Schottky junction photovoltaic devices based on CdS single nanobelts.
Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.
Ye
Y
Y
State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, People's Republic of China.
Dai
L
L
Wu
P C
PC
Liu
C
C
Sun
T
T
Ma
R M
RM
Qin
G G
GG
D019187:Cadmium Compounds / Q000737:chemistry*; D004553:Electric Conductivity; D004563:Electrochemistry / Q000295:instrumentation / Q000379:methods; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D013440:Sulfides / Q000737:chemistry*
D019187:Cadmium Compounds; D013440:Sulfides; C034939:cadmium sulfide