Probing the debye layer: capacitance and potential of zero charge measured using a debye-layer transistor.
We present a unique method for probing the properties of the electrolytic Debye layer, incorporating it as the active element in a novel radio frequency (rf) field-effect transistor. The capacitance of the Debye layer depends nonlinearly on the voltage applied across it, and we exploit this dependence to directly modulate the rf conductance between two nanofabricated interdigitated electrodes. We make quantitative measurements of the Debye-layer capacitance, allowing us to determine the potential of zero charge, a quantity of importance for electrochemistry and impedance-based biosensing.
Fraikin
J-L
JL
Department of Physics, University of California, Santa Barbara, California, USA.
Requa
M V
MV
Cleland
A N
AN
D025802:Electric Capacitance; D006046:Gold / Q000737:chemistry; D008855:Microscopy, Electron, Scanning; D014173:Transistors, Electronic
D006046:Gold