Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale.
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.
Robinson
Joshua A
JA
Electro-Optics Center and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA. jrobinson@psu.edu
Wetherington
Maxwell
M
Tedesco
Joseph L
JL
Campbell
Paul M
PM
Weng
Xiaojun
X
Stitt
Joseph
J
Fanton
Mark A
MA
Frantz
Eric
E
Snyder
David
D
VanMil
Brenda L
BL
Jernigan
Glenn G
GG
Myers-Ward
Rachael L
RL
Eddy
Charles R
CR
Gaskill
D Kurt
DK