Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation.
Modification of films containing Si nanocrystallites embedded in SiO2 by irradiation with high-energy ions was found to induce peaks in their low-frequency capacitance-voltage characteristics. Considering the nanocrystallite spatial distribution that follows the ion tracks we interpret these peaks as due to the charge transfer along these tracks, similar to the process that was reported previously for two-dimensional arrays of such crystallites. The ion irradiation of the above three-dimensional system appears to be useful then for the fabrication of nanostructures, which have also the properties of low-dimensional arrays.
Institute of Semiconductor Physics, SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia. antonova@isp.nsc.ru
I V
IV
Antonova
A G
AG
Cherkov
V A
VA
Skuratov
M S
MS
Kagan
J
J
Jedrzejewski
I
I
Balberg
D003198:Computer Simulation; D020450:Heavy Ions; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008956:Models, Chemical; D008968:Molecular Conformation / Q000528:radiation effects; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D045663:Quantum Dots; D011829:Radiation Dosage; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties / Q000528:radiation effects
D046911:Macromolecular Substances; D012825:Silicon