title: Porous silicon as functionalized material for immunosensor application.
abstract: Recently, for sensor application, porous silicon has received a great deal of attention due to the high specific surface area and the easy fabrication using some established processes of the usual silicon technology. We herein, report the development of a novel immunosensors based on porous silicon for antigen detection. The multilayer immunosensor structure was fabricated following the successive steps: APTS self-assembled monolayer (SAM) layer, glutaaldehyde linker, anti-rabbit IgG binding. The insulating properties of the aminopropyl-triethoxysilane (APTS) monolayer were studied with cyclic voltammetry and the molecular structure was characterized with Fourier-transform infrared (FTIR) technique. The binding between antibody and different antigen concentration (rabbit IgG) was monitored by measuring the capacitance-voltage curve of the antibody functionalized EIS structure. A detection limit of 10ng/ml of antigen can be detected.
authors.affiliation: LPSCM, Faculté des Sciences de Monastir, Route de kairouan, 5000 Monastir, Tunisia.
authors.forename: O
authors.initials: O
authors.lastname: Meskini
authors.forename: A
authors.initials: A
authors.lastname: Abdelghani
authors.forename: A
authors.initials: A
authors.lastname: Tlili
authors.forename: R
authors.initials: R
authors.lastname: Mgaieth
authors.forename: N
authors.initials: N
authors.lastname: Jaffrezic-Renault
authors.forename: C
authors.initials: C
authors.lastname: Martelet