Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.
Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between <111> and <112>, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.
Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany.
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Zardo
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L
Yu
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Conesa-Boj
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Estradé
Pierre Jean
PJ
Alet
J
J
Rössler
M
M
Frimmer
P
P
Roca I Cabarrocas
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Peiró
J
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Arbiol
J R
JR
Morante
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Fontcuberta I Morral