title: Sputtering of GaAs single crystals by 8-16 keV argon ions.
abstract: An apparatus for the measurement of sputtering yields (S) of single crystals of GaAs bombarded by argon ions is described. The dependence of S on target temperature and ion energy and the anisotropic nature of the sputtering at high temperature is discussed.
authors.affiliation: Analytical Sciences Division, U.K.A.E.A. Research Group, Atomic Energy Research Establishment, Harwell, U.K.
authors.forename: J
authors.initials: J
authors.lastname: Farren
authors.forename: W J
authors.initials: WJ
authors.lastname: Scaife