Ordered stacking fault arrays in silicon nanowires.
Correlated Raman microscopy and transmission electron microscopy were used to study the ordering of {111} planar defects in individual silicon nanowires. Detailed electron diffraction and polarization-dependent Raman analysis of individual nanowires enabled assessments of the stacking fault distribution, which varied from random to periodic, with the latter giving rise to local domains of 2H and 9R polytypes rather than the 3C diamond cubic structure. Some controversies and inconsistencies concerning earlier reports of polytypes in Si nanowires were resolved.
Lopez
Francisco J
FJ
Department of Materials Science and Engineering, Northwestern University,Evanston, Illinois 60208, USA.
Hemesath
Eric R
ER
Lauhon
Lincoln J
LJ
D002384:Catalysis; D006046:Gold / Q000737:chemistry; D046228:Microarray Analysis; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013059:Spectrum Analysis, Raman
D006046:Gold; D012825:Silicon