title: Nanodevices based on silicon nanowires.
abstract: Silicon nanowires (SiNWs) have been demonstrated as one of the promising building blocks for future nanodevices such as field effect transistors, solar cells, sensors and lithium battery; much progress has been made in this field during last decades. In this review paper, the synthesis and physical properties of SiNWs are introduced briefly. Significant advances of SiNWs-related nanodevices reported in recent literature and registered patents are reviewed. The latest development and prospects of SiNWs-related nanodevices are also discussed.
authors.affiliation: Department of Physics, Zhejiang University, Hangzhou 310027, PR China.
authors.forename: Yuting
authors.initials: Y
authors.lastname: Wan
authors.forename: Jian
authors.initials: J
authors.lastname: Sha
authors.forename: Bo
authors.initials: B
authors.lastname: Chen
authors.forename: Yanjun
authors.initials: Y
authors.lastname: Fang
authors.forename: Zongli
authors.initials: Z
authors.lastname: Wang
authors.forename: Yewu
authors.initials: Y
authors.lastname: Wang
mesh_terms: D004563:Electrochemistry / Q000295:instrumentation / Q000639:trends*; D004581:Electronics / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation* / Q000639:trends; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010330:Patents as Topic; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon