Broadband near-infrared luminescence in gamma-irradiated Bi-doped alpha-BaB(2)O(4) single crystals.
Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB(2)O(4)) single crystals were investigated. Bi(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 mus was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.
Su
Liangbi
L
Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Chinese Academy of Sciences, ShanghaiInstitute of Ceramics, Shanghai 200050, China.
Yu
Jun
J
Zhou
Peng
P
Li
Hongjun
H
Zheng
Lihe
L
Yang
Yan
Y
Wu
Feng
F
Xia
Haiping
H
Xu
Jun
J