Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions.
We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V x cm for a 3 V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0 V bias, due to free carrier absorption.
Li
Zhi-Yong
ZY
Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), 35A Tsinghua East Road, Beijing 100083, China. lizhy@semi.ac.cn
Xu
Dan-Xia
DX
McKinnon
W Ross
WR
Janz
Siegfried
S
Schmid
Jens H
JH
Cheben
Pavel
P
Yu
Jin-Zhong
JZ