title: Resistance switching in a SiC nanowire/Au nanoparticle network.
abstract: Resistance switching in a semiconductor nanowire/metal nanoparticle system is demonstrated. SiC nanowires grown on a Si substrate and decorated with Au nanoparticles are measured using W microprobes in a scanning electron microscope, where one probe is grounded and the other is biased. HIGH and LOW states can be toggled by applying a negative or positive pulse voltage. The switching mechanism is attributed to a charge transfer between the SiC nanowires and the Au nanoparticles.
authors: Graduate School of Science, Osaka University, Toyonaka, Osaka, Japan.
authors: Y
authors: Y
authors: Mori
authors: H
authors: H
authors: Kohno
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D017655:Silicon Compounds / Q000737:chemistry*
chemical_list: D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide