GaAs core--shell nanowires for photovoltaic applications.
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
Czaban
Josef A
JA
Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada L8S 4L7.
Thompson
David A
DA
LaPierre
Ray R
RR
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003460:Crystallization / Q000379:methods*; D011211:Electric Power Supplies; D004563:Electrochemistry / Q000379:methods*; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D010777:Photochemistry / Q000379:methods*
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium