A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K.
A II-VI wide-bandgap resonant cavity light-emitting diode is presented. The active region consists of CdSe quantum dots embedded in ZnSSe/MgS barriers, resulting in improved quantum efficiency at elevated temperatures. The resonant cavity is formed by a 14-period bottom distributed Bragg reflector and the semiconductor to air interface on top of the structure. Temperature dependent micro-electroluminescence measurements reveal emission of a single quantum dot up to 90 K. The turn-on voltages are 6 V at 4 K and 4 V at room temperature. These results are promising for the realization of green surface-emitting devices in general, and especially for an electrically driven prospective single photon source operating at room temperature.
Gust
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A
Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen, Germany. gust@uni-bremen.de
Kruse
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C
Otte
K
K
Kalden
J
J
Meeser
T
T
Sebald
K
K
Gutowski
J
J
Hommel
D
D