Synthesis and characterization of TiOx nanowires using a novel silicon oxide support layer.
Titanium oxide (TiO(x)) nanowires of various compositions were synthesized using a vapour-liquid-solid growth process without the need of a titanium-based support layer. The process utilized liquid gold droplets, evaporated titanium vapours, and an argon-5% oxygen gas mixture at 1100 degrees C. A thin layer of thermally grown silicon oxide was used as the support layer. The resulting nanowires were 80-100 nm in diameter with lengths varying from 0.5 to 10 microm. Nanowires of TiO, as opposed to TiO(2), were formed in low pressures of argon-oxygen. Environmental pressure was found to greatly affect nanowire quality. Surface abrasion did not contribute to or inhibit the overall growth process. X-ray photon spectroscopy and Auger electron spectroscopy confirmed the presence of titanium. X-ray diffraction and transmission electron microscopy electron diffraction analysis confirmed the presence of rutile and face centred cubic crystal structures in both materials.
Lau
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M
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada.
Dai
L
L
Bosnick
K
K
Evoy
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