title: A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas.
abstract: The application of a pulse shaped biasing method implemented to a capacitive probe is described. This approach delivers an accurate and simple way to determine ion fluxes in diverse plasma mixtures. To prove the reliability of the method, the ion probe was used in a different configuration, namely, a planar Langmuir probe. In this configuration, the ion current was directly determined from the I-V characteristic and compared with the ion current measured with the pulse shaped ion probe. The results from both measurements are in excellent agreement. It is demonstrated that the capacitive probe is able to perform spatially resolved ion flux measurements under high deposition rate conditions (2-20 nm/s) in a remote expanding thermal plasma in Ar/NH(3)/SiH(4) mixture.
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands. m.c.petcu@tue.nl
authors.forename: M C
authors.initials: MC
authors.lastname: Petcu
authors.forename: A C
authors.initials: AC
authors.lastname: Bronneberg
authors.forename: A
authors.initials: A
authors.lastname: Sarkar
authors.forename: M A
authors.initials: MA
authors.lastname: Blauw
authors.forename: M
authors.initials: M
authors.lastname: Creatore
authors.forename: M C M
authors.initials: MC
authors.lastname: van de Sanden
mesh_terms: D011211:Electric Power Supplies; D004560:Electricity; D004577:Electron Probe Microanalysis / Q000295:instrumentation / Q000379:methods; D007477:Ions; D012015:Reference Standards; D017655:Silicon Compounds / Q000737:chemistry
chemical_list: D007477:Ions; D017655:Silicon Compounds; C032734:silicon nitride