title: Free-standing epitaxial graphene.
abstract: We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.
authors: Cornell Center for Materials Research, Cornell University, Ithaca, New York 14853, USA. ss626@cornell.edu
authors: Shriram
authors: S
authors: Shivaraman
authors: Robert A
authors: RA
authors: Barton
authors: Xun
authors: X
authors: Yu
authors: Jonathan
authors: J
authors: Alden
authors: Lihong
authors: L
authors: Herman
authors: Mvs
authors: M
authors: Chandrashekhar
authors: Jiwoong
authors: J
authors: Park
authors: Paul L
authors: PL
authors: McEuen
authors: Jeevak M
authors: JM
authors: Parpia
authors: Harold G
authors: HG
authors: Craighead
authors: Michael G
authors: MG
authors: Spencer
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D036103:Nanotechnology; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013499:Surface Properties
chemical_list: D017554:Carbon Compounds, Inorganic; D008567:Membranes, Artificial; D017655:Silicon Compounds; D006108:Graphite; C022088:silicon carbide