Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique.
An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2 catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO2 prepared by the impregnation method.
Chen
Ching-Shiun
CS
Center for General Education, Chang Gung University, 259 Wen-Hwa 1st Rd., Kwei-shan, Tao-Yuan, Taiwan 333, Republic of China. cschen@mail.cgu.edu.tw
Lin
Jarrn-Horng
JH
Lai
Tzu-Wen
TW
Lai
Tzn-Wen
TW