title: Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
abstract: Ultralow density (approximately 10(6)/cm(2)) of twin InAs quantum dot (QD) hybrid structure was grown by a droplet epitaxy technique. The photoluminescence (PL) from ensemble and individual twin InAs QD structures showed a bimodal behavior and an energy transfer between the well-separated (approximately 190 nm) twin QDs, which was supposedly due to the special wetting ring that built the channel for exciton transfer. This research demonstrates a novel approach to fabricate lateral InAs QD pairs as the candidate for a laterally coupled QD molecule.
authors.affiliation: Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.
authors.forename: Bao-Lai
authors.initials: BL
authors.lastname: Liang
authors.forename: Zhi-Ming
authors.initials: ZM
authors.lastname: Wang
authors.forename: Xiao-Yong
authors.initials: XY
authors.lastname: Wang
authors.forename: Ji-Hoon
authors.initials: JH
authors.lastname: Lee
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.forename: Chih-Kang
authors.initials: CK
authors.lastname: Shih
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004735:Energy Transfer; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D018625:Microscopy, Atomic Force; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D010777:Photochemistry; D045663:Quantum Dots; D013696:Temperature; D017155:Wettability
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide