title: [Raman spectra studies of MBE-grown n-GaAs/SI-GaAs films].
abstract: n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory.
authors.affiliation: TEDA Applied Physics School, Nankai University, Tianjin 300457, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Wang
authors.forename: Xiao-xuan
authors.initials: XX
authors.lastname: Xu
authors.forename: Zhe
authors.initials: Z
authors.lastname: Qin
authors.forename: Ning
authors.initials: N
authors.lastname: Song
authors.forename: Cun-zhou
authors.initials: CZ
authors.lastname: Zhang