The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures.
The strain state of 1 and 2.5 nm thick GaN insertions in GaN/AlN nanocolumn heterostructures has been studied by means of a combination of high resolution transmission electron microscopy, Raman spectroscopy and theoretical modeling. It is found that 2.5 nm thick GaN insertions are partially relaxed, which has been attributed to the presence of dislocations in the external AlN capping layer, in close relationship with the morphology of GaN insertions and with the AlN capping mechanism. The observed plastic relaxation in AlN is consistent with the small critical thickness expected for GaN/AlN radial heterostructures.
Bougerol
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C
CEA-CNRS group 'Nanophysique et Semiconducteurs', Institut Néel/CNRS-Université J Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble, France.
Songmuang
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R
Camacho
D
D
Niquet
Y M
YM
Mata
R
R
Cros
A
A
Daudin
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B