title: Influence of Mg doping on GaN nanowires.
abstract: Magnesium-doped GaN nanowires with different dopant concentrations are synthesized by ammoniating Ga(2)O(3) thin films doped with Mg at 900 degrees C. Scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) are employed to characterize the influences on the morphology, structure, crystallinity, and optical properties of Mg-doped GaN nanowires. The results demonstrate that the nanowires are single-crystalline with hexagonal wurzite structure. GaN nanowires doped with 5 atom % of Mg have the best morphology and crystallinity with a single-crystalline structure, and at this composition the PL spectrum with the strongest UV peak is observed. The growth mechanism of crystalline GaN nanowires is discussed briefly.
authors.affiliation: Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China. dong_dong5870@163.com
authors.forename: Dongdong
authors.initials: D
authors.lastname: Zhang
authors.forename: Chengshan
authors.initials: C
authors.lastname: Xue
authors.forename: Huizhao
authors.initials: H
authors.lastname: Zhuang
authors.forename: Haibo
authors.initials: H
authors.lastname: Sun
authors.forename: Yuping
authors.initials: Y
authors.lastname: Cao
authors.forename: Yinglong
authors.initials: Y
authors.lastname: Huang
authors.forename: Zouping
authors.initials: Z
authors.lastname: Wang
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang