title: Evidence of a transition from nonlinear to linear screening of a two-dimensional electron system detected by photoluminescence spectroscopy.
abstract: We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Yamaguchi
authors.forename: S
authors.initials: S
authors.lastname: Nomura
authors.forename: T
authors.initials: T
authors.lastname: Maruyama
authors.forename: S
authors.initials: S
authors.lastname: Miyashita
authors.forename: Y
authors.initials: Y
authors.lastname: Hirayama
authors.forename: H
authors.initials: H
authors.lastname: Tamura
authors.forename: T
authors.initials: T
authors.lastname: Akazaki