title: Electrical conduction of CdSe nanocrystals embedded in silicon oxide films.
abstract: In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 nm, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.
authors.affiliation: Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
authors.forename: S
authors.initials: S
authors.lastname: Levichev
authors.forename: M
authors.initials: M
authors.lastname: Mamor
authors.forename: A G
authors.initials: AG
authors.lastname: Rolo
authors.forename: S R C
authors.initials: SR
authors.lastname: Pinto
authors.forename: A
authors.initials: A
authors.lastname: Khodorov
authors.forename: M J M
authors.initials: MJ
authors.lastname: Gomes