Operation of graphene transistors at gigahertz frequencies.
Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.
Lin
Yu-Ming
YM
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598. yming@us.ibm.com
Jenkins
Keith A
KA
Valdes-Garcia
Alberto
A
Small
Joshua P
JP
Farmer
Damon B
DB
Avouris
Phaedon
P
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008872:Microwaves; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D006108:Graphite