title: High speed hybrid silicon evanescent Mach-Zehnder modulator and switch.
abstract: We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation.
authors.affiliation: Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. hwchen@ece.ucsb.edu
authors.forename: Hui-Wen
authors.initials: HW
authors.lastname: Chen
authors.forename: Ying-hao
authors.initials: YH
authors.lastname: Kuo
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008962:Models, Theoretical; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*