title: Electrostatically confined quantum rings in bilayer graphene.
abstract: We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B(0)) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a B(0) --> -B(0) transformation and, for a fixed total angular momentum index m, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anticrossings, which arise due to the overlap of gate-confined and magnetically confined states.
authors.affiliation: Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
authors.forename: M
authors.initials: M
authors.lastname: Zarenia
authors.forename: J M
authors.initials: JM
authors.lastname: Pereira
authors.forename: F M
authors.initials: FM
authors.lastname: Peeters
authors.forename: G A
authors.initials: GA
authors.lastname: Farias
mesh_terms: D006108:Graphite / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D011789:Quantum Theory; D012666:Semiconductors; D055672:Static Electricity
chemical_list: D006108:Graphite