Performance and photovoltaic response of polymer-doped carbon nanotube p-n diodes.
Two terminal abrupt junction diodes are fabricated from single semiconducting carbon nanotubes with simple photopatterned polymer layers defining air-stable p- and n-regions. These intratube diodes show nearly ideal behavior with relatively low series resistance and no sign of Zener breakdown at room temperature. Spatial doping profiles measured by micro-Raman spectroscopy and selective electrochemical gating of the n-region indicate that diode performance depends strongly on relative doping levels. A short circuit current of 1.4 nA with an open circuit voltage of 205 mV are measured when illuminated to saturation.
Abdula
Daner
D
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
Shim
Moonsub
M
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D011211:Electric Power Supplies; D004563:Electrochemistry / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon; D011108:Polymers