Catalyst preparation for CMOS-compatible silicon nanowire synthesis.
Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not compatible with standard CMOS (complementary metal oxide semiconductor) fabrication processes. Nanowire synthesis with those metals that are CMOS compatible, such as aluminium and copper, necessitate temperatures higher than 450 degrees C, which is the maximum temperature allowed in CMOS processing. Here, we demonstrate that the synthesis temperature of silicon nanowires using copper-based catalysts is limited by catalyst preparation. We show that the appropriate catalyst can be produced by chemical means at temperatures as low as 400 degrees C. This is achieved by oxidizing the catalyst precursor, contradicting the accepted wisdom that oxygen prevents metal-catalysed nanowire growth. By simultaneously solving material compatibility and temperature issues, this catalyst synthesis could represent an important step towards real-world applications of semiconductor nanowires.
Renard
Vincent T
VT
CEA, LETI, MINATEC, F38054 Grenoble, France.
Jublot
Michael
M
Gergaud
Patrice
P
Cherns
Peter
P
Rouchon
Denis
D
Chabli
Amal
A
Jousseaume
Vincent
V