Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires.
We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.
Oka
Keisuke
K
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan.
Yanagida
Takeshi
T
Nagashima
Kazuki
K
Tanaka
Hidekazu
H
Kawai
Tomoji
T