title: Point defect engineered Si sub-bandgap light-emitting diode.
abstract: We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.
authors: Jiming
authors: J
authors: Bao
authors: Malek
authors: M
authors: Tabbal
authors: Taegon
authors: T
authors: Kim
authors: Supakit
authors: S
authors: Charnvanichborikarn
authors: James S
authors: JS
authors: Williams
authors: Michael J
authors: MJ
authors: Aziz
authors: Federico
authors: F
authors: Capasso