Identifying atomic geometry and electronic structure of (2 x 3)-Sr/Si(100) surface and its initial oxidation.
We present a joint experimental and theoretical study on the geometric and electronic states and the initial oxidation of the (2x3)-Sr/Si(100) surface. With scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) measurements combined with ab initio calculations, the atomic geometry and the electronic states of the (2x3)-Sr/Si(100) surface are identified. The dimerization of the Si atoms in the single atom row based on a (1x3) Si substrate model plays a critical role in stabilization of the surface structure and in determining the electronic properties. At the very initial oxidation of the surface, four features corresponding to the primary adsorption and oxidation sites are determined. Three of them are corresponding to the most favored oxidation sites with single oxygen molecules, whose local density of states gives semiconducting behavior. One is corresponding to the oxidation site with two oxygen molecules, whose local density of states gives metallic behavior. These features all exhibit dark spots with different shapes in the occupied state images but display either dark spots or bright protrusions depending on the different oxidation sites in the empty state images. Compared with the theoretical calculations, the plausible adsorption and oxidation models are proposed.
Du
Wenhan
W
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Wang
Bing
B
Xu
Lei
L
Hu
Zhenpeng
Z
Cui
Xuefeng
X
Pan
B C
BC
Yang
Jinlong
J
Hou
J G
JG