title: InAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide.
abstract: We have observed laser action from optically-pumped InAs-quantum-dots embedded in a line-defect waveguide in an air-bridge type GaAs-photonic-crystal slab (an array of air-holes). The lasing is found to occur without any optical cavity such as a set of Fabry-Perot mirrors. Comparison of the observed transmittance spectrum with the calculated band dispersion of the W3 defect-mode enables us to specify the lasing wavelength as that at the band edge. From this fact it follows that distributed feedback mechanism at the band edge with a vanishingly small group-velocity should be responsible for the present lasing. Usefulness of this kind of compact laser in a future ultrafast planar photonic integrated circuit is discussed.
authors.forename: Kuon
authors.initials: K
authors.lastname: Inoue
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Sasaki
authors.forename: Koji
authors.initials: K
authors.lastname: Ishida
authors.forename: Yoshimasa
authors.initials: Y
authors.lastname: Sugimoto
authors.forename: Naoki
authors.initials: N
authors.lastname: Ikeda
authors.forename: Yu
authors.initials: Y
authors.lastname: Tanaka
authors.forename: Shunsuke
authors.initials: S
authors.lastname: Ohkouchi
authors.forename: Yusui
authors.initials: Y
authors.lastname: Nakamura
authors.forename: Kiyoshi
authors.initials: K
authors.lastname: Asakawa