title: A sub-micron depletion-type photonic modulator in Silicon On Insulator.
abstract: We provide detailed analysis of a four terminal p+pnn+ optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide. The proposed depletion device has been designed to approach birefringence free operation. The modulation mechanism is the carrier depletion effect in a pn junction; carrier losses induced are minimised in our design and because we use a depletion device, the device is insensitive to carrier lifetime. The rise time and fall time of the proposed device have both been calculated to be 7 ps for a reverse bias of only 5 volts. A maximum excess loss of 2 dB is predicted for TE and TM due to the presence of p type and n type carriers in the waveguide.
authors.forename: F
authors.initials: F
authors.lastname: Gardes
authors.forename: G
authors.initials: G
authors.lastname: Reed
authors.forename: N
authors.initials: N
authors.lastname: Emerson
authors.forename: C
authors.initials: C
authors.lastname: Png