Quasiparticle transformation during a metal-insulator transition in graphene.
Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
Bostwick
Aaron
A
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
McChesney
Jessica L
JL
Emtsev
Konstantin V
KV
Seyller
Thomas
T
Horn
Karsten
K
Kevan
Stephen D
SD
Rotenberg
Eli
E