title: Surface structure silicon based impact-ionization multiplier for optical detection.
abstract: This paper presents an innovative solid-state current amplifier based on impact ionization. The operation principle, fabrication, and test results for this device are reported. This amplifier was built on a silicon surface using standard microelectronics processes including ion implantation. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Current gains above 100 along with pre-amplified leakage currents of less than 10 nA were measured.
authors.forename: Hong-Wei
authors.initials: HW
authors.lastname: Lee
authors.forename: Joshua
authors.initials: J
authors.lastname: Beutler
authors.forename: Aaron
authors.initials: A
authors.lastname: Hawkins