Simultaneous formation of two ripple modes on ion sputtered silicon.
The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of n approximately 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.
Keller
Adrian
A
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PO Box 510119, D-01314 Dresden, Germany.
Roßbach
Steven
S
Facsko
Stefan
S
Möller
Wolfhard
W