Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111)B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Pérot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Pérot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field.
Yang
Lin
L
Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. lyang@semi.ac.cn
Motohisa
Junichi
J
Fukui
Takashi
T
Jia
Lian Xi
LX
Zhang
Lei
L
Geng
Ming Min
MM
Chen
Pin
P
Liu
Yu Liang
YL
D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008163:Luminescent Measurements / Q000379:methods*; D036103:Nanotechnology / Q000379:methods*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure; D017785:Photons; D012031:Refractometry / Q000379:methods*; D012542:Scattering, Radiation
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide