title: Clinical effect of low-energy double-pass 1450 nm laser treatment for acne in Asians.
abstract: BACKGROUND
  While the 1450 nm diode laser is highly effective for the treatment of acne, its use is associated with considerable pain. Low-energy, double-pass irradiation was attempted as an alternative to prevent the occurrence of pain as an adverse effect.
  
  
  OBJECTIVE
  This study aimed to evaluate the clinical efficacy of low-energy, double-pass, 1450 nm diode laser treatment in the treatment of acne in Asian patients.
  
  
  METHODS
  Thirty Japanese patients with inflammatory acne were treated with the low-energy, double-pass, 1450 nm diode laser at 2-4-week intervals. An open study was performed in patients that underwent at least five and up to 10 treatment sessions. The clinical effect was assessed using an acne grading scale.
  
  
  RESULTS
  Of the 30 patients, 27 completed the study. The mean acne grades decreased from 3.9 to 1.4 (P<0.01) in the 27 patients. The pain was tolerated by 25 patients, and two patients required local anesthesia. No remarkable side effects occurred in any of the patients; all but a few patients had transient faint erythema.
  
  
  CONCLUSIONS
  Low-energy, double-pass therapy is an alternative method that is beneficial for patients who complain of considerable pain. Furthermore, the method may have a lower risk of transient hyperpigmentation induced by cryogen spray, even in Asian patients who tend to develop inflammatory pigmentation.
authors.affiliation: Geriatric and Environmental Dermatology, Nagoya City University of Medical Sciences, Nagoya, Japan. r-nobo@med.nagoya-cu.ac.jp
authors.forename: Reiko
authors.initials: R
authors.lastname: Noborio
authors.forename: Emi
authors.initials: E
authors.lastname: Nishida
authors.forename: Akimichi
authors.initials: A
authors.lastname: Morita
mesh_terms: D000152:Acne Vulgaris / Q000473:pathology / Q000532:radiotherapy*; D044466:Asian People; D004307:Dose-Response Relationship, Radiation; D006801:Humans; D054023:Lasers, Semiconductor / Q000627:therapeutic use*; D028022:Low-Level Light Therapy