Geometry transformation and alterations of periodically patterned Si nanotemplates by dry oxidation.
We report on the size-dependent transformation and geometrical modifications of periodically patterned Si templates by a combination of dry oxidation and chemical etching. Deep ultraviolet lithography patterned circular holes with diameters varying between 190 nm and 1 microm on Si wafers were oxidized at 1000 degrees C using dry oxygen for various durations, with selected samples chemically etched for oxide removal for additional alterations. An interesting phenomenon of a circular-to-square shape transformation of the holes was observed, which was particularly pronounced in the sub-200 nm regime. We tentatively attribute the change to the surface energy and geometry constraints in nanoscale patterns.
Park
Jeongwon
J
Materials Science and Engineering Program, Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA 92093-0411, USA.
Chen
Li-Han
LH
Hong
Daehoon
D
Choi
Chulmin
C
Loya
Mariana
M
Brammer
Karla
K
Bandaru
Prab
P
Jin
Sungho
S