Method for measuring the trench depth of a very-large-scale-integration dynamic random-access memory capacitor based on a Michelson interferometer.
A simple method is proposed to measure precisely the trench depth of very-large-scale-integration, dynamic random-access memory capacitor cells., The measurement system is based on a Michelson interferometer using a silicon wafer with trenches as one of the two reflecting mirrors. Measurements of the trench depth can be made within 0.2-microm error.
Takada
K
K
Tsurumi
S
S
Nakajima
S
S
Noda
J
J