The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation.
We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO(2)) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.
Institute of Semiconductor Physics, Siberian Division of the Russian Academy of Sciences, Novosibirsk, Russia. antonova@isp.nsc.ru
I V
IV
Antonova
M B
MB
Gulyaev
A G
AG
Cherkov
V A
VA
Volodin
D V
DV
Marin
V A
VA
Skuratov
J
J
Jedrzejewski
I
I
Balberg
D003460:Crystallization / Q000379:methods*; D020450:Heavy Ions; D008163:Luminescent Measurements; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D011829:Radiation Dosage; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D013499:Surface Properties / Q000528:radiation effects
D046911:Macromolecular Substances; D012822:Silicon Dioxide