title: P-wave-enhanced spin field effect transistor and recent patents.
abstract: P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. The mechanism of the p-wave enhancement in AlGaN/GaN heterostructure was investigated. The recent development and related patents in the spin-polarized field-effect transistor were reviewed. In particular, we will focus on the recent patents which could enhance p-wave probability and control of spin precession of 2DEG in the AlGaN/GaN transistor structure.
authors.affiliation: Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.
authors.forename: Ming-Hong
authors.initials: MH
authors.lastname: Gau
authors.forename: Ikai
authors.initials: I
authors.lastname: Lo
authors.forename: Wan-Tsang
authors.initials: WT
authors.lastname: Wang
authors.forename: Jih-Chen
authors.initials: JC
authors.lastname: Chiang
authors.forename: Mitch Ming-Chi
authors.initials: MM
authors.lastname: Chou
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D004583:Electrons; D005740:Gases; D010330:Patents as Topic; D014173:Transistors, Electronic
chemical_list: D005740:Gases