Single GaAs/GaAsP coaxial core-shell nanowire lasers.
Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.
Hua
Bin
B
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan. hua@rciqe.hokudai.ac.jp
Motohisa
Junichi
J
Kobayashi
Yasunori
Y
Hara
Shinjiroh
S
Fukui
Takashi
T
D001152:Arsenicals / Q000737:chemistry*; D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007834:Lasers; D054023:Lasers, Semiconductor; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium