Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
We report the growth of GaAs/AlGaAs core-shell nanowires (NWs) on GaAs(111)B substrates by Au-assisted molecular beam epitaxy. Electron microscopy shows the formation of a wurtzite AlGaAs shell structure both in the radial and the axial directions outside a wurtzite GaAs core. With higher Al content, a lower axial and a higher radial growth rate of the AlGaAs shell were observed. Room temperature and low temperature (4.4 K) micro-photoluminescence measurements show a much higher radiative efficiency from the GaAs core after the NW is overgrown with a radial AlGaAs shell.
Zhou
H L
HL
Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491, Trondheim, Norway. hailong.zhou@iet.ntnu.no
Hoang
T B
TB
Dheeraj
D L
DL
van Helvoort
A T J
AT
Liu
L
L
Harmand
J C
JC
Fimland
B O
BO
Weman
H
H
D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum