title: Nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires.
abstract: We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscale mechanisms in NiO resistive memory switching but also next-generation nanoscale nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan.
authors.forename: Keisuke
authors.initials: K
authors.lastname: Oka
authors.forename: Takeshi
authors.initials: T
authors.lastname: Yanagida
authors.forename: Kazuki
authors.initials: K
authors.lastname: Nagashima
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Tanaka
authors.forename: Tomoji
authors.initials: T
authors.lastname: Kawai