title: Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.
abstract: BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.
authors.affiliation: Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA. jihlefe@sandia.gov
authors.forename: Jon F
authors.initials: JF
authors.lastname: Ihlefeld
authors.forename: Wei
authors.initials: W
authors.lastname: Tian
authors.forename: Zi-Kui
authors.initials: ZK
authors.lastname: Liu
authors.forename: W Alan
authors.initials: WA
authors.lastname: Doolittle
authors.forename: Margitta
authors.initials: M
authors.lastname: Bernhagen
authors.forename: Peter
authors.initials: P
authors.lastname: Reiche
authors.forename: Reinhard
authors.initials: R
authors.lastname: Uecker
authors.forename: Ramamoorthy
authors.initials: R
authors.lastname: Ramesh
authors.forename: Darrell G
authors.initials: DG
authors.lastname: Schlom