Correlation between in Situ Raman scattering and electrical conductance for an individual double-walled carbon nanotube.
In situ Raman scattering is performed on an individual semiconducting double-walled carbon nanotube (DWNT) in a field-effect transistor (FET) geometry, while the transfer characteristics of the DWNT-FET are measured. Through studying the Raman spectra with response to forward and backward gate voltage (V(gs)) sweeping, respectively, we observe hysteresis loops in the curves of G(-) peak frequency and the intensity ratio of G(-) to G(+) (I(G(-))/I(G(+))) as a function of V(gs). These loops correlate very well with the hysteretic transfer characteristics of the device. The clear correlations suggest that G(-) peak line width and I(G(-))/I(G(+)) increase with the carrier concentration in the DWNT induced by V(gs). In addition, unique G(-) peak line width variations with V(gs) can be attributed to interband electron transitions between the energy bands of two concentric shells of the DWNT excited by G phonons.
Yuan
Shaoning
S
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, S1-B2c-20, 639798, Singapore.
Zhang
Qing
Q
You
Yumeng
Y
Shen
Ze-Xiang
ZX
Shimamoto
Daisuke
D
Endo
Morinobu
M
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013059:Spectrum Analysis, Raman / Q000379:methods*; D013223:Statistics as Topic; D013499:Surface Properties
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon