title: Antiferromagnetic ground state of a C(60)-covered Si(001) surface.
abstract: Modeling magnetism: The antiferromagnetic ground state of the C(60)/Si(001)-c(4x4) surface is predicted by means of density functional theory calculations. Two adjacent dangling bonds (DBs) generated by the adsorption of C(60) are antiferromagnetically coupled with each other. This study demonstrates that magnetic Si surfaces can be prepared by engineering single Si DBs with unpaired electrons.
authors.affiliation: BK21 Program Division of Advanced Research and Education in Physics and Research Institute of Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.
authors.forename: Ji Young
authors.initials: JY
authors.lastname: Lee
authors.forename: Jun-Hyung
authors.initials: JH
authors.lastname: Cho
authors.forename: Myung Ho
authors.initials: MH
authors.lastname: Kang