Quantification of thermal energy deposited in silicon by multiple femtosecond laser pulses.
We report our study of deposited thermal energy in silicon induced by multiple-pulse femtosecond laser irradiation. Using infrared thermography, we quantified through in situ direct measurement of temperature fields that a significant portion of laser power (two-thirds or more) was deposited into the silicon substrate instead of being reflected or carried away with the ablated material. This is believed to be the first reported study of direct in situ measurement of temperature fields as the result of deposited thermal energy from multiple femtosecond laser pulses. Our simulation results support the measured data.
Tran
D V
DV
Lam
Y C
YC
Wong
B S
BS
Zheng
H Y
HY
Hardt
D E
DE