Alignment of semiconductor nanowires using ion beams.
Gallium arsenide nanowires are grown on 100 GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35 degrees off the substrate surface. These straight nanowires are irradiated with different kinds of energetic ions. Depending on the ion species and energy, downwards or upwards bending of the nanowires is observed to increase with ion fluence. In the case of upwards bending, the nanowires can be aligned towards the ion beam direction at high fluences. Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results.
Borschel
Christian
C
Institute for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany. christian.borschel@uni-jena.de
Niepelt
Raphael
R
Geburt
Sebastian
S
Gutsche
Christoph
C
Regolin
Ingo
I
Prost
Werner
W
Tegude
Franz-Josef
FJ
Stichtenoth
Daniel
D
Schwen
Daniel
D
Ronning
Carsten
C
D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007477:Ions; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008968:Molecular Conformation / Q000528:radiation effects; D036103:Nanotechnology / Q000379:methods; D043942:Nanotubes / Q000737:chemistry* / Q000528:radiation effects* / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
D001152:Arsenicals; D007477:Ions; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium