title: Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.
abstract: In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S(22) with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper.
authors.affiliation: University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA. dxdai@ece.ucsb.edu
authors.forename: Daoxin
authors.initials: D
authors.lastname: Dai
authors.forename: Hui-Wen
authors.initials: HW
authors.lastname: Chen
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
authors.forename: Yimin
authors.initials: Y
authors.lastname: Kang
authors.forename: Mike
authors.initials: M
authors.lastname: Morse
authors.forename: Mario J
authors.initials: MJ
authors.lastname: Paniccia