Diode-pumped passively mode-locked 1,342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber.
We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO(4) laser at 1342 nm. The QWs are grown on a Fe-doped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.
Huang
S C
SC
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan.
Cheng
H L
HL
Chen
Yi-Fan
YF
Su
K W
KW
Chen
Y F
YF
Huang
K F
KF