title: Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.
abstract: We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-defined memory hysteresis loop induced by the reversible remnant polarization of the ferroelectric films. Large memory windows approximately 4 V, data retention time up to 1 week, and ultralow power consumption (energy per bit) of femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Wangyang
authors.initials: W
authors.lastname: Fu
authors.forename: Zhi
authors.initials: Z
authors.lastname: Xu
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai
authors.forename: Changzhi
authors.initials: C
authors.lastname: Gu
authors.forename: Enge
authors.initials: E
authors.lastname: Wang