High-efficiency continuous-wave Raman conversion with a BaWO(4) Raman crystal.
We report a high-efficiency cw Raman conversion with a BaWO(4) Raman crystal in a diode-end-pumped Nd:YVO(4) laser. The Raman threshold is as low as 3.6 W of diode power at 808 nm. The highest output power obtained at the 1,180 nm first-order Stokes line is 3.36 W under the diode power of 25.5 W, corresponding to a slope efficiency of 15.3% and a diode-to-Stokes optical conversion efficiency of 13.2%. The intracavity Raman conversion efficiency is 21.5% with respect to the available output of the 1,064 nm fundamental.
Fan
Li
L
Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China.
Fan
Ya-Xian
YX
Li
Yu-Qiang
YQ
Zhang
Huaijin
H
Wang
Qin
Q
Wang
Jin
J
Wang
Hui-Tian
HT
D017609:Barium Compounds / Q000737:chemistry*; D004566:Electrodes; D007834:Lasers; D017973:Tungsten Compounds / Q000737:chemistry*; D015019:Yttrium / Q000737:chemistry
D017609:Barium Compounds; D017973:Tungsten Compounds; D015019:Yttrium; C045951:tungstate