On-film formation of bi nanowires with extraordinary electron mobility.
A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm(2)/(V s) and a mean free path of 1.35 mum in a 120 nm Bi nanowire, were observed at room temperature.
Shim
Wooyoung
W
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea.
Ham
Jinhee
J
Lee
Kyoung-Il
KI
Jeung
Won Young
WY
Johnson
Mark
M
Lee
Wooyoung
W
D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004579:Electron Transport; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D001729:Bismuth