title: Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3 nanowires.
abstract: Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures grown under Sn-rich conditions show large spectral emission variation, ranging from blue to red, with a green transition zone. Spectral emission changes correlate with changes in the chemical composition and structure found by energy dispersive spectroscopy and electron diffraction. A sharp transition from green to red emission correlates with a phase transition of beta-Ga(2)O(3) to polycrystalline SnO(2). The origin of the green emission band is discussed based on ab initio calculation results.
authors: Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC 20375, USA.
authors: S I
authors: SI
authors: Maximenko
authors: L
authors: L
authors: Mazeina
authors: Y N
authors: YN
authors: Picard
authors: J A
authors: JA
authors: Freitas
authors: V M
authors: VM
authors: Bermudez
authors: S M
authors: SM
authors: Prokes
mesh_terms: D005708:Gallium / Q000737:chemistry*; D008163:Luminescent Measurements / Q000379:methods*; D008422:Materials Testing; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties; D014001:Tin / Q000737:chemistry*
chemical_list: C038863:gallium oxide; D014001:Tin; D005708:Gallium