title: Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform.
abstract: We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO(2)(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.
authors.forename: Jifeng
authors.initials: J
authors.lastname: Liu
authors.forename: Dong
authors.initials: D
authors.lastname: Pan
authors.forename: Samerkhae
authors.initials: S
authors.lastname: Jongthammanurak
authors.forename: Kazumi
authors.initials: K
authors.lastname: Wada
authors.forename: Lionel C
authors.initials: LC
authors.lastname: Kimerling
authors.forename: Jurgen
authors.initials: J
authors.lastname: Michel