title: Amplitude and phase modulation by free-carrier injection in III-V semiconducting waveguides for the 10.6-microm wavelength.
abstract: We give experimental results for amplitude and phase modulation by free-carrier injection in planar and rib waveguides at a wavelength of 10.6 microm. These waveguides have been formed by metal-organic chemical-vapor deposition of InP and GalnAs layers on InP substrates. Absorptions of 95% associated with phase shifts greater than 3pi have been measured for injection-current densities below 1 A/cm(2) with a planar guiding structure and drive currents of approximately 10 mA for typical channel waveguides.
authors.forename: D
authors.initials: D
authors.lastname: Delacourt
authors.forename: R
authors.initials: R
authors.lastname: Blondeau
authors.forename: C
authors.initials: C
authors.lastname: Brylinski
authors.forename: M A
authors.initials: MA
authors.lastname: Forte-Poisson
authors.forename: N
authors.initials: N
authors.lastname: Herschkorn
authors.forename: C
authors.initials: C
authors.lastname: Kazmierski
authors.forename: M
authors.initials: M
authors.lastname: Papuchon