Doping limits of grown in situ doped silicon nanowires using phosphine.
Structural characterization and electrical measurements of silicon nanowires (SiNWs) synthesized by Au catalyzed vapor-liquid-solid growth using silane and axially doped in situ with phosphine are reported. We demonstrate that highly n-doped SiNWs can be grown without structural defects and high selectivity and find that addition of the dopant reduces the growth rate by less than 8% irrespective of the radius. This indicates that also the dopant incorporation is radius-independent. On the basis of electrical measurements on individual wires, contact resistivities as low as 1.2 x 10(-7) omega cm(-2) were extracted. Resistivity measurements reveal a reproducible donor incorporation of up to 1.5 x 1020 cm-3 using a gas phase ratios of Si/P = 1.5 x 10(-2). Higher dopant gas concentrations did not lead to an increase of the doping concentration beyond 1.5 x10(20) cm(-3).
Schmid
Heinz
H
IBM Research GmbH, Zurich Research Laboratory, Sumerstrasse 4, 8803 Rschlikon, Switzerland. sih@zurich.ibm
Björk
Mikael T
MT
Knoch
Joachim
J
Karg
Siegfried
S
Riel
Heike
H
Riess
Walter
W
D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D010720:Phosphines; C044646:phosphine; D012825:Silicon