Dielectric screening enhanced performance in graphene FET.
We have studied the transport properties of graphene transistors in different solvents with dielectric constant varying over 2 orders of magnitude. Upon increasing the dielectric constant, the carrier mobility increases up to 3 orders of magnitude and reaches approximately 7 x 10(4) cm(2)/v.s at the dielectric constant of approximately 47. This mobility value changes little in higher dielectric constant solvents, which indicates that we are approaching the intrinsic limit of room temperature mobility in graphene supported on SiO(2) substrates. The results are discussed in terms of long-range Coulomb scattering originated from the charged impurities underneath graphene.
Chen
Fang
F
Center for Bioelectronics and Biosensors, Biodesign Institute, Arizona State University, Tempe, Arizona 85287, USA.
Xia
Jilin
J
Ferry
David K
DK
Tao
Nongjian
N
D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D012997:Solvents / Q000737:chemistry; D014173:Transistors, Electronic
D012997:Solvents; D012822:Silicon Dioxide; D006108:Graphite