title: All-optical on-chip bit memory based on ultra  high Q InGaAsP photonic crystal.
abstract: We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 microm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 microW, which is about one hundred times less than that required for laser based bistable memories.
authors: NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan. shinya@nttbrl.jp
authors: Akihiko
authors: A
authors: Shinya
authors: Shinji
authors: S
authors: Matsuo
authors: Yosia
authors: Takasumi
authors: T
authors: Tanabe
authors: Eiichi
authors: E
authors: Kuramochi
authors: Tomonari
authors: T
authors: Sato
authors: Takaaki
authors: T
authors: Kakitsuka
authors: Masaya
authors: M
authors: Notomi
mesh_terms: D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval; D055096:Optical Devices; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*