Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.
The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.
Li
Ping-Jian
PJ
State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, Peoples's Republic of China.
Liao
Zhi-Min
ZM
Zhang
Xin-Zheng
XZ
Zhang
Xue-Jin
XJ
Zhu
Hui-Chao
HC
Gao
Jing-Yun
JY
Laurent
K
K
Leprince-Wang
Y
Y
Wang
N
N
Yu
Da-Peng
DP
D004560:Electricity; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D017553:Phosphorus Compounds / Q000737:chemistry; D015034:Zinc Oxide / Q000737:chemistry*
D017553:Phosphorus Compounds; C012500:phosphorus pentoxide; D015034:Zinc Oxide