title: Ultrahigh-performance inverters based on CdS nanobelts.
abstract: We report ultrahigh-performance inverters, each consisting of two top-gate metal-oxide-semiconductor field-effect transistors based on n-CdS nanobelts. High-kappa HfO(2) dielectrics are used as the top-gate oxide layers. The inverters have a large supply voltage (V(DD)) range (from 50 mV to 10 V) and very high voltage gain ( approximately 10, 100, and 1000 at V(DD) = 0.2, 1, and 10 V, respectively). Current consumption is less than 7 nA at V(DD) = 1 V, corresponding to a power consumption of less than 7 nW. The high and low output voltages are close to full rail. The inverters also exhibit good dynamic behavior with square wave input at frequencies up to 1 kHz. The operation of the inverters is analyzed in detail. The inverters are promising for future low power high performance logic circuit applications.
authors.affiliation: State Key Lab for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China.
authors.forename: Peicai
authors.initials: P
authors.lastname: Wu
authors.forename: Yu
authors.initials: Y
authors.lastname: Ye
authors.forename: Tuo
authors.initials: T
authors.lastname: Sun
authors.forename: Ruoming
authors.initials: R
authors.lastname: Peng
authors.forename: Xiaonan
authors.initials: X
authors.lastname: Wen
authors.forename: Wanjin
authors.initials: W
authors.lastname: Xu
authors.forename: Cui
authors.initials: C
authors.lastname: Liu
authors.forename: Lun
authors.initials: L
authors.lastname: Dai