title: Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits.
abstract: A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm(2) (260 A/cm(2) per well) were obtained with the stripe width of 5.4 microm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 microm and the cavity length of 805 microm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm(2), respectively.
authors: Quantum Nanoelectronics Research Center,Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan. okumura@quantum.pe.titech.ac.jp
authors: Tadashi
authors: T
authors: Okumura
authors: Munetaka
authors: M
authors: Kurokawa
authors: Mizuki
authors: M
authors: Shirao
authors: Daisuke
authors: D
authors: Kondo
authors: Hitomi
authors: H
authors: Ito
authors: Nobuhiko
authors: N
authors: Nishiyama
authors: Takeo
authors: T
authors: Maruyama
authors: Shigehisa
authors: S
authors: Arai