title: Feedback induced instabilities in a quantum dot semiconductor laser.
abstract: We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop--outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers -- quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe.
authors.forename: Olwen
authors.initials: O
authors.lastname: Carroll
authors.forename: Ian
authors.initials: I
authors.lastname: O'Driscoll
authors.forename: Stephen P
authors.initials: SP
authors.lastname: Hegarty
authors.forename: Guillaume
authors.initials: G
authors.lastname: Huyet
authors.forename: John
authors.initials: J
authors.lastname: Houlihan
authors.forename: Evgeny A
authors.initials: EA
authors.lastname: Viktorov
authors.forename: Paul
authors.initials: P
authors.lastname: Mandel