title: High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides.
abstract: The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, mu reaches 7x10(4) cm(2)/V s at 300 K for n=2.4x10(12)/cm(2), 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10(5) cm(2)/V s at low temperature. The temperature-dependent resistivity rho(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8+/-0.5 eV.
authors.affiliation: Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: X
authors.initials: X
authors.lastname: Hong
authors.forename: A
authors.initials: A
authors.lastname: Posadas
authors.forename: K
authors.initials: K
authors.lastname: Zou
authors.forename: C H
authors.initials: CH
authors.lastname: Ahn
authors.forename: J
authors.initials: J
authors.lastname: Zhu