography much more accessible to a broad range of researchers. More importantly, this approach eliminates machine movement other than wafer bowing and shortens the mechanical path; these will enable the achievement of excellent patterning and overlay at a much lower cost. In the long term, wafer bowing is extensible to step-and-repeat printing for volume manufacturing.
HP Laboratories, Hewlett-Packard Co., Palo Alto, California 94304, USA. wei.wu@hp.com
Wei
W
Wu
William M
WM
Tong
Jonathan
J
Bartman
Yufeng
Y
Chen
Robert
R
Walmsley
Zhaoning
Z
Yu
Qiangfei
Q
Xia
Inkyu
I
Park
Carl
C
Picciotto
Jun
J
Gao
Shih-Yuan
SY
Wang
Deborah
D
Morecroft
Joel
J
Yang
Karl K
KK
Berggren
R Stanley
RS
Williams