The heterogeneous integration of single-walled carbon nanotubes onto complementary metal oxide semiconductor circuitry for sensing applications.
A simple methodology for integrating single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry is presented. The SWNTs were incorporated onto the CMOS chip as the feedback resistor of a two-stage Miller compensated operational amplifier utilizing dielectrophoretic assembly. The measured electrical properties from the integrated SWNTs yield ohmic behavior with a two-terminal resistance of approximately 37.5 kOmega and the measured small signal ac gain (-2) from the inverting amplifier confirmed successful integration of carbon nanotubes onto the CMOS circuitry. Furthermore, the temperature response of the SWNTs integrated onto CMOS circuitry has been measured and had a thermal coefficient of resistance (TCR) of -0.4% degrees C(-1). This methodology, demonstrated for the integration of SWNTs onto CMOS technology, is versatile, high yield and paves the way for the realization of novel miniature carbon-nanotube-based sensor systems.
Department of Electrical and Computer Engineering, NSF Center for High-rate Nanomanufacturing, Northeastern University, Boston, MA 02115, USA. chen.ch@neu.edu
Chia-Ling
CL
Chen
Vinay
V
Agarwal
Sameer
S
Sonkusale
Mehmet R
MR
Dokmeci
D000537:Aluminum Oxide / Q000737:chemistry*; D055590:Electromagnetic Phenomena; D005246:Feedback; D008839:Microelectrodes; D008855:Microscopy, Electron, Scanning; D055616:Microtechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D013696:Temperature
D037742:Nanotubes, Carbon; D000537:Aluminum Oxide