title: High Q whispering gallery modes in GaAs/AlAs pillar microcavities.
abstract: We report the observation of whispering gallery modes (WGM) in high quality GaAs/AlAs pillar microcavities defined by electron-beam lithography and electron cyclotron resonance reactive ion etching. Photoluminescence experiments, conducted using InAs quantum dots as an internal probe, reveal a remarkably simple WGM spectrum, consisting of a single series of TE modes. For diameters ranging from 3 to 4 mum, Q-factors in excess of 15 000 were measured, allowing for WGM lasing. Noticeably, sub-micron diameter micropillars also display high Qs (~ 1000), close to the limit set by intrinsic radiative losses. These results open the way to the development of original microlasers and improved quantum-dot single photon sources.
authors: Y-R
authors: YR
authors: Nowicki-Bringuier
authors: J
authors: J
authors: Claudon
authors: C
authors: C
authors: Böckler
authors: S
authors: S
authors: Reitzenstein
authors: M
authors: M
authors: Kamp
authors: A
authors: A
authors: Morand
authors: A
authors: A
authors: Forchel
authors: J M
authors: JM
authors: Gérard