Optical modulation by carrier depletion in a silicon PIN diode.
Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.1 V.cm has been obtained at 1.55mum. Numerical simulations show a good agreement between experimental and theoretical index variations.
Marris-Morini
Delphine
D
Le Roux
Xavier
X
Vivien
Laurent
L
Cassan
Eric
E
Pascal
Daniel
D
Halbwax
Mathieu
M
Maine
Sylvain
S
Laval
Suzanne
S
Fédéli
Jean Marc
JM
Damlencourt
Jean François
JF