Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.
Zaoui
Wissem Sfar
WS
University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA. wissem@ece.ucsb.edu
Chen
Hui-Wen
HW
Bowers
John E
JE
Kang
Yimin
Y
Morse
Mike
M
Paniccia
Mario J
MJ
Pauchard
Alexandre
A
Campbell
Joe C
JC
D000465:Algorithms; D001709:Biotechnology / Q000379:methods; D003198:Computer Simulation; D004581:Electronics; D004867:Equipment Design; D005857:Germanium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D015233:Models, Statistical; D055095:Optics and Photonics; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry*
D005857:Germanium; D012825:Silicon