title: The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition.
abstract: Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.
authors: Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan.
authors: S F
authors: SF
authors: Fu
authors: S M
authors: SM
authors: Wang
authors: L
authors: L
authors: Lee
authors: C Y
authors: CY
authors: Chen
authors: W C
authors: WC
authors: Tsai
authors: W C
authors: WC
authors: Chou
authors: M C
authors: MC
authors: Lee
authors: W H
authors: WH
authors: Chang
authors: W K
authors: WK
authors: Chen