title: Anti-Stokes Raman conversion in silicon waveguides.
abstract: The first observation of parametric down-conversion in silicon is reported. Conversion from 1542.3nm to 1328.8nm is achieved using a CW pump laser at 1427 nm. The conversion occurs via Coherent Anti-Stokes Raman Scattering (CARS) in which two pump photons and one Stokes photon couple through a zone-center optical phonon to an anti-Stokes photon. The maximum measured Stokes/anti-Stokes power conversion efficiency is 1x10-5. The value depends on the effective pump power, the Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and waveguide dispersion. It is shown that the power conversion efficiency is a strong function of phase mismatch inside the waveguide.
authors.forename: R
authors.initials: R
authors.lastname: Claps
authors.forename: V
authors.initials: V
authors.lastname: Raghunathan
authors.forename: D
authors.initials: D
authors.lastname: Dimitropoulos
authors.forename: B
authors.initials: B
authors.lastname: Jalali