Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.
We report on the achievement of strong coherent emission from GaAs-based single-walled spiral microtubes, wherein photons are localized in an ultrathin (approximately lambda/25) region embedded with self-organized InGaAs quantum dots. The emission spectra measured at 300 K are characterized by a regular sequence of sharp optical modes with a maximum Q factor of approximately 2500 and separation of approximately 7 meV. The three-dimensional confinement of photons is made possible by the epitaxially smooth tube surface as well as an engineered surface geometry, achieved using a single photolithography step. The experimental results are analyzed using an equivalent planar dielectric waveguide model.
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
Feng
F
Li
Zetian
Z
Mi
Sahmuganathan
S
Vicknesh
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures; D036103:Nanotechnology / Q000379:methods; D055095:Optics and Photonics; D017785:Photons; D045663:Quantum Dots; D012666:Semiconductors; D013499:Surface Properties; D013696:Temperature
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium