Axial p-n junctions realized in silicon nanowires by ion implantation.
The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.
Hoffmann
S
S
Laboratory for Mechanics of Materials and Nanostructures, Empa Materials Science and Technology, Thun, Switzerland.
Bauer
J
J
Ronning
C
C
Stelzner
Th
T
Michler
J
J
Ballif
C
C
Sivakov
V
V
Christiansen
S H
SH