title: Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor.
abstract: An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.
authors.affiliation: Department of Biological Science and Technology, National Chiao Tung University, Hsinchu, 300, Taiwan.
authors.forename: Chih-Heng
authors.initials: CH
authors.lastname: Lin
authors.forename: Cheng-Yun
authors.initials: CY
authors.lastname: Hsiao
authors.forename: Cheng-Hsiung
authors.initials: CH
authors.lastname: Hung
authors.forename: Yen-Ren
authors.initials: YR
authors.lastname: Lo
authors.forename: Cheng-Che
authors.initials: CC
authors.lastname: Lee
authors.forename: Chun-Jung
authors.initials: CJ
authors.lastname: Su
authors.forename: Horng-Chin
authors.initials: HC
authors.lastname: Lin
authors.forename: Fu-Hsiang
authors.initials: FH
authors.lastname: Ko
authors.forename: Tiao-Yuan
authors.initials: TY
authors.lastname: Huang
authors.forename: Yuh-Shyong
authors.initials: YS
authors.lastname: Yang
mesh_terms: D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods*; D004298:Dopamine / Q000032:analysis*; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D004298:Dopamine; D012825:Silicon