2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion.
We report a wafer fused high power optically pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 microm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.
Rautiainen
Jussi
J
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jussi.rautiainen@tut.fi
Lyytikäinen
Jari
J
Sirbu
Alexei
A
Mereuta
Alexandru
A
Caliman
Andrei
A
Kapon
Eli
E
Okhotnikov
Oleg G
OG