A polarizer chip based on CMOS Cu-interconnect for optical telecommunications.
The construction by CMOS Cu-interconnect fabrication technology of an optical chip that performs the function of linear polarization is described. The chip consists of three rows of a one dimensional array of rods in a square lattice structure. The rods make use of the Cu-interconnects of a CMOS IC for this optical purpose. The whole structure embedded inside a slab waveguide. The optical properties of the device in the optical communication wavelength range (1.475 microm ~ 1.625 microm) are simulated using the finite-difference-time-domain (FDTD) approach. Under double-cascaded operation, a linear polarization ratio as high as 10(6) can be achieved. Our study shows that the CMOS IC technology can be used a tool for mass fabrication of passive integrated optical chips for optical communications.
Ko
Cheng-Hao
CH
Lee
Kuei-Jen
KJ