Photoluminescence, thermal transport, and breakdown in joule-heated GaN nanowires.
Thermal transport and breakdown in Joule-heated GaN nanowires is investigated using a combination of microphotoluminescence and in situ TEM characterization. The thermal conductivity of the nanowires is estimated to be <80 W/m.K, which is substantially below the bulk GaN value. Catastrophic breakdown in individual nanowires is observed to occur at a maximum temperature of approximately 1000 K, and nanowire morphology near the breakdown region indicates that failure occurs via thermal decomposition, a conclusion that is validated by in situ TEM images obtained during the failure process.
Westover
Tyler
T
Sandia National Laboratories, Livermore, California 94550, and Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
Jones
Reese
R
Huang
J Y
JY
Wang
George
G
Lai
Elaine
E
Talin
A Alec
AA
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D006358:Hot Temperature; D008163:Luminescent Measurements / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D013814:Thermal Conductivity
D046911:Macromolecular Substances; C473348:gallium nitride; D005708:Gallium