Terahertz response of GaN thin films.
The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model. Using the Kohlrausch model fit not only provides the mobility of the free carriers in the GaN film, but also estimates the relaxation time distribution function and average relaxation time.
Tsai
Tsong-Ru
TR
Chen
Shi-Jie
SJ
Chang
Chih-Fu
CF
Hsu
Sheng-Hsien
SH
Lin
Tai-Yuan
TY
Chi
Cheng-Chung
CC