title: Charge carrier separation in modulation doped coaxial semiconductor nanowires.
abstract: Complementary doped donor and acceptor dipoles effectively generate confinement potentials for carriers across a p-type/intrinsic/n-type coaxial nanowire due to the lineup of charge neutrality level. In order to verify this physical picture, we employ first-principles density functional theory to study the confinement of electrons and holes in complementary boron (p-type) and phosphorus (n-type) doped coaxial silicon nanowires. An analysis of the charge density distributions reveals that the electrons and holes are spatially separated in core and outer shell regions, respectively, in conformity with a type-II lineup of band structures.
authors.affiliation: Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314, USA.
authors.forename: A
authors.initials: A
authors.lastname: Nduwimana
authors.forename: Xiao-Qian
authors.initials: XQ
authors.lastname: Wang
mesh_terms: D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004579:Electron Transport; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon