title: Tuning between mixing and reactivity in the Ge-Sn system using pressure and temperature.
abstract: No bulk GeSn crystal existed prior to this work. Near 10 GPa the two elements resemble each other both electronically and structurally. Synthesis experiments at 10 GPa and 1500 K followed by annealing at 770 K using Ge and Sn starting materials and ex-situ analysis using transmission electron microscopy, scanning electron microscopy, and X-ray diffraction document the recovery of a Ge(0.9)Sn(0.1) solid solution (space group P4(3)2(1)2, a = 6.014 (1) A, c = 7.057 (1) A, Z = 12).
authors.affiliation: School of Engineering and Centre for Materials Science, University of Edinburgh, Mayfield Road EH9 3JL UK.
authors.forename: Christophe
authors.initials: C
authors.lastname: Guillaume
authors.forename: George
authors.initials: G
authors.lastname: Serghiou
authors.forename: Andrew
authors.initials: A
authors.lastname: Thomson
authors.forename: Jean-Paul
authors.initials: JP
authors.lastname: Morniroli
authors.forename: Dan J
authors.initials: DJ
authors.lastname: Frost
authors.forename: Nicholas
authors.initials: N
authors.lastname: Odling
authors.forename: Mohamed
authors.initials: M
authors.lastname: Mezouar