Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties.
Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO(x)) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO(x) shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO(x) nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO(x) shell acts as an effective insulating layer. The ZnTe-SiO(x) nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.
Cao
Y L
YL
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
Tang
Y B
YB
Liu
Y
Y
Liu
Z T
ZT
Luo
L B
LB
He
Z B
ZB
Jie
J S
JS
Vellaisamy
Roy
R
Zhang
W J
WJ
Lee
C S
CS
Lee
S T
ST