title: 2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application.
abstract: Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.
authors.affiliation: dagger Departments of Chemistry and Physics, double dagger Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA. ppz@nano.psu.edu
authors.forename: Pengpeng
authors.initials: P
authors.lastname: Zhang
authors.forename: Theresa S
authors.initials: TS
authors.lastname: Mayer
authors.forename: Thomas N
authors.initials: TN
authors.lastname: Jackson
mesh_terms: D015374:Biosensing Techniques; D008670:Metals / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D012958:Societies, Scientific; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D010087:Oxides