title: Mechanism for stripe pattern formation on hydrophilic surfaces by using convective self-assembly.
abstract: We have studied the formation of stripe patterned films of ordered particle arrays on completely solvophilic substrates by using a self-organization technique. In this method, a substrate immersed in a suspension is withdrawn vertically at a controlled temperature. We have also systematically examined the effects of several experimental parameters. Well-defined stripes spontaneously form at the air-solvent-substrate contact line because of a very dilute suspension in a quasi-static process. The stripe width depends on particle concentration, withdrawal rate, and surface tension, while the stripe spacing depends on the thickness of stripes, surface tension, and type of substrate. A stripe width and the adjacent spacing show a clear correlation, strongly indicating the synchronized formation of a stripe and the next spacing. The evaporation rate does not affect stripe width and spacing but determines the growth rate of stripe patterned films. Based on these results, we propose a new mechanism for stripe formation, which is neither a stick-slip motion of the contact line nor dewetting but a negative feedback of particle concentration caused by a concavely curved shape of the meniscus, demonstrating not only its qualitative but also its quantitative validity.
authors.affiliation: Department of Chemical Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan.
authors.forename: Satoshi
authors.initials: S
authors.lastname: Watanabe
authors.forename: Koji
authors.initials: K
authors.lastname: Inukai
authors.forename: Shunsuke
authors.initials: S
authors.lastname: Mizuta
authors.forename: Minoru T
authors.initials: MT
authors.lastname: Miyahara
mesh_terms: D008855:Microscopy, Electron, Scanning; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties; D014867:Water / Q000737:chemistry*
chemical_list: D014867:Water; D012822:Silicon Dioxide