Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.
A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.
Lee
Myeongwon
M
Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701, Korea.
Koo
Jamin
J
Chung
Eun-Ae
EA
Jeong
Dong-Young
DY
Koo
Yong-Seo
YS
Kim
Sangsig
S