title: Unexpected benefits of rapid growth rate for III-V nanowires.
abstract: In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.
authors.affiliation: Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT 0200, Australia. hjj109@rsphysse.anu.edu.au
authors.forename: Hannah J
authors.initials: HJ
authors.lastname: Joyce
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: H Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
authors.forename: Yong
authors.initials: Y
authors.lastname: Kim
authors.forename: Melodie A
authors.initials: MA
authors.lastname: Fickenscher
authors.forename: Saranga
authors.initials: S
authors.lastname: Perera
authors.forename: Thang Ba
authors.initials: TB
authors.lastname: Hoang
authors.forename: Leigh M
authors.initials: LM
authors.lastname: Smith
authors.forename: Howard E
authors.initials: HE
authors.lastname: Jackson
authors.forename: Jan M
authors.initials: JM
authors.lastname: Yarrison-Rice
authors.forename: Xin
authors.initials: X
authors.lastname: Zhang
authors.forename: Jin
authors.initials: J
authors.lastname: Zou