Electronic structures of InN/GaN quantum dots.
In this letter, ab-initio calculations are performed to study the electronic structures of the InN quantum dot embedded in the GaN matrix. By analyzing the site-decomposed densities of states, an anisotropic potential well in the dot region is clearly depicted. The In atom at the center of the quantum dot provides the highest densities of states for discrete peaks while the Ga atoms nearby In atoms also act as contributor due to hybridization. The partial charge densities distribution of conduction band minimum and valance band maximum illustrates that the charges are well localized in the InN dot region.
Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
Shanshan
S
Chen
Wei
W
Lin
Shuping
S
Li
Junyong
J
Kang