Photo-patternable titanium doped organic-inorganic hybrid gate dielectric in organic thin film transistors.
Solution processable and photo-patternable titanium doped organic-inorganic hybrid material (MDT hybrimer) was prepared by simple sol-gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV crosslinking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V(-1)s(-1), -14 V, 1.6 Vdec.(-1), and 3 x 10(6), respectively.
Choi
Chaun Gi
CG
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea.
Bae
Byeong-Soo
BS