Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 10(10) wires/cm(2), including the control of their diameter and length.
Geyer
Nadine
N
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany. ngeyer@mpi-halle.mpg.de
Huang
Zhipeng
Z
Fuhrmann
Bodo
B
Grimm
Silko
S
Reiche
Manfred
M
Nguyen-Duc
Trung-Kien
TK
de Boor
Johannes
J
Leipner
Hartmut S
HS
Werner
Peter
P
Gösele
Ulrich
U
D000537:Aluminum Oxide / Q000737:chemistry; D005857:Germanium / Q000737:chemistry*; D008567:Membranes, Artificial; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D012834:Silver / Q000737:chemistry; D013499:Surface Properties
D008567:Membranes, Artificial; D005857:Germanium; D012834:Silver; D000537:Aluminum Oxide; D012825:Silicon