title: Doping induced anisotropic growth in C60.
abstract: Using density functional theory with generalized gradient approximation for exchange and correlation energy, we show that substitution of a Si atom at one of the C sites in C(60) not only allows C(59)Si to have a hydrophobic head with a hydrophilic tail but also the Si atom acts as a seed for anisotropic growth of the heterofullerene. This is demonstrated by interacting C(59)Si with N(7)Sc and B(8)Si. The resulting complex structures exhibit enhanced electric dipole moments and anisotropy. Thus, doping induced anisotropic growth of nanostructures provides a novel route for the synthesis of bifunctional particles with atomic-level control on selectivity and diversity. These particles may have important applications in biomedical, solar, and display industry.
authors.affiliation: Department of Advanced Materials and Nanotechnology and Center for Applied Physics and Technology, Peking University, Beijing 100871, China.
authors.forename: Miao Miao
authors.initials: MM
authors.lastname: Wu
authors.forename: Qiang
authors.initials: Q
authors.lastname: Sun
authors.forename: Qian
authors.initials: Q
authors.lastname: Wang
authors.forename: Puru
authors.initials: P
authors.lastname: Jena
authors.forename: Yoshiyuki
authors.initials: Y
authors.lastname: Kawazoe