Geometry transformation and alterations of periodically patterned Si nanotemplates by dry oxidation.
We report on the size-dependent transformation and geometrical modifications of periodically patterned Si templates by a combination of dry oxidation and chemical etching. Deep ultraviolet lithography patterned circular holes with diameters varying between 190 nm and 1 microm on Si wafers were oxidized at 1000 degrees C using dry oxygen for various durations, with selected samples chemically etched for oxide removal for additional alterations. An interesting phenomenon of a circular-to-square shape transformation of the holes was observed, which was particularly pronounced in the sub-200 nm regime. We tentatively attribute the change to the surface energy and geometry constraints in nanoscale patterns.
Materials Science and Engineering Program, Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA 92093-0411, USA.
Jeongwon
J
Park
Li-Han
LH
Chen
Daehoon
D
Hong
Chulmin
C
Choi
Mariana
M
Loya
Karla
K
Brammer
Prab
P
Bandaru
Sungho
S
Jin