Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001).
We describe a microreflectance difference (microRD) spectrometer based on a charge coupled device (CCD), in contrast to most common RD spectrometers that are based on a photomultiplier or a photodiode as a light detector. The advantage of our instrument over others is the possibility to isolate the RD spectrum of specific areas of the sample; thus topographic maps of the surface can be obtained. In our setup we have a maximum spatial resolution of approximately 2.50 microm x 2.50 microm and a spectral range from 1.2 to 5.5 eV. To illustrate the performance of the spectrometer, we have measured strains in mechanically polished GaAs (001) single crystals.
Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, 78000 San Luis Potosí, San Luis Potosí, México. lflm@cactus.iico.uaslp.mx
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Lastras-Martínez
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Castro-García
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Balderas-Navarro
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Lastras-Martínez