title: Charge transport in interpenetrating networks of semiconducting and metallic carbon nanotubes.
abstract: Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN-FETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.
authors.affiliation: Materials Science and Engineering Department, Stanford University, Stanford, California, USA.
authors.forename: Mark A
authors.initials: MA
authors.lastname: Topinka
authors.forename: Michael W
authors.initials: MW
authors.lastname: Rowell
authors.forename: David
authors.initials: D
authors.lastname: Goldhaber-Gordon
authors.forename: Michael D
authors.initials: MD
authors.lastname: McGehee
authors.forename: David S
authors.initials: DS
authors.lastname: Hecht
authors.forename: George
authors.initials: G
authors.lastname: Gruner