Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C(60) molecules embedded in a polymethyl methacrylate layer.
Current-voltage (I-V) measurements on Al/fullerene (C(60)) molecules embedded in polymethyl methacrylate/Al devices at 300 K showed a current bistability due to the existence of the C(60) molecules. The on/off ratio of the current bistability for the memory devices was as large as 10(3). The retention time of the devices was above 2.5 x 10(4) s at room temperature, and cycling endurance tests on these devices indicated that the ON and OFF currents showed no degradation until 50,000 cycles. Carrier transport mechanisms for the nonvolatile bistable devices are described on the basis of the I-V experimental and fitting results.
Cho
Sung Hwan
SH
National Research Laboratory for Nano Quantum Electronics, Division of Electronics and Computer Engineering, Hanyang University, Seoul, Korea.
Lee
Dong Ik
DI
Jung
Jae Hun
JH
Kim
Tae Whan
TW