Theoretical analysis of gas-phase front-side attack identity S(N)2(C) and S(N)2(Si) reactions with retention of configuration.
Gas-phase front-side attack identity S(N)2(C) and S(N)2(Si) reactions, CH(3)X1 + X2(-) --> CH(3)X2 + X1(-) and SiH(3)X1 + X2(-) --> SiH(3)X2 + X1(-) (X = F, Cl), are investigated by the ab initio method and molecular face (MF) theory. The computations have been performed at the CCSD(T)/aug-cc-pVTZ//MP2/6-311++G(3df,3pd) and CISD/aug-cc-pVDZ levels. Front-side attack identity S(N)2 reactions for both SiH(3)X and CH(3)X have double-well potential energy surfaces (PESs), but their transition-state positions are different relative to the positions of reactants and products: it is lower for SiH(3)X, and it is higher for CH(3)X. The minimum energy path for an S(N)2(Si) reaction with retention of configuration proceeds from a stable pentacoordinated anion intermediate of C(s) symmetry (TBP) via a C(s) transition state (SP) to a complementary pentacoordinated intermediate (TBP) and finally up to separate products. Berry pseudorotation has been observed in the front-side attack identity S(N)2(Si) reactions with F(-) and Cl(-) along the intrinsic reaction coordinate (IRC) routes. In addition, the geometrical transformations of front-side attack identity S(N)2(C) and S(N)2(Si) reactions based on the IRC calculations at the MP2/6-311++G(3df, 3pd) level of theory are described compared with those of corresponding back-side attack reactions. The difference between front-side attack identity S(N)2(C) and S(N)2(Si) reactions has been demonstrated. In MF theory, the potential acting on an electron in a molecule (PAEM) is an important quantity; in particular, its D(pb) can measure the strength of a chemical bond in a molecule. It is found that the difference between D(pb) values of reactant and transition state may be related to the activation energy for front-side and back-side attack S(N)2(C) and S(N)2(Si) reactions, and the D(pb) curves along the IRC routes have features similar to those of the potential energy profiles for all of the back-side attack S(N)2 reactions and front-side attack S(N)2(Si) reaction with F(-). Furthermore, according to the MF theory, the spatial dynamic changing features of the molecular shapes and the face electron density are vividly depicted for the course of the reactions.
Yang
Zhong-Zhi
ZZ
Chemistry and Chemical Engineering Faculty, Liaoning Normal University, Dalian 116029, PR China. zzyang@lnnu.edu.cn
Ding
Yan-Li
YL
Zhao
Dong-Xia
DX
D002244:Carbon / Q000737:chemistry*; D004583:Electrons; D005740:Gases / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*; D013816:Thermodynamics
D005740:Gases; D002244:Carbon; D012825:Silicon