Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission.
In(x)Ga(1-x)As wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6 degrees - 9 degrees tapered shape, have sharp 2-5 nm tips, are 4 microm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation. Core-shell InGaAs/GaAs layered quantum well structures are grown which exhibit quantum confinement of carriers, and emission below the silicon bandgap.
Department of Electrical Engineering, University of California at Berkeley, Berkeley, California 94720, USA.
Michael
M
Moewe
Linus C
LC
Chuang
Shanna
S
Crankshaw
Kar Wei
KW
Ng
Connie
C
Chang-Hasnain