An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K.
A new class of silicon-based light-emitting diode is demonstrated using InSb-quantum-dot-embedded Si containing the emissive {311} rod-like defects (RLDs). A narrow peak centered at 1377 nm (900 meV) characteristic of the {311} RLDs was found to develop out of an otherwise broad background electroluminescence (EL) upon the application of electric fields in the growth direction. Such electric-field-active EL was observed up to 150 K with a slight downward shift of the peak energies, accompanied by an anomaly in the thermal roll-off of the EL intensity. Spectral variations with temperature and electric field indicate a switching of dominance between the closely correlated defect states that are responsible for the EL emission.
Yasutake
Yuhsuke
Y
Graduate School of Arts and Sciences, University of Tokyo, Komaba, Meguro, Tokyo 153-8902, Japan.
Igarashi
Jun
J
Tana-ami
Norishige
N
Fukatsu
Susumu
S