title: Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers using cascaded structure.
abstract: A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch can be released to reduce the driving power of modulator. Such kind of monolithic integration scheme also has potential for the applications of other high-speed optoelectronics devices.
authors.affiliation: Department of Photonics, Semiconductor Technology Research Development Center, Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
authors.forename: Fang-Zheng
authors.initials: FZ
authors.lastname: Lin
authors.forename: Tsu-Hsiu
authors.initials: TH
authors.lastname: Wu
authors.forename: Yi-Jen
authors.initials: YJ
authors.lastname: Chiu
mesh_terms: D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D055096:Optical Devices; D015203:Reproducibility of Results; D012542:Scattering, Radiation; D012666:Semiconductors; D012680:Sensitivity and Specificity; D018511:Systems Integration; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers