title: An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
abstract: We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.
authors: Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada. Zhenguo.Lu@NRC-CNRC.GC.CA
authors: Z G
authors: ZG
authors: Lu
authors: J R
authors: JR
authors: Liu
authors: P J
authors: PJ
authors: Poole
authors: S
authors: S
authors: Raymond
authors: P J
authors: PJ
authors: Barrios
authors: D
authors: D
authors: Poitras
authors: G
authors: G
authors: Pakulski
authors: P
authors: P
authors: Grant
authors: D
authors: D
authors: Roy-Guay
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008027:Light; D008872:Microwaves; D008962:Models, Theoretical; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots; D012542:Scattering, Radiation; D012666:Semiconductors
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide