Nanoparticle assemblies as memristors.
Recently a memristor ( Chua, L. O. IEEE Trans. Circuit Theory 1971 , 18 , 507 ), the fourth fundamental passive circuit element, has been demonstrated as thin film device operations ( Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. Nature (London) 2008 , 453 , 80 ; Yang, J. J.; Pickett. M. D.; Li, X.; Ohlberg, D. A. A.; Stewart, D. R.; Williams, R. S. Nat. Nanotechnol. 2008 , 3 , 429 ). A new addition to the memristor family can be nanoparticle assemblies consisting of an infinite number of monodispersed, crystalline magnetite (Fe(3)O(4)) particles. Assembly of nanoparticles that have sizes below 10 nm, exhibits at room temperature a voltage-current hysteresis with an abrupt and large bipolar resistance switching (R(OFF)/R(ON) approximately 20). Interestingly, observed behavior could be interpreted by adopting an extended memristor model that combines both a time-dependent resistance and a time-dependent capacitance. We also observed that such behavior is not restricted to magnetites; it is a general property of nanoparticle assemblies as it was consistently observed in different types of spinel structured nanoparticles with different sizes and compositions. Further investigation into this new nanoassembly system will be of importance to the realization of the next generation nanodevices with potential advantages of simpler and inexpensive device fabrications.
Kim
Tae Hee
TH
Department of Physics, Ewha Womans University, Seoul 120-750, Korea. taehee@ewha.ac.kr
Jang
Eun Young
EY
Lee
Nyun Jong
NJ
Choi
Deung Jang
DJ
Lee
Kyung-Jin
KJ
Jang
Jung-tak
JT
Choi
Jin-sil
JS
Moon
Seung Ho
SH
Cheon
Jinwoo
J