Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination.
We report the demonstration of a reflection microscope that operates at 13.2 nm wavelength with a spatial resolution of 55+/-3 nm. The microscope uses illumination from a tabletop extreme ultraviolet laser to acquire aerial images of photolithography masks with a 20 s exposure time. The modulation transfer function of the optical system was characterized.
Brizuela
F
F
National Science Foundation Engineering Research Center for Extreme Ultraviolet Science and Technology, Colorado State University, Fort Collins, CO 80523, USA. brizuela@engr.colostate.edu
Wang
Y
Y
Brewer
C A
CA
Pedaci
F
F
Chao
W
W
Anderson
E H
EH
Liu
Y
Y
Goldberg
K A
KA
Naulleau
P
P
Wachulak
P
P
Marconi
M C
MC
Attwood
D T
DT
Rocca
J J
JJ
Menoni
C S
CS