title: Dip-pen lithography of ferroelectric PbTiO(3) nanodots.
abstract: Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of approximately 37 nm on a Nb-doped SrTiO(3) substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.
authors.affiliation: Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: Jong Yeog
authors.initials: JY
authors.lastname: Son
authors.forename: Young-Han
authors.initials: YH
authors.lastname: Shin
authors.forename: Sangwoo
authors.initials: S
authors.lastname: Ryu
authors.forename: Hyungjun
authors.initials: H
authors.lastname: Kim
authors.forename: Hyun M
authors.initials: HM
authors.lastname: Jang