Large electric field effect in electrolyte-gated manganites.
We have studied electrostatic field-induced doping in La0.8Ca0.2MnO3 transistors using electrolyte as a gate dielectric. For positive gate bias, electron doping drives a transition from a ferromagnetic metal to an insulating ground state. The thickness of the electrostatically doped layer depends on bias voltage but can extend to 5 nm requiring a field doping of 2x10;{15} charges per cm;{2} equivalent to 2.5 electrons per unit cell area. In contrast, negative gate voltages enhance the metallic conductivity by 30%.
Dhoot
Anoop Singh
AS
Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
Israel
Casey
C
Moya
Xavier
X
Mathur
Neil D
ND
Friend
Richard Henry
RH