Wavelength optimization and power dependence of optically controlled modulation in InGaAsP/InP.
We investigate wavelength and power dependence of optically controlled transmission modulation based on dynamic band filling in InGaAsP (lambda(g) = 1.3 microm). A maximum modulation depth of 42% is observed at a 1280-nm wavelength for 5-mW control power. The modulation depth slightly decreases with increasing test power. A theoretical analysis based on carrier rate equations and direct electronic transitions between parabolic bands provides a good description of the experiments.
Kowalsky
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Ebeling
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