title: Titanium dioxide thin films deposited by plasma enhanced atomic layer deposition for OLED passivation.
abstract: Plasma enhanced atomic layer deposition (PEALD) of titanium dioxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 degrees C. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium dioxide film was 0.8 A/cycle, and the water vapor transmission rate (WTVR) for a 80 nm titanium dioxide film was 0.023 g/m2 day. The passivation performance of the titanium dioxide film was investigated using an organic light-emitting diode (OLED). The coated OLED lifetime was 90 h, 15 times longer than that of an uncoated sample.
authors.affiliation: Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Republic of Korea.
authors.forename: Woong-Sun
authors.initials: WS
authors.lastname: Kim
authors.forename: Myoung-Gyun
authors.initials: MG
authors.lastname: Ko
authors.forename: Tae-Sub
authors.initials: TS
authors.lastname: Kim
authors.forename: Sang-Kyun
authors.initials: SK
authors.lastname: Park
authors.forename: Yeon-Keon
authors.initials: YK
authors.lastname: Moon
authors.forename: Su-Hwan
authors.initials: SH
authors.lastname: Lee
authors.forename: Jae-Gun
authors.initials: JG
authors.lastname: Park
authors.forename: Jong-Wan
authors.initials: JW
authors.lastname: Park