Effect of annealing on orientation of Bi 3.2 Sm 0.8 Ti 3 O 12 ferroelectric film prepared by sol-gel process.
Fatigue-free Bi(3.2)Sm(0.8)Ti(3)O(12) ferroelectric thin films were prepared on p-Si(100) substrate using a sol-gel deposition process. The formation and orientation of thin films were studied upon annealing conditions with XRD and SEM. Experiment results indicate that after preannealing at 400 degrees C for 10 min, annealing at 700 degrees C resulted in formation of strong a-axis oriented films. The orientation degree, I(200)/I(117), remarkably increases from 1.033 to 1.76 and 6.49 with increasing annealing time from 3 to 10 and 15 min respectively. However, only (117)-oriented films were produced by annealing films at 900 degrees C for 3 min without the preannealing.
He
Haiyan Y
HY
School of Materials Science and Engineering, Shaanxi University of Science and Technology, PR China. hehy@sust.edu.cn
Huang
Jianfeng F
JF
Cao
Liyun Y
LY
Wu
Jianpeng P
JP
D016880:Anisotropy; D001729:Bismuth / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D006358:Hot Temperature; D008280:Magnetics; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010330:Patents as Topic; D044367:Phase Transition
D001729:Bismuth