Infrared waveguiding in Si(1-x-y)Ge(x)C(y) upon silicon.
Polarization-independent waveguiding at 1.32 and 1.54 microm was observed in single-crystal S(1-x-y)Ge(x)C(y) grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 microm. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93-0.99-eV range, in agreement with theory.
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Soref
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Atzman
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Shaapur
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M
Robinson
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Westhoff