High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.
We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.
Härkönen
Antti
A
Rautiainen
Jussi
J
Guina
Mircea
M
Konttinen
Janne
J
Tuomisto
Pietari
P
Orsila
Lasse
L
Pessa
Markus
M
Okhotnikov
Oleg G
OG