title: Electroluminescence of nanopatterned silicon with carbon implantation and solid phase epitaxial regrowth.
abstract: Electroluminescence at 1.28mum is observed in a nanopatterned silicon test structure that has been subjected to carbon implantation followed by solid-phase epitaxial regrowth for recrystalization. The sub-bandgap luminescence comes from a di-carbon complex known as 'G center'. Enrichment of silicon with carbon atoms has been achieved in a procedure consisting of two implantations and solid-phase epitaxial regrowth. Nanopatterning was done using an anodized aluminum oxide membrane as a mask for reactive ion etching. Along with the electroluminescence, an enhanced photoluminescence was measured.
authors: Efraim
authors: E
authors: Rotem
authors: Jeffrey M
authors: JM
authors: Shainline
authors: Jimmy M
authors: JM
authors: Xu