title: Effect of annealing on morphology and photoluminescence of beta-Ga2O3 nanostructures.
abstract: A novel method was applied to prepare one-dimensional beta-Ga2O3 nanostructure films. In this method, beta-Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga22O3/Mo films for differernt time under flowing ammonia. The as-synthesized beta-Ga2O3 nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectrum. The results show that the formed nanostructures are single-crystalline Ga2O3 with monoclinic structure. The annealing time of the samples has an evident influence on the morphology and optical property of the nanostructured beta-Ga2O3 synthesized. The representative photoluminescence spectrum at room temperature exhibits a strong and broad emission band centered at 411.5 nm and a relatively weak emission peak located at 437.6 nm. The growth mechanism of the beta-Ga2O3 nanostructured materials is also discussed briefly.
authors.affiliation: Institute of Semiconductors, Shandong Normal University, Ji'nan 250014, P. R. China.
authors.forename: Shiying
authors.initials: S
authors.lastname: Zhang
authors.forename: Huizhao
authors.initials: H
authors.lastname: Zhuang
authors.forename: Chengshan
authors.initials: C
authors.lastname: Xue
authors.forename: Baoli
authors.initials: B
authors.lastname: Li