Thermoelectric effect across the metal-insulator domain walls in VO2 microbeams.
We report on measurements of Seebeck effect in single-crystal VO(2) microbeams across their metal-insulator phase transition. One-dimensionally aligned metal-insulator domain walls were reversibly created and eliminated along single VO(2) beams by varying temperature, which allows for accurate extraction of the net contribution to the Seebeck effect from these domain walls. We observed significantly lower Seebeck coefficient in the metal-insulator coexisting regime than predicted by a linear combination of contributions from the insulator and metal domains. This indicates that the net contribution of the domain walls has an opposite sign from that of the insulator and metal phases separately. Possible origins that may be responsible for this unexpected effect were discussed in the context of complications in this correlated electron material.
Cao
J
J
Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA.
Fan
W
W
Zheng
H
H
Wu
J
J
D017097:Electric Impedance; D004563:Electrochemistry / Q000379:methods*; D055617:Micro-Electrical-Mechanical Systems; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D013314:Stress, Mechanical; D013696:Temperature; D017968:Vanadium Compounds / Q000737:chemistry*
D017968:Vanadium Compounds; C066075:vanadium pentoxide