title: Reversible electrowetting on superhydrophobic double-nanotextured surfaces.
abstract: The paper reports on wetting, electrowetting (EW), and systematic contact angle hysteresis measurements after electrowetting of superhydrophobic silicon nanowire surfaces (NWs). The surfaces consist of C4F8-coated silicon nanowires grown on Si/SiO2 substrate. Different surfaces modulating (i) the dielectric layer thickness and (ii) the nanotexturation were investigated in this study. It was found that the superhydrophobic NWs display different EW behaviors according to their double nanotexturation with varying droplet impalement levels. Some surfaces exhibited a total reversibility to EW with no impalement (contact angle variation of 35+/-2 degrees at 190 VTRMS with deionized water), whereas other surfaces showed nonreversible behavior to EW with partial droplet impalement. A scenario is proposed to explain the unique properties of these surfaces.
authors.affiliation: Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS-8520, Cité Scientifique, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, France.
authors.forename: Florian
authors.initials: F
authors.lastname: Lapierre
authors.forename: Vincent
authors.initials: V
authors.lastname: Thomy
authors.forename: Yannick
authors.initials: Y
authors.lastname: Coffinier
authors.forename: Ralf
authors.initials: R
authors.lastname: Blossey
authors.forename: Rabah
authors.initials: R
authors.lastname: Boukherroub
mesh_terms: D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012822:Silicon Dioxide; D012825:Silicon