Highly efficient crossing structure for silicon-on-insulator waveguides.
A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2 dB and crosstalk and reflection losses below 40 dB in a broad bandwidth of 20 nm. Furthermore, the resulting crossing structure has a footprint of only 6x6 microm(2) and does not require any additional fabrication steps.
Sanchis
Pablo
P
Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia, Camino de Vera, s/n,46022, Valencia, Spain. pabsanki@ntc.upv.es
Villalba
Pablo
P
Cuesta
Francisco
F
Håkansson
Andreas
A
Griol
Amadeu
A
Galán
José V
JV
Brimont
Antoine
A
Martí
Javier
J