Metal contacts in nanocrystalline n-type GaN: Schottky diodes.
Contact properties in nanocrystalline n-GaN in thin film form were studied by depositing nanocrystalline films onto aluminium coated fused silica substrates by high pressure sputtering of Si (1 at%) doped GaN target. Schottky diodes were realized with Au, Ni and Pd as top contacts on the nanocrystalline n-GaN films to examine the contact properties of the diodes thus formed. Variation of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky diodes were recorded at different temperatures and analyzed in the light of the existing theories.
Das
S N
SN
Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700032, India.
Sarangi
S
S
Sahu
S N
SN
Pal
A K
AK