Controlled coupling and occupation of silicon atomic quantum dots at room temperature.
It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by less, similar2 nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel coupling strength among dots. Electron occupation of DB assemblies can be controlled at room temperature. Electrostatic control over charge distribution within assemblies is demonstrated.
Haider
M Baseer
MB
National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta T6G 2M9, Canada.
Pitters
Jason L
JL
DiLabio
Gino A
GA
Livadaru
Lucian
L
Mutus
Josh Y
JY
Wolkow
Robert A
RA