title: X-ray- and electron-induced infrared emission spectroscopy.
abstract: We demonstrate the use of Fourier transform infrared (IR) spectroscopy for midinfrared emission measurements following x-ray or electron excitation. Spectra from an InAs low band-gap semiconductor film, which emits in the IR from 3000 to 3400 cm(-1), are presented. There is good agreement between the present results and previously published laser-excited spectra. Using focused beams, it should be possible to perform sub-diffraction-limited IR imaging. In addition, simultaneous structural and electronic analysis could be performed using the x-ray or electron excitation probes.
authors.affiliation: Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: R A
authors.initials: RA
authors.lastname: Rosenberg
authors.forename: M
authors.initials: M
authors.lastname: Abu Haija
authors.forename: S P
authors.initials: SP
authors.lastname: Watkins