Analysis of position-dependent light extraction of GaN-based LEDs.
The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.
Lee
Tsung-Xian
TX
Lin
Chao-Ying
CY
Ma
Shih-Hsin
SH
Sun
Ching-Cherng
CC