Ionic field effect transistors with sub-10 nm multiple nanopores.
We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.
Nam
Sung-Wook
SW
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
Rooks
Michael J
MJ
Kim
Ki-Bum
KB
Rossnagel
Stephen M
SM