Templated nanocrystal-based porous TiO(2) films for next-generation electrochemical capacitors.
The advantages in using nanoscale materials for electrochemical energy storage are generally attributed to short diffusion path lengths for both electronic and lithium ion transport. Here, we consider another contribution, namely the charge storage from faradaic processes occurring at the surface, referred to as pseudocapacitive effect. This paper describes the synthesis and pseudocapacitive characteristics of block copolymer templated anatase TiO(2) thin films synthesized using either sol-gel reagents or preformed nanocrystals as building blocks. Both materials are highly crystalline and have large surface areas; however, the structure of the porosity is not identical. The different titania systems are characterized by a combination of small- and wide-angle X-ray diffraction/scattering, combined with SEM imaging and physisorption measurements. Following our previously reported approach, we are able to use the voltammetric sweep rate dependence to determine quantitatively the capacitive contribution to the current response. Considerable enhancement of the electrochemical properties results when the films are both made from nanocrystals and mesoporous. Such materials show high levels of capacitive charge storage and high insertion capacities. By contrast, when mesoscale porosity is created in a material with dense walls (rather than porous walls derived from the aggregation of nanocrystals), insertion capacities comparable to templated nanocrystal films can be achieved, but the capacitance is much lower. The results presented here illustrate the importance of pseudocapacitive behavior that develops in high surface area mesoporous oxide films. Such systems provide a new class of pseudocapacitive materials, which offer increased charge storage without compromising charge storage kinetics.
Brezesinski
Torsten
T
Department of Chemistry and Biochemistry, University of California at Los Angeles, California 90095-1569, USA.
Wang
John
J
Polleux
Julien
J
Dunn
Bruce
B
Tolbert
Sarah H
SH