title: Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer.
abstract: A novel fabrication process has been developed for fabricating undercut-etched electroabsorption modulators that are compatible with tunable lasers. This process allows for the incorporation of highly doped p-type InGaAs above the upper cladding as an ohmic contact layer. The EAM demonstrates significant improvement in the microwave performance with little effect on modulation efficiency due to the undercut etching. This device uses a traveling wave electrode design with an integrated, matched termination resistor to demonstrate a 34 GHz 3-dB bandwidth for a 600 microm long modulator.
authors.affiliation: University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA. dummer@engineering.ucsb.edu
authors.forename: Matthew M
authors.initials: MM
authors.lastname: Dummer
authors.forename: James R
authors.initials: JR
authors.lastname: Raring
authors.forename: Jonathan
authors.initials: J
authors.lastname: Klamkin
authors.forename: Anna
authors.initials: A
authors.lastname: Tauke-Pedretti
authors.forename: Larry A
authors.initials: LA
authors.lastname: Coldren
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D004581:Electronics / Q000295:instrumentation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008027:Light; D008962:Models, Theoretical; D055096:Optical Devices; D012542:Scattering, Radiation; D014159:Transducers
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide