Sub-10 nm nanoimprint lithography by wafer bowing.
We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact module, which we have constructed and demonstrated with an overlay and resolution of <0.5 microm and <10 nm, respectively. In the short term, this wafer bowing approach makes nanoimprint lithography much more accessible to a broad range of researchers. More importantly, this approach eliminates machine movement other than wafer bowing and shortens the mechanical path; these will enable the achievement of excellent patterning and overlay at a much lower cost. In the long term, wafer bowing is extensible to step-and-repeat printing for volume manufacturing.
Wu
Wei
W
HP Laboratories, Hewlett-Packard Co., Palo Alto, California 94304, USA. wei.wu@hp.com
Tong
William M
WM
Bartman
Jonathan
J
Chen
Yufeng
Y
Walmsley
Robert
R
Yu
Zhaoning
Z
Xia
Qiangfei
Q
Park
Inkyu
I
Picciotto
Carl
C
Gao
Jun
J
Wang
Shih-Yuan
SY
Morecroft
Deborah
D
Yang
Joel
J
Berggren
Karl K
KK
Williams
R Stanley
RS