From shelled Ge nanowires to SiC nanotubes.
Shelled germanium nanowires up to 100 nm in diameter and several micrometers in length were prepared by low pressure chemical vapor deposition (LPCVD) of tris(trimethylsilyl)germane (SiMe(3))(3)GeH. Vapors of the precursor were deposited on tantalum substrates in an oven at 365 degrees C. Subsequently, the products were annealed at 700 degrees C in vacuum. The wires consist of a crystalline Ge core surrounded by a two-layer jacket. The presence of hexagonal Ge in the core was documented in some of the nanowires. The inner jacket is formed by amorphous germanium, the outer part by an Si/C material. By annealing at 900 degrees C, germanium in the core is expelled and nanotubes formed by the Si/C material remain. The samples were studied by SEM, HRTEM, EDX, FTIR and Raman spectroscopy, and the XRD technique.
Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135,165 02 Prague 6, Czech Republic. drinek@icpf.cas.cz
Vladislav
V
Drínek
Jan
J
Subrt
Mariana
M
Klementová
Milan
M
Rieder
Radek
R
Fajgar