Self-limited self-perfection by liquefaction for sub-20 nm trench/line fabrication.
We proposed and demonstrated a new approach to pressed self-perfection by liquefaction (P-SPEL), where a layer of SiO2 is used as a stopper on one sidewall of gratings, to self-limit the final trench width in P-SPEL to a preset stopper layer thickness, allowing a precise control of the final trench width without the need to control any pressing parameters such as pressure, temperature and the gap between the pressing plate and the substrate. We achieved 20 nm wide trenches from a 90 nm original width, reducing the original trench by 450%. We also observed improvement in the trench width uniformity. Using the fabricated resist trenches as templates, 20 nm metal lines were achieved by lift-off.
Liang
Yixing
Y
NanoStructure Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
Murphy
Patrick
P
Li
Wen-Di
WD
Chou
Stephen Y
SY