title: Large longitudinal electric fields (Ez) in silicon nanowire waveguides.
abstract: We demonstrate the presence of strong longitudinal electric fields (E(z)) in silicon nanowire waveguides through numerical computation. These waveguide fields can be engineered through choice of waveguide geometry to exhibit amplitudes as high as 97% that of the dominant transverse field component. We show even larger longitudinal fields created in free space by a terminated waveguide can become the dominant electric field component, and demonstrate E(z) has a large effect on waveguide nonlinearity. We discuss the possibility of controlling the strength and symmetry of E(z) using a dual waveguide design, and show that the resulting longitudinal field is sharply peaked beyond the diffraction limit.
authors.affiliation: Department of Electrical Engineering, Columbia University, 1300 S. W. Mudd Building, 500 W. 120th Street, New York, New York 10027, USA. jbd2112@columbia.edu
authors.forename: Jeffrey B
authors.initials: JB
authors.lastname: Driscoll
authors.forename: Xiaoping
authors.initials: X
authors.lastname: Liu
authors.forename: Saam
authors.initials: S
authors.lastname: Yasseri
authors.forename: Iwei
authors.initials: I
authors.lastname: Hsieh
authors.forename: Jerry I
authors.initials: JI
authors.lastname: Dadap
authors.forename: Richard M
authors.initials: RM
authors.lastname: Osgood
mesh_terms: D003198:Computer Simulation; D004574:Electromagnetic Fields; D008027:Light; D008956:Models, Chemical; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon