title: Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.
abstract: SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.
authors.affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108, USA. geis@ll.mit.edu
authors.forename: M W
authors.initials: MW
authors.lastname: Geis
authors.forename: S J
authors.initials: SJ
authors.lastname: Spector
authors.forename: M E
authors.initials: ME
authors.lastname: Grein
authors.forename: J U
authors.initials: JU
authors.lastname: Yoon
authors.forename: D M
authors.initials: DM
authors.lastname: Lennon
authors.forename: T M
authors.initials: TM
authors.lastname: Lyszczarz