Contrast mechanism due to interface trapped charges for a buried SiO2 microstructure in scanning electron microscopy.
We clarify the scanning electron microscopic contrast mechanism for imaging a buried SiO(2) trench microstructure with interface trapped charges by simulating both electron scattering and transport. Here, the interface trapped charges make the SiO(2) film more negatively charged and increase excess holes in the space charge distribution of the electron scattering region. The generated positive surface electric field thus redistributes some emitted secondary electrons and results in the dark contrast. This contrast mechanism is validated by comparing with experiments, and it may also provide an interesting approach for imaging and detecting deep interface trapped charges in insulating films.
Zhang
Hai-Bo
HB
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. hbzhang@mail.xjtu.edu.cn
Li
Wei-Qin
WQ
Wu
Dan-Wei
DW