title: Near-infrared femtosecond laser crystallized poly-Si thin film transistors.
abstract: Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions.
authors: Yi-Chao
authors: YC
authors: Wang
authors: Jia-Min
authors: JM
authors: Shieh
authors: Hsiao-Wen
authors: HW
authors: Zan
authors: Ci-Ling
authors: CL
authors: Pan