title: Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot.
abstract: We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step toward controlling spin qubits in silicon quantum dots.
authors: University of Wisconsin-Madison, Madison, Wisconsin 53706, USA. cbsimmons@wisc.edu
authors: C B
authors: CB
authors: Simmons
authors: Madhu
authors: M
authors: Thalakulam
authors: B M
authors: BM
authors: Rosemeyer
authors: B J
authors: BJ
authors: Van Bael
authors: E K
authors: EK
authors: Sackmann
authors: D E
authors: DE
authors: Savage
authors: M G
authors: MG
authors: Lagally
authors: R
authors: R
authors: Joynt
authors: Mark
authors: M
authors: Friesen
authors: S N
authors: SN
authors: Coppersmith
authors: M A
authors: MA
authors: Eriksson
mesh_terms: D005857:Germanium / Q000737:chemistry*; D008422:Materials Testing; D036103:Nanotechnology; D010316:Particle Size; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D005857:Germanium; D012825:Silicon