title: Femtosecond pulse generation around 1500 nm using a GaInNAsSb SESAM.
abstract: The operation of a femtosecond Cr(4+):YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230 fs pulses centred at 1528 nm were generated at an average output power of 280 mW. The SESAM exhibited a low saturation fluence of 10 microJ/cm(2) and a short recovery time of 12 ps.
authors: SUPA School of Physics and Astronomy, University of St Andrews, St Andrews, Fife, UK. nkm2@st-and.ac.uk
authors: N K
authors: NK
authors: Metzger
authors: C G
authors: CG
authors: Leburn
authors: A A
authors: AA
authors: Lagatsky
authors: C T A
authors: CT
authors: Brown
authors: S
authors: S
authors: Calvez
authors: D
authors: D
authors: Burns
authors: H D
authors: HD
authors: Sun
authors: M D
authors: MD
authors: Dawson
authors: M
authors: M
authors: Le Dû
authors: J C
authors: JC
authors: Harmand
authors: W
authors: W
authors: Sibbett
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053844:Lasers, Solid-State; D036103:Nanotechnology / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*