Fabrication and characterization of Teflon-bonded periodic GaAs structures for THz generation.
A novel technique for low-temperature bonding of GaAs wafers using an interboundary Teflon film is developed. A fabricated stack of ten 25x25 mm2 diced wafers demonstrated 75% transmission of a 10 microm CO2 laser beam. Modeling of these Teflon-bonded (TB) structures as sequences of Fabry-Perot etalons gives a good agreement with transmission measurements. A 20x20 mm2 quasi-phase matched structure of five wafers pumped by CO2 laser lines generated the narrow-band THz radiation at a wavelength of 343 microm via a difference frequency mixing process.
Trubnick
Sarah E
SE
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095, USA.
Tochitsky
Sergei Ya
SY
Joshi
Chandrashekhar
C
D001152:Arsenicals / Q000737:chemistry*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D054020:Lasers, Gas; D008872:Microwaves; D011138:Polytetrafluoroethylene / Q000737:chemistry*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity
D001152:Arsenicals; C043055:gallium arsenide; D011138:Polytetrafluoroethylene; D005708:Gallium