Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K.
Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few microm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.
Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan.
Shao-Pin
SP
Chiu
Hui-Fang
HF
Chung
Yong-Han
YH
Lin
Ji-Jung
JJ
Kai
Fu-Rong
FR
Chen
Juhn-Jong
JJ
Lin
D003460:Crystallization / Q000379:methods*; D017097:Electric Impedance; D004579:Electron Transport; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing / Q000379:methods*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties; D013696:Temperature; D017971:Tin Compounds / Q000737:chemistry*
D046911:Macromolecular Substances; D017971:Tin Compounds; C109984:indium tin oxide