Point defect engineered Si sub-bandgap light-emitting diode.
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.
Bao
Jiming
J
Tabbal
Malek
M
Kim
Taegon
T
Charnvanichborikarn
Supakit
S
Williams
James S
JS
Aziz
Michael J
MJ
Capasso
Federico
F