Measurement and model of the infrared two-photon emission spectrum of GaAs.
Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.
Hayat
Alex
A
Department of Electrical Engineering, Technion, Haifa 32000, Israel.
Ginzburg
Pavel
P
Orenstein
Meir
M