Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities.
Small polaron carrier density in epitaxial, doped CeO(2) thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.
Chueh
William C
WC
Department of Materials Science, California Institute of Technology, Pasadena, CA 91125, USA.
Haile
Sossina M
SM