Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates.
We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media.
Forrester
Martin G
MG
Seagate Research, 1251 Waterfront Place, Pittsburgh, PA 15222, USA.
Ahner
Joachim W
JW
Bedillion
Mark D
MD
Bedoya
Cedric
C
Bolten
Dierk G
DG
Chang
Kai-Chieh
KC
de Gersem
Gudrun
G
Hu
Shan
S
Johns
Earl C
EC
Nassirou
Maissarath
M
Palmer
Jason
J
Roelofs
Andreas
A
Siegert
Markus
M
Tamaru
Shingo
S
Vaithyanathan
Venugopalan
V
Zavaliche
Florin
F
Zhao
Tong
T
Zhao
Yongjun
Y