title: Design of high efficiency multi-GHz SiGe HBT electro-optic modulator.
abstract: We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz.
authors: Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, NY 12180, USA.
authors: Shengling
authors: S
authors: Deng
authors: Z Rena
authors: ZR
authors: Huang
authors: J F
authors: JF
authors: McDonald
mesh_terms: D003198:Computer Simulation; D017076:Computer-Aided Design; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium; D008027:Light; D008872:Microwaves; D008962:Models, Theoretical; D055096:Optical Devices; D012542:Scattering, Radiation; D012825:Silicon; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers
chemical_list: D005857:Germanium; D012825:Silicon