Finite-element study of strain field in strained-Si MOSFET.
The strain field in the channel of a p-type metal-oxide-semiconductor field effect transistor fabricated by integrating Ge pre-amorphization implantation for source/drain regions is evaluated using a finite-element method combining with large angle convergent-beam electron diffraction (LACBED). The finite-element calculation shows that there is a very large compressive strain in the top layer of the channel region caused by a low dose of Ge ion implantation in the source and drain extension regions. Moreover, a transition region is formed in the bottom of the channel region and the top of the Si substrate. These calculation results are in good agreement with the LACBED experiments.
Liu
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Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, P.O. Box 603, Beijing 100080, China.
Duan
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Xu
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