title: 12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode.
abstract: We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.
authors.affiliation: Electronics & Telecommunications research Institute, Daejeon 305-350, Korea.
authors.forename: Jong-Bum
authors.initials: JB
authors.lastname: You
authors.forename: Miran
authors.initials: M
authors.lastname: Park
authors.forename: Jeong-Woo
authors.initials: JW
authors.lastname: Park
authors.forename: Gyungock
authors.initials: G
authors.lastname: Kim