title: Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixing.
abstract: Studies of the angular dependence of cw degenerate four-wave mixing in n-type InSb have yielded a value for the diffusion length, l(D), of 60 +/- 2 microm. From this, the dependence of l(D) on photoexcited carrier concentration is calculated. A simple model has been developed to estimate the corresponding parallel-processing capabilities of semi-conductor-based, all-optical, parallel-processing digital computing systems.
authors.forename: D J
authors.initials: DJ
authors.lastname: Hagan
authors.forename: H A
authors.initials: HA
authors.lastname: Mackenzie
authors.forename: H A
authors.initials: HA
authors.lastname: Attar
authors.forename: W J
authors.initials: WJ
authors.lastname: Firth