title: 2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion.
abstract: We report a wafer fused high power optically pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 microm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jussi.rautiainen@tut.fi
authors.forename: Jussi
authors.initials: J
authors.lastname: Rautiainen
authors.forename: Jari
authors.initials: J
authors.lastname: Lyytikäinen
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Alexandru
authors.initials: A
authors.lastname: Mereuta
authors.forename: Andrei
authors.initials: A
authors.lastname: Caliman
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov