title: Measurement and model of the infrared two-photon emission spectrum of GaAs.
abstract: Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.
authors: Department of Electrical Engineering, Technion, Haifa 32000, Israel.
authors: Alex
authors: A
authors: Hayat
authors: Pavel
authors: P
authors: Ginzburg
authors: Meir
authors: M
authors: Orenstein