title: Organic thin film transistor using a photo-curable organic/inorganic hybrid material as a gate dielectric.
abstract: A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/VN s was obtained with the device.
authors.affiliation: Department of Applied Chemistry, Kumoh National Institute of Technology, Kumi 730-701, Korea.
authors.forename: Do-Hoon
authors.initials: DH
authors.lastname: Hwang
authors.forename: Yong Suk
authors.initials: YS
authors.lastname: Yang
authors.forename: Jeong-Ik
authors.initials: JI
authors.lastname: Lee
authors.forename: Seong Hyun
authors.initials: SH
authors.lastname: Kim
authors.forename: Oun-Ho
authors.initials: OH
authors.lastname: Park
authors.forename: Ho-Cheol
authors.initials: HC
authors.lastname: Kim
authors.forename: Victor
authors.initials: V
authors.lastname: Lee
authors.forename: Geraud
authors.initials: G
authors.lastname: Dubois
authors.forename: Robert D
authors.initials: RD
authors.lastname: Miller