title: Intensity-tunable group delay using stimulated Raman scattering in silicon slow-light waveguides.
abstract: We show that stimulated Raman scattering is a sufficiently strong effect in silicon waveguides to allow the intensity of a pump input to control the group delay of a weak Stokes-shifted signal. While the fractional change in group delay is minimal in a straight waveguide, microresonator enhancement can produce a fractional increase of 50% with respect to the linear group delay of the resonator.
authors.forename: S
authors.initials: S
authors.lastname: Blair
authors.forename: K
authors.initials: K
authors.lastname: Zheng