title: Phosphorus doped Zn(1-x)Mg(x)O nanowire arrays.
abstract: We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
authors.forename: S S
authors.initials: SS
authors.lastname: Lin
authors.forename: J I
authors.initials: JI
authors.lastname: Hong
authors.forename: J H
authors.initials: JH
authors.lastname: Song
authors.forename: Y
authors.initials: Y
authors.lastname: Zhu
authors.forename: H P
authors.initials: HP
authors.lastname: He
authors.forename: Z
authors.initials: Z
authors.lastname: Xu
authors.forename: Y G
authors.initials: YG
authors.lastname: Wei
authors.forename: Y
authors.initials: Y
authors.lastname: Ding
authors.forename: R L
authors.initials: RL
authors.lastname: Snyder
authors.forename: Z L
authors.initials: ZL
authors.lastname: Wang