title: >1 MW peak power single-mode high-brightness passively Q-switched Nd 3+:YAG microchip laser.
abstract: A high-brightness diode end-pumped Nd:YAG microchip laser, passively Q-switched by a Cr(4+):YAG saturable absorber (SA), has been developed. The dependences of pulse energy and width were investigated based on theoretical verification to enhance the peak power. As a result, the peak power exceeded 1.2 MW with M(2) = 1.04 and spectrum width Delta lambda < 5.1 pm at a repetition rate of 100 Hz. Brightness of 98 TW/sr x cm(2) was obtained with a supplied average electrical power of 2.3 W. The peak power increased up to 2.1 MW with M(2) = 1.36. Peak power of 1.7 MW was obtained from a 2-cm-diameter x 5-cm-long monolithic laser head.
authors.affiliation: Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu, Shizuoka, 434-8601, Japan. h-sakai@crl.hpk.co.jp
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Sakai
authors.forename: Hirohumi
authors.initials: H
authors.lastname: Kan
authors.forename: Takunori
authors.initials: T
authors.lastname: Taira