Noise in ZnO nanowire field effect transistors.
The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current.
Semiconductor Electronics Division, National Institute of Standards and Technology, 100 Bureau Drive, M.S. 8120, Gaithersburg, Maryland 20899-8120, USA.
Hao D
HD
Xiong
Wenyong
W
Wang
John S
JS
Suehle
Curt A
CA
Richter
Woong-Ki
WK
Hong
Takhee
T
Lee