title: Low-loss semiconductor waveguide bends.
abstract: An experimental comparison is made between the losses of waveguide bends in disorder-delineated waveguides in semiconductor superlattices composed of GaAs and AlAs layers for simple abrupt bends and abrupt bends with an additional half-angle guiding wall proposed by Shiina et al. [Opt. Lett. 11, 736 (1986)]. For light above the band gap of bulk GaAs, the abrupt and Shiina bends were found to have to 3-dB loss angles of 3 and 7 deg, respectively. This improved performance suggests that the specific geometry of the bends is yet another degree of freedom in designing guiding structure for planar routing.
authors.forename: P D
authors.initials: PD
authors.lastname: Swanson
authors.forename: F
authors.initials: F
authors.lastname: Julien
authors.forename: M A
authors.initials: MA
authors.lastname: Emanuel
authors.forename: L
authors.initials: L
authors.lastname: Sloan
authors.forename: T
authors.initials: T
authors.lastname: Tang
authors.forename: T A
authors.initials: TA
authors.lastname: Detemple
authors.forename: J J
authors.initials: JJ
authors.lastname: Coleman