Noise in ZnO nanowire field effect transistors.
The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current.
Xiong
Hao D
HD
Semiconductor Electronics Division, National Institute of Standards and Technology, 100 Bureau Drive, M.S. 8120, Gaithersburg, Maryland 20899-8120, USA.
Wang
Wenyong
W
Suehle
John S
JS
Richter
Curt A
CA
Hong
Woong-Ki
WK
Lee
Takhee
T