title: Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
abstract: We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111)B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Pérot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Pérot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field.
authors.affiliation: Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. lyang@semi.ac.cn
authors.forename: Lin
authors.initials: L
authors.lastname: Yang
authors.forename: Junichi
authors.initials: J
authors.lastname: Motohisa
authors.forename: Takashi
authors.initials: T
authors.lastname: Fukui
authors.forename: Lian Xi
authors.initials: LX
authors.lastname: Jia
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.forename: Ming Min
authors.initials: MM
authors.lastname: Geng
authors.forename: Pin
authors.initials: P
authors.lastname: Chen
authors.forename: Yu Liang
authors.initials: YL
authors.lastname: Liu
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008163:Luminescent Measurements / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D017785:Photons; D012031:Refractometry / Q000379:methods*; D012542:Scattering, Radiation
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide