title: Bi-doped BaF2 crystal for broadband near-infrared light source.
abstract: Bi-doped BaF(2) crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF(2) crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi(2+) or Bi(+) centers adjacent to F vacancy defects are the origins of the observed NIR emissions.
authors.affiliation: State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China.
authors.forename: Jian
authors.initials: J
authors.lastname: Ruan
authors.forename: Liangbi
authors.initials: L
authors.lastname: Su
authors.forename: Jianrong
authors.initials: J
authors.lastname: Qiu
authors.forename: Danping
authors.initials: D
authors.lastname: Chen
authors.forename: Jun
authors.initials: J
authors.lastname: Xu