title: Deposited silicon high-speed integrated electro-optic modulator.
abstract: We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p(+)n(-)n(+) diode to achieve optical modulation using the free carrier plasma dispersion effect. Active optical devices in a deposited microelectronic material can break the dependence on the traditional single layer silicon-on-insulator platform and help lead to monolithic large-scale integration of photonic networks on a microprocessor chip.
authors.affiliation: School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
authors.forename: Kyle
authors.initials: K
authors.lastname: Preston
authors.forename: Sasikanth
authors.initials: S
authors.lastname: Manipatruni
authors.forename: Alexander
authors.initials: A
authors.lastname: Gondarenko
authors.forename: Carl B
authors.initials: CB
authors.lastname: Poitras
authors.forename: Michal
authors.initials: M
authors.lastname: Lipson