Amplitude and phase modulation by free-carrier injection in III-V semiconducting waveguides for the 10.6-microm wavelength.
We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 microm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GalnAs layers on InP substrates. Absorptions of 95% associated with phase shifts greater than 3pi have been measured for injection-current densities below 1 A/cm(2) with a planar guiding structure and drive currents of approximately 10 mA for typical channel waveguides.
Delacourt
D
D
Blondeau
R
R
Brylinski
C
C
Forte-Poisson
M A
MA
Herschkorn
N
N
Kazmierski
C
C
Papuchon
M
M