title: High-quality Graphenes via a facile quenching method for field-effect transistors.
abstract: Single- and few-layer graphene sheets with sizes up to 0.1 mm were fabricated by simply quenching hot graphite in an ammonium hydrogen carbonate aqueous solution. The identity and thickness of graphene sheets were characterized with transmission electron microscopy, atomic force microscopy, and Raman spectroscopy. In addition to its simplicity and scalability, the present synthesis can produce graphene sheets with excellent qualities in terms of sizes, purity, and crystal quality. The as-produced graphene sheets can be easily transferred to solid substrates for further processing. Field-effect transistors based on individual graphenes were fabricated and shown to have high ambipolar carrier mobilities.
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, Center of Super-Diamond and Advanced Films, Hong Kong SAR, China.
authors.forename: Y B
authors.initials: YB
authors.lastname: Tang
authors.forename: C S
authors.initials: CS
authors.lastname: Lee
authors.forename: Z H
authors.initials: ZH
authors.lastname: Chen
authors.forename: G D
authors.initials: GD
authors.lastname: Yuan
authors.forename: Z H
authors.initials: ZH
authors.lastname: Kang
authors.forename: L B
authors.initials: LB
authors.lastname: Luo
authors.forename: H S
authors.initials: HS
authors.lastname: Song
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: Z B
authors.initials: ZB
authors.lastname: He
authors.forename: W J
authors.initials: WJ
authors.lastname: Zhang
authors.forename: I
authors.initials: I
authors.lastname: Bello
authors.forename: S T
authors.initials: ST
authors.lastname: Lee