300 mm reference wafer fabrication by using direct laser lithography.
We propose a new method based on direct laser lithography to fabricate reference chromium patterns on a silicon wafer. Our method is able to fabricate a maximum 360-mm-diameter pattern with 651-nm-position uncertainty. The minimum pattern size is about 0.8 microm (linewidth value) and the maximum available height of the pattern is slightly over 400 nm.
Rhee
Hyug-Gyo
HG
Space Optics Research Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea. hrhee@kriss.re.kr
Kim
Dongik
D
Hong
Seung-Ki
SK
Lee
Yun-Woo
YW