Evidence for Klein tunneling in graphene p-n junctions.
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.
Stander
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N
Department of Physics, Stanford University, Stanford, California 94305, USA.
Huard
B
B
Goldhaber-Gordon
D
D