Sputtering of GaAs single crystals by 8-16 keV argon ions.
An apparatus for the measurement of sputtering yields (S) of single crystals of GaAs bombarded by argon ions is described. The dependence of S on target temperature and ion energy and the anisotropic nature of the sputtering at high temperature is discussed.
Farren
J
J
Analytical Sciences Division, U.K.A.E.A. Research Group, Atomic Energy Research Establishment, Harwell, U.K.
Scaife
W J
WJ