Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor.
An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.
Lin
Chih-Heng
CH
Department of Biological Science and Technology, National Chiao Tung University, Hsinchu, 300, Taiwan.
Hsiao
Cheng-Yun
CY
Hung
Cheng-Hsiung
CH
Lo
Yen-Ren
YR
Lee
Cheng-Che
CC
Su
Chun-Jung
CJ
Lin
Horng-Chin
HC
Ko
Fu-Hsiang
FH
Huang
Tiao-Yuan
TY
Yang
Yuh-Shyong
YS
D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods*; D004298:Dopamine / Q000032:analysis*; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D004298:Dopamine; D012825:Silicon