Picosecond electron transfer from photosynthetic reaction center protein to GaAs.
An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 following the PS I self-assembly. We attribute this to picosecond electron transfer from the PS I to the n-GaAs surface states.
Sepunaru
Lior
L
Department of Biochemistry, Tel Aviv University, Tel Aviv 69978, Israel.
Tsimberov
Irena
I
Forolov
Ludmila
L
Carmeli
Chanoch
C
Carmeli
Itai
I
Rosenwaks
Yossi
Y
D001151:Arsenic / Q000737:chemistry* / Q000378:metabolism; D004579:Electron Transport; D005708:Gallium / Q000737:chemistry* / Q000378:metabolism; D008958:Models, Molecular; D045331:Photosystem I Protein Complex / Q000737:chemistry* / Q000378:metabolism
D045331:Photosystem I Protein Complex; D005708:Gallium; D001151:Arsenic