Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.
We have fabricated single-walled carbon nanotube (SWNT) field effect transistors (FETs) with molybdenum source and drain contacts. Normally, these devices operate only as p-channel transistors, however, after polystyrene latex nanospheres were attached to the nanotubes close to the contacts, they changed to ambipolar operation. This strategy provides a simple method to modify the electrical behavior of unipolar SWNT-FETs by influencing the gate-channel electric field distribution and offset charge, so enabling complementary circuits to be fabricated.
Wei
Di
D
Electrical Engineering Division, Engineering Department, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, U.K.
Zhang
Yan
Y
Yang
Yang
Y
Hasko
David G
DG
Chu
DaPing
D
Teo
Ken B K
KB
Amaratunga
Gehan A J
GA
Milne
William I
WI
D054118:Nanospheres / Q000737:chemistry*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry*; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon; D011137:Polystyrenes; C024075:styrofoam