How does graphene grow? Easy access to well-ordered graphene films.
The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.
Müller
Frank
F
Anorganische und Allgemeine Chemie FR 8.1, Naturwissenschaftlich-Technische Fakultät III Chemie, Pharmazie und Werkstoffwissenschaften, Universität des Saarlandes C4.1, 66041 Saarbrücken, Germany.
Sachdev
Hermann
H
Hüfner
Stefan
S
Pollard
Andrew J
AJ
Perkins
Edward W
EW
Russell
James C
JC
Beton
Peter H
PH
Gsell
Stefan
S
Fischer
Martin
M
Schreck
Matthias
M
Stritzker
Bernd
B
D002244:Carbon / Q000737:chemistry*; D016252:Microscopy, Scanning Tunneling; D008962:Models, Theoretical; D049329:Nanostructures / Q000737:chemistry*; D056951:Photoelectron Spectroscopy
D002244:Carbon