title: Fluorine diffusion assisted by diffusing silicon on the Si(111)-(7x7) surface.
abstract: The diffusion process of fluorine (F) atoms on the Si(111)-(7x7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. fujika-0@imr.tohoku.ac.jp
authors.forename: Y
authors.initials: Y
authors.lastname: Fujikawa
authors.forename: S
authors.initials: S
authors.lastname: Kuwano
authors.forename: K S
authors.initials: KS
authors.lastname: Nakayama
authors.forename: T
authors.initials: T
authors.lastname: Nagao
authors.forename: J T
authors.initials: JT
authors.lastname: Sadowski
authors.forename: R Z
authors.initials: RZ
authors.lastname: Bahktizin
authors.forename: T
authors.initials: T
authors.lastname: Sakurai
authors.forename: Y
authors.initials: Y
authors.lastname: Asari
authors.forename: J
authors.initials: J
authors.lastname: Nara
authors.forename: T
authors.initials: T
authors.lastname: Ohno