Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits.
A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm(2) (260 A/cm(2) per well) were obtained with the stripe width of 5.4 microm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 microm and the cavity length of 805 microm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm(2), respectively.
Okumura
Tadashi
T
Quantum Nanoelectronics Research Center,Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan. okumura@quantum.pe.titech.ac.jp
Kurokawa
Munetaka
M
Shirao
Mizuki
M
Kondo
Daisuke
D
Ito
Hitomi
H
Nishiyama
Nobuhiko
N
Maruyama
Takeo
T
Arai
Shigehisa
S