title: Diode-pumped Yb:GSO femtosecond laser.
abstract: Compact femtosecond laser operation of Yb:Gd(2)SiO(5) (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb:GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1~100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW.
authors.forename: Wenxue
authors.initials: W
authors.lastname: Li
authors.forename: Qiang
authors.initials: Q
authors.lastname: Hao
authors.forename: Hui
authors.initials: H
authors.lastname: Zhai
authors.forename: Heping
authors.initials: H
authors.lastname: Zeng
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.forename: Guangjun
authors.initials: G
authors.lastname: Zhao
authors.forename: Lihe
authors.initials: L
authors.lastname: Zheng
authors.forename: Liangbi
authors.initials: L
authors.lastname: Su
authors.forename: Jun
authors.initials: J
authors.lastname: Xu