Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates.
We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.
Seagate Research, 1251 Waterfront Place, Pittsburgh, PA 15222, USA.
Martin G
MG
Forrester
Joachim W
JW
Ahner
Mark D
MD
Bedillion
Cedric
C
Bedoya
Dierk G
DG
Bolten
Kai-Chieh
KC
Chang
Gudrun
G
de Gersem
Shan
S
Hu
Earl C
EC
Johns
Maissarath
M
Nassirou
Jason
J
Palmer
Andreas
A
Roelofs
Markus
M
Siegert
Shingo
S
Tamaru
Venugopalan
V
Vaithyanathan
Florin
F
Zavaliche
Tong
T
Zhao
Yongjun
Y
Zhao