title: Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film.
abstract: For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified.
authors: Yong Wook
authors: YW
authors: Lee
authors: Bong-Jun
authors: BJ
authors: Kim
authors: Sungyoul
authors: S
authors: Choi
authors: Hyun-Tak
authors: HT
authors: Kim
authors: Gyungock
authors: G
authors: Kim