title: Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes.
abstract: We synthesize and analyze Ag-doped ZnO (SZO) nanowires (NWs) via a vapor-liquid-solid mechanism in a physical vapor deposition. The process condition for the SZO NW formation is optimized by adjusting the kinetic energy and the flux of the laser-ablated particles by hot-wall control. Electron microscopes ensure excellent morphologies of the doped NWs obtained. We confirm p-type doping effects, with low temperature photoluminescence used to trace the A(0)X peak. We realize diodes with all-ZnO-based p-n junctions of SZO NWs and Ga-doped ZnO thin films, resulting in asymmetric I-V characteristics with the turn on voltage of 3.8 V.
authors.affiliation: Center for Energy Materials Research, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: Yong-Won
authors.initials: YW
authors.lastname: Song
authors.forename: Kyoungwon
authors.initials: K
authors.lastname: Kim
authors.forename: Jae Pyoung
authors.initials: JP
authors.lastname: Ahn
authors.forename: Gun-Eik
authors.initials: GE
authors.lastname: Jang
authors.forename: Sang Yeol
authors.initials: SY
authors.lastname: Lee