title: Raman amplification and lasing in SiGe waveguides.
abstract: We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si1-xGex waveguide with x=7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spectral shift can be attributed to the combination of composition- and strain-induced shift in the optical phonon frequency. The prospect of Germanium-Silicon-on-Oxide as a flexible Raman medium is discussed.
authors.forename: Ricardo
authors.initials: R
authors.lastname: Claps
authors.forename: Varun
authors.initials: V
authors.lastname: Raghunathan
authors.forename: Ozdal
authors.initials: O
authors.lastname: Boyraz
authors.forename: Prakash
authors.initials: P
authors.lastname: Koonath
authors.forename: Dimitrios
authors.initials: D
authors.lastname: Dimitropoulos
authors.forename: Bahram
authors.initials: B
authors.lastname: Jalali