Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching.
A new finishing method was developed to correct the thickness distribution of a quartz crystal wafer by the numerically controlled scanning of a localized atmospheric pressure plasma. The thickness uniformity level of a commercially available AT-cut quartz crystal wafer was improved to less than 50 nm without any subsurface damage by applying one correction process. Furthermore, applying a pulse-modulated plasma markedly decreased the correction time of the thickness distribution without breaking the quartz crystal wafer by thermal stress.
Yamamura
Kazuya
K
Morikawa
Tetsuya
T
Ueda
Masaki
M
Nagano
Mikinori
M
Zettsu
Nobuyuki
N
Shibahara
Masafumi
M
D001274:Atmospheric Pressure; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D011791:Quartz / Q000737:chemistry*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers
D005740:Gases; D011791:Quartz