Ultrafast VLS growth of epitaxial beta- Ga(2)O(3) nanowires.
Well-defined monoclinic nanostructures of beta- Ga(2)O(3) were grown in a chemical vapor deposition apparatus using metallic gallium and oxygen as sources. Stable growth conditions were deduced for nanorods, nanoribbons, nanowires and cones. The types of nanostructures are determined by the growth temperature. We suppose that the vapor-solid growth mechanism rules the growth of nanoribbons and rods. For the nanowires we observed catalytic gold droplets atop, characteristic for the VLS growth mechanism with an extremely high growth rate of up to 10 microm min(-1). Nanowires grown on Al(2)O(3) substrates showed an excellent tendency to grow epitaxially, mapping the hexagonal symmetry of Al(2)O(3)(0001).
Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria.
E
E
Auer
A
A
Lugstein
S
S
Löffler
Y J
YJ
Hyun
W
W
Brezna
E
E
Bertagnolli
P
P
Pongratz