title: Large-area, three-state, binary amplitude and binary phase vertical-cavity multiple quantum well electroabsorption modulator.
abstract: We present the design and characterization of a large optical modulator array based on GaAs multiple quantum wells for amplitude and phase modulation. The device shows two high-reflectance states with a phase difference close to 180 degrees for use as a binary phase modulator. It also shows a third, low-reflectance state for use as an amplitude modulator. It is segmented into 64 pixels in a single row, giving an active area of 2mm x 5mm. We discuss the device performance as a ternary binary amplitude and binary phase modulator, including contrast ratio and uniformity, and show that a voltage swing of only 5V is needed to drive it.
authors: Stéphane
authors: S
authors: Junique
authors: Qin
authors: Q
authors: Wang
authors: Susanne
authors: S
authors: Almqvist
authors: Bertrand
authors: B
authors: Noharet
authors: Jan Y
authors: JY
authors: Andersson