title: High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide.
abstract: We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.
authors: Laurent
authors: L
authors: Vivien
authors: Mathieu
authors: M
authors: Rouvière
authors: Jean-Marc
authors: JM
authors: Fédéli
authors: Delphine
authors: D
authors: Marris-Morini
authors: Jean François
authors: JF
authors: Damlencourt
authors: Juliette
authors: J
authors: Mangeney
authors: Paul
authors: P
authors: Crozat
authors: Loubna
authors: L
authors: El Melhaoui
authors: Eric
authors: E
authors: Cassan
authors: Xavier
authors: X
authors: Le Roux
authors: Daniel
authors: D
authors: Pascal
authors: Suzanne
authors: S
authors: Laval