title: 300 mm reference wafer fabrication by using direct laser lithography.
abstract: We propose a new method based on direct laser lithography to fabricate reference chromium patterns on a silicon wafer. Our method is able to fabricate a maximum 360-mm-diameter pattern with 651-nm-position uncertainty. The minimum pattern size is about 0.8 microm (linewidth value) and the maximum available height of the pattern is slightly over 400 nm.
authors.affiliation: Space Optics Research Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea. hrhee@kriss.re.kr
authors.forename: Hyug-Gyo
authors.initials: HG
authors.lastname: Rhee
authors.forename: Dongik
authors.initials: D
authors.lastname: Kim
authors.forename: Seung-Ki
authors.initials: SK
authors.lastname: Hong
authors.forename: Yun-Woo
authors.initials: YW
authors.lastname: Lee