title: Far infrared photonic crystals operating in the Reststrahl region.
abstract: We report here far infrared photonic crystals comprised of a lattice-matched pair of semiconductor materials: GaP and Si, or GaAs and Ge, or AlAs and GaAs. The crystals operate in a wavelength range where the real refractive index of one material undergoes a major dispersion associated with the LO and TO phonon absorption peaks. Using electromagnetic theory, we investigated the photonic-bandgap response for both TE and TM polarizations. Propagation losses for two types of crystals are estimated in this paper. These structures offer promise for the integration of III-V materials (GaP, GaAs) on group IV (Si, or Ge) for practical, active, far infrared photonic devices, such as light sources, amplifiers, modulators, reconfigurable waveguides and switches.
authors: Richard A
authors: RA
authors: Soref
authors: Zexuan
authors: Z
authors: Qiang
authors: Weidong
authors: W
authors: Zhou