An electrically modifiable synapse array of resistive switching memory.
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.
Choi
Hyejung
H
Department of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
Jung
Heesoo
H
Lee
Joonmyoung
J
Yoon
Jaesik
J
Park
Jubong
J
Seong
Dong-jun
DJ
Lee
Wootae
W
Hasan
Musarrat
M
Jung
Gun-Young
GY
Hwang
Hyunsang
H