Making Mn substitutional impurities in InAs using a scanning tunneling microscope.
We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.
Song
Young Jae
YJ
Center for Nanoscale Science and Technology, NIST, Gaithersburg, Maryland 20899, USA. youngjae.song@nist.gov
Erwin
Steven C
SC
Rutter
Gregory M
GM
First
Phillip N
PN
Zhitenev
Nikolai B
NB
Stroscio
Joseph A
JA
D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008345:Manganese / Q000737:chemistry*; D008422:Materials Testing; D008846:Micromanipulation / Q000379:methods*; D016252:Microscopy, Scanning Tunneling / Q000379:methods*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; D007204:Indium; D008345:Manganese; C076773:indium arsenide