Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film.
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
Choi
Joonhyuk
J
Department of Semiconductor Science, Dongguk University, Seoul, Korea.
Song
Jaehoon
J
Jung
Kyooho
K
Kim
Yongmin
Y
Im
Hyunsik
H
Jung
Woong
W
Kim
Hyungsang
H
Do
Young Ho
YH
Kwak
June Sik
JS
Hong
Jinpyo
J