title: Mono-distributed single-walled carbon nanotube channel in field effect transistors (FETs) using electrostatic atomization deposition.
abstract: This communication reports on the novel work of creating a transistor channel based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic atomization deposition. The current method of drop-cast though convenient was unable to produce replicable transistor device due to its inherent inability in controlling the volume of liquid being drop-cast. Hence, this method of electrostatic atomization was introduced to consistently obtain a uniformly distributed SWNT channel resulting in a good transistor device.
authors: School of Materials Science and Engineering, Nanyang Technological University, Block No. 4.1, 50 Nanyang Avenue, Singapore 639798, Singapore.
authors: D W H
authors: DW
authors: Fam
authors: A I Y
authors: AI
authors: Tok