title: All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier.
abstract: An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.
authors.forename: L Q
authors.initials: LQ
authors.lastname: Guo
authors.forename: M J
authors.initials: MJ
authors.lastname: Connelly