title: Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers.
abstract: We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
authors.affiliation: Department of Nonlinear Science, ATR Wave Engineering Laboratories, Soraku-gun, Kyoto, Japan. choi@atr.jp
authors.forename: Muhan
authors.initials: M
authors.lastname: Choi
authors.forename: Susumu
authors.initials: S
authors.lastname: Shinohara
authors.forename: Takahisa
authors.initials: T
authors.lastname: Harayama