The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures.
The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-N(+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Gamma to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but proportional to the product of the critical field and the number of the photo-excited carriers.
Hwang
Jenn-Shyong
JS
Dept. of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, Taiwan 70101.
Lin
Hui-Ching
HC
Chang
Chin-Kuo
CK
Wang
Tai-Shen
TS
Chang
Liang-Son
LS
Chyi
Jen-Inn
JI
Liu
Wei-Sheng
WS
Chen
Shu-Han
SH
Lin
Hao-Hsiung
HH
Liu
Po-Wei
PW