title: Picosecond electron transfer from photosynthetic reaction center protein to GaAs.
abstract: An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.
authors.affiliation: Department of Biochemistry, Tel Aviv University, Tel Aviv 69978, Israel.
authors.forename: Lior
authors.initials: L
authors.lastname: Sepunaru
authors.forename: Irena
authors.initials: I
authors.lastname: Tsimberov
authors.forename: Ludmila
authors.initials: L
authors.lastname: Forolov
authors.forename: Chanoch
authors.initials: C
authors.lastname: Carmeli
authors.forename: Itai
authors.initials: I
authors.lastname: Carmeli
authors.forename: Yossi
authors.initials: Y
authors.lastname: Rosenwaks
mesh_terms: D001151:Arsenic / Q000737:chemistry* / Q000378:metabolism; D004579:Electron Transport; D005708:Gallium / Q000737:chemistry* / Q000378:metabolism; D008958:Models, Molecular; D045331:Photosystem I Protein Complex / Q000737:chemistry* / Q000378:metabolism
chemical_list: D045331:Photosystem I Protein Complex; D005708:Gallium; D001151:Arsenic