title: Critically coupled surface phonon-polariton excitation in silicon carbide.
abstract: We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA. bhn69@physics.utexas.edu
authors.forename: Burton
authors.initials: B
authors.lastname: Neuner
authors.forename: Dmitriy
authors.initials: D
authors.lastname: Korobkin
authors.forename: Chris
authors.initials: C
authors.lastname: Fietz
authors.forename: Davy
authors.initials: D
authors.lastname: Carole
authors.forename: Gabriel
authors.initials: G
authors.lastname: Ferro
authors.forename: Gennady
authors.initials: G
authors.lastname: Shvets