title: Energy dependence corrections to MOSFET dosimetric sensitivity.
abstract: Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.
authors.affiliation: City University of Hong Kong, Dept. of Physics and Materials Science Kowloon Tong, Hong Kong.
authors.forename: T
authors.initials: T
authors.lastname: Cheung
authors.forename: M J
authors.initials: MJ
authors.lastname: Butson
authors.forename: P K N
authors.initials: PK
authors.lastname: Yu
mesh_terms: D004307:Dose-Response Relationship, Radiation; D011874:Radiometry / Q000295:instrumentation*; D013816:Thermodynamics; D014173:Transistors, Electronic; D014965:X-Rays