Self-sorted nanotube networks on polymer dielectrics for low-voltage thin-film transistors.
Recent exploitations of the superior mechanical and electronic properties of carbon nanotubes (CNTs) have led to exciting opportunities in low-cost, high performance, carbon-based electronics. In this report, low-voltage thin-film transistors with aligned, semiconducting CNT networks are fabricated on a chemically modified polymer gate dielectric using both rigid and flexible substrates. The multifunctional polymer serves as a thin, flexible gate dielectric film, affords low operating voltages, and provides a platform for chemical functionalization. The introduction of amine functionality to the dielectric surface leads to the adsorption of a network enriched with semiconducting CNTs with tunable density from spin coating a bulk solution of unsorted CNTs. The composition of the deposited CNT networks is verified with Raman spectroscopy and electrical characterization. For transistors at operating biases below 1 V, we observe an effective device mobility as high as 13.4 cm(2)/Vs, a subthreshold swing as low as 130 mV/dec, and typical on-off ratios of greater than 1,000. This demonstration of high performance CNT thin-film transistors operating at voltages below 1 V and deposited using solution methods on polymeric and flexible substrates is an important step toward the realization of low-cost flexible electronics.
Roberts
Mark E
ME
Department of Chemical Engineering, Stanford University, Stauffer III, 381 North-South Mall, Stanford, California 94305-5025, USA.
LeMieux
Melburne C
MC
Sokolov
Anatoliy N
AN
Bao
Zhenan
Z
D004560:Electricity; D004581:Electronics; D015394:Molecular Structure; D037742:Nanotubes, Carbon / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D037742:Nanotubes, Carbon; D011108:Polymers