title: Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
abstract: Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.
authors.affiliation: Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan. tanabe@iis.u-tokyo.ac.jp
authors.forename: Katsuaki
authors.initials: K
authors.lastname: Tanabe
authors.forename: Masahiro
authors.initials: M
authors.lastname: Nomura
authors.forename: Denis
authors.initials: D
authors.lastname: Guimard
authors.forename: Satoshi
authors.initials: S
authors.lastname: Iwamoto
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D036103:Nanotechnology / Q000295:instrumentation*; D045663:Quantum Dots; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; D012825:Silicon