An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data.
An accurate analytical approximation to the capacitance transient amplitude measured by deep level transient spectroscopy as a function of the filling pulse duration is derived. The equation includes the influence of a defect concentration profile and the nonexponential trapping in the Debye tail of the depletion region. Because this equation gives an accurate approximation for all filling pulse lengths it is possible to use it for the fitting of experimental data in capture cross-section measurements. The method is implemented in a fitting routine and is demonstrated for the E1-level in Fe-implanted n-type germanium.
Lauwaert
J
J
Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent, Belgium.
Van Gheluwe
J
J
Clauws
P
P