Threshold currents for GaInAsP lasers emitting at 1.55 Mu m.
An analysis of the threshold current for double-heterostructure GaInAsP lasers is presented. The analysis is based on a simple expression for the gain-current relation and includes the effect of optical confinement. Using a refractive- index model for GaInAsP compounds, lasers emitting at 1.55 microm are investigated. Asymmetrical structures, i.e., lasers with different n- and p-confinement layers, are considered.
Buus
J
J
Electromagnetics Institute, Technical University of Denmark, DK-2800 Lyngby, Denmark.