title: Ion beam degradation analysis of poly(3-hexylthiophene) (P3HT): can cryo-FIB minimize irradiation damage?
abstract: In this study, to assess the influence of the temperature on the ion beam degradation, irradiation experiments on organic semiconductor materials were performed for both cryogenic and room temperature conditions. Thin P3HT films on silicon substrates were exposed to increasing ion doses in dual beam FIB. The degradation behaviour by means of a decrease in the C[double bond, length as m-dash]C band which corresponds to a loss of conjugation was investigated by means of Raman spectroscopy. In addition, atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) were used for a characterization of morphology and surface potential which provide information on temperature and ion dose dependent degradation behaviour.
authors: Institute for Electron Microscopy, Graz University of Technology, Austria. meltem.sezen@felmi-zfe.at
authors: Meltem
authors: M
authors: Sezen
authors: Harald
authors: H
authors: Plank
authors: Philipp M
authors: PM
authors: Nellen
authors: Stephan
authors: S
authors: Meier
authors: Boril
authors: B
authors: Chernev
authors: Werner
authors: W
authors: Grogger
authors: Evelin
authors: E
authors: Fisslthaler
authors: Emil J W
authors: EJ
authors: List
authors: Ullrich
authors: U
authors: Scherf
authors: Peter
authors: P
authors: Poelt
mesh_terms: D005615:Freezing; D018625:Microscopy, Atomic Force; D011827:Radiation; D013059:Spectrum Analysis, Raman; D013499:Surface Properties; D013696:Temperature; D013876:Thiophenes / Q000737:chemistry*
chemical_list: D013876:Thiophenes; C507295:poly(3-hexylthiophene)