The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.
We present a study of the growth, morphology and optical properties of Ga(x)In(1-x)P quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.
Gerhard
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S
Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Technische Physik, Universität Würzburg, Würzburg, Germany. Sven.Gerhard@physik.uni-wuerzburg.de
Baumann
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V
Höfling
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S
Forchel
A
A