title: Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates.
abstract: We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.
authors.affiliation: CEA Grenoble, INAC/SP2M, 17 rue des martyrs, F-38054 Grenoble, France.
authors.forename: T U
authors.initials: TU
authors.lastname: Schülli
authors.forename: G
authors.initials: G
authors.lastname: Vastola
authors.forename: M-I
authors.initials: MI
authors.lastname: Richard
authors.forename: A
authors.initials: A
authors.lastname: Malachias
authors.forename: G
authors.initials: G
authors.lastname: Renaud
authors.forename: F
authors.initials: F
authors.lastname: Uhlík
authors.forename: F
authors.initials: F
authors.lastname: Montalenti
authors.forename: G
authors.initials: G
authors.lastname: Chen
authors.forename: L
authors.initials: L
authors.lastname: Miglio
authors.forename: F
authors.initials: F
authors.lastname: Schäffler
authors.forename: G
authors.initials: G
authors.lastname: Bauer