title: Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.
abstract: An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length.
authors: Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany. ngeyer@mpi-halle.mpg.de
authors: Nadine
authors: N
authors: Geyer
authors: Zhipeng
authors: Z
authors: Huang
authors: Bodo
authors: B
authors: Fuhrmann
authors: Silko
authors: S
authors: Grimm
authors: Manfred
authors: M
authors: Reiche
authors: Trung-Kien
authors: TK
authors: Nguyen-Duc
authors: Johannes
authors: J
authors: de Boor
authors: Hartmut S
authors: HS
authors: Leipner
authors: Peter
authors: P
authors: Werner
authors: Ulrich
authors: U
authors: Gösele
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D005857:Germanium / Q000737:chemistry*; D008567:Membranes, Artificial; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012834:Silver / Q000737:chemistry; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D005857:Germanium; D012834:Silver; D000537:Aluminum Oxide; D012825:Silicon