Nanocapacitive circuit elements.
"Natural" lithography was used to prepare arrays of nanoscale capacitors on silicon. The capacitance was verified by a novel technique based on the interaction of a charged substrate with the electron beam of a scanning electron microscope. The "nanocapacitors" possessed a capacitance of approximately 1 x 10(-16) F and were observed to hold charge for over an hour. Our results indicate that fabricating nanostructures using natural lithography may provide a viable alternative for future nanoelectronic devices.
Zareie
Hadi M
HM
Institute for Nanoscale Technology, University of Technology Sydney, Broadway NSW 2007, Australia. hadi.zareie@uts.edu.au
Morgan
Scott W
SW
Moghaddam
Matthew
M
Maaroof
Abbas I
AI
Cortie
Michael B
MB
Phillips
Matthew R
MR
D003460:Crystallization / Q000379:methods*; D025802:Electric Capacitance; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D013499:Surface Properties
D046911:Macromolecular Substances