title: Negative differential resistance in GaN nanocrystals above room temperature.
abstract: Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is approximately 7 V above room temperature.
authors.affiliation: Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.
authors.forename: Basant
authors.initials: B
authors.lastname: Chitara
authors.forename: D S
authors.initials: DS
authors.lastname: Ivan Jebakumar
authors.forename: C N R
authors.initials: CN
authors.lastname: Rao
authors.forename: S B
authors.initials: SB
authors.lastname: Krupanidhi
mesh_terms: D005708:Gallium / Q000737:chemistry*; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology; D013696:Temperature
chemical_list: D005708:Gallium; C027235:gallium nitrate