title: Simulation study of the scaling behavior of top-gated carbon nanotube field effect transistors.
abstract: Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made.
authors.affiliation: School of Engineering, Information and Communications University, Daejeon 305-732, Republic of Korea.
authors.forename: Mincheol
authors.initials: M
authors.lastname: Shin
authors.forename: Jaehyun
authors.initials: J
authors.lastname: Lee
authors.forename: Chiyui
authors.initials: C
authors.lastname: Ahn