Piezoresistive InGaAs/GaAs nanosprings with metal connectors.
This paper presents the fabrication, assembly, and characterization of piezoresistive nanosprings for creating nanoelectromechanical systems. The fabrication process is based on conventional microfabrication techniques to create a planar pattern in a 27nm thick, n-type InGaAs/GaAs bilayer that self-forms into three-dimensional structures during a wet etch release. As the nanosprings have lower doped thin and flexible layers, small metal pads have been attached to both sides for achieving stable ohmic contact with electrodes. Nanorobotic manipulation is applied to assemble the nanosprings between electrodes using electron-beam-induced deposition inside a scanning electron microscope, and the bridged nanosprings were then characterized for electromechanical properties. With their strong piezoresistive response, low stiffness, large-displacement capability, and excellent fatigue resistance, they are well-suited to function as sensing elements in high-resolution, large-range electromechanical sensors.
Hwang
Gilgueng
G
Institute of Industrial Science, The University of Tokyo, Tokyo, Japan. hwangkk@hlab.iis.u-tokyo.ac.jp
Hashimoto
Hideki
H