Resistance noise in electrically biased bilayer graphene.
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene are strongly connected to its band structure and display a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization, and screening properties of bilayer graphene.
Pal
Atindra Nath
AN
Department of Physics, Indian Institute of Science, Bangalore 560 012, India. atin@physics.iisc.ernet.in
Ghosh
Arindam
A