Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T(g) for hole injection and hole transporting materials.
We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T(g) in the range of 175-202 degrees C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.
Kim
Soo-Kang
SK
Department of Chemistry, The Catholic University of Korea, Bucheon 420-743, Republic of Korea.
Lee
Ji-Hoon
JH
Park
Jong-Wook
JW