Effects of heat induced by two-photon absorption and free-carrier absorption in silicon-on-insulator nanowaveguides operating as all-optical wavelength converters.
We propose a new numerical model to analyze heat induced by two-photon absorption and free-carrier absorption, while high intensity optical pulses propagate along silicon-on-insulator (SOI) nanowaveguides (NWGs). Using this model, we demonstrate that such induced heat causes a shift in the amount of wavelength conversion and hence deteriorates the converter output characteristics for pulses in the picosecond regime. The wavelength shift induced by a pulse with maximum input intensity and full width at half-maximum of I(max)=1.5x10(10) W x cm(-2) and T(FWHM)=30 ps, propagating along a SOI NWG with an effective cross-sectional area of a(eff)=0.15 microm(2), is shown to be Delta lambda(s) approximately 8 pm. We also demonstrate that such a shift can be compensated by tuning the pump intensity down by approximately 6.33%.
Advanced Device Simulation Laboratory, Department of Electrical and Computer Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran 1411713116, Iran.
Siamak
S
Abdollahi
Mohammad Kazem
MK
Moravvej-Farshi