Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features.
A III-V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A/cm(2) for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A/cm(2) for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of approximately 995 nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.
Palit
Sabarni
S
Department of Electrical and Computer Engineering, Duke University, Box 90291, Durham, North Carolina27708, USA. sp59@duke.edu
Kirch
Jeremy
J
Tsvid
Gene
G
Mawst
Luke
L
Kuech
Thomas
T
Jokerst
Nan Marie
NM