Study of the self-assembling of n-octylphosphonic acid layers on aluminum oxide.
The deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski-Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS.
Hauffman
Tom
T
Department ofMetallurgy, Electrochemistry and Materials Science, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussels, Belgium. thauffma@vub.ac.be
Blajiev
Orlin
O
Snauwaert
Johan
J
van Haesendonck
Chris
C
Hubin
Annick
A
Terryn
Herman
H
D000537:Aluminum Oxide / Q000737:chemistry*; D008567:Membranes, Artificial; D018625:Microscopy, Atomic Force; D063065:Organophosphonates / Q000737:chemistry*; D010316:Particle Size; D013053:Spectrophotometry; D013499:Surface Properties; D014965:X-Rays
D008567:Membranes, Artificial; D063065:Organophosphonates; C539181:n-octylphosphonic acid; D000537:Aluminum Oxide