title: Difference-frequency mixing in AgGaS(2) by use of a high-power GaAlAs tapered semiconductor amplifier at 860 nm.
abstract: As much as 47 microW of cw infrared radiation and 89 microW of pulsed infrared radiation, tunable near 4.3 microm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al(2)O(3) laser at 715 nm (pump wave) in AgGaS(2). The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.
authors.forename: U
authors.initials: U
authors.lastname: Simon
authors.forename: F K
authors.initials: FK
authors.lastname: Tittel
authors.forename: L
authors.initials: L
authors.lastname: Goldberg