title: Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering.
abstract: An experimental comparison is made between the losses of S bends fabricated by impurity-induced layer disordering in GaAs-AlAs superlattices. For parallel waveguides offset by 100 microm, transition lengths corresponding to 3-dB excess loss were found to be approximately 290 microm for approximately single-mode S bends in the form of a raised cosine and approximately 335 microm for bends in the form of two constant-radius-of-curvature sections. These buried-channel bends appear to have losses that compare favorably with those formed from rib waveguides.
authors.forename: T K
authors.initials: TK
authors.lastname: Tang
authors.forename: P D
authors.initials: PD
authors.lastname: Swanson
authors.forename: M E
authors.initials: ME
authors.lastname: Givens
authors.forename: T A
authors.initials: TA
authors.lastname: Detemple
authors.forename: J J
authors.initials: JJ
authors.lastname: Coleman
authors.forename: I A
authors.initials: IA
authors.lastname: White