Synthetic haggite V(4)O(6)(OH)(4) nanobelts: oxyhydroxide as a new catalog of smart electrical switch materials.
Synthetic haggite V(4)O(6)(OH)(4) has been successfully obtained for the first time after a delay of more than 50 years. Our careful analysis clarifies the formula of haggite as V(4)O(6)(OH)(4), rather than the long-standing known V(4)O(4)(OH)(6). The semiconductor of haggite shows a rapid increase of resistance by >10(4) orders of magnitude down to low temperatures, giving the first case of the oxyhydroxide compound showing semiconductor-insulator transitions. More intriguingly, the haggite product's nanobelt that can act as connecting units have potential in the construction of intelligent switching devices in future investigations.
Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Hefei, Anhui 230026, PR China.
Changzheng
C
Wu
Jun
J
Dai
Xiaodong
X
Zhang
Jinlong
J
Yang
Yi
Y
Xie