Use of time-resolved IR reflection and transmission as a probe of carrier dynamics in semiconductors.
We discuss the use of time-resolved IR reflection and transmission for studying semiconductor carrier dynamics. We solve Maxwell's equations for a nonhomogeneous carrier distribution in the limit of small perturbation. We show that the IR probe is sensitive to the spatial profile of the carrier density far below the surface. We present results of measurements for InP:Fe that demonstrate the advantages of this technique.
Miranda
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RS
Tom
H W
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Johnson
A M
AM
Bridges
T J
TJ
Aumiller
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