High precision differential measurement of surface photovoltage transients on ultrathin CdS layers.
Time-resolved surface photovoltage (SPV) is an important method for studying charge separation, for example, in nanostructured semiconductors. High precision differential measurement of SPV transients was realized with two identical measurement capacitors and high-impedance buffers. In addition, logarithmic readout and averaging procedures were implemented for single transients over eight magnitudes in time. As a model system ultrathin CdS layers were investigated. The thickness dependencies of the SPV amplitudes and that of the dominating relaxation mechanisms are demonstrated and discussed.
Dittrich
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Helmholtz-Zentrum Berlin fur Materialien und Energie, Berlin, Germany.
Bönisch
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Zabel
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D019187:Cadmium Compounds / Q000737:chemistry*; D025802:Electric Capacitance; D017097:Electric Impedance; D004560:Electricity; D004566:Electrodes; D004867:Equipment Design; D005459:Fluorides / Q000737:chemistry; D005898:Glass / Q000737:chemistry; D007834:Lasers; D012666:Semiconductors; D012680:Sensitivity and Specificity; D013440:Sulfides / Q000737:chemistry*; D013499:Surface Properties; D013997:Time Factors; D017971:Tin Compounds / Q000737:chemistry
D019187:Cadmium Compounds; D013440:Sulfides; D017971:Tin Compounds; C034939:cadmium sulfide; C045358:stannic oxide; D005459:Fluorides