Growth of vertical InAs nanowires on heterostructured substrates.
We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 microm thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.
Roddaro
Stefano
S
NEST, CNR-INFM and Scuola Normale Superiore, Pisa, Italy.
Caroff
Philippe
P
Biasiol
Giorgio
G
Rossi
Francesca
F
Bocchi
Claudio
C
Nilsson
Kristian
K
Fröberg
Linus
L
Wagner
Jakob B
JB
Samuelson
Lars
L
Wernersson
Lars-Erik
LE
Sorba
Lucia
L
D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide