Observation of a bent crystal-lattice by x-ray interferometry.
he capability of operating a separate crystal x-ray interferometer over centimeter displacements has made it possible to observe minute strain fields of a bent crystal at the atomic scale resolution by means of phase-contrast x-ray topography. Measurement and predictive capabilities of lattice strain are key ingredients of a highly accurate measurement of the Si lattice parameter and of a determination of the number of atoms in a realization of the mass unit based on an atom mass. Here we show that the observed strain can be accurately predicted by a finite-element analysis of the crystal deformation.
Massa
Enrico
E
INRIM-Istituto Nazionale di Ricerca Metrologica, Torino, Italy. e.massa@inrim.it
Mana
Giovanni
G
Ferroglio
Luca
L
D003460:Crystallization; D004867:Equipment Design; D020342:Finite Element Analysis; D007368:Interferometry / Q000295:instrumentation* / Q000379:methods*; D008858:Microscopy, Phase-Contrast / Q000379:methods; D015233:Models, Statistical; D055095:Optics and Photonics; D015203:Reproducibility of Results; D012825:Silicon / Q000737:chemistry; D014961:X-Ray Diffraction / Q000379:methods; D014965:X-Rays
D012825:Silicon