title: Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.
abstract: The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.
authors: State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, Peoples's Republic of China.
authors: Ping-Jian
authors: PJ
authors: Li
authors: Zhi-Min
authors: ZM
authors: Liao
authors: Xin-Zheng
authors: XZ
authors: Zhang
authors: Xue-Jin
authors: XJ
authors: Zhang
authors: Hui-Chao
authors: HC
authors: Zhu
authors: Jing-Yun
authors: JY
authors: Gao
authors: K
authors: K
authors: Laurent
authors: Y
authors: Y
authors: Leprince-Wang
authors: N
authors: N
authors: Wang
authors: Da-Peng
authors: DP
authors: Yu
mesh_terms: D004560:Electricity; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D017553:Phosphorus Compounds / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D017553:Phosphorus Compounds; C012500:phosphorus pentoxide; D015034:Zinc Oxide