Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film.
For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a photo-assisted electrical gating in a two-terminal device is demonstrated based on vanadium dioxide thin film, instead of a three-terminal device with a gate terminal, by illuminating infrared light directly onto the film. Based on the light-induced phase transition, the threshold voltage of the device, in which an abrupt current jump take places, was theoretically anticipated to be controlled (electrically gated) by adjusting the light intensity. Finally, the prediction was experimentally verified.
Lee
Yong Wook
YW
Kim
Bong-Jun
BJ
Choi
Sungyoul
S
Kim
Hyun-Tak
HT
Kim
Gyungock
G