Correlated electric fluctuations in GaN nanowire devices.
We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
Li
L C
LC
Center for Nanoscience and Technology, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
Huang
S Y
SY
Wei
J A
JA
Suen
Y W
YW
Lee
M W
MW
Hsieh
W H
WH
Liu
T W
TW
Chen
C C
CC