High contrast reflection modulation near 1.55mum in InP 2D photonic crystals on silicon wafer.
We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.
Vecchi
Gabriele
G
Raineri
Fabrice
F
Sagnes
Isabelle
I
Lee
Ko-Hsin
KH
Guilet
Stéphane
S
Le Gratiet
Luc
L
Talneau
Anne
A
Levenson
Ariel
A
Raj
Rama
R
Van Laere
Frederik
F
Roelkens
Gunther
G
Van Thourhout
Dries
D
Baets
Roel
R