Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM.
The operation of a femtosecond Cr(4+):YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230 fs pulses centred at 1528 nm were generated at an average output power of 280 mW. The SESAM exhibited a low saturation fluence of 10 microJ/cm(2) and a short recovery time of 12 ps.
Metzger
N K
NK
SUPA School of Physics and Astronomy, University of St Andrews, St Andrews, Fife, UK. nkm2@st-and.ac.uk
Leburn
C G
CG
Lagatsky
A A
AA
Brown
C T A
CT
Calvez
S
S
Burns
D
D
Sun
H D
HD
Dawson
M D
MD
Le Dû
M
M
Harmand
J C
JC
Sibbett
W
W
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D036103:Nanotechnology / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*