title: An electrically modifiable synapse array of resistive switching memory.
abstract: This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.
authors: Department of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
authors: Hyejung
authors: H
authors: Choi
authors: Heesoo
authors: H
authors: Jung
authors: Joonmyoung
authors: J
authors: Lee
authors: Jaesik
authors: J
authors: Yoon
authors: Jubong
authors: J
authors: Park
authors: Dong-jun
authors: DJ
authors: Seong
authors: Wootae
authors: W
authors: Lee
authors: Musarrat
authors: M
authors: Hasan
authors: Gun-Young
authors: GY
authors: Jung
authors: Hyunsang
authors: H
authors: Hwang