title: High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.
abstract: We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.
authors.forename: Antti
authors.initials: A
authors.lastname: Härkönen
authors.forename: Jussi
authors.initials: J
authors.lastname: Rautiainen
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina
authors.forename: Janne
authors.initials: J
authors.lastname: Konttinen
authors.forename: Pietari
authors.initials: P
authors.lastname: Tuomisto
authors.forename: Lasse
authors.initials: L
authors.lastname: Orsila
authors.forename: Markus
authors.initials: M
authors.lastname: Pessa
authors.forename: Oleg G
authors.initials: OG
authors.lastname: Okhotnikov