title: Tunable slow light device using quantum dot semiconductor laser.
abstract: This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mum fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.
authors.forename: P C
authors.initials: PC
authors.lastname: Peng
authors.forename: C T
authors.initials: CT
authors.lastname: Lin
authors.forename: H C
authors.initials: HC
authors.lastname: Kuo
authors.forename: W K
authors.initials: WK
authors.lastname: Tsai
authors.forename: J N
authors.initials: JN
authors.lastname: Liu
authors.forename: S
authors.initials: S
authors.lastname: Chi
authors.forename: S C
authors.initials: SC
authors.lastname: Wang
authors.forename: G
authors.initials: G
authors.lastname: Lin
authors.forename: H P
authors.initials: HP
authors.lastname: Yang
authors.forename: K F
authors.initials: KF
authors.lastname: Lin
authors.forename: J Y
authors.initials: JY
authors.lastname: Chi