title: Axial p-n junctions realized in silicon nanowires by ion implantation.
abstract: The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.
authors.affiliation: Laboratory for Mechanics of Materials and Nanostructures, Empa Materials Science and Technology, Thun, Switzerland.
authors.forename: S
authors.initials: S
authors.lastname: Hoffmann
authors.forename: J
authors.initials: J
authors.lastname: Bauer
authors.forename: C
authors.initials: C
authors.lastname: Ronning
authors.forename: Th
authors.initials: T
authors.lastname: Stelzner
authors.forename: J
authors.initials: J
authors.lastname: Michler
authors.forename: C
authors.initials: C
authors.lastname: Ballif
authors.forename: V
authors.initials: V
authors.lastname: Sivakov
authors.forename: S H
authors.initials: SH
authors.lastname: Christiansen