A diode side-pumped KTiOAsO4 Raman laser.
A KTiOAsO(4) Raman laser is realized within a diode side-pumped acousto-optically Q-switched Nd:YAG laser. Efficient nanosecond first-Stokes generations at 1091.4 nm are obtained with three 30-mm-long KTA crystals. Under an incident diode power of 60.9 W and a pulse repetition rate of 4 kHz, a first-Stokes power of 4.55 W is obtained, corresponding to a diode-to-Stokes conversion efficiency of 7.5%. The single pulse energy is up to 1.14 mJ and the peak power is 18.0 kW.
Liu
Zhaojun
Z
School of Information Science & Engineering, Shandong University, Jinan, Shandong 250100, PR China.
Wang
Qingpu
Q
Zhang
Xingyu
X
Zhang
Sasa
S
Chang
Jun
J
Cong
Zhenhua
Z
Sun
Wenjia
W
Jin
Guofan
G
Tao
Xutang
X
Sun
Youxuan
Y
Zhang
Shaojun
S
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013059:Spectrum Analysis, Raman / Q000295:instrumentation*