Application of neutron transmutation doping method to initially p-type silicon material.
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
Kim
Myong-Seop
MS
Korea Atomic Energy Research Institute, 1045 Daedeok-daero, Yuseong, Daejeon 305-353, Republic of Korea. mskim@kaeri.re.kr
Kang
Ki-Doo
KD
Park
Sang-Jun
SJ