title: Free carrier lifetime modification for silicon waveguide based devices.
abstract: We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.
authors.affiliation: Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK. Nicholas.wright@surrey.ac.uk
authors.forename: N M
authors.initials: NM
authors.lastname: Wright
authors.forename: D J
authors.initials: DJ
authors.lastname: Thomson
authors.forename: K L
authors.initials: KL
authors.lastname: Litvinenko
authors.forename: W R
authors.initials: WR
authors.lastname: Headley
authors.forename: A J
authors.initials: AJ
authors.lastname: Smith
authors.forename: A P
authors.initials: AP
authors.lastname: Knights
authors.forename: J H B
authors.initials: JH
authors.lastname: Deane
authors.forename: F Y
authors.initials: FY
authors.lastname: Gardes
authors.forename: G Z
authors.initials: GZ
authors.lastname: Mashanovich
authors.forename: R
authors.initials: R
authors.lastname: Gwilliam
authors.forename: G T
authors.initials: GT
authors.lastname: Reed