Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire.
Self-organized and highly ordered GaN nanorods were grown without catalyst on r-plane sapphire using a combination of molecular beam epitaxy and metal-organic vapor-phase epitaxy. AlN nucleation centers for the nanorods were prepared by nitridation of the sapphire in a metal-organic vapor-phase epitaxy reactor, while the nanorods were grown by molecular beam epitaxy. A coalesced two-dimensional GaN layer was observed between the nanorods. The nanorods are inclined by 62 degrees towards the [Formula: see text]-directions of the a-plane GaN layer. The high degree of ordering and the structural perfection were confirmed by micro-photoluminescence measurements.
Aschenbrenner
T
T
Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee NW1, Bremen, Germany. tasche@ifp.uni-bremen.de
Kruse
C
C
Kunert
G
G
Figge
S
S
Sebald
K
K
Kalden
J
J
Voss
T
T
Gutowski
J
J
Hommel
D
D