Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices.
Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from beta-Ga(2)O(3):Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga(2)O(3)/Eu(2)O(3) powders was used as precursor material and annealed under an argon flow. In the other one, undoped beta-Ga(2)O(3) nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu(3+) intraionic transitions from beta-Ga(2)O(3):Eu has been observed. Waveguiding of this red emitted light through the structures was shown.
Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid 28040, Spain. emilio.nogales@fis.ucm.es
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