Critically coupled surface phonon-polariton excitation in silicon carbide.
We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.
Neuner
Burton
B
Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA. bhn69@physics.utexas.edu
Korobkin
Dmitriy
D
Fietz
Chris
C
Carole
Davy
D
Ferro
Gabriel
G
Shvets
Gennady
G