Making Mn substitutional impurities in InAs using a scanning tunneling microscope.
We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.
Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA. youngjae.song@nist.gov
Young Jae
YJ
Song
Steven C
SC
Erwin
Gregory M
GM
Rutter
Phillip N
PN
First
Nikolai B
NB
Zhitenev
Joseph A
JA
Stroscio
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008846:Micromanipulation / Q000379:methods*; D016252:Microscopy, Scanning Tunneling / Q000379:methods*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; D008345:Manganese; C076773:indium arsenide