title: Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs.
abstract: We demonstrate the optical heterodyne diagnostics and high saturation power characteristics of a novel undoped InP sandwiched In(0.53)Ga(0.47)As p-i-n photodiode with a partially p-doped photoabsorption layer, which is grown on a linearly graded metamorphic In(x)Ga(1-x)P buffered GaAs substrate layer and exhibits an excellent low dark current density of 3.6x10(-7) A/cm(2). Such a top-illuminated optical receiver exhibits an illuminating window of 60-mum diameter, which performs ultra-linear power handling capability up to 18 dBm at 1550 nm, providing a maximum photocurrent of 35 mA under a reverse bias of 9 volts. These result in extremely high current bandwidth and bandwidth-responsivity products of 350 mA*GHz and 4.8 GHz*A/W, respectively, at receiving frequency of up to 10 GHz.
authors.forename: Yu-Sheng
authors.initials: YS
authors.lastname: Liao
authors.forename: Jin-Wei
authors.initials: JW
authors.lastname: Shi
authors.forename: Y-S
authors.initials: YS
authors.lastname: Wu
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: M
authors.initials: M
authors.lastname: Feng
authors.forename: Gong-Ru
authors.initials: GR
authors.lastname: Lin