Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs.
A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.
Rojo Romeo
P
P
Van Campenhout
J
J
Regreny
P
P
Kazmierczak
A
A
Seassal
C
C
Letartre
X
X
Hollinger
G
G
Van Thourhout
D
D
Baets
R
R
Fedeli
J M
JM
Di Cioccio
L
L