Hysteresis-free carbon nanotube field effect transistors without any post-treatment.
Out of hundreds of as-fabricated back-gated carbon nanotube field effect transistors we made, five devices which exhibit indiscernible hysteresis are found. The cause of these hysteresis-free devices is investigated based on the energy band and interface trap theory, and it is attributed to the bundling effect of single-walled carbon nanotubes which will result in a reduced bandgap in the single-walled carbon nanotube bundle compared with an isolated semiconducting carbon nanotube. A specific requirement of the SWNT bundle to satisfy the presumed explanation is also proposed.
Department of Microelectronics, Peking University, Beijing 100871, China.
Chuan
C
Wang
Yunyi
Y
Fu
Ao
A
Guo
Jia
J
Liu
Lunhui
L
Guan
Zujin
Z
Shi
Zhennan
Z
Gu
Ru
R
Huang
Xing
X
Zhang