title: Phosphorescence enhancement triggered by pi stacking in solid-state [Cu(N-N)(P-P)]BF4 complexes.
abstract: In this article, we report a phosphorescence enhancement phenomenon of [Cu(N-N)(P-P)]BF4 complexes in the solid state. The phosphorescence enhancement phenomenon is composed of three features: (1) an obvious emission blue shift, (2) a greatly enhanced photoluminescence quantum yield, and (3) a longer excited-state lifetime. Systematic analyses prove that the main cause of this phenomenon is nonradiative process suppression triggered by the pi stacking between [Cu(N-N)(P-P)]BF4 molecules. The phosphorescence enhancement widely exists in [Cu(N-N)(P-P)]BF4 complexes because of the pi surfaces in their diimine ligands.
authors.affiliation: Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, PR China.
authors.forename: Liming
authors.initials: L
authors.lastname: Zhang
authors.forename: Bin
authors.initials: B
authors.lastname: Li
authors.forename: Zhongmin
authors.initials: Z
authors.lastname: Su
mesh_terms: D003300:Copper / Q000737:chemistry*; D049408:Luminescent Agents / Q000737:chemistry*; D008958:Models, Molecular; D015394:Molecular Structure; D009942:Organometallic Compounds / Q000737:chemistry*; D013053:Spectrophotometry
chemical_list: D049408:Luminescent Agents; D009942:Organometallic Compounds; D003300:Copper