title: High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors.
abstract: Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN(2)] were fabricated by lamination of the semiconductor crystal on Si-SiO(2)/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V(-1) s(-1), respectively, I(on):I(off) > 10(3), and near-zero threshold voltage.
authors.affiliation: Kavli Institue of Nanoscience, Delft University, Lorentzweg 1, 2628CJ, Delft, The Netherlands. A.S.Molinari@tudelft.nl
authors.forename: Anna S
authors.initials: AS
authors.lastname: Molinari
authors.forename: Helena
authors.initials: H
authors.lastname: Alves
authors.forename: Zhihua
authors.initials: Z
authors.lastname: Chen
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Alberto F
authors.initials: AF
authors.lastname: Morpurgo