Quasiparticle transformation during a metal-insulator transition in graphene.
Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Aaron
A
Bostwick
Jessica L
JL
McChesney
Konstantin V
KV
Emtsev
Thomas
T
Seyller
Karsten
K
Horn
Stephen D
SD
Kevan
Eli
E
Rotenberg