title: Long-lived spin coherence in silicon with an electrical spin trap readout.
abstract: Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0>8.5 T) and low temperatures (T=2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 mus, 50 times longer than the previous maximum for electrically detected spin readout experiments.
authors.affiliation: London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom.
authors.forename: G W
authors.initials: GW
authors.lastname: Morley
authors.forename: D R
authors.initials: DR
authors.lastname: McCamey
authors.forename: H A
authors.initials: HA
authors.lastname: Seipel
authors.forename: L-C
authors.initials: LC
authors.lastname: Brunel
authors.forename: J
authors.initials: J
authors.lastname: van Tol
authors.forename: C
authors.initials: C
authors.lastname: Boehme