Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating.
We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm(2) V(-1) s(-1), which was higher by a factor of approximately 8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.
Yang
Chanwoo
C
Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea.
Hong
Kipyo
K
Jang
Jaeyoung
J
Chung
Dae Sung
DS
An
Tae Kyu
TK
Choi
Woon-Seop
WS
Park
Chan Eon
CE