Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.
Cheng
Szu-Lin
SL
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA. slcheng@stanford.edu
Lu
Jesse
J
Shambat
Gary
G
Yu
Hyun-Yong
HY
Saraswat
Krishna
K
Vuckovic
Jelena
J
Nishi
Yoshio
Y
D017076:Computer-Aided Design; D004563:Electrochemistry / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008904:Miniaturization; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
D005857:Germanium; D012825:Silicon