Resistance switching in a SiC nanowire/Au nanoparticle network.
Resistance switching in a semiconductor nanowire/metal nanoparticle system is demonstrated. SiC nanowires grown on a Si substrate and decorated with Au nanoparticles are measured using W microprobes in a scanning electron microscope, where one probe is grounded and the other is biased. HIGH and LOW states can be toggled by applying a negative or positive pulse voltage. The switching mechanism is attributed to a charge transfer between the SiC nanowires and the Au nanoparticles.
Mori
Y
Y
Graduate School of Science, Osaka University, Toyonaka, Osaka, Japan.
Kohno
H
H
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D008855:Microscopy, Electron, Scanning; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D017655:Silicon Compounds / Q000737:chemistry*
D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide