Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements.
We report on the structural and electrical characterization of individual Sn-doped In(2)O(3) nanowires. Key information on the nanowire's electron transport such as the carrier's mobility and density are presented. The mobility data was found to decrease as the temperature increases, providing direct evidence of the electron-phonon interaction as the dominant scattering mechanism in this oxide system. The results were confirmed by resistivity measurements and additionally the electron density could be directly calculated providing n = 5 x 10(24) cm(-3), confirming the samples' metallic character.
Berengue
Olivia M
OM
Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil. olimb@df.ufscar.br
Chiquito
Adenilson J
AJ
Pozzi
Livia P
LP
Lanfredi
Alexandre J C
AJ
Leite
Edson R
ER
D017097:Electric Impedance; D004563:Electrochemistry / Q000295:instrumentation*; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D017785:Photons; D012542:Scattering, Radiation; D013696:Temperature; D014001:Tin / Q000737:chemistry*; D014173:Transistors, Electronic
D007204:Indium; C047711:indium oxide; D014001:Tin