Mapping active dopants in single silicon nanowires using off-axis electron holography.
We demonstrate that state-of-the-art off-axis electron holography can be used to map active dopants in silicon nanowires as thin as 60 nm with 10 nm spatial resolution. Experiment and simulation demonstrate that doping concentrations of 10(19) and 10(20) cm(-3) can be measured with a detection threshold of 10(18) cm(-3) with respect to intrinsic silicon. Comparison of experimental data and simulations allows an estimation of the charge density at the wire-oxide interface of -1 x 10(12) electron charges cm(-2). Off-axis electron holography thus offers unique capabilities for a detailed analysis of active dopant concentrations in nanostructures.
INAC/SP2M/LEMMA, LETI, GEM Minatec, 17 rue des Martyrs, 38052 Grenoble Cedex 9, France. martien.den-hertog@grenoble.cnrs.fr
Martien I
MI
den Hertog
Heinz
H
Schmid
David
D
Cooper
Jean-Luc
JL
Rouviere
Mikael T
MT
Björk
Heike
H
Riel
Pierrette
P
Rivallin
Siegfried
S
Karg
Walter
W
Riess