Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature.
A circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET) are monitored by an electrometer in real time. Such a random behavior of single electrons is used for high-quality random-number generation suitable for data processing which stochastically extracts the most preferable pattern among various ones. MOSFET-based random-number generation allows fast operation as well as high controllability, which leads to flexible extraction of the preferable pattern.
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, Japan. knishi50@aecl.ntt.co.jp
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Nishiguchi
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Fujiwara