Nd:LiTaO(3) waveguide laser.
Waveguide lasers operating near 1092 and 1076 nm were fabricated in Z-cut Nd-Ti codiffused LiTaO(3). The Nd diffusion was at 14000 degrees C for 120 h. Samples from two wafers were examined. The Nd film starting thickness was 7 nm in wafer 1 and 15 nm in wafer 2. Ti stripes, 8-15 microm wide, were diffused at 1500 degrees C for 4 h for wafer 1 (130-nm stripe thickness) and 2 h forwafer 2 (100-nm stripe thickness). Pumping was at 750 nm. Threshold occurred at 330 mW of absorbedpump power for the best waveguides from wafer 1 and100 mW for the best waveguides from wafer 2. The slope efficiency of the latter was 0.07%.
Sanford
N A
NA
Aust
J A
JA
Malone
K J
KJ
Larson
D R
DR
Roshko
A
A