title: Diode-pumped passively mode-locked 1,342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber.
abstract: We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO(4) laser at 1342 nm. The QWs are grown on a Fe-doped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.
authors: Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan.
authors: S C
authors: SC
authors: Huang
authors: H L
authors: HL
authors: Cheng
authors: Yi-Fan
authors: YF
authors: Chen
authors: K W
authors: KW
authors: Su
authors: Y F
authors: YF
authors: Chen
authors: K F
authors: KF
authors: Huang