Frequency- and polarization-selective Schottky detectors in the visible and near ultraviolet.
The influence of dielectric coatings on the photoresponsivity of metal-insulator-semiconductor structures on holographic submicrometer sinusoidal grating structures is investigated. Narrow-band photodetectors are realized based on the excitation of transverse electric modes and surface plasmon polaritons in the vacuum-MgF(2)-Al or vacuum-SiO(2)-A1 layer system on Si substrates. These detectors are sensitive to either s- or p-polarized light. Quantum efficiencies up to 20% and a linewidth of 18 mm were achieved with transverse electric modes at a wavelength lambda = 325 nm. The resonances are tunable from the ultraviolet into the visible regime by variation of the dielectric film thickness.
Berthold
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K
Beinstingl
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W
Gornik
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E