Carrier transport mechanisms of bistable memory devices fabricated utilizing core-shell CdSe/ZnSe quantum-dot/multi-walled carbon nanotube hybrid nanocomposites.
Transmission electron microscopy images showed that conjugation between single core-shell CdSe/ZnSe quantum dots (QDs) and oxidized multi-walled carbon nanotubes (MWCNTs) was achieved through the complexation reaction. Current-voltage (I-V) measurements on Al/CdSe:MWCNT conjugated nanocomposite/indium-tin-oxide devices at 300 K showed that the on/off ratio of the current bistability was as large as about 10(4), which was significantly increased due to an enhancement of the carrier transfer efficiency between the CdSe/ZnSe QDs and the MWCNTs. Carrier transport mechanisms of the bistable memory devices fabricated utilizing CdSe/ZnSe QD/MWCNT hybrid nanocomposite are described on the basis of the I-V results.
Li
Fushan
F
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
Son
Dong Ick
DI
Kim
Tae Whan
TW
Ryu
Euidock
E
Kim
Sang Wook
SW
D019187:Cadmium Compounds / Q000737:chemistry*; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D045663:Quantum Dots; D018036:Selenium Compounds / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D017967:Zinc Compounds / Q000737:chemistry*
D019187:Cadmium Compounds; D037742:Nanotubes, Carbon; D018036:Selenium Compounds; D017967:Zinc Compounds; C058667:cadmium selenide; C044696:zinc selenide