Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications.
Resistance switching characteristics of ZrO2 films with gold nanocrystals (nc-Au) embedded are investigated for nonvolatile memory applications. The sandwiched structure of top Au electrode/ZrO2 (with nc-Au embedded)/n+ Si exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistance switching from one state to the other can be achieved. This resistance switching behavior is reproducible and the ratio between the high and low resistance states can be as high as two orders. A long memory retention time and over 102 times DC sweep cycles are demonstrated. The ZrO2 films employing gold nanocrystals are promising to be used in the nonvolatile memory devices.
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
Weihua
W
Guan
Shibing
S
Long
Yuan
Y
Hu
Qi
Q
Liu
Qin
Q
Wang
Ming
M
Liu