Theory for the temperature rise in optically bistable GaAs/AlGaAs étalons including diffraction, heat conduction, and carrier diffusion.
We report on a realistic model for optically bistable GaAs/AlGaAs Fabry-Perot étalons. The model incorporates diffraction, carrier diffusion, and heat conduction, taking all the layers of the structure into account. For the optical nonlinearity the carrier density and temperature-dependent plasma theory is used. Devices with less than a 1-K temperature rise should be possible to design.
Olin
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Sahlén
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