A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap.
Broadband superluminescent light emitting diodes are realized by a post-growth annealing process, on modulation p-doped multiple InAs/InGaAs/GaAs quantum dot layer structures, under a GaAs proximity cap. The device exhibits a large and flat emission with spectral width up to 132 nm at 2 mW. This is mainly attributed to the reduction of the energy separation between the ground state and the excited state, in addition to the optical quality of the intermixed modulation p-doped quantum dot materials being comparable to that of the as-grown sample.
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK. ziyang.zhang@shef.ac.uk
Z Y
ZY
Zhang
Q
Q
Jiang
I J
IJ
Luxmoore
R A
RA
Hogg
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation* / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation*; D045663:Quantum Dots; D012666:Semiconductors
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium