title: Enhancement of spin lifetime in gate-fitted InGaAs narrow wires.
abstract: We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, the spin lifetimes in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. This enhancement of spin lifetime in gated wires is the first experimental evidence of dimensional confinement and resonant spin-orbit interaction effect controlled by gate bias voltage. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.
authors: Department of Materials Science, Tohoku University, Aramaki-Aza Aoba, Aoba-ku, Sendai 980-8579, Japan.
authors: Yoji
authors: Y
authors: Kunihashi
authors: Makoto
authors: M
authors: Kohda
authors: Junsaku
authors: J
authors: Nitta