title: Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguides.
abstract: We show time-resolved measurement of Raman gain in Silicon submicron-size planar waveguide using picosecond pump and probe pulses. A net nonlinear gain of 6 dB is obtained in a 7-mm long waveguide with 20.7-W peak pump power. We demonstrate an ultrafast all-optical switch based on the free-carrier dispersion effect in the silicon waveguide, whose transmission is enhanced by more than 13 dB due to the Raman effect.
authors.forename: Qianfan
authors.initials: Q
authors.lastname: Xu
authors.forename: Vilson
authors.initials: V
authors.lastname: Almeida
authors.forename: Michal
authors.initials: M
authors.lastname: Lipson