Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'.
We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.
Lin
Juhn-Jong
JJ
Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. jjlin@mail.nctu.edu.tw
Wu
Chih-Yuan
CY