title: A diode side-pumped KTiOAsO4 Raman laser.
abstract: A KTiOAsO(4) Raman laser is realized within a diode side-pumped acousto-optically Q-switched Nd:YAG laser. Efficient nanosecond first-Stokes generations at 1091.4 nm are obtained with three 30-mm-long KTA crystals. Under an incident diode power of 60.9 W and a pulse repetition rate of 4 kHz, a first-Stokes power of 4.55 W is obtained, corresponding to a diode-to-Stokes conversion efficiency of 7.5%. The single pulse energy is up to 1.14 mJ and the peak power is 18.0 kW.
authors.affiliation: School of Information Science & Engineering, Shandong University, Jinan, Shandong 250100, PR China.
authors.forename: Zhaojun
authors.initials: Z
authors.lastname: Liu
authors.forename: Qingpu
authors.initials: Q
authors.lastname: Wang
authors.forename: Xingyu
authors.initials: X
authors.lastname: Zhang
authors.forename: Sasa
authors.initials: S
authors.lastname: Zhang
authors.forename: Jun
authors.initials: J
authors.lastname: Chang
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Cong
authors.forename: Wenjia
authors.initials: W
authors.lastname: Sun
authors.forename: Guofan
authors.initials: G
authors.lastname: Jin
authors.forename: Xutang
authors.initials: X
authors.lastname: Tao
authors.forename: Youxuan
authors.initials: Y
authors.lastname: Sun
authors.forename: Shaojun
authors.initials: S
authors.lastname: Zhang
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013059:Spectrum Analysis, Raman / Q000295:instrumentation*