The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing.
Zinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.
Chang
Yi-Kuei
YK
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China.
Hong
Franklin Chau-Nan
FC
D004566:Electrodes; D004586:Electrophoresis; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D053770:Nanowires; D013696:Temperature; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide