Orientational dependence of charge transport in disordered silicon nanowires.
We report on a theoretical study of surface roughness effects on charge transport in silicon nanowires with three different crystalline orientations, [100], [110] and [111]. Using an atomistic tight-binding model, key transport features such as mean-free paths, charge mobilities, and conductance scaling are investigated with the complementary Kubo-Greenwood and Landauer-Büttiker approaches. The anisotropy of the band structure of bulk silicon results in a strong orientation dependence of the transport properties of the nanowires. The best orientations for electron and hole transport are found to be the [110] and [111] directions, respectively.
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Martin P
MP
Persson
Aurélien
A
Lherbier
Yann-Michel
YM
Niquet
François
F
Triozon
Stephan
S
Roche