Integrated ferroelectric stacked MIM capacitors with 100 nF/mm(2) and 90 V breakdown as replacement for discretes.
This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm(2) combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85 degrees C and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking of capacitors. The reliability of these ferroelectric capacitors was studied in detail with accelerated lifetime testing. The high performance of the integrated capacitors in this paper shows great potential for applications demanding high capacitance densities combined with electrostatic discharge protection.
Roest
Aarnoud
A
NXP Semiconductors, Eindhoven, the Netherlands. aarnoud.roest@nxp.com
Mauczok
Rüdiger
R
Reimann
Klaus
K
van Leuken-Peters
Linda
L
Klee
Mareike
M