Charge transport in interpenetrating networks of semiconducting and metallic carbon nanotubes.
Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN-FETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.
Topinka
Mark A
MA
Materials Science and Engineering Department, Stanford University, Stanford, California, USA.
Rowell
Michael W
MW
Goldhaber-Gordon
David
D
McGehee
Michael D
MD
Hecht
David S
DS
Gruner
George
G