Free-standing epitaxial graphene.
We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.
Shivaraman
Shriram
S
Cornell Center for Materials Research, Cornell University, Ithaca, New York 14853, USA. ss626@cornell.edu
Barton
Robert A
RA
Yu
Xun
X
Alden
Jonathan
J
Herman
Lihong
L
Chandrashekhar
Mvs
M
Park
Jiwoong
J
McEuen
Paul L
PL
Parpia
Jeevak M
JM
Craighead
Harold G
HG
Spencer
Michael G
MG
D017554:Carbon Compounds, Inorganic / Q000737:chemistry; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D036103:Nanotechnology; D010316:Particle Size; D017655:Silicon Compounds / Q000737:chemistry; D013059:Spectrum Analysis, Raman; D013499:Surface Properties
D017554:Carbon Compounds, Inorganic; D008567:Membranes, Artificial; D017655:Silicon Compounds; D006108:Graphite; C022088:silicon carbide