Dual-surfactant effect to enhance p-type doping in III-V semiconductor thin films.
Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower significantly the doping energy of Zn in GaP, while neither Sb nor H can function alone as an effective surfactant. Our finding suggests a general strategy for enhancing p-type doping of III-V semiconductors by using a metallic-element with H as dual surfactants.
Zhu
J Y
JY
Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA.
Liu
Feng
F
Stringfellow
G B
GB