Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots.
The device fabrication and integration of nanopatterned quantum dots (PQDs) are realized through the demonstration of a broad-area light-emitting diode with PQD active region. The device involves two growth processes, first to form PQDs by selective-area epitaxy on an SiO(2) mask and then to complete the device structure after mask removal. Linear current-voltage characteristics are observed with sharp turn-on, low leakage current and low forward resistance. Electroluminescence spectra show PQD intraband structure and low quenching of emission from 77 K to room temperature. Light-current measurements demonstrate external quantum efficiency per PQD comparable to self-assembled QDs, thus providing a possible route toward individually addressable single QD devices.
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA.
P S
PS
Wong
B L
BL
Liang
J
J
Tatebayashi
L
L
Xue
N
N
Nuntawong
M N
MN
Kutty
S R J
SR
Brueck
D L
DL
Huffaker