title: Changes in DNA base sequences in the mutant of Arabidopsis thaliana induced by low-energy N(+) implantation.
abstract: To reveal the mutation effect of low-energy ion implantation on Ambidopsis thaliana in vivo, T80II, a stable dwarf mutant, derived from the seeds irradiated by 30 keV N(+) with the dose of 80 X 10(15) ions/cm(2) was used for Random Amplified Polymorphic DNA (RAPD) and base sequence analysis. The results indicated that among total 397 RAPD bands observed, 52 bands in T80II were different from those of wild type showing a variation frequency 13.1%. In comparison with the sequences of A. thaliana in GenBank, the RAPD fragments in T80II were changed greatly in base sequences with an average rate of one base change per 16.8 bases. The types of base changes included base transition, transversion, deletion and insertion. Among the 275 base changes detected, single base substitutions (97.09%) occurred more frequently than base deletions and insertions (2.91%). And the frequency of base transitions (66.55%) was higher than that of base transversions (30.55%). Adenine, thymine, guanine or cytosine could be replaced by any of other three bases in cloned DNA fragments in T80II. It seems that thymine was more sensitive to the irradiation than other bases. The flanking sequences of the base changes in RAPD fragments in T80II were analyzed and the mutational "hotspot" induced by low-energy ion implantation was discussed.
authors.affiliation: Institute of Botany, Chinese Academy of Sciences, Beijing, China.
authors.forename: Fengqi
authors.initials: F
authors.lastname: Chang
authors.forename: Xuanming
authors.initials: X
authors.lastname: Liu
authors.forename: Yinxin
authors.initials: Y
authors.lastname: Li
authors.forename: Gengxiang
authors.initials: G
authors.lastname: Jia
authors.forename: Jingjing
authors.initials: J
authors.lastname: Ma
authors.forename: Gongshe
authors.initials: G
authors.lastname: Liu
authors.forename: Zhiqing
authors.initials: Z
authors.lastname: Zhu