Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module.
We investigated low-hydrogen SiN films prepared by a low temperature (350 degrees C) PECVD method. The impact of SiH(4)/N(2) flow ratio and radio frequency power on the hydrogen content in the SiN films was studied. In this work, we demonstrated a low-loss sub-micron SiN waveguide by using the corresponding optimal SiN films. The propagation loss was found to be as low as -2.1+/-0.2 dB/cm at 1550 nm with waveguide cross-section of 700 nm x 400 nm. The results suggest that the SiN films grown by PECVD with low hydrogen can be used in photonics integrated circuits for new generation communications applications.
Mao
S C
SC
Institute of Microelectronics, A*STAR, 11 Science Park II, Singapore.
Tao
S H
SH
Xu
Y L
YL
Sun
X W
XW
Yu
M B
MB
Lo
G Q
GQ
Kwong
D L
DL
D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006859:Hydrogen / Q000737:chemistry*; D008027:Light; D008962:Models, Theoretical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D055096:Optical Devices; D012542:Scattering, Radiation; D017655:Silicon Compounds / Q000737:chemistry*
D017655:Silicon Compounds; D006859:Hydrogen; C032734:silicon nitride