title: Signal amplification by 1/f noise in silicon-based nanomechanical resonators.
abstract: We report signal amplification by 1/f(alpha) noise with stochastic resonance in a nonlinear nanomechanical resonator. The addition of 1/f(alpha) noise to a subthreshold modulation signal enhances the probability of an electrostatically driven resonator switching between its two vibrational states in the hysteretic region. Considering the prevalence of 1/f noise in the materials in integrated circuits, signal enhancement demonstrated here, using a fully on-chip electronic actuation/detection scheme, suggests beneficial use of the otherwise detrimental noise.
authors.affiliation: Department of Physics, Boston University, Boston, Massachusetts 02215, USA.
authors.forename: Diego N
authors.initials: DN
authors.lastname: Guerra
authors.forename: Tyler
authors.initials: T
authors.lastname: Dunn
authors.forename: Pritiraj
authors.initials: P
authors.lastname: Mohanty
mesh_terms: D003198:Computer Simulation; D004566:Electrodes; D004581:Electronics / Q000295:instrumentation; D036103:Nanotechnology / Q000295:instrumentation*; D017711:Nonlinear Dynamics; D011846:Radio Waves; D012825:Silicon; D055672:Static Electricity; D013269:Stochastic Processes; D013997:Time Factors; D014732:Vibration
chemical_list: D012825:Silicon