title: Design and characterization of a nonuniform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution.
abstract: A 980 nm bottom-emitting vertical-cavity surface-emitting laser array with a nonuniform linear arrangement is reported to realize emission with a Gaussian far-field distribution. This array is composed of five symmetrically arranged elements of 200 microm, 150 microm, and 100 microm diameter, with center spacing of 300 microm and 250 microm, respectively. An output power of 880 mW with a high power density of 1 kW/cm2 is obtained. The divergence angle is below 20 degrees in the range of operating current from 0 A to 6 A. The theoretical simulation of the near-field and the far-field distribution is in good agreement with the experimental result. The comparison between this nonuniform linear array, the single device, and the conventional two-dimensional array is carried out to demonstrate the good performance of the linear array.
authors: Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, 16 Eastern South Lake Road, Changchun 130033, China.
authors: Jinjiang
authors: J
authors: Cui
authors: Yongqiang
authors: Y
authors: Ning
authors: Yan
authors: Y
authors: Zhang
authors: Peng
authors: P
authors: Kong
authors: Guangyu
authors: G
authors: Liu
authors: Xing
authors: X
authors: Zhang
authors: Zhenfu
authors: Z
authors: Wang
authors: Te
authors: T
authors: Li
authors: Yanfang
authors: Y
authors: Sun
authors: Lijun
authors: L
authors: Wang
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008027:Light; D015203:Reproducibility of Results; D012542:Scattering, Radiation; D012680:Sensitivity and Specificity