Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'.
We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.
Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan. jjlin@mail.nctu.edu.tw
Juhn-Jong
JJ
Lin
Chih-Yuan
CY
Wu