title: Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.
abstract: The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-band-gap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.
authors: Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA. jsimon@nd.edu
authors: John
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authors: Simon
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authors: Zhang
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authors: Goodman
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authors: Xing
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