title: Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length.
abstract: In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics.
authors.forename: Y J
authors.initials: YJ
authors.lastname: Wang
authors.forename: S J
authors.initials: SJ
authors.lastname: Xu
authors.forename: D G
authors.initials: DG
authors.lastname: Zhao
authors.forename: J J
authors.initials: JJ
authors.lastname: Zhu
authors.forename: H
authors.initials: H
authors.lastname: Yang
authors.forename: X D
authors.initials: XD
authors.lastname: Shan
authors.forename: D P
authors.initials: DP
authors.lastname: Yu