title: Ionic field effect transistors with sub-10 nm multiple nanopores.
abstract: We report a new method to fabricate electrode-embedded multiple nanopore structures with sub-10 nm diameter, which is designed for electrofluidic applications such as ionic field effect transistors. Our method involves patterning pore structures on membranes using e-beam lithography and shrinking the pore diameter by a self-limiting atomic layer deposition process. We demonstrate that 70-80 nm diameter pores can be shrunk down to sub-10 nm diameter and that the ionic transport of KCl electrolyte can be efficiently manipulated by the embedded electrode within the membrane.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Nam
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Rooks
authors.forename: Ki-Bum
authors.initials: KB
authors.lastname: Kim
authors.forename: Stephen M
authors.initials: SM
authors.lastname: Rossnagel