title: Stacking-faults-free zinc Blende GaAs nanowires.
abstract: Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.
authors.affiliation: Braun Center for Submicron Research and Electron Microscopy Unit, Weizmann Institute of Science, Rehovot, Israel. hadas.shtrikman@weizmann.ac.il
authors.forename: Hadas
authors.initials: H
authors.lastname: Shtrikman
authors.forename: Ronit
authors.initials: R
authors.lastname: Popovitz-Biro
authors.forename: Andrey
authors.initials: A
authors.lastname: Kretinin
authors.forename: Moty
authors.initials: M
authors.lastname: Heiblum
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D015032:Zinc / Q000737:chemistry
chemical_list: D001152:Arsenicals; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium; D015032:Zinc