Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire.
The characteristics of domain wall (DW) pinning at a notch in a spin-valve nanowire were investigated when a DW was created by a current, flowing into a spin-valve nanowire. It was found that DW pinning at a notch is quite sensitive to the magnitude of the current and its polarity. The current-polarity dependence of DW pinning is likely due to the spin structure in the core of the DW, which is determined by an Oersted field from the current in a Cu layer. This indicates that the control of DW pinning at a notch in a nanowire can be achieved by a current acting on its own, which is an important advantage of this method, compared with field-induced DW control.
Department of Materials Science and Engineering, GIST, School of Photonics Science and Technology, Gwangju, Korea.
Youngman
Y
Jang
Seungha
S
Yoon
Kisu
K
Lee
Seungkyo
S
Lee
Chunghee
C
Nam
B K
BK
Cho