A 100 nanometer scale resistive heater-thermometer on a silicon cantilever.
This paper reports a method for fabricating a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 microm, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 degrees C, and a heating time of 56 micros to reach 500 degrees C.
Dai
Z
Z
Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL 61801, USA.
King
W P
WP
Park
K
K
D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006361:Heating / Q000295:instrumentation*; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D036103:Nanotechnology / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013821:Thermometers
D012825:Silicon