title: Surface profile control of the autocloned photonic crystal by ion-beam-sputter deposition with radio-frequency-bias etching.
abstract: Growth of the autocloned Ta(2)O(5)/SiO(2) multilayer photonic crystal with a lateral sawtooth period was simulated. Ion-beam sputter (IBS) was applied to deposit the films and radio-frequency-bias (RF-bias) etching was applied simultaneously with the IBS on the Ta(2)O(5) film. Both simulation and experiment showed that the quality of the autocloning can be controlled by the RF-bias power; there is an intermediate power range within which the drop of peak-to-valley height variation of the sawtooth profile can be reduced significantly such that a high degree of autocloning can be achieved. Analysis showed that simultaneous deposition and etching at the proper RF-bias power on the Ta(2)O(5) film has the capability to compensate the flattening effect of the SiO(2) deposition such that the sawtooth surface profile can be maintained.
authors.affiliation: Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Chen Yang
authors.initials: CY
authors.lastname: Huang
authors.forename: Hao
authors.initials: H
authors.lastname: Min Ku
authors.forename: Shiuh
authors.initials: S
authors.lastname: Chao