Electroluminescence from ZnO/Si-nanotips light-emitting diodes.
A new and general approach to achieving efficient electrically driven light emission from a Si-based nano p-n junction array is introduced. A wafer-scale array of p-type silicon nanotips were formed by a single-step self-masked dry etching process, which is compatible with current semiconductor technologies. On top of the silicon nanotip array, a layer of n-type ZnO film was grown by pulsed laser deposition. Both the narrow line width of 10 nm in cathodoluminescence spectra and the appearance of multiphonon Raman spectra up to the fourth order indicate the excellent quality of the ZnO film. The turn-on voltage of our ZnO/Si nanotip array is found to be approximately 2.4 V, which is 2 times smaller than its thin film counterpart. Moreover, electroluminescence (EL) from our ZnO/Si nanotips array light-emitting diode (LED) has been demonstrated. Our results could open up new possibilities to integrate silicon-based optoelectronic devices, such as highly efficient LEDs, with standard Si ultralarge-scale integrated technology.
Hsieh
Ya-Ping
YP
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Chen
Hsin-Yi
HY
Lin
Ming-Zhang
MZ
Shiu
Shu-Chia
SC
Hofmann
Mario
M
Chern
Ming-Yau
MY
Jia
Xiaoting
X
Yang
Ying-Jay
YJ
Chang
Hsiu-Ju
HJ
Huang
Hsuan-Ming
HM
Tseng
Shao-Chin
SC
Chen
Li-Chyong
LC
Chen
Kuei-Hsien
KH
Lin
Ching-Fuh
CF
Liang
Chi-Te
CT
Chen
Yang-Fang
YF