title: Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.
abstract: Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size effect of the concave microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size of the concave microstructures, ray tracing simulations show that the use of PDMS concave microstructures arrays can lead to increase in light extraction efficiency of InGaN LEDs by 1.5 to 2.0 times. Experiments utilizing 2.0 micron thick PDMS with 1.0 micron diameter of the PDMS concave microstructures arrays demonstrated 1.70 times improvement in light extraction efficiency, which is consistent with improvement of 1.77 times predicted from simulation. The enhancement in light extraction efficiency is attributed to increase in effective photon escape cone due to PDMS concave microstructures arrays.
authors: Department of Electrical and Computer Engineering, Lehigh University, Center for Optical Technologies, Bethlehem, PA 18015, USA. Ee@lehigh.edu
authors: Yik-Khoon
authors: YK
authors: Ee
authors: Pisist
authors: P
authors: Kumnorkaew
authors: Ronald A
authors: RA
authors: Arif
authors: Hua
authors: H
authors: Tong
authors: James F
authors: JF
authors: Gilchrist
authors: Nelson
authors: N
authors: Tansu
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004129:Dimethylpolysiloxanes / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D008962:Models, Theoretical; D055096:Optical Devices; D011789:Quantum Theory; D012542:Scattering, Radiation; D012666:Semiconductors; D014159:Transducers
chemical_list: D004129:Dimethylpolysiloxanes; D007204:Indium; C473348:gallium nitride; C013830:baysilon; D005708:Gallium; C513701:indium nitride