title: Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.
abstract: We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 degrees C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 microeV.
authors.affiliation: Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan. MANO.Takaaki@nims.go.jp
authors.forename: T
authors.initials: T
authors.lastname: Mano
authors.forename: M
authors.initials: M
authors.lastname: Abbarchi
authors.forename: T
authors.initials: T
authors.lastname: Kuroda
authors.forename: C A
authors.initials: CA
authors.lastname: Mastrandrea
authors.forename: A
authors.initials: A
authors.lastname: Vinattieri
authors.forename: S
authors.initials: S
authors.lastname: Sanguinetti
authors.forename: K
authors.initials: K
authors.lastname: Sakoda
authors.forename: M
authors.initials: M
authors.lastname: Gurioli