Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning.
Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.
Kang
Ting-Ting
TT
Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui,Bunkyo 3-9-1, Fukui 910-8507, Japan. ktt219@163.com
Yamamoto
Masatomo
M
Tanaka
Mikiyasu
M
Hashimoto
Akihiro
A
Yamamoto
Akio
A
Sudo
Ryota
R
Noda
Akifumi
A
Liu
D W
DW
Yamamoto
Kohji
K