title: Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.
abstract: We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr(0.3)Ti(0.7))O(3) (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO(2) gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V(g) curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10(3)) on/off ratio at zero gate voltage. Our results give a proof-of-principle demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore.
authors.forename: L
authors.initials: L
authors.lastname: Liao
authors.forename: H J
authors.initials: HJ
authors.lastname: Fan
authors.forename: B
authors.initials: B
authors.lastname: Yan
authors.forename: Z
authors.initials: Z
authors.lastname: Zhang
authors.forename: L L
authors.initials: LL
authors.lastname: Chen
authors.forename: B S
authors.initials: BS
authors.lastname: Li
authors.forename: G Z
authors.initials: GZ
authors.lastname: Xing
authors.forename: Z X
authors.initials: ZX
authors.lastname: Shen
authors.forename: T
authors.initials: T
authors.lastname: Wu
authors.forename: X W
authors.initials: XW
authors.lastname: Sun
authors.forename: J
authors.initials: J
authors.lastname: Wang
authors.forename: T
authors.initials: T
authors.lastname: Yu