Size and density control of In droplets at near room temperatures.
We report on the ability to control the size and density of In droplets on GaAs(100) substrates at near room temperatures using solid source molecular beam epitaxy. We specifically demonstrate the height, diameter and density control of In droplets as functions of substrate temperature (T(sub)) and monolayer (ML) coverage. For a range of density (approximately 10(9)-10(10) cm(-2)), the growth window is revealed to be between 20 and 70 degrees C. For a fixed ML coverage, the size and density of droplets can be controlled by controlling the T(sub). For a fixed T(sub), by controlling the ML coverage, droplet size and density can be controlled. Even at near room temperatures (20-70 degrees C), In atoms are extremely sensitive to surface diffusion and this enables the control of the size and density of droplets. This study provides an aid to understanding the formation of In droplets at near room temperatures and can find applications in the formation of quantum structures and/or nanostructures based on droplet epitaxy.
Lee
J H
JH
Department of Electrical Engineering, Kwangwoon University, Nowon-Gu, Seoul, Korea.
Wang
Zh M
ZhM
Kim
N Y
NY
Salamo
G J
GJ
D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000379:methods*; D013696:Temperature
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium