A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.
This work investigates a nanoporous aluminum nitride (AlN) layer prepared using an anodic aluminum oxide (AAO) process and its application as a buffer layer for a GaN-based light-emitting diode (LED) fabricated on sapphire substrate. Following this AAO process, the average pore spacing and pore diameter of the nanoporous AlN layer were in the ranges 180-200 nm and 100-150 nm, respectively. The light output power of the GaN-based LED with a nanoporous AlN layer was about 53% higher than that of a GaN-based LED without a nanoporous AlN layer at an injection current of 20 mA. At an injection current of 80 mA, the light output power was increased by about 34%.
Department of Electro-Optical Engineering, National Taipei University of Technology, 1, sector 3, Chung-Hsiao East Road, Taipei 106, Taiwan, Republic of China. ocean@ntut.edu.tw
Lung-Chien
LC
Chen
Chih-Kai
CK
Wang
Jenn-Bin
JB
Huang
Lu-Sheng
LS
Hong
D017607:Aluminum Compounds / Q000737:chemistry*; D000537:Aluminum Oxide / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D016062:Porosity; D013499:Surface Properties
D017607:Aluminum Compounds; D046911:Macromolecular Substances; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium; D000537:Aluminum Oxide