Spectrographic analysis of boron nitride for trace impurities.
A d.c. arc emission spectrographic method has been developed for the determination of nine trace impurities in boron nitride. The charge for exciting the sample contains equal quantities of boron nitride and graphite (containing 2% NaF as carrier and 1% La(2)O(3) as an internal standard). The method is useful in the determination of impurities in the range 2-1000 ppm, with a mean relative standard deviation of 13%.
Vengsarkar
B R
BR
Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Bombay-400085, India.
Machado
I J
IJ
Malhotra
S K
SK