Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.
The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.
Department of Materials Science and Engineering, Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology, Gwangju, Korea.
Tae-Wook
TW
Kim
Hyejung
H
Choi
Seung-Hwan
SH
Oh
Minseok
M
Jo
Gunuk
G
Wang
Byungjin
B
Cho
Dong-Yu
DY
Kim
Hyunsang
H
Hwang
Takhee
T
Lee