Label free CMOS DNA image sensor based on the charge transfer technique.
This paper describes a label free and fully electronic 32x32 CMOS DNA image sensor fabricated in a 1-poly 1-metal CMOS technology, suitable for inexpensive and highly integrated applications. The pixel operates using the charge transfer technique. DNA immobilization and hybridization on the silane-coated surface are detected, as well as variations in the silane coating. Significant output voltages of 76.4+/-16.5 mV and 64.5+/-15.7 mV were measured after immobilization and hybridization of DNA molecules containing 22 bases. From these results, the immobilized and hybridized DNA densities were estimated. These were 6.3+/-1.4x10(8) cm(-2) and 5.3+/-1.3x10(8) cm(-2), respectively. The DNA detection limit was calculated to be approximately 2.7x10(7) cm(-2) molecules (22 bases). Thanks to its potentiometric detectability, the DNA immobilization and hybridization was successfully verified.
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Japan. y.maruyama@tudelft.nl
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Maruyama
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Terao
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Sawada
D001483:Base Sequence; D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods*; D004247:DNA / Q000032:analysis* / Q000235:genetics; D004867:Equipment Design; D015345:Oligonucleotide Probes / Q000235:genetics; D012666:Semiconductors; D012821:Silanes
D015345:Oligonucleotide Probes; D012821:Silanes; D004247:DNA