title: Grafting of phosphonate groups on the silica surface for the elaboration of ion-sensitive field-effect transistors.
abstract: Ion-sensitive field-effect transistors (ISFETs) sensitive to Ca(2+) ions could be elaborated by means of a new grafting process of the phosphonate group at the surface of the silica gate of FETs. A grafting process involving only one chemical reaction step at the surface afforded a significant improvement of the ISFET properties. The sensitivity of the ISFET towards Ca(2+) ions at pH 10 was quasi-linear in the concentration range from 10(-1) to 10(-3) M, and the slope was 10 mV pCa(-1). The site-binding model works well in predicting the experimental data, giving the complexation constant of 10(2.7) and a low value of the grafting density. The origin of the poor response of ISFETs sensitized by means of a multistep grafting process was investigated on silica powders of high specific area: the cleavage of the organic grafts at the SiOSi bonds occurring at each step could be disclosed by means of elemental analyses, infrared, and cross-polarization and magic angle spinning nuclear magnetic resonance of the grafts.
authors.affiliation: Laboratoire des Matériaux Organiques à Propriétés Spécifiques, UMR 5041 CNRS-Université de Savoie, BP 24, 69390 Vernaison, France; Ingénierie et Fonctionnalisation des Surfaces, IFoS, Ecole centrale de Lyon, BP 163, Ecully, France.
authors.forename: Z
authors.initials: Z
authors.lastname: Elbhiri
authors.forename: Y
authors.initials: Y
authors.lastname: Chevalier
authors.forename: J M
authors.initials: JM
authors.lastname: Chovelon
authors.forename: N
authors.initials: N
authors.lastname: Jaffrezic-Renault