Electrical conduction of CdSe nanocrystals embedded in silicon oxide films.
In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 nm, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.
Levichev
S
S
Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
Mamor
M
M
Rolo
A G
AG
Pinto
S R C
SR
Khodorov
A
A
Gomes
M J M
MJ