Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length.
In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics.
Wang
Y J
YJ
Xu
S J
SJ
Zhao
D G
DG
Zhu
J J
JJ
Yang
H
H
Shan
X D
XD
Yu
D P
DP