Soft graphoepitaxy of block copolymer assembly with disposable photoresist confinement.
We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.
Jeong
Seong-Jun
SJ
Department of Materials Science and Engineering, KAIST, Daejeon, 305-701, Republic of Korea.
Kim
Ji Eun
JE
Moon
Hyoung-Seok
HS
Kim
Bong Hoon
BH
Kim
Su Min
SM
Kim
Jin Baek
JB
Kim
Sang Ouk
SO