title: An electric-field-active 1377-nm narrow-line Si light-emitting diode at 150 K.
abstract: A new class of silicon-based light-emitting diode is demonstrated using InSb-quantum-dot-embedded Si containing the emissive {311} rod-like defects (RLDs). A narrow peak centered at 1377 nm (900 meV) characteristic of the {311} RLDs was found to develop out of an otherwise broad background electroluminescence (EL) upon the application of electric fields in the growth direction. Such electric-field-active EL was observed up to 150 K with a slight downward shift of the peak energies, accompanied by an anomaly in the thermal roll-off of the EL intensity. Spectral variations with temperature and electric field indicate a switching of dominance between the closely correlated defect states that are responsible for the EL emission.
authors.affiliation: Graduate School of Arts and Sciences, University of Tokyo, Komaba, Meguro, Tokyo 153-8902, Japan.
authors.forename: Yuhsuke
authors.initials: Y
authors.lastname: Yasutake
authors.forename: Jun
authors.initials: J
authors.lastname: Igarashi
authors.forename: Norishige
authors.initials: N
authors.lastname: Tana-ami
authors.forename: Susumu
authors.initials: S
authors.lastname: Fukatsu