Control of spin precession in a spin-injected field effect transistor.
Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.
Koo
Hyun Cheol
HC
Center for Spintronics Research, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136-791, Korea.
Kwon
Jae Hyun
JH
Eom
Jonghwa
J
Chang
Joonyeon
J
Han
Suk Hee
SH
Johnson
Mark
M