Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot-multi-walled carbon nanotube nanocomposites.
Transmission electron microscopy images showed that the ZnO quantum dots (QDs) were conjugated with multi-walled carbon nanotubes (MWCNTs). Bistable memories utilizing an ensemble of the ZnO QD-MWCNT heterostructures were developed and the storage capability of the devices was significantly enhanced due to the conjugation of the ZnO QDs and the MWCNTs. Operating mechanisms of memory devices fabricated utilizing the ZnO QD-MWCNT heterostructures are described on the basis of the current-voltage results. The memory devices exhibited excellent environmental stability at ambient conditions.
Li
Fushan
F
National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea.
Son
Dong Ick
DI
Cho
Sung Hwan
SH
Kim
Tae Whan
TW
D003460:Crystallization / Q000379:methods; D004563:Electrochemistry / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D045663:Quantum Dots; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon; D015034:Zinc Oxide