title: Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.
abstract: We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.
authors: G
authors: G
authors: Vecchi
authors: F
authors: F
authors: Raineri
authors: I
authors: I
authors: Sagnes
authors: A
authors: A
authors: Yacomotti
authors: P
authors: P
authors: Monnier
authors: T J
authors: TJ
authors: Karle
authors: K-H
authors: KH
authors: Lee
authors: R
authors: R
authors: Braive
authors: L
authors: L
authors: Le Gratiet
authors: S
authors: S
authors: Guilet
authors: G
authors: G
authors: Beaudoin
authors: A
authors: A
authors: Taneau
authors: S
authors: S
authors: Bouchoule
authors: A
authors: A
authors: Levenson
authors: R
authors: R
authors: Raj