title: Electric-field control of a hydrogenic donor's spin in a semiconductor.
abstract: An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
authors.affiliation: Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA.
authors.forename: A
authors.initials: A
authors.lastname: De
authors.forename: Craig E
authors.initials: CE
authors.lastname: Pryor
authors.forename: Michael E
authors.initials: ME
authors.lastname: Flatté