Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers.
We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.
Choi
Muhan
M
Department of Nonlinear Science, ATR Wave Engineering Laboratories, Soraku-gun, Kyoto, Japan. choi@atr.jp
Shinohara
Susumu
S
Harayama
Takahisa
T