Synthesis of InAs nanowires via a low-temperature solvothermal route.
InAs nanowires with diameters of 7-70 nm and lengths of up to several micrometres were synthesized by a new modified solvothermal method. The x-ray diffraction pattern showed that the InAs nanowires that were prepared had zinc blende and wurtzite structures. A combination of concentration-driven and ligand-aided solution-solid (LSS) growth mechanisms was used to explain the morphology evolution of the InAs nanowires. The preparation method features a low temperature (120-180 degrees C) and economical mass-production and is free of catalyst nanoparticles. It was believed that we have explored a promising path towards the synthesis of other morphology-controllable one-dimensional (1D) III-V group nano-materials. The structural stability of InAs nanowires during annealing was also studied.
Xu
Xiangxing
X
State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
Wei
Wei
W
Qiu
Xiaoming
X
Yu
Kehan
K
Yu
Rongbiao
R
Si
Sanming
S
Xu
Guoqing
G
Huang
Wei
W
Peng
Bo
B