Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy.
Direct integration of III-V compound semiconductor (GaAs) on silicon (Si) substrates has been demonstrated using selective epitaxy on patterned substrates. GaAs was grown directly on patterned (001), (011), and (111) Si substrates covered with 60 nm thick thermally grown SiO(2). After growth, GaAs crystals with both dot and wire shapes show preferred {011} facets. GaAs grown on particular wire patterns which are parallel to {011} surfaces shows uniform nanowire structure. Transmission electron microscopy shows dislocation-free GaAs with low density of anti-phase domain boundaries along [111] directions. Metal-oxide-semiconductor structures with aluminum oxide as gate dielectric were fabricated using GaAs nanowires on Si. Capacitance-voltage measurements show clear inversion and accumulation.
Device Research Laboratory, Electrical Engineering, University of California, Los Angeles, CA 90095, USA.
Zuoming
Z
Zhao
Kameshwar
K
Yadavalli
Zhibiao
Z
Hao
Kang L
KL
Wang