Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits.
The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI.
Roelkens
Gunther
G
Brouckaert
Joost
J
Taillaert
Dirk
D
Dumon
Pieter
P
Bogaerts
Wim
W
Van Thourhout
Dries
D
Baets
Roel
R
Nötzel
Richard
R
Smit
Meint
M