title: Method for measuring the trench depth of a very-large-scale-integration dynamic random-access memory capacitor based on a Michelson interferometer.
abstract: A simple method is proposed to measure precisely the trench depth of very-large-scale-integration, dynamic random-access memory capacitor cells., The measurement system is based on a Michelson interferometer using a silicon wafer with trenches as one of the two reflecting mirrors. Measurements of the trench depth can be made within 0.2-microm error.
authors.forename: K
authors.initials: K
authors.lastname: Takada
authors.forename: S
authors.initials: S
authors.lastname: Tsurumi
authors.forename: S
authors.initials: S
authors.lastname: Nakajima
authors.forename: J
authors.initials: J
authors.lastname: Noda