title: Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering.
abstract: We observe for the first time net optical gain in a low loss silicon waveguide in silicon-on-insulator (SOI) based on stimulated Raman scattering with a pulsed pump laser at 1.545 microm. We show that pulsed pumping with a pulse width narrower than the carrier recombination lifetime in SOI significantly reduces the free carrier generation rate due to two-photon absorption (TPA) in silicon. For a 4.8 cm long waveguide with an effective core area of ~1.57 microm2, we obtained a net gain of 2 dB with a pump pulse width of ~17 ns and a peak pump power of ~470 mW inside the waveguide.
authors.forename: Ansheng
authors.initials: A
authors.lastname: Liu
authors.forename: Haisheng
authors.initials: H
authors.lastname: Rong
authors.forename: Mario
authors.initials: M
authors.lastname: Paniccia
authors.forename: Oded
authors.initials: O
authors.lastname: Cohen
authors.forename: Dani
authors.initials: D
authors.lastname: Hak