Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes.
Ultrathin silicon-on-insulator, composed of a crystalline sheet of silicon bounded by native oxide and a buried oxide layer, is extremely resistive because of charge trapping at the interfaces between the sheet of silicon and the oxide. After chemical modification of the top surface with hydrofluoric acid (HF), the sheet resistance drops to values below what is expected based on bulk doping alone. We explain this behavior in terms of surface-induced band structure changes combined with the effective isolation from bulk properties created by crystal thinness.
Scott
Shelley A
SA
University of Wisconsin-Madison, Madison, Wisconsin 53706.
Peng
Weina
W
Kiefer
Arnold M
AM
Jiang
Hongquan
H
Knezevic
Irena
I
Savage
Donald E
DE
Eriksson
Mark A
MA
Lagally
Max G
MG