title: High-efficiency continuous-wave Raman conversion with a BaWO(4) Raman crystal.
abstract: We report a high-efficiency cw Raman conversion with a BaWO(4) Raman crystal in a diode-end-pumped Nd:YVO(4) laser. The Raman threshold is as low as 3.6 W of diode power at 808 nm. The highest output power obtained at the 1,180 nm first-order Stokes line is 3.36 W under the diode power of 25.5 W, corresponding to a slope efficiency of 15.3% and a diode-to-Stokes optical conversion efficiency of 13.2%. The intracavity Raman conversion efficiency is 21.5% with respect to the available output of the 1,064 nm fundamental.
authors.affiliation: Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Li
authors.initials: L
authors.lastname: Fan
authors.forename: Ya-Xian
authors.initials: YX
authors.lastname: Fan
authors.forename: Yu-Qiang
authors.initials: YQ
authors.lastname: Li
authors.forename: Huaijin
authors.initials: H
authors.lastname: Zhang
authors.forename: Qin
authors.initials: Q
authors.lastname: Wang
authors.forename: Jin
authors.initials: J
authors.lastname: Wang
authors.forename: Hui-Tian
authors.initials: HT
authors.lastname: Wang
mesh_terms: D017609:Barium Compounds / Q000737:chemistry*; D004566:Electrodes; D007834:Lasers; D017973:Tungsten Compounds / Q000737:chemistry*; D015019:Yttrium / Q000737:chemistry
chemical_list: D017609:Barium Compounds; D017973:Tungsten Compounds; D015019:Yttrium; C045951:tungstate