High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn(2)SiO(4) nanowires.
A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn(2)SiO(4) nanowires.
Wang
Hongqiang
H
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, P.R. China.
Li
Guanghai
G
Jia
Lichao
L
Li
Liang
L
Wang
Guozhong
G