Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation.
A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement. Drop-port responses from weakly coupled ring resonators demonstrate propagation losses below 0.36 dB/cm for TE modes. This technique is also combined with "magic width" designs mitigating severe lateral radiation leakage for TM modes to achieve propagation loss values of 0.94 dB/cm. We discuss the fabrication process utilized to form these low-loss waveguides and implications for sensor devices in particular.
Pafchek
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R
Center for Optical Technologies, Lehigh University, Bethlehem, Pennsylvania 18015, USA.
Tummidi
R
R
Li
J
J
Webster
M A
MA
Chen
E
E
Koch
T L
TL