Growth, processing, and optical properties of epitaxial Er2O3 on silicon.
Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er(3+) density 100 x greater. We report the growth, processing, material characterization, and optical properties of single-crystal Er (2)O(3) epitaxially grown on silicon. A peak Er(3+) resonant absorption of 364 dB/cm at 1535 nm with minimal background loss places a high limit on potential gain. Using high-quality microdisk resonators, we conduct thorough C/L-band radiative efficiency and lifetime measurements and observe strong upconverted luminescence near 550 and 670 nm.
Michael
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Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA. cmichael@caltech.edu
Yuen
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Sabnis
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Johnson
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Sewell
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Smith
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Jamora
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Clark
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Semans
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Atanackovic
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Painter
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