title: Diode-pumped passively Q-switched and mode-locked Nd:GdVO4 laser at 1.34 microm with V:YAG saturable absorber.
abstract: Using V:YAG as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GdVO(4) laser at 1.34 microm is realized. Nearly 100% modulation depth of mode-locking has been achieved. The width of the mode-locked pulse is estimated to be less than 460 ps with 125 MHz repetition rate within an about 1 micros-long Q-switched pulse envelope. A maximum output power of 220 mW and Q-switched pulse energy of 10.5 microJ is obtained. Using the hyperbolic secant function methods, a fluctuation rate equation model considering the Gaussian distribution of the intracavity photon density and the population inversion in the gain medium as well as the ground-state population intensity of the saturable absorber has been proposed to describe the mode-locking process of diode-pumped Nd:GdVO(4)/V(3+):YAG laser. With the space-dependent rate equations solved numerically, the theoretical calculations reproduce the laser characteristics well.
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, PR China. k.j.yang@sdu.edu.cn
authors.forename: Kejian
authors.initials: K
authors.lastname: Yang
authors.forename: Shengzhi
authors.initials: S
authors.lastname: Zhao
authors.forename: Jingliang
authors.initials: J
authors.lastname: He
authors.forename: Baitao
authors.initials: B
authors.lastname: Zhang
authors.forename: Chunhua
authors.initials: C
authors.lastname: Zuo
authors.forename: Guiqiu
authors.initials: G
authors.lastname: Li
authors.forename: Dechun
authors.initials: D
authors.lastname: Li
authors.forename: Ming
authors.initials: M
authors.lastname: Li
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D008027:Light; D008962:Models, Theoretical; D012542:Scattering, Radiation