Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.
In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S(22) with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper.
Dai
Daoxin
D
University of California Santa Barbara, ECE Department, Santa Barbara, CA 93106, USA. dxdai@ece.ucsb.edu
Chen
Hui-Wen
HW
Bowers
John E
JE
Kang
Yimin
Y
Morse
Mike
M
Paniccia
Mario J
MJ