Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.
We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.
Logan
Andrew
A
Advanced Micro- /Nano-Devices Laboratory at the University of Waterloo, Waterloo, ON, Canada. aslogan@engmail.uwaterloo.ca
Yeow
John T W
JT
D025802:Electric Capacitance; D018625:Microscopy, Atomic Force; D055616:Microtechnology / Q000379:methods*; D017655:Silicon Compounds / Q000737:chemistry*; D017550:Spectroscopy, Fourier Transform Infrared; D014159:Transducers; D014463:Ultrasonography / Q000295:instrumentation*
D017655:Silicon Compounds; C032734:silicon nitride