Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt.
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized.
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan, Republic of China. jhhe@cc.ee.ntu.edu.tw
J H
JH
He
P H
PH
Chang
C Y
CY
Chen
K T
KT
Tsai