title: Growth, processing, and optical properties of epitaxial Er2O3 on silicon.
abstract: Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er(3+) density 100 x greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er (2)O(3) epitaxially grown on silicon. A peak Er(3+) resonant absorption of 364 dB/cm at 1535 nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm.
authors.affiliation: Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA. cmichael@caltech.edu
authors.forename: C P
authors.initials: CP
authors.lastname: Michael
authors.forename: H B
authors.initials: HB
authors.lastname: Yuen
authors.forename: V A
authors.initials: VA
authors.lastname: Sabnis
authors.forename: T J
authors.initials: TJ
authors.lastname: Johnson
authors.forename: R
authors.initials: R
authors.lastname: Sewell
authors.forename: R
authors.initials: R
authors.lastname: Smith
authors.forename: A
authors.initials: A
authors.lastname: Jamora
authors.forename: A
authors.initials: A
authors.lastname: Clark
authors.forename: S
authors.initials: S
authors.lastname: Semans
authors.forename: P B
authors.initials: PB
authors.lastname: Atanackovic
authors.forename: O
authors.initials: O
authors.lastname: Painter