title: Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si.
abstract: We report the electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. Metal-insulator-semiconductor structures in a form of Au/SiO(2)/ZnO-nanorod-array were fabricated on Si. Such devices exhibit random lasing when the Au electrode is applied with a sufficiently high positive voltage. In this context, in the region adjacent to SiO(2)/ZnO-nanorod-array interface, stimulated emission from ZnO occurs due to population inversion and, moreover, light is scattered by the nanorods and SiO(2) films. Therefore, random lasing proceeds due to optical gain achieved by the stimulated emission and multiple scattering.
authors: Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, ZhejiangUniversity, Hangzhou 310027, China. mseyang@zju.edu.cn
authors: Xiangyang
authors: X
authors: Ma
authors: Jingwei
authors: J
authors: Pan
authors: Peiliang
authors: P
authors: Chen
authors: Dongsheng
authors: D
authors: Li
authors: Hui
authors: H
authors: Zhang
authors: Yang
authors: Y
authors: Yang
authors: Deren
authors: D
authors: Yang
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008027:Light; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D008962:Models, Theoretical; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D014466:Ultraviolet Rays; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects*
chemical_list: D015034:Zinc Oxide; D012825:Silicon