Ultra-low output impedance RF power amplifier for parallel excitation.
Inductive coupling between coil elements of a transmit array is one of the key challenges faced by parallel RF transmission. An ultra-low output impedance RF power amplifier (PA) concept was introduced to address this challenge. In an example implementation, an output-matching network was designed to transform the drain-source impedance of the metallic oxide semiconductor field effect transistor (MOSFET) into a very low value for suppressing interelement coupling effect, and meanwhile, to match the input impedance of the coil to the optimum load of the MOSFET for maximizing the available output power. Two prototype amplifiers with 500-W output rating were developed accordingly, and were further evaluated with a transmit array in phantom experiments. Compared to the conventional 50-Omega sources, the new approach exhibited considerable effectiveness suppressing the effects of interelement coupling. The experiments further indicated that the isolation performance was comparable to that achieved by optimized overlap decoupling. The new approach, benefiting from a distinctive current-source characteristic, also exhibited a superior robustness against load variation. Feasibility of the new approach in high-field MR was demonstrated on a 3T clinical scanner.
Chu
Xu
X
Low Power Electronics Lab, GE Global Research Center, Shanghai, China. xu.chu@ge.com
Yang
Xing
X
Liu
Yunfeng
Y
Sabate
Juan
J
Zhu
Yudong
Y
D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007089:Image Enhancement / Q000295:instrumentation*; D008279:Magnetic Resonance Imaging / Q000295:instrumentation*; D008280:Magnetics / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers