The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.
We studied the structural properties of (Ge+SiO2)/SiO2 multilayer films, especially the influence of the deposition temperature and the parameters of subsequent annealing on the formation and spatial correlation of Ge quantum dots in an amorphous silica matrix. We showed that in-layer and inter-layer spatial correlations of the formed Ge quantum dots strongly depend on the deposition temperature. For suitable chosen deposition parameters, highly correlated dot positions in all three dimensions can be obtained. It is demonstrated that the degree of the spatial correlation of quantum dots influences the size distribution width, which further affects the macroscopic properties of the quantum dot arrays.
Ruder Bosković Institute, Bijenicka cesta 54, 10000 Zagreb, Croatia. mbuljan@irb.hr
M
M
Buljan
U V
UV
Desnica
G
G
Drazić
M
M
Ivanda
N
N
Radić
P
P
Dubcek
K
K
Salamon
S
S
Bernstorff
V
V
Holý
D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D005857:Germanium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D005740:Gases; D046911:Macromolecular Substances; D005857:Germanium; D012822:Silicon Dioxide