Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution.
A 980 nm bottom-emitting vertical-cavity surface-emitting laser array with a nonuniform linear arrangement is reported to realize emission with a Gaussian far-field distribution. This array is composed of five symmetrically arranged elements of 200 microm, 150 microm, and 100 microm diameter, with center spacing of 300 microm and 250 microm, respectively. An output power of 880 mW with a high power density of 1 kW/cm2 is obtained. The divergence angle is below 20 degrees in the range of operating current from 0 A to 6 A. The theoretical simulation of the near-field and the far-field distribution is in good agreement with the experimental result. The comparison between this nonuniform linear array, the single device, and the conventional two-dimensional array is carried out to demonstrate the good performance of the linear array.
Cui
Jinjiang
J
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, 16 Eastern South Lake Road, Changchun 130033, China.
Ning
Yongqiang
Y
Zhang
Yan
Y
Kong
Peng
P
Liu
Guangyu
G
Zhang
Xing
X
Wang
Zhenfu
Z
Li
Te
T
Sun
Yanfang
Y
Wang
Lijun
L
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008027:Light; D015203:Reproducibility of Results; D012542:Scattering, Radiation; D012680:Sensitivity and Specificity