The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition.
Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.
Fu
S F
SF
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan.
Wang
S M
SM
Lee
L
L
Chen
C Y
CY
Tsai
W C
WC
Chou
W C
WC
Lee
M C
MC
Chang
W H
WH
Chen
W K
WK