title: Growth and characterization of manganese doped gallium nitride nanowires.
abstract: Manganese doped GaN nanowires have been grown by chemical vapour transport method on sapphire (0001) substrates in the temperature range of 800-1050 degrees C. The surface features of nanowires have been investigated using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray analysis (EDAX), Raman scattering studies and Electron Paramagnetic Resonance (EPR). SEM images showed that the morphology of the one dimensional materials included straight nanorods and nanowires around 70-80 nm. Raman spectrum showed the GaMnN vibrational modes at 380, 432 and 445 cm(-1). EPR measurements were performed on Mn doped GaN nanowires in order to evaluate the magnetic behaviour.
authors.affiliation: Crystal Growth Centre, Anna University, Chennai 600025, India.
authors.forename: V Suresh
authors.initials: VS
authors.lastname: Kumar
authors.forename: R
authors.initials: R
authors.lastname: Kesavamoorthy
authors.forename: J
authors.initials: J
authors.lastname: Kumar