title: Laser direct writing of nanoreliefs in Sn nanofilms.
abstract: High-resolution (approximately 200 nm) nanoreliefs, which possess a controllable height change (Deltah, up to film thickness) and transmittance or reflectance, have been successfully fabricated in 12-nm-thick Sn films by using 532 nm pulsed laser direct writing. Different from current micro/nanofabrication techniques, the height change of the nanoreliefs is generated by a laser-induced-thickening process. The majority of the height change comes from a balling and coarsening effect rather than oxidation of grains. Because both optical density and Deltah of the nanoreliefs are almost linear to laser power, the optical images can highly resemble the topographic images. This technique is useful for fabricating complicated nanorelief structures and fine images.
authors.affiliation: National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China.
authors.forename: Chuan Fei
authors.initials: CF
authors.lastname: Guo
authors.forename: Zhuwei
authors.initials: Z
authors.lastname: Zhang
authors.forename: Sihai
authors.initials: S
authors.lastname: Cao
authors.forename: Qian
authors.initials: Q
authors.lastname: Liu