The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition.
The structure and chemistry of the catalyst particles that terminate GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition were investigated using a combination of electron diffraction, high-resolution transmission electron microscopy, and x-ray energy dispersive spectrometry. The crystal symmetry, lattice parameter, and chemical composition obtained reveal that the catalyst particles are Ni(3)Ga with an ordered L 1(2) structure. The results suggest that the catalyst is a solid particle during growth and therefore favor a vapor-solid-solid mechanism for the growth of GaN nanowires under these conditions.
Weng
Xiaojun
X
Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA.
Burke
Robert A
RA
Redwing
Joan M
JM
D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D005740:Gases / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D009532:Nickel / Q000737:chemistry*; D009930:Organic Chemicals / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties
D005740:Gases; D046911:Macromolecular Substances; D009930:Organic Chemicals; C473348:gallium nitride; D009532:Nickel; D005708:Gallium