title: Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous "2.5 D" Photonic Crystal.
abstract: The authors report on the design, fabrication and operation of heterogeneous and compact "2.5 D" Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO(2) bonding layer, and a bottom high index contrast Si/SiO(2) Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5 microm, was achieved by photopumping. A low effective threshold, on the order of 350 microW, and a spontaneous emission factor, over 0.13, could be deduced from experiments.
authors.forename: Badhise
authors.initials: B
authors.lastname: Ben Bakir
authors.forename: Christian
authors.initials: C
authors.lastname: Seassal
authors.forename: Xavier
authors.initials: X
authors.lastname: Letartre
authors.forename: Philippe
authors.initials: P
authors.lastname: Regreny
authors.forename: Michel
authors.initials: M
authors.lastname: Gendry
authors.forename: Pierre
authors.initials: P
authors.lastname: Viktorovitch
authors.forename: Marc
authors.initials: M
authors.lastname: Zussy
authors.forename: Léa
authors.initials: L
authors.lastname: Di Cioccio
authors.forename: Jean-Marc
authors.initials: JM
authors.lastname: Fedeli