title: Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement.
abstract: We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.
authors.affiliation: Department of Materials Science and Engineering, KAIST, Daejeon, 305-701, Republic of Korea.
authors.forename: Seong-Jun
authors.initials: SJ
authors.lastname: Jeong
authors.forename: Ji Eun
authors.initials: JE
authors.lastname: Kim
authors.forename: Hyoung-Seok
authors.initials: HS
authors.lastname: Moon
authors.forename: Bong Hoon
authors.initials: BH
authors.lastname: Kim
authors.forename: Su Min
authors.initials: SM
authors.lastname: Kim
authors.forename: Jin Baek
authors.initials: JB
authors.lastname: Kim
authors.forename: Sang Ouk
authors.initials: SO
authors.lastname: Kim