Synthesis and characterization of TiOx nanowires using a novel silicon oxide support layer.
Titanium oxide (TiO(x)) nanowires of various compositions were synthesized using a vapour-liquid-solid growth process without the need of a titanium-based support layer. The process utilized liquid gold droplets, evaporated titanium vapours, and an argon-5% oxygen gas mixture at 1100 degrees C. A thin layer of thermally grown silicon oxide was used as the support layer. The resulting nanowires were 80-100 nm in diameter with lengths varying from 0.5 to 10 microm. Nanowires of TiO, as opposed to TiO(2), were formed in low pressures of argon-oxygen. Environmental pressure was found to greatly affect nanowire quality. Surface abrasion did not contribute to or inhibit the overall growth process. X-ray photon spectroscopy and Auger electron spectroscopy confirmed the presence of titanium. X-ray diffraction and transmission electron microscopy electron diffraction analysis confirmed the presence of rutile and face centred cubic crystal structures in both materials.
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada.
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