Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers.
In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(111)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at approximately 100 degrees C. The quality of resulting Al2O3 films is comparable to Al2O3 on SiO2. Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD.
Li
Meng
M
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Dai
Min
M
Chabal
Yves J
YJ
D000537:Aluminum Oxide / Q000737:chemistry*; D002264:Carboxylic Acids / Q000737:chemistry*; D013055:Spectrophotometry, Infrared
D002264:Carboxylic Acids; D000537:Aluminum Oxide