Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution.
In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, theta(c), determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage theta(R)<theta(c). At this theta(R), the spontaneous formation of isolated quantum wires takes place. For theta>theta(R) this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for theta = theta(c). These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires.
Fuster
David
D
Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid, Spain.
Alén
Benito
B
González
Luisa
L
González
Yolanda
Y
Martínez-Pastor
Juan
J
González
María Ujué
MU
García
Jorge M
JM