Imaging molecular orbitals by scanning tunneling microscopy on a passivated semiconductor.
Decoupling the electronic properties of a molecule from a substrate is of crucial importance for the development of single-molecule electronics. This is achieved here by adsorbing pentacene molecules at low temperature on a hydrogenated Si(100) surface (12 K). The low temperature (5 K) scanning tunneling microscope (STM) topography of the single pentacene molecule at the energy of the highest occupied molecular orbital (HOMO) tunnel resonance clearly resembles the native HOMO of the free molecule. The negligible electronic coupling between the molecule and the substrate is confirmed by theoretical STM topography and diffusion barrier energy calculations.
Bellec
Amandine
A
Laboratoire de Photophysique Moleculaire, CNRS, Bat. 210, Universite Paris Sud, 91405 Orsay, France, and CEMES-CNRS, 29 rue J. Marvig, P.O. Box 4347, F-31055 Toulouse Cedex, France. amandine.bellec@u-psud.fr
Ample
Francisco
F
Riedel
Damien
D
Dujardin
Gérald
G
Joachim
Christian
C
D004563:Electrochemistry / Q000379:methods*; D007089:Image Enhancement / Q000379:methods*; D008422:Materials Testing / Q000379:methods; D016252:Microscopy, Scanning Tunneling / Q000379:methods*; D015336:Molecular Probe Techniques; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors