title: 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film.
abstract: The distribution of Mn in a Ga(0.963)Mn(0.037)As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga(0.963)Mn(0.037)As are uniformly dissolved without forming any nanometer-sized clusters.
authors.affiliation: Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Kodzuka
authors.forename: T
authors.initials: T
authors.lastname: Ohkubo
authors.forename: K
authors.initials: K
authors.lastname: Hono
authors.forename: F
authors.initials: F
authors.lastname: Matsukura
authors.forename: H
authors.initials: H
authors.lastname: Ohno