Chemically induced mobility gaps in graphene nanoribbons: a route for upscaling device performances.
We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasi-bound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically doped graphene nanoribbons with sizes within the reach of conventional lithography.
Biel
Blanca
B
CEA, LETI, MINATEC, F38054 Grenoble, France.
Triozon
François
F
Blase
X
X
Roche
Stephan
S
D000465:Algorithms; D001895:Boron / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry* / Q000145:classification; D009038:Motion; D049329:Nanostructures / Q000737:chemistry*
D006108:Graphite; D001895:Boron