Dopant distributions in n-MOSFET structure observed by atom probe tomography.
The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan. koji.inoue@hs3.ecs.kyoto-u.ac.jp
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K
Inoue
F
F
Yano
A
A
Nishida
H
H
Takamizawa
T
T
Tsunomura
Y
Y
Nagai
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M
Hasegawa