Epitaxial growth of znO nanowires over the ZnO thin films deposited on the Si and sapphire substrates.
Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.
Park
No-Kuk
NK
School of Chemical Engineering and Technology, Yeungnam University, Gyeongsan 712-749, Korea.
Lee
You Jin
YJ
Jung
Ji Young
JY
Lee
Won Guen
WG
Bae
Young Je
YJ
Yoon
Suk Hoon
SH
Han
Gi Bo
GB
Ryu
Si Ok
SO
Lee
Tae Jin
TJ