High performance photodetectors of individual InSe single crystalline nanowire.
A simple method was introduced to synthesize nanomaterials of a new metal selenide, InSe nanowires (NWs). The NWs had diameters ranging from 60 to 250 nm and lengths from several micrometers to tens of micrometers. The photoresponse characteristics of InSe NWs were investigated by fabricating devices based on an individual NW. With the light irradiation on and off, the current of the device could be switched at "high" and "low" current with the "ON/OFF" ratio as high as 50. Moreover, the high stability of the InSe NWs was demonstrated indicating the bright future of NWs for low cost, ultrahigh density nanometer sized photoelectric devices.
Wang
Jian-Jun
JJ
Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Cao
Fei-Fei
FF
Jiang
Lang
L
Guo
Yu-Guo
YG
Hu
Wen-Ping
WP
Wan
Li-Jun
LJ