Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering.
An experimental comparison is made between the losses of S bends fabricated by impurity-induced layer disordering in GaAs-AlAs superlattices. For parallel waveguides offset by 100 microm, transition lengths corresponding to 3-dB excess loss were found to be approximately 290 microm for approximately single-mode S bends in the form of a raised cosine and approximately 335 microm for bends in the form of two constant-radius-of-curvature sections. These buried-channel bends appear to have losses that compare favorably with those formed from rib waveguides.
Tang
T K
TK
Swanson
P D
PD
Givens
M E
ME
Detemple
T A
TA
Coleman
J J
JJ
White
I A
IA