title: Piezoelectric PZT thick films on LaNiO(3) buffered stainless steel foils for flexible device applications.
abstract: In this paper, we report on 4.5µm piezoelectric Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick films deposited on flexible stainless steel (SS) foils with LaNiO(3) (LNO) buffer layers using a ceramic powder/sol-gel solution modified composite method. The polycrystalline thick films show a hysteresis loop at an applied electric field of 900 kV cm(-1) with remanent polarization and coercive electric field values of 27µC cm(-2) and 85 kV cm(-1), respectively. At 1 kHz, the dielectric constant is 653 and the dielectric loss is 0.052. The leakage current density of the film is lower than 1.55 × 10(-5) Acm(-2) over the range of 0 to ±150V. The conduction current shows ohmic behaviour at a low electric field and space-charge-limited current characteristics at a high electric field.
authors: NIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089-1111, USA.
authors: B P
authors: BP
authors: Zhu
authors: D D
authors: DD
authors: Li
authors: Q F
authors: QF
authors: Zhou
authors: J
authors: J
authors: Shi
authors: K K
authors: KK
authors: Shung