Electrical characterization of N- and P-doped hole and electron only organic devices.
We have fabricated a series of hole only devices with tungsten oxide (WO3) and molybdenum oxide (MoO3) n-doping materials in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transport layer, and electron only devices with CsF and Cs2CO3 p-doping materials in 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transport layer. Current-voltage characteristics and conductivity of these devices are investigated. The optimal conditions for ohmic injection and low resistance properties, and process margins of each dopant are reported in this paper.
Park
Tae Jin
TJ
Advanced Display Research Center and Department of Information Display, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea.
Kim
Sun Young
SY
Jeon
Woo Sik
WS
Park
Jung Joo
JJ
Pode
Ramchandra
R
Jang
Jin
J
Kwon
Jang Hyuk
JH