title: Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.
abstract: Large-quality, well-crystallized growth of ZnO nanowires was done via non-catalytic thermal evaporation process on silicon substrate only by using metallic zinc powder and oxygen as source materials for zinc and oxygen, respectively. The electrical properties of the as-grown ZnO nanowires were examined by fabricating a single nanowire based FETs which were fabricated via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. ZnO FETs electrical properties were characterized by I(DS)-V(DS) and I(DS)-V(GS) measurement. The fabricated single ZnO nanowire based FETs by back- and top-gate approaches exhibited field effect mobilities of approximately 4.25 and approximately 12.76 cm2/Vs, respectively. Moreover, the carrier concentrations for the fabricated back- and top-gate FETs were approximately 1.6 x 10(17) and approximately 1.37 x 10(18) cm(-3), respectively. From our studies it was observed that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.
authors.affiliation: School of Semiconductor and Chemical Engineering, BK21 Center for Future Energy Materials and Devices, and Nanomaterials Processing Research Center, Chonbuk National University, Jeonju, 561-756, South Korea.
authors.forename: Y K
authors.initials: YK
authors.lastname: Park
authors.forename: Ahmad
authors.initials: A
authors.lastname: Umar
authors.forename: S H
authors.initials: SH
authors.lastname: Kim
authors.forename: J H
authors.initials: JH
authors.lastname: Kim
authors.forename: E W
authors.initials: EW
authors.lastname: Lee
authors.forename: M
authors.initials: M
authors.lastname: Vaseem
authors.forename: Y B
authors.initials: YB
authors.lastname: Hahn
mesh_terms: D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D046911:Macromolecular Substances; D015034:Zinc Oxide