title: Influence of nonlinear absorption on Raman amplification in Silicon waveguides.
abstract: We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.
authors.forename: Ricardo
authors.initials: R
authors.lastname: Claps
authors.forename: V
authors.initials: V
authors.lastname: Raghunathan
authors.forename: D
authors.initials: D
authors.lastname: Dimitropoulos
authors.forename: B
authors.initials: B
authors.lastname: Jalali