title: Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen.
abstract: Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. nguisinger@anl.gov
authors.forename: Nathan P
authors.initials: NP
authors.lastname: Guisinger
authors.forename: Gregory M
authors.initials: GM
authors.lastname: Rutter
authors.forename: Jason N
authors.initials: JN
authors.lastname: Crain
authors.forename: Phillip N
authors.initials: PN
authors.lastname: First
authors.forename: Joseph A
authors.initials: JA
authors.lastname: Stroscio