Structures of planar defects in ZnO nanobelts and nanowires.
Quasi-one-dimensional (1D) nanostructures, such as nanowires, nanobelts and nanorods, are the forefront materials for nanotechnology. To date, such nanostructures have been synthesized for a wide range of semiconductors and oxides, and they are potential building blocks for fabricating numerous nano-scale devices. 1D ZnO nanostructures, due to its unique semiconducting, piezoelectric, and bio-safe properties, have received wide attention. From structure point of view, a common characteristic of ZnO nanostructures is that they are mostly dislocation-free. However, planar and point defects do frequently exist in such nanostructures. The objective of this paper is to present detailed electron microscopy study about the structures of planar defects, such as stacking faults, twins, inversion domain walls that existed in 1D ZnO nanostructures. These planar defects are important for understanding the growth mechanism and relevant physical and possibly chemical properties of 1D ZnO nanostructures.
Ding
Yong
Y
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
Wang
Zhong Lin
ZL
D003460:Crystallization; D053768:Metal Nanoparticles / Q000737:chemistry / Q000648:ultrastructure; D046529:Microscopy, Electron, Transmission; D036103:Nanotechnology / Q000379:methods; D053770:Nanowires / Q000737:chemistry / Q000648:ultrastructure; D015032:Zinc / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
D015032:Zinc; D015034:Zinc Oxide