Tunneling between edge states in a quantum spin Hall system.
We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.
Ström
Anders
A
Department of Physics, University of Gothenburg, SE 412 96 Gothenburg, Sweden.
Johannesson
Henrik
H