title: High contrast reflection modulation near 1.55mum in InP 2D photonic crystals on silicon wafer.
abstract: We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.
authors.forename: Gabriele
authors.initials: G
authors.lastname: Vecchi
authors.forename: Fabrice
authors.initials: F
authors.lastname: Raineri
authors.forename: Isabelle
authors.initials: I
authors.lastname: Sagnes
authors.forename: Ko-Hsin
authors.initials: KH
authors.lastname: Lee
authors.forename: Stéphane
authors.initials: S
authors.lastname: Guilet
authors.forename: Luc
authors.initials: L
authors.lastname: Le Gratiet
authors.forename: Anne
authors.initials: A
authors.lastname: Talneau
authors.forename: Ariel
authors.initials: A
authors.lastname: Levenson
authors.forename: Rama
authors.initials: R
authors.lastname: Raj
authors.forename: Frederik
authors.initials: F
authors.lastname: Van Laere
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens
authors.forename: Dries
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: Roel
authors.initials: R
authors.lastname: Baets