title: How does graphene grow? Easy access to well-ordered graphene films.
abstract: The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.
authors: Anorganische und Allgemeine Chemie FR 8.1, Naturwissenschaftlich-Technische Fakultät III Chemie, Pharmazie und Werkstoffwissenschaften, Universität des Saarlandes C4.1, 66041 Saarbrücken, Germany.
authors: Frank
authors: F
authors: Müller
authors: Hermann
authors: H
authors: Sachdev
authors: Stefan
authors: S
authors: Hüfner
authors: Andrew J
authors: AJ
authors: Pollard
authors: Edward W
authors: EW
authors: Perkins
authors: James C
authors: JC
authors: Russell
authors: Peter H
authors: PH
authors: Beton
authors: Stefan
authors: S
authors: Gsell
authors: Martin
authors: M
authors: Fischer
authors: Matthias
authors: M
authors: Schreck
authors: Bernd
authors: B
authors: Stritzker
mesh_terms: D002244:Carbon / Q000737:chemistry*; D016252:Microscopy, Scanning Tunneling; D008962:Models, Theoretical; D049329:Nanostructures / Q000737:chemistry*; D056951:Photoelectron Spectroscopy
chemical_list: D002244:Carbon