title: GaSb/GaAs type-II quantum dots grown by droplet epitaxy.
abstract: We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs(001) substrate by droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size distribution of the QDs are confirmed using atomic force and transmission electron microscope images. A staggered type-II QD band structure is suggested by a photoluminescence peak that is blue shifted with increasing excitation intensity, a large emission polarization of 60%, and a long carrier decay time of 11.5 ns. Our research provides a different approach to fabricating high quality GaSb type-II QDs.
authors.affiliation: Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA. bliang@ee.ucla.edu
authors.forename: Baolai
authors.initials: B
authors.lastname: Liang
authors.forename: Andrew
authors.initials: A
authors.lastname: Lin
authors.forename: Nicola
authors.initials: N
authors.lastname: Pavarelli
authors.forename: Charles
authors.initials: C
authors.lastname: Reyner
authors.forename: Jun
authors.initials: J
authors.lastname: Tatebayashi
authors.forename: Kalyan
authors.initials: K
authors.lastname: Nunna
authors.forename: Jun
authors.initials: J
authors.lastname: He
authors.forename: Tomasz J
authors.initials: TJ
authors.lastname: Ochalski
authors.forename: Guillaume
authors.initials: G
authors.lastname: Huyet
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker