Carrier deficit from the nominal threshold density and mode-suppression ratio of an above-threshold biased semiconductor laser.
An analytical expression for the carrier deficit DeltaN from the nominal threshold carrier density N(t) of an above-threshold biased semiconductor laser has been deduced. As a result, both the mode spectra and the mode-suppression ratio of a semiconductor laser can be studied analytically. The measured dependence of the mode-suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser confirms the theoretical predictions.
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Xia
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Wu
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Chen
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Lu