Orientational dependence of charge transport in disordered silicon nanowires.
We report on a theoretical study of surface roughness effects on charge transport in silicon nanowires with three different crystalline orientations, [100], [110] and [111]. Using an atomistic tight-binding model, key transport features such as mean-free paths, charge mobilities, and conductance scaling are investigated with the complementary Kubo-Greenwood and Landauer-Büttiker approaches. The anisotropy of the band structure of bulk silicon results in a strong orientation dependence of the transport properties of the nanowires. The best orientations for electron and hole transport are found to be the [110] and [111] directions, respectively.
Persson
Martin P
MP
Commissariat à l'Energie Atomique, INAC/SP2M/L_Sim, INAC/SP2M/GT, and LETI-MINATEC, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Lherbier
Aurélien
A
Niquet
Yann-Michel
YM
Triozon
François
F
Roche
Stephan
S