title: Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits.
abstract: The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Joost
authors.initials: J
authors.lastname: Brouckaert
authors.forename: Dirk
authors.initials: D
authors.lastname: Taillaert
authors.forename: Pieter
authors.initials: P
authors.lastname: Dumon
authors.forename: Wim
authors.initials: W
authors.lastname: Bogaerts
authors.forename: Dries
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Richard
authors.initials: R
authors.lastname: Nötzel
authors.forename: Meint
authors.initials: M
authors.lastname: Smit