Electrically pumped hybrid evanescent Si/InGaAsP lasers.
Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mum-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm2. Continuous wave laser operation was obtained up to 45 degrees C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.
Sun
Xiankai
X
Department of Applied Physics, MC 128-95, California Institute of Technology, Pasadena, California 91125, USA.
Zadok
Avi
A
Shearn
Michael J
MJ
Diest
Kenneth A
KA
Ghaffari
Alireza
A
Atwater
Harry A
HA
Scherer
Axel
A
Yariv
Amnon
A