Kinetically induced kinking of vapor-liquid-solid grown epitaxial si nanowires.
Epitaxial Si nanowires grown from Au seeds using the vapor-liquid-solid method begin growing normal to the Si(111) substrate atop a tapered base. After a kinetically determined length, the NWs may kink away from [111] to another crystallographic direction. The smallest NWs prefer growth along 110 while larger Si NWs choose either 111 or 112 based on whether growth conditions favor Au-free sidewalls. "Vertical" growth normal to the Si(111) substrate is obtained only for slowly growing NWs with Au-decorated sidewalls. At the fastest growth rates, single-crystal Si NWs smoothly, continuously, and randomly vary their growth directions, producing a morphology that is qualitatively different than highly kinked growth.
School of Materials, Department of Physics, Arizona State University, Tempe, Arizona 85287, USA.
Prashanth
P
Madras
Eric
E
Dailey
Jeff
J
Drucker