title: Metallization of the single component molecular semiconductor [Ni(ptdt)2] under very high pressure.
abstract: The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S(8)C(9)H(6))(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa.
authors.affiliation: Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee Florida 32310, USA.
authors.forename: Hengbo
authors.initials: H
authors.lastname: Cui
authors.forename: James S
authors.initials: JS
authors.lastname: Brooks
authors.forename: Akiko
authors.initials: A
authors.lastname: Kobayashi
authors.forename: Hayao
authors.initials: H
authors.lastname: Kobayashi