Ultra-low-k thin films of polyhedral oligomeric silsesquioxane/epoxy nanocomposites via covalent layer-by-layer assembly.
Polyhedral oligomeric silsesquioxane nanocomposites thin films on silicon surfaces were prepared by covalent layer-by-layer (LbL) assembly using octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) and 4,4(hexafluoroisopropylidene)dianiline (HID) as building blocks. The layer thickness increased linearly with the layer numbers. An ultra-low dielectric constant of approximately 1.57 was found with the LbL thin film. A novel approach to fabricate ultra low-k materials is demonstrated.
Department of Chemical Engineering and R&D Center for Membrane Technology, Chung Yuan Christian University, Chungli, Taoyuan 320, Taiwan.
Ying-Ling
YL
Liu
Chuan-Shun
CS
Liu
Wei-Hong
WH
Chen
Shi-Yi
SY
Chen
Ko-Shung
KS
Wang
Ming-Jyh
MJ
Hwu