A crystallographic investigation of GaN nanostructures by reciprocal space mapping in a grazing incidence geometry.
Reciprocal space mapping with a two-dimensional (2D) area detector in a grazing incidence geometry was applied to determine crystallographic orientations of GaN nanostructures epitaxially grown on a sapphire substrate. By using both unprojected and projected reciprocal space mapping with a proper coordinate transformation, the crystallographic orientations of GaN nanostructures with respect to that of a substrate were unambiguously determined. In particular, the legs of multipods in the wurtzite phase were found to preferentially nucleate on the sides of tetrahedral cores in the zinc blende phase.
Lee
Sanghwa
S
Department of Physics, Kyunghee University, Dongdaemoon-gu, Seoul, Korea.
Sohn
Yuri
Y
Kim
Chinkyo
C
Lee
Dong Ryeol
DR
Lee
Hyun-Hwi
HH
D003460:Crystallization / Q000379:methods*; D003461:Crystallography / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing / Q000379:methods; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012031:Refractometry / Q000379:methods*; D013499:Surface Properties
D046911:Macromolecular Substances; C473348:gallium nitride; D005708:Gallium