Low-loss semiconductor waveguide bends.
An experimental comparison is made between the losses of waveguide bends in disorder-delineated waveguides in semiconductor superlattices composed of GaAs and AlAs layers for simple abrupt bends and abrupt bends with an additional half-angle guiding wall proposed by Shiina et al. [Opt. Lett. 11, 736 (1986)]. For light above the band gap of bulk GaAs, the abrupt and Shiina bends were found to have to 3-dB loss angles of 3 and 7 deg, respectively. This improved performance suggests that the specific geometry of the bends is yet another degree of freedom in designing guiding structure for planar routing.
Swanson
P D
PD
Julien
F
F
Emanuel
M A
MA
Sloan
L
L
Tang
T
T
Detemple
T A
TA
Coleman
J J
JJ