title: GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.
abstract: A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.
authors.forename: Takeo
authors.initials: T
authors.lastname: Maruyama
authors.forename: Tadashi
authors.initials: T
authors.lastname: Okumura
authors.forename: Shinichi
authors.initials: S
authors.lastname: Sakamoto
authors.forename: Koji
authors.initials: K
authors.lastname: Miura
authors.forename: Yoshifumi
authors.initials: Y
authors.lastname: Nishimoto
authors.forename: Shigehisa
authors.initials: S
authors.lastname: Arai