title: Diameter-dependent electron mobility of InAs nanowires.
abstract: Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance, therefore leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to <10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
authors.forename: Alexandra C
authors.initials: AC
authors.lastname: Ford
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.forename: Yu-Chih
authors.initials: YC
authors.lastname: Tseng
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Jeffrey
authors.initials: J
authors.lastname: Bokor
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004579:Electron Transport; D007204:Indium / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide