title: Terahertz response of GaN thin films.
abstract: The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy. The results correspond well with the Kohlrausch stretched exponential model. Using the Kohlrausch model fit not only provides the mobility of the free carriers in the GaN film, but also estimates the relaxation time distribution function and average relaxation time.
authors.forename: Tsong-Ru
authors.initials: TR
authors.lastname: Tsai
authors.forename: Shi-Jie
authors.initials: SJ
authors.lastname: Chen
authors.forename: Chih-Fu
authors.initials: CF
authors.lastname: Chang
authors.forename: Sheng-Hsien
authors.initials: SH
authors.lastname: Hsu
authors.forename: Tai-Yuan
authors.initials: TY
authors.lastname: Lin
authors.forename: Cheng-Chung
authors.initials: CC
authors.lastname: Chi