Electro-thermal analysis of nano scale PRAM with U shaped bottom electrode.
In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.
Choi
Hong Kyw
HK
Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.
Jang
Nakwon
N
Park
Young Sam
YS
Yoon
Sung Min
SM
Lee
Seung Yun
SY
Yu
Byoung Gon
BG
Kim
Hong Seung
HS