title: Broadband near-infrared luminescence in gamma-irradiated Bi-doped alpha-BaB(2)O(4) single crystals.
abstract: Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB(2)O(4)) single crystals were investigated. Bi(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 mus was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.
authors.affiliation: Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Chinese Academy of Sciences, ShanghaiInstitute of Ceramics, Shanghai 200050, China.
authors.forename: Liangbi
authors.initials: L
authors.lastname: Su
authors.forename: Jun
authors.initials: J
authors.lastname: Yu
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.forename: Hongjun
authors.initials: H
authors.lastname: Li
authors.forename: Lihe
authors.initials: L
authors.lastname: Zheng
authors.forename: Yan
authors.initials: Y
authors.lastname: Yang
authors.forename: Feng
authors.initials: F
authors.lastname: Wu
authors.forename: Haiping
authors.initials: H
authors.lastname: Xia
authors.forename: Jun
authors.initials: J
authors.lastname: Xu