title: Epitaxial ternary nitride thin films prepared by a chemical solution method.
abstract: It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.
authors.affiliation: Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors.forename: Hongmei
authors.initials: H
authors.lastname: Luo
authors.forename: Haiyan
authors.initials: H
authors.lastname: Wang
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Bi
authors.forename: David M
authors.initials: DM
authors.lastname: Feldmann
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Wang
authors.forename: Anthony K
authors.initials: AK
authors.lastname: Burrell
authors.forename: T Mark
authors.initials: TM
authors.lastname: McCleskey
authors.forename: Eve
authors.initials: E
authors.lastname: Bauer
authors.forename: Marilyn E
authors.initials: ME
authors.lastname: Hawley
authors.forename: Quanxi
authors.initials: Q
authors.lastname: Jia