title: [Preparation and characterization of poly-Si films on different topography substrates by AIC].
abstract: Polycrystalline silicon (poly-Si) thin-films were made on planar and textured glass substrates by aluminum-induced crystallization (AIC) of in situ amorphous silicon (a-Si) deposited by DC-magnetron. The poly-Si films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). A narrow and symmetrical Ranman peak at the wave number of about 521 cm(-1) was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites in the authors' AIC poly-Si films were preferably (111) oriented. The measurement of full width at half maximum (FWHW) of (111) XRD peaks showed that the quality of the films was affected by the a-Si deposition temperature and the surface morphology of the glass substrates. It is likely that an a-Si deposition temperature of 200 degrees C seems to be ideal for the preparation of poly-Si films by AIC.
authors.affiliation: National Engineering Research Center for Technology and Equipment of Environmental Deposition, Lanzhou Jiaotong University, Lanzhou 730070, China. clwangee@163.com
authors.forename: Cheng-Long
authors.initials: CL
authors.lastname: Wang
authors.forename: Duo-Wang
authors.initials: DW
authors.lastname: Fan
authors.forename: Hong-Zhong
authors.initials: HZ
authors.lastname: Liu
authors.forename: Fu-Jia
authors.initials: FJ
authors.lastname: Zhang
authors.forename: Da
authors.initials: D
authors.lastname: Xing
authors.forename: Song-Hao
authors.initials: SH
authors.lastname: Liu