Integratable nanowire transistors.
We report a structure to control nanowire location and growth direction and demonstrate top-gated, metal-oxide-semiconductor, field-effect transistors (MOSFETs) using this structure. The nanowires wereengineered to grow against an oxide surface of a (001), silicon-on-insulator substrate, enabling straightforward fabrication of MOSFETs exhibiting an Io/Ioff ratio approximately 104 and a subthreshold slope of approximately 155 mV/decade. Though nanowires were engineered to grow in (110) directions, the nanowires still grew by the addition of {111) planes.
Quitoriano
Nathaniel J
NJ
Information and Quantum Systems Laboratory, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA. nateq@hp.com
Kamins
Theodore I
TI