title: Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction.
abstract: A new approach for the fabrication of n-type porous silicon layer is proposed. A hole-rich p-layer is arranged underneath the n-layer, and the np-junction is under forward biased condition in the etching process. Therefore sufficient holes can drift straight-upward and pass across the np-junction from p-region to n-region to participate in electrochemical reaction during the etching process with an unfailing supply. Illumination is an optional hole-supplier in this approach, so the problem of illumination-depth limitation can be overcome. Strong visible photoluminescence emissions are demonstrated on the hole-poor n-type porous layer at about 650 nm.
authors.forename: Jia-Chuan
authors.initials: JC
authors.lastname: Lin
authors.forename: Wei-Lun
authors.initials: WL
authors.lastname: Chen
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Tsai