title: Filling of hole arrays with InAs quantum dots.
abstract: Focused ion beams are used to pattern GaAs(001) surfaces with an array of nanometer-deep holes upon which deposition of InAs results in quantum dot formation at the hole location. Experiments show that the size and quantity of quantum dots formed depend on growth parameters, and ion dose, which affects the size and shape of the resulting holes. Quantum dots fabricated in this fashion have a photoluminescence peak at 1.28 eV at 77 K, indicating that the ion irradiation due to patterning does not destroy their optical activity. Kinetic Monte Carlo simulations that include elastic relaxation qualitatively model the growth of dots in nanometer-deep holes, and demonstrate that growth temperature, depth of the holes, and the angle of the hole sidewalls strongly influence the number of quantum dots that form at their perimeter.
authors: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
authors: Jennifer Y
authors: JY
authors: Lee
authors: Mark J
authors: MJ
authors: Noordhoek
authors: Peter
authors: P
authors: Smereka
authors: Hugh
authors: H
authors: McKay
authors: Joanna M
authors: JM
authors: Millunchick
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D009010:Monte Carlo Method; D036103:Nanotechnology / Q000379:methods*; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide