title: Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs.
abstract: A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.
authors.forename: P
authors.initials: P
authors.lastname: Rojo Romeo
authors.forename: J
authors.initials: J
authors.lastname: Van Campenhout
authors.forename: P
authors.initials: P
authors.lastname: Regreny
authors.forename: A
authors.initials: A
authors.lastname: Kazmierczak
authors.forename: C
authors.initials: C
authors.lastname: Seassal
authors.forename: X
authors.initials: X
authors.lastname: Letartre
authors.forename: G
authors.initials: G
authors.lastname: Hollinger
authors.forename: D
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: R
authors.initials: R
authors.lastname: Baets
authors.forename: J M
authors.initials: JM
authors.lastname: Fedeli
authors.forename: L
authors.initials: L
authors.lastname: Di Cioccio