A nanosized photodetector fabricated by electron-beam-induced deposition.
A sensitive nanosized molybdenum oxide (MoO(x)) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO(x) had a conductivity approximately 300 S cm(-1). After 2 h annealing at 573 K, the conductivity of nanowires decreased 10 times to approximately 30 S cm(-1) and MoO(x) had photoconductivity. Nanosized MoO(x) wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-3003, Ibaraki, Japan. Makise.Kazumasa@nims.go.jp
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Makise
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Mitsuishi
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Shimojo
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Furuya