Negative differential resistance in GaN nanocrystals above room temperature.
Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is approximately 7 V above room temperature.
Chitara
Basant
B
Materials Research Centre, Indian Institute of Science, Bangalore 560012, India.
Ivan Jebakumar
D S
DS
Rao
C N R
CN
Krupanidhi
S B
SB
D005708:Gallium / Q000737:chemistry*; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology; D013696:Temperature
D005708:Gallium; C027235:gallium nitrate