title: Etching of graphene devices with a helium ion beam.
abstract: We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
authors.affiliation: Department of Physics, Harvard University, Cambridge, MA 02138, USA.
authors.forename: Max C
authors.initials: MC
authors.lastname: Lemme
authors.forename: David C
authors.initials: DC
authors.lastname: Bell
authors.forename: James R
authors.initials: JR
authors.lastname: Williams
authors.forename: Lewis A
authors.initials: LA
authors.lastname: Stern
authors.forename: Britton W H
authors.initials: BW
authors.lastname: Baugher
authors.forename: Pablo
authors.initials: P
authors.lastname: Jarillo-Herrero
authors.forename: Charles M
authors.initials: CM
authors.lastname: Marcus