title: Site-controlled InGaAs quantum dots with tunable emission energy.
abstract: Semiconductor quantum-dot (QD) systems offering perfect site control and tunable emission energy are essential for numerous nanophotonic device applications involving spatial and spectral matching of dots with optical cavities. Herein, the properties of ordered InGaAs/GaAs QDs grown by organometallic chemical vapor deposition on substrates patterned with pyramidal recesses are reported. The seeded growth of a single QD inside each pyramid results in near-perfect (<10 nm) control of the QD position. Moreover, efficient and uniform photoluminescence (inhomogeneous broadening <10 meV) is observed from ordered arrays of such dots. The QD emission energy can be finely tuned by varying 1) the pyramid size and 2) its position within specific patterns. This tunability is brought about by the patterning of both the chemical properties and the surface curvature features of the substrate, which allows local control of the adatom fluxes that determine the QD thickness and composition.
authors.affiliation: Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. marco.felici@epfl.ch
authors.forename: Marco
authors.initials: M
authors.lastname: Felici
authors.forename: Pascal
authors.initials: P
authors.lastname: Gallo
authors.forename: Arun
authors.initials: A
authors.lastname: Mohan
authors.forename: Benjamin
authors.initials: B
authors.lastname: Dwir
authors.forename: Alok
authors.initials: A
authors.lastname: Rudra
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
mesh_terms: D001151:Arsenic / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D049449:Luminescence; D049329:Nanostructures / Q000737:chemistry*; D045663:Quantum Dots; D013499:Surface Properties
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; D001151:Arsenic