title: Highly efficient crossing structure for silicon-on-insulator waveguides.
abstract: A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2 dB and crosstalk and reflection losses below 40 dB in a broad bandwidth of 20 nm. Furthermore, the resulting crossing structure has a footprint of only 6x6 microm(2) and does not require any additional fabrication steps.
authors.affiliation: Valencia Nanophotonics Technology Center, Universidad Politécnica de Valencia, Camino de Vera, s/n,46022, Valencia, Spain. pabsanki@ntc.upv.es
authors.forename: Pablo
authors.initials: P
authors.lastname: Sanchis
authors.forename: Pablo
authors.initials: P
authors.lastname: Villalba
authors.forename: Francisco
authors.initials: F
authors.lastname: Cuesta
authors.forename: Andreas
authors.initials: A
authors.lastname: Håkansson
authors.forename: Amadeu
authors.initials: A
authors.lastname: Griol
authors.forename: José V
authors.initials: JV
authors.lastname: Galán
authors.forename: Antoine
authors.initials: A
authors.lastname: Brimont
authors.forename: Javier
authors.initials: J
authors.lastname: Martí