title: Optical modulation by carrier depletion in a silicon PIN diode.
abstract: Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.1 V.cm has been obtained at 1.55mum. Numerical simulations show a good agreement between experimental and theoretical index variations.
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: Xavier
authors.initials: X
authors.lastname: Le Roux
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan
authors.forename: Daniel
authors.initials: D
authors.lastname: Pascal
authors.forename: Mathieu
authors.initials: M
authors.lastname: Halbwax
authors.forename: Sylvain
authors.initials: S
authors.lastname: Maine
authors.forename: Suzanne
authors.initials: S
authors.lastname: Laval
authors.forename: Jean Marc
authors.initials: JM
authors.lastname: Fédéli
authors.forename: Jean François
authors.initials: JF
authors.lastname: Damlencourt