Long-term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons.
Pulsed optical excitation of the negatively charged trion has been used to generate electron spin coherence in an n-doped (In,Ga)As/GaAs quantum well. The coherence is monitored by resonant spin amplification detected at times exceeding the trion lifetime by 2 orders of magnitude. Still, even then signatures of the hole spin dynamics in the trion complex are imprinted in the signal leading to an unusual batlike shape of the magnetic field dispersion of spin amplification. From this shape information about the spin relaxation of both electrons and holes can be derived.
Yugova
I A
IA
Experimentelle Physik II, Technische Universität Dortmund, D-44221 Dortmund, Germany.
Sokolova
A A
AA
Yakovlev
D R
DR
Greilich
A
A
Reuter
D
D
Wieck
A D
AD
Bayer
M
M