Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film.
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
Department of Semiconductor Science, Dongguk University, Seoul, Korea.
Joonhyuk
J
Choi
Jaehoon
J
Song
Kyooho
K
Jung
Yongmin
Y
Kim
Hyunsik
H
Im
Woong
W
Jung
Hyungsang
H
Kim
Young Ho
YH
Do
June Sik
JS
Kwak
Jinpyo
J
Hong