title: Electrophotoluminescence of sol-gel derived ZnO film: effect of electric field on near-band-edge photoluminescence.
abstract: The effect of electric field on near-band-edge (NBE) photoluminescence (PL) of a sol-gel derived ZnO film has been investigated via a SiO(2)/ZnO/SiOx(x < 2) double-barrier structure on Si under different forward biases. A forward current-voltage curve is characterized by a negative-differential-resistance (NDR) region, which follows a normal region. With an increase of forward bias the NBE PL of the ZnO film is enhanced in the normal region, but it is attenuated in the NDR region. The increase of forward bias also causes the NBE PL of the ZnO film to blueshift from approximately 377.6 to approximately 374.9 nm no matter how current changes. The mechanism for the effect of bias on the intensity and position of NBE PL of the ZnO film is discussed.
authors: Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
authors: Peiliang
authors: P
authors: Chen
authors: Xiangyang
authors: X
authors: Ma
authors: Yuanyuan
authors: Y
authors: Zhang
authors: Dongsheng
authors: D
authors: Li
authors: Deren
authors: D
authors: Yang