Single crystalline film on glass for thin film solar cells.
A simple Ge-on-glass metal-oxide-semiconductor solar cell has been demonstrated by wafer bonding and smart-cut. Since single crystalline Ge is directly bonded on glass, the crystalline substrate is not necessary. The metal-oxide-semiconductor structure can be easily fabricated without n and p dopant diffusion or implantation. The reason for low efficiency is discussed, and then the optimized structures are designed by simulation. An outstanding enhancement on efficiency can be achieved with the Si/Ge/Si structure. The best performance can be achieved by optimization of the position of the Ge layer, the thickness of the Ge layer, and the number of the Ge layers. The efficiency of the thin film Si/Ge/Si solar cell with single layer of 30-nm-thick Ge outside the depletion region reaches 15.9%, as compared to the control Si sample of 11.8%. Based on the simulation and technologies, high efficiency thin film solar cells can be demonstrated in the future.
Lin
C H
CH
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, R.O.C.
Yang
Y J
YJ
Encinas
E
E
Chen
W Y
WY
Tsai
J J
JJ
Liu
C W
CW