Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers.
Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transversemode operation is observed with a large margin of allowance in the etch depth (t = 2.5 +/- 0.6 microm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etchdepth dependent modal losses.
Baek
Jong-Hwa
JH
Song
Dae-Sung
DS
Hwang
In-Kag
IK
Lee
Hum-Hee
HH
Lee
Y
Y
Ju
Young-Gu
YG
Kondo
Takashi
T
Miyamoto
Tomoyuki
T
Koyama
Fumio
F