title: Spin-polarized inelastic tunneling through insulating barriers.
abstract: Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.
authors.affiliation: Unité Mixte de Physique CNRS/Thales, Campus Polytechnique, 1 Avenue Augustin Fresnel, 91767 Palaiseau Cedex and Université Paris-Sud 11, 91405, Orsay, France.
authors.forename: Y
authors.initials: Y
authors.lastname: Lu
authors.forename: M
authors.initials: M
authors.lastname: Tran
authors.forename: H
authors.initials: H
authors.lastname: Jaffrès
authors.forename: P
authors.initials: P
authors.lastname: Seneor
authors.forename: C
authors.initials: C
authors.lastname: Deranlot
authors.forename: F
authors.initials: F
authors.lastname: Petroff
authors.forename: J-M
authors.initials: JM
authors.lastname: George
authors.forename: B
authors.initials: B
authors.lastname: Lépine
authors.forename: S
authors.initials: S
authors.lastname: Ababou
authors.forename: G
authors.initials: G
authors.lastname: Jézéquel