title: Electro-thermal analysis of nano scale PRAM with U shaped bottom electrode.
abstract: In this paper, we have investigated the phase change memory device with U-shaped bottom electrode using three-dimensional finite element analysis tool. From the simulation, the reset current of PRAM with U-shaped bottom electrode is greatly reduced, compared with the conventional device. And the experimental result clearly shows that the PRAM with U-shaped bottom electrode has 35% smaller RESET current, compared with the conventional PRAM device.
authors.affiliation: Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.
authors.forename: Hong Kyw
authors.initials: HK
authors.lastname: Choi
authors.forename: Nakwon
authors.initials: N
authors.lastname: Jang
authors.forename: Young Sam
authors.initials: YS
authors.lastname: Park
authors.forename: Sung Min
authors.initials: SM
authors.lastname: Yoon
authors.forename: Seung Yun
authors.initials: SY
authors.lastname: Lee
authors.forename: Byoung Gon
authors.initials: BG
authors.lastname: Yu
authors.forename: Hong Seung
authors.initials: HS
authors.lastname: Kim