title: Tunable surface band gap in Mg(x)Zn(1-x)O thin films.
abstract: Mg(x)Zn(1-x)O thin films epitaxially grown on Mo(110) substrate under ultrahigh vacuum condition were studied in situ by various surface analysis techniques including x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and high resolution electron energy loss spectroscopy. The results indicate that as-grown Mg(x)Zn(1-x)O films are soluble phase, and a phase transition from wurtzite to cubic structure occurs in the region of x = 0.55-0.67. The surface band gap can be tuned continuously with altering the content of Mg in Mg(x)Zn(1-x)O films, and its tunable window width is about 1.9 eV. Based on heterojunction and quantum well structure, this kind of materials can be applied in wide-band-gap semiconductor devices, such as short-wavelength light-emitting devices.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China.
authors.forename: Mingshan
authors.initials: M
authors.lastname: Xue
authors.forename: Qinlin
authors.initials: Q
authors.lastname: Guo
authors.forename: Kehui
authors.initials: K
authors.lastname: Wu
authors.forename: Jiandong
authors.initials: J
authors.lastname: Guo