title: High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn(2)SiO(4) nanowires.
abstract: A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn(2)SiO(4) nanowires.
authors: Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, P.R. China.
authors: Hongqiang
authors: H
authors: Wang
authors: Guanghai
authors: G
authors: Li
authors: Lichao
authors: L
authors: Jia
authors: Liang
authors: L
authors: Li
authors: Guozhong
authors: G
authors: Wang