title: Solution-processed, high-performance n-channel organic microwire transistors.
abstract: The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
authors.affiliation: Departments of Chemical Engineering and Chemistry, Stanford University, Stanford, CA 94305, USA.
authors.forename: Joon Hak
authors.initials: JH
authors.lastname: Oh
authors.forename: Hang Woo
authors.initials: HW
authors.lastname: Lee
authors.forename: Stefan
authors.initials: S
authors.lastname: Mannsfeld
authors.forename: Randall M
authors.initials: RM
authors.lastname: Stoltenberg
authors.forename: Eric
authors.initials: E
authors.lastname: Jung
authors.forename: Yong Wan
authors.initials: YW
authors.lastname: Jin
authors.forename: Jong Min
authors.initials: JM
authors.lastname: Kim
authors.forename: Ji-Beom
authors.initials: JB
authors.lastname: Yoo
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao