title: Photomixing at 1.55 microm in ion-irradiated In(0.53)Ga(0.47)As on InP.
abstract: We report the first demonstration of a terahertz photomixer made of ion-irradiated In(0.53)Ga(0.47)As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 microm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.
authors.forename: N
authors.initials: N
authors.lastname: Chimot
authors.forename: J
authors.initials: J
authors.lastname: Mangeney
authors.forename: P
authors.initials: P
authors.lastname: Crozat
authors.forename: J
authors.initials: J
authors.lastname: Lourtioz
authors.forename: K
authors.initials: K
authors.lastname: Blary
authors.forename: J
authors.initials: J
authors.lastname: Lampin
authors.forename: G
authors.initials: G
authors.lastname: Mouret
authors.forename: D
authors.initials: D
authors.lastname: Bigourd
authors.forename: E
authors.initials: E
authors.lastname: Fertein