title: Horizontally-aligned single-walled carbon nanotubes on sapphire.
abstract: Recently, we discovered the horizontally-aligned growth of single-walled carbon nanotubes (SWCNTs) on R- and A-plane sapphire substrates, which we call "atomic arrangement-programmed growth (AAP growth)". This is a unique method because the growth direction of SWCNTs is determined by the crystallographic direction of the sapphire surface. In this paper, we report on the characterization of the aligned SWCNTs by polarized Raman and electron transport measurements, and on the effect of the step/terrace structure formed on sapphire surface. These results may open up a possibility of creating the artificial SWCNT network, which can be applied to high-performance electronics.
authors.affiliation: Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580, Japan.
authors.forename: Hiroki
authors.initials: H
authors.lastname: Ago
authors.forename: Naoki
authors.initials: N
authors.lastname: Ishigami
authors.forename: Kenta
authors.initials: K
authors.lastname: Imamoto
authors.forename: Tomoko
authors.initials: T
authors.lastname: Suzuki
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Ikeda
authors.forename: Masaharu
authors.initials: M
authors.lastname: Tsuji
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Ikuta
authors.forename: Koji
authors.initials: K
authors.lastname: Takahashi
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D037742:Nanotubes, Carbon; D000537:Aluminum Oxide