42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.
Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Bât. 220, Université Paris-Sud XI, F-91405, Orsay cedex, France. laurent.vivien@u-psud.fr
Laurent
L
Vivien
Johann
J
Osmond
Jean-Marc
JM
Fédéli
Delphine
D
Marris-Morini
Paul
P
Crozat
Jean-François
JF
Damlencourt
Eric
E
Cassan
Y
Y
Lecunff
Suzanne
S
Laval
D017076:Computer-Aided Design; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000528:radiation effects*; D008027:Light; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry*; D014159:Transducers
D005857:Germanium; D012825:Silicon