title: Large electric field effect in electrolyte-gated manganites.
abstract: We have studied electrostatic field-induced doping in La0.8Ca0.2MnO3 transistors using electrolyte as a gate dielectric. For positive gate bias, electron doping drives a transition from a ferromagnetic metal to an insulating ground state. The thickness of the electrostatically doped layer depends on bias voltage but can extend to 5 nm requiring a field doping of 2x10;{15} charges per cm;{2} equivalent to 2.5 electrons per unit cell area. In contrast, negative gate voltages enhance the metallic conductivity by 30%.
authors.affiliation: Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
authors.forename: Anoop Singh
authors.initials: AS
authors.lastname: Dhoot
authors.forename: Casey
authors.initials: C
authors.lastname: Israel
authors.forename: Xavier
authors.initials: X
authors.lastname: Moya
authors.forename: Neil D
authors.initials: ND
authors.lastname: Mathur
authors.forename: Richard Henry
authors.initials: RH
authors.lastname: Friend