title: Experimental and density functional theory study of the tribochemical wear behavior of SiO2 in humid and alcohol vapor environments.
abstract: This paper investigates the reaction steps involved in tribochemical wear of SiO(2) surfaces in humid ambient conditions and the mechanism of wear prevention due to alcohol adsorption. The friction and wear behaviors of SiO(2) were tested in three distinct gaseous environments at room temperature: dry argon, argon with 50% relative humidity (RH), and argon with n-pentanol vapor pressure 50% relative to the saturation pressure (P/P(sat)). Adsorbed gas molecules have significant chemical influences on the wear of the surface. The SiO(2) surface wears more readily in humid ambient compared to the dry case; however, it does not show any measurable wear in 50% P/P(sat) n-pentanol vapor at the same nominal contact load tested in the dry and humid environments. The tribochemical wear of the SiO(2) surface can be considered the Si-O-Si bond cleavage upon reactions with the impinging vapor molecules under tribological stress. DFT calculations were used to estimate the apparent activation energy needed to cleave the Si-O-Si bond at beta-cristobalite (111) and alpha-quartz (001) surfaces by reactions with impinging water and alcohol vapor molecules. The alkoxide termination of the SiO(2) surfaces increases the energy barrier required to cleave the Si-O-Si bonds when compared to hydroxyl-terminated SiO(2) surfaces.
authors.affiliation: Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Anna L
authors.initials: AL
authors.lastname: Barnette
authors.forename: David B
authors.initials: DB
authors.lastname: Asay
authors.forename: Don
authors.initials: D
authors.lastname: Kim
authors.forename: Benjamin D
authors.initials: BD
authors.lastname: Guyer
authors.forename: Hanim
authors.initials: H
authors.lastname: Lim
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Janik
authors.forename: Seong H
authors.initials: SH
authors.lastname: Kim