title: 1.3-microm optically-pumped semiconductor disk laser by wafer fusion.
abstract: We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jari.lyytikainen@tut.fi
authors.forename: Jari
authors.initials: J
authors.lastname: Lyytikäinen
authors.forename: Jussi
authors.initials: J
authors.lastname: Rautiainen
authors.forename: Lauri
authors.initials: L
authors.lastname: Toikkanen
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Alexandru
authors.initials: A
authors.lastname: Mereuta
authors.forename: Andrei
authors.initials: A
authors.lastname: Caliman
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D012031:Refractometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D018511:Systems Integration