title: High-brightness single photon source from a quantum dot in a directional-emission nanocavity.
abstract: We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45 ps. Compared to the standard three-hole defect cavity, the perturbed PC cavity design improves the collection efficiency into an objective lens (NA = 0.75) by factor 4.5, and improves the coupling efficiency of the collected light into a single mode fiber by factor 1.9. The emission frequency is determined by the cavity mode, which is antibunched to g((2))(0) = 0.05. The cavity design also enables efficient coupling to a higher-order cavity mode for local optical excitation of cavity-coupled quantum dots.
authors.affiliation: Ginzton laboratory, Stanford University, Stanford, CA 94305, USA. mitsuru.toishi@jp.sony.com
authors.forename: Mitsuru
authors.initials: M
authors.lastname: Toishi
authors.forename: Dirk
authors.initials: D
authors.lastname: Englund
authors.forename: Andrei
authors.initials: A
authors.lastname: Faraon
authors.forename: Jelena
authors.initials: J
authors.lastname: Vucković
mesh_terms: D000465:Algorithms; D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D005336:Fiber Optic Technology; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D049449:Luminescence; D008855:Microscopy, Electron, Scanning / Q000379:methods; D015233:Models, Statistical; D016011:Normal Distribution; D055095:Optics and Photonics; D017785:Photons; D016012:Poisson Distribution; D045663:Quantum Dots; D013696:Temperature
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide