title: Self-frequency-doubled KTiOAsO4 Raman laser emitting at 573 nm.
abstract: A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671 cm(-1) Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1146 nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573 nm yellow laser is obtained. With an incident diode power of 10.9 W and a pulse repetition rate of 20.8 kHz, a yellow-laser power of 0.82 W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%.
authors.affiliation: School of Information Science and Engineering, Shandong University, Jinan, China.
authors.forename: Zhaojun
authors.initials: Z
authors.lastname: Liu
authors.forename: Qingpu
authors.initials: Q
authors.lastname: Wang
authors.forename: Xingyu
authors.initials: X
authors.lastname: Zhang
authors.forename: Sasa
authors.initials: S
authors.lastname: Zhang
authors.forename: Jun
authors.initials: J
authors.lastname: Chang
authors.forename: Shuzhen
authors.initials: S
authors.lastname: Fan
authors.forename: Wenjia
authors.initials: W
authors.lastname: Sun
authors.forename: Guofan
authors.initials: G
authors.lastname: Jin
authors.forename: Xutang
authors.initials: X
authors.lastname: Tao
authors.forename: Youxuan
authors.initials: Y
authors.lastname: Sun
authors.forename: Shaojun
authors.initials: S
authors.lastname: Zhang
authors.forename: Zejin
authors.initials: Z
authors.lastname: Liu