In situ preparation of an ultra-thin nanomask on a silicon wafer.
Porous nanomasks have been prepared in situ on an insulating silicon wafer by anodization of an aluminum film grown on it. Ultra-thin nanomasks, around 50 nm thick, were fabricated by utilizing a stop signal, a vivid color appearing at the air-electrolyte interface, and the process involved showed excellent repeatability. Finally, 2D nanoscale p-n junction arrays were fabricated on a silicon on insulator (SOI) wafer using the ultra-thin nanomasks prepared. The experimental results are in good agreement with the simulated results on the characteristics of the anodization process involved.
Department of Electrical Engineering and Computer Science, and Institute for Surface and Interface Science, University of California, Irvine, CA 92697, USA.
R W
RW
Mao
S K
SK
Lin
C S
CS
Tsai