Scanning probe oxidation lithography on Ta thin films.
A Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaOx layer and Ta film were obtained as 5.76 x 10(8) and 1.4 x 10(-5) Ohm-cm, respectively.
Okur
Salih
S
Department of Physics, Izmir Institute of Technology, Urla, 35430, Izmir, Turkey.
Büjükköse
Serkan
S
Tari
Suleyman
S
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D020527:Microscopy, Scanning Probe / Q000379:methods*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010084:Oxidation-Reduction; D010316:Particle Size; D013499:Surface Properties; D013635:Tantalum / Q000737:chemistry*
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D013635:Tantalum