Rapid photoreflectance spectroscopy for strained silicon metrology.
We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.
Chouaib
H
H
Optical Metrology Innovations Ltd., 2200 Cork Airport Business Park, Cork Airport, Co. Cork, Ireland. houssam.chouaib@kla-tencor.com
Murtagh
M E
ME
Guènebaut
V
V
Ward
S
S
Kelly
P V
PV
Kennard
M
M
Le Vaillant
Y M
YM
Somekh
M G
MG
Pitter
M C
MC
Sharples
S D
SD