Ga-doped ZnO nanorod arrays grown by thermal evaporation and their electrical behavior.
Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt% Ga with respect to the Zn content showed minimum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. A p-n diode structure with Ga-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescence from the side view of the device, showing weak ultraviolet and various deep-level emissions.
Ahn
Cheol Hyoun
CH
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Korea.
Han
Won Suk
WS
Kong
Bo Hyun
BH
Cho
Hyung Koun
HK