Shaped silicon wafers obtained by hot plastic deformation: performance evaluation for future astronomical x-ray telescopes.
In order to develop lightweight and high angular resolution x-ray mirrors, we have investigated hot plastic deformation of 4 in. silicon (111) wafers. A sample wafer was deformed using hemispherical dies with a curvature radius of 1000 mm. The measured radius of the deformed wafer was 1030 mm, suggesting that further conditioning is indispensable for better shaping. For the first time to our knowledge, x-ray reflection on a deformed wafer was detected at Al K(alpha) 1.49 keV. An estimated surface roughness of <1 nm from the x-ray reflection profile was comparable to that of a bare silicon wafer without deformation. Hence, no significant degradation of the microroughness was seen.
Ezoe
Yuichiro
Y
Department of Physics, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, Japan. ezoe@phys.metro-u.ac.jp
Shirata
Takayuki
T
Mitsuishi
Ikuyuki
I
Ishida
Manabu
M
Mitsuda
Kazuhisa
K
Morishita
Kohei
K
Nakajima
Kazuo
K