title: The formation of a p-n junction in a polymer electrolyte top-gated bilayer graphene transistor.
abstract: We show simultaneous p- and n-type carrier injection in a bilayer graphene channel by varying the longitudinal bias across the channel and the top-gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 microF cm(-2), a value about 125 times higher than the conventional SiO(2) back-gate capacitance. Unlike the single-layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top- and back-gate geometry is estimated.
authors.affiliation: Department of Physics, Indian Institute of Science, Bangalore 560012, India.
authors.forename: Biswanath
authors.initials: B
authors.lastname: Chakraborty
authors.forename: Anindya
authors.initials: A
authors.lastname: Das
authors.forename: A K
authors.initials: AK
authors.lastname: Sood