Correlated electric fluctuations in GaN nanowire devices.
We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
Center for Nanoscience and Technology, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
L C
LC
Li
S Y
SY
Huang
J A
JA
Wei
Y W
YW
Suen
M W
MW
Lee
W H
WH
Hsieh
T W
TW
Liu
C C
CC
Chen