title: Electrically pumped hybrid AlGaInAs-silicon evanescent laser.
abstract: An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
authors.forename: Alexander W
authors.initials: AW
authors.lastname: Fang
authors.forename: Hyundai
authors.initials: H
authors.lastname: Park
authors.forename: Oded
authors.initials: O
authors.lastname: Cohen
authors.forename: Richard
authors.initials: R
authors.lastname: Jones
authors.forename: Mario J
authors.initials: MJ
authors.lastname: Paniccia
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers