title: Growth of vertical InAs nanowires on heterostructured substrates.
abstract: We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 microm thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.
authors: NEST, CNR-INFM and Scuola Normale Superiore, Pisa, Italy.
authors: Stefano
authors: S
authors: Roddaro
authors: Philippe
authors: P
authors: Caroff
authors: Giorgio
authors: G
authors: Biasiol
authors: Francesca
authors: F
authors: Rossi
authors: Claudio
authors: C
authors: Bocchi
authors: Kristian
authors: K
authors: Nilsson
authors: Linus
authors: L
authors: Fröberg
authors: Jakob B
authors: JB
authors: Wagner
authors: Lars
authors: L
authors: Samuelson
authors: Lars-Erik
authors: LE
authors: Wernersson
authors: Lucia
authors: L
authors: Sorba
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide