title: Monolithic integrated Raman silicon laser.
abstract: We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.
authors.forename: Haisheng
authors.initials: H
authors.lastname: Rong
authors.forename: Ying-Hao
authors.initials: YH
authors.lastname: Kuo
authors.forename: Shengbo
authors.initials: S
authors.lastname: Xu
authors.forename: Ansheng
authors.initials: A
authors.lastname: Liu
authors.forename: Richard
authors.initials: R
authors.lastname: Jones
authors.forename: Mario
authors.initials: M
authors.lastname: Paniccia
authors.forename: Oded
authors.initials: O
authors.lastname: Cohen
authors.forename: Omri
authors.initials: O
authors.lastname: Raday