title: Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.
abstract: We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.
authors.affiliation: Electro-Optics Center and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA. jrobinson@psu.edu
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson
authors.forename: Maxwell
authors.initials: M
authors.lastname: Wetherington
authors.forename: Joseph L
authors.initials: JL
authors.lastname: Tedesco
authors.forename: Paul M
authors.initials: PM
authors.lastname: Campbell
authors.forename: Xiaojun
authors.initials: X
authors.lastname: Weng
authors.forename: Joseph
authors.initials: J
authors.lastname: Stitt
authors.forename: Mark A
authors.initials: MA
authors.lastname: Fanton
authors.forename: Eric
authors.initials: E
authors.lastname: Frantz
authors.forename: David
authors.initials: D
authors.lastname: Snyder
authors.forename: Brenda L
authors.initials: BL
authors.lastname: VanMil
authors.forename: Glenn G
authors.initials: GG
authors.lastname: Jernigan
authors.forename: Rachael L
authors.initials: RL
authors.lastname: Myers-Ward
authors.forename: Charles R
authors.initials: CR
authors.lastname: Eddy
authors.forename: D Kurt
authors.initials: DK
authors.lastname: Gaskill