title: Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.
abstract: Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.
authors.affiliation: Max Planck Institute of Microstructure Physics, Halle, Germany.
authors.forename: Tomohiro
authors.initials: T
authors.lastname: Shimizu
authors.forename: Zhang
authors.initials: Z
authors.lastname: Zhang
authors.forename: Shoso
authors.initials: S
authors.lastname: Shingubara
authors.forename: Stephan
authors.initials: S
authors.lastname: Senz
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele