The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.
We have investigated the effect of excimer laser annealing on the chemical bonding, electrical, and optical properties of ZnO nanowires. We demonstrate that after laser annealing on the ZnO nanowire field effect transistors, the on-current increases and the threshold voltage shifts in the negative gate bias direction. These electrical results are attributed to the increase of oxygen vacancies as n-type dopants after laser annealing, consistent with the shifts towards higher binding energies of Zn 2p and O 1s in the x-ray photoelectron spectroscopy analysis of as-grown nanowires and laser-annealed ZnO nanowires.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
Jongsun
J
Maeng
Sungho
S
Heo
Gunho
G
Jo
Minhyeok
M
Choe
Seonghyun
S
Kim
Hyunsang
H
Hwang
Takhee
T
Lee
D004867:Equipment Design / Q000379:methods; D019544:Equipment Failure Analysis; D007834:Lasers; D008027:Light; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
D015034:Zinc Oxide