title: Chemically induced mobility gaps in graphene nanoribbons: a route for upscaling device performances.
abstract: We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasi-bound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically doped graphene nanoribbons with sizes within the reach of conventional lithography.
authors.affiliation: CEA, LETI, MINATEC, F38054 Grenoble, France.
authors.forename: Blanca
authors.initials: B
authors.lastname: Biel
authors.forename: François
authors.initials: F
authors.lastname: Triozon
authors.forename: X
authors.initials: X
authors.lastname: Blase
authors.forename: Stephan
authors.initials: S
authors.lastname: Roche
mesh_terms: D000465:Algorithms; D001895:Boron / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry* / Q000145:classification; D009038:Motion; D049329:Nanostructures / Q000737:chemistry*
chemical_list: D006108:Graphite; D001895:Boron