Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.
We report on the achievement of strong coherent emission from GaAs-based single-walled spiral microtubes, wherein photons are localized in an ultrathin (approximately lambda/25) region embedded with self-organized InGaAs quantum dots. The emission spectra measured at 300 K are characterized by a regular sequence of sharp optical modes with a maximum Q factor of approximately 2500 and separation of approximately 7 meV. The three-dimensional confinement of photons is made possible by the epitaxially smooth tube surface as well as an engineered surface geometry, achieved using a single photolithography step. The experimental results are analyzed using an equivalent planar dielectric waveguide model.
Li
Feng
F
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
Mi
Zetian
Z
Vicknesh
Sahmuganathan
S
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods; D055095:Optics and Photonics; D017785:Photons; D045663:Quantum Dots; D012666:Semiconductors; D013499:Surface Properties; D013696:Temperature
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium