Surface profile control of the autocloned photonic crystal by ion-beam-sputter deposition with radio-frequency-bias etching.
Growth of the autocloned Ta(2)O(5)/SiO(2) multilayer photonic crystal with a lateral sawtooth period was simulated. Ion-beam sputter (IBS) was applied to deposit the films and radio-frequency-bias (RF-bias) etching was applied simultaneously with the IBS on the Ta(2)O(5) film. Both simulation and experiment showed that the quality of the autocloning can be controlled by the RF-bias power; there is an intermediate power range within which the drop of peak-to-valley height variation of the sawtooth profile can be reduced significantly such that a high degree of autocloning can be achieved. Analysis showed that simultaneous deposition and etching at the proper RF-bias power on the Ta(2)O(5) film has the capability to compensate the flattening effect of the SiO(2) deposition such that the sawtooth surface profile can be maintained.
Huang
Chen Yang
CY
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan.
Min Ku
Hao
H
Chao
Shiuh
S