Superconducting transition in Nb nanowires fabricated using focused ion beam.
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below T(c). This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
Tettamanzi
G C
GC
School of Physics, University of Melbourne, Victoria 3010, Australia. G.C.Tettamanzi@tudelft.nl
Pakes
C I
CI
Potenza
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A
Rubanov
S
S
Marrows
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CH
Prawer
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