title: Rapid photoreflectance spectroscopy for strained silicon metrology.
abstract: We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.
authors.affiliation: Optical Metrology Innovations Ltd., 2200 Cork Airport Business Park, Cork Airport, Co. Cork, Ireland. houssam.chouaib@kla-tencor.com
authors.forename: H
authors.initials: H
authors.lastname: Chouaib
authors.forename: M E
authors.initials: ME
authors.lastname: Murtagh
authors.forename: V
authors.initials: V
authors.lastname: Guènebaut
authors.forename: S
authors.initials: S
authors.lastname: Ward
authors.forename: P V
authors.initials: PV
authors.lastname: Kelly
authors.forename: M
authors.initials: M
authors.lastname: Kennard
authors.forename: Y M
authors.initials: YM
authors.lastname: Le Vaillant
authors.forename: M G
authors.initials: MG
authors.lastname: Somekh
authors.forename: M C
authors.initials: MC
authors.lastname: Pitter
authors.forename: S D
authors.initials: SD
authors.lastname: Sharples