Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics.
Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
van der Meulen
Machteld I
MI
Materials and Supercritical Fluids Group, Department of Chemistry, and the Tyndall National Institute, University College Cork, Cork, Ireland.
Petkov
Nikolay
N
Morris
Michael A
MA
Kazakova
Olga
O
Han
Xinhai
X
Wang
Kang L
KL
Jacob
Ajey P
AP
Holmes
Justin D
JD
D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013499:Surface Properties
D046911:Macromolecular Substances; D005857:Germanium; D008345:Manganese