Optimized structural designs for stretchable silicon integrated circuits.
Materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to approximately 90%. Simple circuits, including complementary metal-oxide-semiconductor inverters and n-type metal-oxide-semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.
Kim
Dae-Hyeong
DH
Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
Liu
Zhuangjian
Z
Kim
Yun-Soung
YS
Wu
Jian
J
Song
Jizhou
J
Kim
Hoon-Sik
HS
Huang
Yonggang
Y
Hwang
Keh-Chih
KC
Zhang
Yongwei
Y
Rogers
John A
JA
D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods*; D055119:Elastic Modulus; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008904:Miniaturization; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
D012825:Silicon