title: Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm.
abstract: Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.
authors: Laboratory of Optical Physics, Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors: Changwen
authors: C
authors: Xu
authors: Zhiyi
authors: Z
authors: Wei
authors: Yongdong
authors: Y
authors: Zhang
authors: Dehua
authors: D
authors: Li
authors: Zhiguo
authors: Z
authors: Zhang
authors: X
authors: X
authors: Wang
authors: S
authors: S
authors: Wang
authors: H J
authors: HJ
authors: Eichler
authors: Chunyu
authors: C
authors: Zhang
authors: Chunqing
authors: C
authors: Gao