Magnetoresistance of TVO temperature sensor at T<1 K.
A magnetoresistance (MR) of the well known TVO resistor temperature sensors has been studied at ultralow temperatures from approximately 0.8 K down to approximately 0.1 K under strong magnetic fields up to 8 T. A crossover from positive to negative MR with lowering temperature is found at weak magnetic fields. A zero MR-value at the magnetic field of 4 T, for example, is reached at T approximately 0.2 K. At sufficiently strong magnetic field the negative MR is suppressed and MR returns to positive values. A constant negative MR, which does not depend on the magnetic field from 2 to 8 T, is revealed at the lowest temperature T approximately 0.1 K. The observed behavior of the TVO sensor is explained basing on the model of hopping conduction via localized states in the weak localization regime.
Joint Institute for Nuclear Research, Dubna 141980, Russia.
Yu P
YP
Filippov
G G
GG
Ihas
V V
VV
Vainberg