title: Giant persistent photoconductivity in rough silicon nanomembranes.
abstract: This paper reports the observation of giant persistent photoconductivity from rough Si nanomembranes. When exposed to light, the current in p-type Si nanomembranes is enhanced by roughly 3 orders of magnitude in comparison with that in the dark and can persist for days at a high conductive state after the light is switched off. An applied gate voltage can tune the persistent photocurrent and accelerate the response to light. By analyzing the band structure of the devices and the surfaces through various coatings, we attribute the observed effect to hole-localized regions in Si nanomembranes due to the rough surfaces, where light can activate the confined holes.
authors.affiliation: Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany. y.mei@ifw-dresden.de
authors.forename: Ping
authors.initials: P
authors.lastname: Feng
authors.forename: Ingolf
authors.initials: I
authors.lastname: Mönch
authors.forename: Stefan
authors.initials: S
authors.lastname: Harazim
authors.forename: Gaoshan
authors.initials: G
authors.lastname: Huang
authors.forename: Yongfeng
authors.initials: Y
authors.lastname: Mei
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt