All-optical on-chip bit memory based on ultra  high Q InGaAsP photonic crystal.
We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 microm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 microW, which is about one hundred times less than that required for laser based bistable memories.
Shinya
Akihiko
A
NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan. shinya@nttbrl.jp
Matsuo
Shinji
S
Yosia
Tanabe
Takasumi
T
Kuramochi
Eiichi
E
Sato
Tomonari
T
Kakitsuka
Takaaki
T
Notomi
Masaya
M
D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D055096:Optical Devices; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*