title: Scaling theory of magnetoresistance and carrier localization in Ga1-xMnxAs.
abstract: We compare experimental resistivity data on Ga1-xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. The characteristic features of the temperature dependent resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. However, accounting for thermal fluctuations is crucial for a quantitative description of the magnetic field induced changes in resistance. While the noninteracting scaling theory is in reasonable agreement with the data, we find clear evidence for interaction effects at low temperatures.
authors.affiliation: Budapest University of Technology and Economics, H-1521 Budapest, Hungary and Department of Physics, University of Oradea, 410087 Oradea, Romania.
authors.forename: C P
authors.initials: CP
authors.lastname: Moca
authors.forename: B L
authors.initials: BL
authors.lastname: Sheu
authors.forename: N
authors.initials: N
authors.lastname: Samarth
authors.forename: P
authors.initials: P
authors.lastname: Schiffer
authors.forename: B
authors.initials: B
authors.lastname: Janko
authors.forename: G
authors.initials: G
authors.lastname: Zarand