Probability current and antiresonances of particle tunneling through biased heterostructures.
A flow of independent particles, traveling across a biased heterostructure, is shown to produce an essentially constant probability current density in the gate. Based on this observation, a phenomenological boundary condition was proposed for evaluating the eigenfunctions of the Hamiltonian and for the computing the gate probability current density in a three-layer metal-oxide-semiconductor (MOS) heterostructure. Sharp antiresonances are obtained in the probability current, which are interpreted as quasi-bound states in the heterostructure. Results show that the antiresonant states should contribute the least to the gate current as the particles are strongly localized behind the interfacial barrier. The main contribution to the gate current of the MOS structure should come from the states between the antiresonances which are always supplied with particles from the bulk.
University of Bucharest, Faculty of Physics, P.O. Box MG-11, Bucharest-Magurele 077125, Romania.
V
V
Filip
D
D
Nicolaescu
Hei
H
Wong