Plasmon-enhanced emission from optically-doped MOS light sources.
We evaluate the spontaneous emission rate (Purcell) enhancement for optically-doped metal-dielectric-semiconductor light-emitting structures by considering the behavior of a semiclassical oscillating point dipole placed within the dielectric layer. For a Ag-SiO(2)-Si structure containing emitters at the center of a 20-nm-thick SiO(2) layer, spontaneous emission rate enhancements of 40 to 60 can be reached in the wavelength range of 600 to 1800 nm, far away from the surface plasmon resonance; similar enhancements are also possible if Al is used instead of Ag. For dipoles contained in the thin oxide layer of a Ag-SiO(2)-Si-SiO(2) structure, the emission exhibits strong preferential coupling to a single well-defined Si waveguide mode. This work suggests a means of designing a new class of power-efficient, high-modulation-speed, CMOS-compatible optical sources that take full advantage of the excellent electrical properties and plasmon-enhanced op cal properties afforded by MOS devices.
Hryciw
Aaron
A
Geballe Laboratory for Advanced Materials, Stanford University Stanford, CA 94305, USA.
Jun
Young Chul
YC
Brongersma
Mark L
ML
D007700:Kinetics; D008027:Light; D046208:Microchip Analytical Procedures; D036103:Nanotechnology / Q000379:methods; D055095:Optics and Photonics; D010087:Oxides; D012666:Semiconductors; D012825:Silicon; D012822:Silicon Dioxide; D012834:Silver; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
D010087:Oxides; D012834:Silver; D012822:Silicon Dioxide; D012825:Silicon