title: High-density crossbar arrays based on a Si memristive system.
abstract: We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also facilitates further studies on hybrid nano/CMOS systems.
authors.affiliation: Department of Electrical Engineering and Computer Science, the University of Michigan, Ann Arbor, Michigan 48109, USA.
authors.forename: Sung Hyun
authors.initials: SH
authors.lastname: Jo
authors.forename: Kuk-Hwan
authors.initials: KH
authors.lastname: Kim
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
mesh_terms: D004566:Electrodes; D046228:Microarray Analysis / Q000379:methods*; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon