title: The construction of Si 2 Sb 2 Te 5 electrical probe storage based on UV nanoimprint lithography.
abstract: The Si(2)Sb(2)Te(5) (SST) storage array with a density of 2.4 Gbit inch(-2) was fabricated by UV nanoimprint lithography (UV-NIL) and filling semiconductor technology. The area of the SST storage cell contacted with electrodes was 0.031 microm(2). Structural transformation of SST during heating was in situ studied by time-resolved x-ray diffraction (XRD). An electrical probe storage system was constructed by SST combining with a conductive atomic force microscope (C-AFM) with a nanoprobe. Switching of the SST electrical probe storage cell from the high resistance state to the low resistance state had been achieved, and the rate of these two resistance states was 37.71. The current increased apparently when the applied voltage exceeded 1.79 V.
authors: Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, People's Republic of China. liuyanbo@snpc.org.cn
authors: Yanbo
authors: Y
authors: Liu
authors: Ting
authors: T
authors: Zhang
authors: Guoxin
authors: G
authors: Zhang
authors: Zhitang
authors: Z
authors: Song
authors: Jing
authors: J
authors: Zhang
authors: Weimin
authors: W
authors: Zhou
authors: Jianping
authors: J
authors: Zhang