title: CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes.
abstract: Massive aligned carbon nanotubes hold great potential but also face significant integration/assembly challenges for future beyond-silicon nanoelectronics. We report a wafer-scale processing of aligned nanotube devices and integrated circuits, including progress on essential technological components such as wafer-scale synthesis of aligned nanotubes, wafer-scale transfer of nanotubes to silicon wafers, metallic nanotube removal and chemical doping, and defect-tolerant integrated nanotube circuits. We have achieved synthesis of massive aligned nanotubes on complete 4 in. quartz and sapphire substrates, which were then transferred to 4 in. Si/SiO(2) wafers. CMOS analogous fabrication was performed to yield transistors and circuits with features down to 0.5 mum, with high current density approximately 20 muA/mum and good on/off ratios. In addition, chemical doping has been used to build fully integrated complementary inverter with a gain approximately 5, and a defect-tolerant design has been employed for NAND and NOR gates. This full-wafer approach could serve as a critical foundation for future integrated nanotube circuits.
authors.affiliation: Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA.
authors.forename: Koungmin
authors.initials: K
authors.lastname: Ryu
authors.forename: Alexander
authors.initials: A
authors.lastname: Badmaev
authors.forename: Chuan
authors.initials: C
authors.lastname: Wang
authors.forename: Albert
authors.initials: A
authors.lastname: Lin
authors.forename: Nishant
authors.initials: N
authors.lastname: Patil
authors.forename: Lewis
authors.initials: L
authors.lastname: Gomez
authors.forename: Akshay
authors.initials: A
authors.lastname: Kumar
authors.forename: Subhasish
authors.initials: S
authors.lastname: Mitra
authors.forename: H-S Philip
authors.initials: HS
authors.lastname: Wong
authors.forename: Chongwu
authors.initials: C
authors.lastname: Zhou
mesh_terms: D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008904:Miniaturization; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances