Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior.
The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical model that exhibited the properties of such a device. Here we provide a more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary conditions. We simulate the dynamics of a two-terminal memristive device based on a semiconductor thin film with mobile dopants that are partially compensated by a small amount of immobile acceptors. We examine the mobile ion distributions, zero-bias potentials, and current-voltage characteristics of the model for both steady-state bias conditions and for dynamical switching to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.
Strukov
Dmitri B
DB
Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA. dmitri.strukov@hp.com
Borghetti
Julien L
JL
Williams
R Stanley
RS
D003198:Computer Simulation; D017076:Computer-Aided Design; D017097:Electric Impedance; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D008962:Models, Theoretical; D012666:Semiconductors
D008567:Membranes, Artificial