title: Femtosecond laser photo-response of Ge23Sb7S70 films.
abstract: Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS(4/2), GeS(4), S-S and S(3)Ge-S-GeS(3) units.
authors.affiliation: College of Optics/CREOL, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA. troy@creol.ucf.edu
authors.forename: Troy
authors.initials: T
authors.lastname: Anderson
authors.forename: Laeticia
authors.initials: L
authors.lastname: Petit
authors.forename: Nathan
authors.initials: N
authors.lastname: Carlie
authors.forename: Jiyeon
authors.initials: J
authors.lastname: Choi
authors.forename: Juejun
authors.initials: J
authors.lastname: Hu
authors.forename: Anu
authors.initials: A
authors.lastname: Agarwal
authors.forename: Lionel
authors.initials: L
authors.lastname: Kimerling
authors.forename: Kathleen
authors.initials: K
authors.lastname: Richardson
authors.forename: Martin
authors.initials: M
authors.lastname: Richardson