Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements.
We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where Ga(x)In(1-x)As is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/Ga(x)In(1-x)As/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.
Krogstrup
Peter
P
Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Denmark. krogstrup@fys.ku.dk
Yamasaki
Jun
J
Sørensen
Claus B
CB
Johnson
Erik
E
Wagner
Jakob B
JB
Pennington
Robert
R
Aagesen
Martin
M
Tanaka
Nobuo
N
Nygård
Jesper
J