title: Electrical characterization of N- and P-doped hole and electron only organic devices.
abstract: We have fabricated a series of hole only devices with tungsten oxide (WO3) and molybdenum oxide (MoO3) n-doping materials in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transport layer, and electron only devices with CsF and Cs2CO3 p-doping materials in 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transport layer. Current-voltage characteristics and conductivity of these devices are investigated. The optimal conditions for ohmic injection and low resistance properties, and process margins of each dopant are reported in this paper.
authors.affiliation: Advanced Display Research Center and Department of Information Display, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea.
authors.forename: Tae Jin
authors.initials: TJ
authors.lastname: Park
authors.forename: Sun Young
authors.initials: SY
authors.lastname: Kim
authors.forename: Woo Sik
authors.initials: WS
authors.lastname: Jeon
authors.forename: Jung Joo
authors.initials: JJ
authors.lastname: Park
authors.forename: Ramchandra
authors.initials: R
authors.lastname: Pode
authors.forename: Jin
authors.initials: J
authors.lastname: Jang
authors.forename: Jang Hyuk
authors.initials: JH
authors.lastname: Kwon