The synthesis and electrical characterization of Cu2O/Al:ZnO radial p-n junction nanowire arrays.
Vertically aligned large-area p-Cu(2)O/n-AZO (Al-doped ZnO) radial heterojunction nanowire arrays were synthesized on silicon without using catalysts in thermal chemical vapor deposition followed by e-beam evaporation. Scanning electron microscopy and high-resolution transmission electron microscopy results show that poly-crystalline Cu(2)O nano-shells with thicknesses around 10 nm conformably formed on the entire periphery of pre-grown Al:ZnO single-crystalline nanowires. The Al doping concentration in the Al:ZnO nanowires with diameters around 50 nm were determined to be around 1.19 at.% by electron energy loss spectroscopy. Room-temperature photoluminescence spectra show that the broad green bands of pristine ZnO nanowires were eliminated by capping with Cu(2)O nano-shells. The current-voltage (I-V) measurements show that the p-Cu(2)O/n-AZO nanodiodes have well-defined current rectifying behavior. This paper provides a simple method to fabricate superior p-n radial nanowire arrays for developing nano-pixel optoelectronic devices and solar cells.
Kuo
Chien-Lin
CL
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
Wang
Ruey-Chi
RC
Huang
Jow-Lay
JL
Liu
Chuan-Pu
CP
Wang
Chun-Kai
CK
Chang
Sheng-Po
SP
Chu
Wen-Huei
WH
Wang
Chao-Hung
CH
Tu
Chia-Hao
CH