Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.
We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.
Vecchi
G
G
Raineri
F
F
Sagnes
I
I
Yacomotti
A
A
Monnier
P
P
Karle
T J
TJ
Lee
K-H
KH
Braive
R
R
Le Gratiet
L
L
Guilet
S
S
Beaudoin
G
G
Taneau
A
A
Bouchoule
S
S
Levenson
A
A
Raj
R
R