title: Theory for the temperature rise in optically bistable GaAs/AlGaAs étalons including diffraction, heat conduction, and carrier diffusion.
abstract: We report on a realistic model for optically bistable GaAs/AlGaAs Fabry-Perot étalons. The model incorporates diffraction, carrier diffusion, and heat conduction, taking all the layers of the structure into account. For the optical nonlinearity the carrier density and temperature-dependent plasma theory is used. Devices with less than a 1-K temperature rise should be possible to design.
authors.forename: U
authors.initials: U
authors.lastname: Olin
authors.forename: O
authors.initials: O
authors.lastname: Sahlén