SF6 plasma etching of silicon nanocrystals.
An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.
Liptak
R W
RW
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
Devetter
B
B
Thomas
J H
JH
Kortshagen
U
U
Campbell
S A
SA