title: Reversible metal-semiconductor transition of ssDNA-decorated single-walled carbon nanotubes.
abstract: A field effect transistor (FET) measurement of a single-walled carbon nanotube (SWNT) shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the ssDNA-SWNT hybrid. Raman spectroscopy confirms the same change in electrical behaviors. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.
authors.affiliation: Department of Physics and Astronomy, FPRD, Institute of Advanced Machinery and Design, School of Mechanical and Aerospace Engineering, Seoul National University, Seoul, Korea.
authors.forename: Misun
authors.initials: M
authors.lastname: Cha
authors.forename: Seungwon
authors.initials: S
authors.lastname: Jung
authors.forename: Moon-Hyun
authors.initials: MH
authors.lastname: Cha
authors.forename: Gunn
authors.initials: G
authors.lastname: Kim
authors.forename: Jisoon
authors.initials: J
authors.lastname: Ihm
authors.forename: Junghoon
authors.initials: J
authors.lastname: Lee
mesh_terms: D004277:DNA, Single-Stranded / Q000737:chemistry*; D004735:Energy Transfer; D005453:Fluorescence; D008670:Metals / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D037742:Nanotubes, Carbon; D012666:Semiconductors; D013059:Spectrum Analysis, Raman
chemical_list: D004277:DNA, Single-Stranded; D008670:Metals; D037742:Nanotubes, Carbon