Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.
We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.
Kamerlingh Onnes Laboratorium, Universiteit Leiden, Leiden, The Netherlands.
M
M
Morales-Masis
S J
SJ
van der Molen
W T
WT
Fu
M B
MB
Hesselberth
J M
JM
van Ruitenbeek
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012666:Semiconductors; D018030:Silver Compounds / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D018030:Silver Compounds; C013251:silver sulfide