title: Highly efficient vertical growth of wall-number-selected, N-doped carbon nanotube arrays.
abstract: We demonstrate a straightforward approach for rapid growth of wall-number selected, N-doped CNT arrays. Highly uniform nanopatterned iron catalyst arrays were prepared by tilted deposition through block copolymer nanotemplates. PECVD growth of CNTs from the nanopatterned catalysts in an NH(3) environment generated vertical N-doped CNTs with a fine-tunability of their carbon wall numbers. The optimized growth conditions produced 52 microm long N-doped CNTs within 1 min. Owing to N-doping, the wall-number selected CNTs including DWNTs and TWNTs demonstrated enhanced electro-conductivity and chemical functionality. This remarkably fast growth of highly uniform N-doped CNTs, whose material properties and chemical functionalizability are reinforced by N-doping, offers a new area of large-scale nanofabrication, potentially useful for diverse nanodevices.
authors.affiliation: Department of Materials Science and Engineering, KAIST 373-1, Yuseong-gu, Daejeon, Republic of Korea.
authors.forename: Duck Hyun
authors.initials: DH
authors.lastname: Lee
authors.forename: Won Jong
authors.initials: WJ
authors.lastname: Lee
authors.forename: Sang Ouk
authors.initials: SO
authors.lastname: Kim