title: Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy.
abstract: Optical spin injection is studied in novel laterally-arranged self-assembled InAs/GaAs quantum dot structures, by using optical orientation measurements in combination with tunable laser spectroscopy. It is shown that spins of uncorrelated free carriers are better conserved during the spin injection than the spins of correlated electrons and holes in an exciton. This is attributed to efficient spin relaxation promoted by the electron-hole exchange interaction of the excitons. Our finding suggests that separate carrier injection, such as that employed in electrical spin injection devices, can be advantageous for spin conserving injection. It is also found that the spin injection efficiency decreases for free carriers with high momentum, due to the acceleration of spin relaxation processes.
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden.
authors.forename: J
authors.initials: J
authors.lastname: Beyer
authors.forename: I A
authors.initials: IA
authors.lastname: Buyanova
authors.forename: S
authors.initials: S
authors.lastname: Suraprapapich
authors.forename: C W
authors.initials: CW
authors.lastname: Tu
authors.forename: W M
authors.initials: WM
authors.lastname: Chen
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D036103:Nanotechnology; D045663:Quantum Dots; D013057:Spectrum Analysis / Q000379:methods*
chemical_list: D001152:Arsenicals; D007204:Indium; C076773:indium arsenide