All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier.
An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.
Guo
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Connelly
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