The characterization of a single discrete bionanodot for memory device applications.
We investigated electronic properties of a biochemically synthesized cobalt oxide bionanodot (Co-BND) by means of scanning tunneling microscopy/spectroscopy (STM/STS) and Kelvin-probe force microscopy (KFM). Experimentally obtained I-V characteristics and numerically obtained dI/dV and (dI/dV)/(I/V) from I-V revealed the band gap energy, band position of valence and conduction band of the Co-BND. KFM observation shows that bias polarity dependent surface potential change after charge injection. The observed surface potential change indicates that the Co-BND has a charge storage capability. We demonstrated the application of Co-BNDs for electronic devices by choosing flash memory as the example device. The fabricated Co-BND embedded MOS memory showed clear memory operation due to the charge confinement in the embedded Co-BNDs.
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara, Japan.
Atsushi
A
Miura
Ryota
R
Tanaka
Yukiharu
Y
Uraoka
Nozomu
N
Matsukawa
Ichiro
I
Yamashita
Takashi
T
Fuyuki
D001052:Apoferritins / Q000737:chemistry / Q000235:genetics; D001709:Biotechnology / Q000295:instrumentation; D003035:Cobalt / Q000737:chemistry*; D055590:Electromagnetic Phenomena; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D016252:Microscopy, Scanning Tunneling; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry
D010087:Oxides; D003035:Cobalt; D012822:Silicon Dioxide; D001052:Apoferritins; C060728:cobalt oxide