title: Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures.
abstract: An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structure on top of a distributed Bragg reflector, all grown by molecular-beam epitaxy. A modulation of approximately 60% is obtained on our test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.
authors.forename: K K
authors.initials: KK
authors.lastname: Law
authors.forename: J
authors.initials: J
authors.lastname: Maserjian
authors.forename: R J
authors.initials: RJ
authors.lastname: Simes
authors.forename: L A
authors.initials: LA
authors.lastname: Coldren
authors.forename: A C
authors.initials: AC
authors.lastname: Gossard
authors.forename: J L
authors.initials: JL
authors.lastname: Merz