title: The interface state assisted charge transport at the MoO(3)/metal interface.
abstract: The interface formation between a metal and MoO(3) was examined. We carried out in situ ultraviolet and x-ray photoemission spectroscopy with step-by-step deposition of MoO(3) on clean Au and Al substrates. The MoO(3) induces huge interface dipoles, which significantly increase the work functions of Au and Al surfaces. This is the main origin of the carrier injection improvement in organic devices. In addition, interface states are observed at the initial stages of MoO(3) deposition on both Au and Al. The interface states are very close to the Fermi level, assisting the charge transport from the metal electrode. This explains that thick MoO(3) layers provide good charge transport when adopted in organic devices.
authors.affiliation: Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon, South Korea. yeonjin@kriss.re.kr
authors.forename: Yeonjin
authors.initials: Y
authors.lastname: Yi
authors.forename: Pyung Eun
authors.initials: PE
authors.lastname: Jeon
authors.forename: Hyunbok
authors.initials: H
authors.lastname: Lee
authors.forename: Kyul
authors.initials: K
authors.lastname: Han
authors.forename: Hyun Sung
authors.initials: HS
authors.lastname: Kim
authors.forename: Kwangho
authors.initials: K
authors.lastname: Jeong
authors.forename: Sang Wan
authors.initials: SW
authors.lastname: Cho