title: Organic semiconductor distributed feedback laser fabricated by direct laser interference ablation.
abstract: We use a pulsed, frequency tripled picosecond Nd:YAG laser for holographic ablation to pattern a surface relief grating into an organic semiconductor guest-host system. The resulting second order distributed feedback lasers exhibit laser action with laser thresholds being comparable to those obtained with resonators structured by standard lithographic techniques. The details of the interference ablation of tris-(8-hydroxyquinoline) aluminum (Alq(3)) doped with the laser dye 4- dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) are presented and discussed. Lasing action is demonstrated at a wavelength of 646.6 nm, exploiting second order Bragg reflection in a relief grating with a period of 399 nm.
authors.forename: Marc
authors.initials: M
authors.lastname: Stroisch
authors.forename: Thomas
authors.initials: T
authors.lastname: Woggon
authors.forename: Uli
authors.initials: U
authors.lastname: Lemmer
authors.forename: Georg
authors.initials: G
authors.lastname: Bastian
authors.forename: Georg
authors.initials: G
authors.lastname: Violakis
authors.forename: Stavros
authors.initials: S
authors.lastname: Pissadakis