Fluorine diffusion assisted by diffusing silicon on the Si(111)-(7x7) surface.
The diffusion process of fluorine (F) atoms on the Si(111)-(7x7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.
Fujikawa
Y
Y
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. fujika-0@imr.tohoku.ac.jp
Kuwano
S
S
Nakayama
K S
KS
Nagao
T
T
Sadowski
J T
JT
Bahktizin
R Z
RZ
Sakurai
T
T
Asari
Y
Y
Nara
J
J
Ohno
T
T