title: Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties.
abstract: Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO(x)) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO(x) shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO(x) nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO(x) shell acts as an effective insulating layer. The ZnTe-SiO(x) nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.
authors.affiliation: Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
authors.forename: Y L
authors.initials: YL
authors.lastname: Cao
authors.forename: Y B
authors.initials: YB
authors.lastname: Tang
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: Z T
authors.initials: ZT
authors.lastname: Liu
authors.forename: L B
authors.initials: LB
authors.lastname: Luo
authors.forename: Z B
authors.initials: ZB
authors.lastname: He
authors.forename: J S
authors.initials: JS
authors.lastname: Jie
authors.forename: Roy
authors.initials: R
authors.lastname: Vellaisamy
authors.forename: W J
authors.initials: WJ
authors.lastname: Zhang
authors.forename: C S
authors.initials: CS
authors.lastname: Lee
authors.forename: S T
authors.initials: ST
authors.lastname: Lee