The creation of sub-10 nm In(PO3)3 nanocrystals in an insulating matrix, and underlying formation mechanisms.
Sub-10 nm In(PO(3))(3) nanocrystals (NCs) were created in an insulating matrix by rapid thermal annealing to form nanocomposite structures. On annealing at a temperature of 400 degrees C, P(2)O(5) NCs were formed by substituting P for Zn atoms in ZnO films via the kickout diffusion mechanism based on the fixed oxygen sublattice. On annealing at a higher temperature of 600 degrees C, however, In(PO(3))(3) NCs were nucleated by diffusion of In atoms from the substrate into the sites of P(2)O(5) NCs that coalesced by moving atoms to neighboring grains in the strain relaxed region. The formation mechanisms of sub-10 nm In(PO(3))(3) NCs in an insulating matrix due to rapid thermal annealing are described on the basis of the experimental results.
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea.
Jong Min
JM
Yuk
Tae Whan
TW
Kim
Jeong Yong
JY
Lee
Young Soo
YS
No
Dong Hun
DH
Kim
Won Kook
WK
Choi
Sungho
S
Jin
D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D010710:Phosphates / Q000737:chemistry*; D010720:Phosphines / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D010710:Phosphates; D010720:Phosphines; D007204:Indium; C090882:indium phosphide