title: Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting.
abstract: We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.
authors.forename: Hilmi
authors.initials: H
authors.lastname: Demir
authors.forename: Vijit
authors.initials: V
authors.lastname: Sabnis
authors.forename: Onur
authors.initials: O
authors.lastname: Fidaner
authors.forename: James
authors.initials: J
authors.lastname: Harris
authors.forename: David
authors.initials: D
authors.lastname: Miller
authors.forename: Jun-Fei
authors.initials: JF
authors.lastname: Zheng