title: Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning.
abstract: Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.
authors.affiliation: Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui,Bunkyo 3-9-1, Fukui 910-8507, Japan. ktt219@163.com
authors.forename: Ting-Ting
authors.initials: TT
authors.lastname: Kang
authors.forename: Masatomo
authors.initials: M
authors.lastname: Yamamoto
authors.forename: Mikiyasu
authors.initials: M
authors.lastname: Tanaka
authors.forename: Akihiro
authors.initials: A
authors.lastname: Hashimoto
authors.forename: Akio
authors.initials: A
authors.lastname: Yamamoto
authors.forename: Ryota
authors.initials: R
authors.lastname: Sudo
authors.forename: Akifumi
authors.initials: A
authors.lastname: Noda
authors.forename: D W
authors.initials: DW
authors.lastname: Liu
authors.forename: Kohji
authors.initials: K
authors.lastname: Yamamoto