Electrical characterization of ZnO single nanowire device for chemical sensor application.
Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO2 gas response was reported at the elevated temperature.
Kim
E K
EK
Electronics and Telecommunications Research Institute, Daejeon, 305-700, Korea.
Lee
H Y
HY
Moon
S E
SE
Park
J
J
Park
S J
SJ
Kwak
J H
JH
Maeng
S
S
Park
K H
KH
Kim
J
J
Kim
S W
SW
Ji
H J
HJ
Kim
G T
GT
D015374:Biosensing Techniques / Q000295:instrumentation*; D003460:Crystallization; D004560:Electricity; D004563:Electrochemistry / Q000379:methods; D008855:Microscopy, Electron, Scanning; D008956:Models, Chemical; D036103:Nanotechnology / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D012666:Semiconductors; D013696:Temperature; D014961:X-Ray Diffraction; D015032:Zinc / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
D015032:Zinc; D015034:Zinc Oxide