Femtosecond laser photo-response of Ge23Sb7S70 films.
Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS(4/2), GeS(4), S-S and S(3)Ge-S-GeS(3) units.
Anderson
Troy
T
College of Optics/CREOL, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA. troy@creol.ucf.edu
Petit
Laeticia
L
Carlie
Nathan
N
Choi
Jiyeon
J
Hu
Juejun
J
Agarwal
Anu
A
Kimerling
Lionel
L
Richardson
Kathleen
K
Richardson
Martin
M