Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots.
The device fabrication and integration of nanopatterned quantum dots (PQDs) are realized through the demonstration of a broad-area light-emitting diode with PQD active region. The device involves two growth processes, first to form PQDs by selective-area epitaxy on an SiO(2) mask and then to complete the device structure after mask removal. Linear current-voltage characteristics are observed with sharp turn-on, low leakage current and low forward resistance. Electroluminescence spectra show PQD intraband structure and low quenching of emission from 77 K to room temperature. Light-current measurements demonstrate external quantum efficiency per PQD comparable to self-assembled QDs, thus providing a possible route toward individually addressable single QD devices.
Wong
P S
PS
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA.
Liang
B L
BL
Tatebayashi
J
J
Xue
L
L
Nuntawong
N
N
Kutty
M N
MN
Brueck
S R J
SR
Huffaker
D L
DL