title: Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires.
abstract: Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi(2) and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation.
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095-1595, USA. ycchou@ucla.edu
authors.forename: Yi-Chia
authors.initials: YC
authors.lastname: Chou
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
authors.forename: Lih-Juann
authors.initials: LJ
authors.lastname: Chen
authors.forename: King-Ning
authors.initials: KN
authors.lastname: Tu