High-density crossbar arrays based on a Si memristive system.
We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also facilitates further studies on hybrid nano/CMOS systems.
Jo
Sung Hyun
SH
Department of Electrical Engineering and Computer Science, the University of Michigan, Ann Arbor, Michigan 48109, USA.
Kim
Kuk-Hwan
KH
Lu
Wei
W
D004566:Electrodes; D046228:Microarray Analysis / Q000379:methods*; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry*
D012825:Silicon