Photocatalysis using GaN nanowires.
The photocatalytic activity of GaN nanowires was investigated for the use of GaN nanowires as photocatalysts in harsh environments. GaN nanowires with diameters of 20-50 nm and lengths of 4-6 microm were prepared by Ni catalyst-assisted metal-organic chemical vapor deposition. Comparisons of GaN nanowires with GaN submicron dot arrays and thin films showed that GaN nanowires exhibit much better photocatalytic activity, resulting from a high surface-to-volume ratio. In addition, GaN nanowires exhibited good ability to photodegrade organic dye at various pHs, even under strong acidity and alkalinity. The photocatalytic activity of GaN nanowires was also compared with that of ZnO and TiO(2) nanowires.
Jung
Hye Seong
HS
National CRI Center for Semiconductor Nanorods, Department of Materials Science and Engineering and School of Environmental Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784, Korea.
Hong
Young Joon
YJ
Li
Yirui
Y
Cho
Jeonghui
J
Kim
Yong-Jin
YJ
Yi
Gyu-Chul
GC
D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D010777:Photochemistry / Q000379:methods*; D045663:Quantum Dots; D013499:Surface Properties
D046911:Macromolecular Substances