title: Phenyl-naphthyl amine effect of new phenothiazine derivatives with high T(g) for hole injection and hole transporting materials.
abstract: We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T(g) in the range of 175-202 degrees C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.
authors.affiliation: Department of Chemistry, The Catholic University of Korea, Bucheon 420-743, Republic of Korea.
authors.forename: Soo-Kang
authors.initials: SK
authors.lastname: Kim
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Lee
authors.forename: Jong-Wook
authors.initials: JW
authors.lastname: Park