Chemical and electronic properties of the ITO/Al(2)O(3) interface.
The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.
Gassenbauer
Yvonne
Y
Institute of Materials Science, Darmstadt University of Technology, D-64287, Darmstadt, Germany.
Wachau
André
A
Klein
Andreas
A