title: Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN delta-layer.
abstract: An investigation of the effects of an embedded AlGaN delta-layer on the photoluminescence (PL) efficiency of an InGaN/GaN single quantum well (SQW) is presented. In particular, we focus on the dependence of the overlap integral between the electron and hole envelope wavefunctions on the AlGaN delta-layer thickness, aluminum composition, and Mg delta-doping concentration. We have demonstrated by means of simulation and experiment that the overlap integral and PL efficiency are enhanced with increasing delta-layer thickness. They have been shown to be raised further by increasing aluminum composition and Mg delta-doping concentration in the delta-layer.
authors: Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology, Gwangju 500-480, Korea. pjwup75@kitech.re.kr
authors: Jongwoon
authors: J
authors: Park
authors: Jongho
authors: J
authors: Lee
authors: Seounghwan
authors: S
authors: Park