title: Control of spin precession in a spin-injected field effect transistor.
abstract: Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.
authors.affiliation: Center for Spintronics Research, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136-791, Korea.
authors.forename: Hyun Cheol
authors.initials: HC
authors.lastname: Koo
authors.forename: Jae Hyun
authors.initials: JH
authors.lastname: Kwon
authors.forename: Jonghwa
authors.initials: J
authors.lastname: Eom
authors.forename: Joonyeon
authors.initials: J
authors.lastname: Chang
authors.forename: Suk Hee
authors.initials: SH
authors.lastname: Han
authors.forename: Mark
authors.initials: M
authors.lastname: Johnson