Dip-pen lithography of ferroelectric PbTiO(3) nanodots.
Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of approximately 37 nm on a Nb-doped SrTiO(3) substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.
Son
Jong Yeog
JY
Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology, Pohang 790-784, Korea.
Shin
Young-Han
YH
Ryu
Sangwoo
S
Kim
Hyungjun
H
Jang
Hyun M
HM