1.3-microm optically-pumped semiconductor disk laser by wafer fusion.
We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.
Lyytikäinen
Jari
J
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. jari.lyytikainen@tut.fi
Rautiainen
Jussi
J
Toikkanen
Lauri
L
Sirbu
Alexei
A
Mereuta
Alexandru
A
Caliman
Andrei
A
Kapon
Eli
E
Okhotnikov
Oleg G
OG
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D012031:Refractometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D018511:Systems Integration