Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.
Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.
Shen
Guozhen
G
Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China. gzshen@ustc.edu
Chen
Di
D
Chen
Po-Chiang
PC
Zhou
Chongwu
C
D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D005740:Gases / Q000737:chemistry; D008027:Light; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012542:Scattering, Radiation; D013440:Sulfides / Q000737:chemistry*; D013499:Surface Properties
D005740:Gases; D046911:Macromolecular Substances; D013440:Sulfides; D005708:Gallium