Silicon doping system at the research reactor FRM II.
Silicon doping has being carried out at FRM II since 2 years. During the commissioning of our new reactor, a simple test rig was used to determine the neutron flux profile at the irradiation position and optimise a nickel absorber liner, which is equipped at the irradiation position for vertical smoothing of the neutron flux profile. MCNP-code was used during the design of the liner. The final automatic doping system is designed to allow the irradiation of cylindrical silicon single crystals 500mm high and up to 200mm in diameter. Silicon ingots are additionally rotated continuously about their own cylinder axis during irradiation. The neutron flux density is measured online by using self-powered-neutron (SPN) detectors. The necessary doping homogeneity of +/-5% is achieved. The doping procedure and doping quality of ingots with high target resistivity are also discussed.
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Forschungsneutronenquelle Heinz Maier-Leibnitz (FRM II), Technische Universität München, Lichtenbergstrasse 1, D-85747 Garching, Germany. xiaosong.li@frm2.tum.de
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Neuhaus
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