Ultrafast carrier relaxation in Si studied by time-resolved two-photon photoemission spectroscopy: intravalley scattering and energy relaxation of hot electrons.
The dynamical relaxations of photogenerated hot carriers in the X valley of Si have been studied using time-resolved two-photon photoemission spectroscopy. Intravalley scattering is completed within 100 fs to form a quasiequilibrated electron distribution near the conduction-band minimum, while maintaining about half the excess energy given to hot electrons. The energy relaxation follows the scattering with a 240-fs time constant that is independent of the excess energy.
Ichibayashi
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The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Tanimura
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