The scaling of the effective band gaps in indium-arsenide quantum dots and wires.
Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.
Wang
Fudong
F
Department of Chemistry, Washington University, Saint Louis, Missouri 63130-4899, USA.
Yu
Heng
H
Jeong
Sohee
S
Pietryga
Jeffrey M
JM
Hollingsworth
Jennifer A
JA
Gibbons
Patrick C
PC
Buhro
William E
WE
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D045663:Quantum Dots; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; C076773:indium arsenide