title: Method for suppression of stacking faults in Wurtzite III-V nanowires.
abstract: The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.
authors.affiliation: Braun Center for Submicron Research, Electron Microscopy Unit, Weizmann Institute, Rehovot, Israel. Shtrikman@weizmann.ac.il
authors.forename: Hadas
authors.initials: H
authors.lastname: Shtrikman
authors.forename: Ronit
authors.initials: R
authors.lastname: Popovitz-Biro
authors.forename: Andrey
authors.initials: A
authors.lastname: Kretinin
authors.forename: Lothar
authors.initials: L
authors.lastname: Houben
authors.forename: Moty
authors.initials: M
authors.lastname: Heiblum
authors.forename: Małgorzata
authors.initials: M
authors.lastname: Bukała
authors.forename: Marta
authors.initials: M
authors.lastname: Galicka
authors.forename: Ryszard
authors.initials: R
authors.lastname: Buczko
authors.forename: Perła
authors.initials: P
authors.lastname: Kacman