title: Observation of stimulated Raman amplification in silicon waveguides.
abstract: We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides. Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in Silicon-on-Insulator (SOI) waveguides, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide. Two-Photon-Absorption (TPA) measurements on these waveguides are also reported, and found to be negligible at the pump power where SRS was observed.
authors.forename: R
authors.initials: R
authors.lastname: Claps
authors.forename: D
authors.initials: D
authors.lastname: Dimitropoulos
authors.forename: V
authors.initials: V
authors.lastname: Raghunathan
authors.forename: Y
authors.initials: Y
authors.lastname: Han
authors.forename: B
authors.initials: B
authors.lastname: Jalali