title: Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe.
abstract: We present a new model, which incorporates both temperature and electron-hole effects, for two-beam coupling in photorefractive semiconductors under an external dc field E(0). We show that the exponential gain ? exhibits an intensity-dependent resonance. The application of this model to InP:Fe allows us to predict a value of ? near 20 cm(-1) for a thin sample at 1.06 microm with E(0) = 10 kV/cm.
authors.forename: G
authors.initials: G
authors.lastname: Picoli
authors.forename: P
authors.initials: P
authors.lastname: Gravey
authors.forename: C
authors.initials: C
authors.lastname: Ozkul