Method for suppression of stacking faults in Wurtzite III-V nanowires.
The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.
Shtrikman
Hadas
H
Braun Center for Submicron Research, Electron Microscopy Unit, Weizmann Institute, Rehovot, Israel. Shtrikman@weizmann.ac.il
Popovitz-Biro
Ronit
R
Kretinin
Andrey
A
Houben
Lothar
L
Heiblum
Moty
M
Bukała
Małgorzata
M
Galicka
Marta
M
Buczko
Ryszard
R
Kacman
Perła
P