Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.
We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In(0.53)Ga(0.47)As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of approximately 12 microW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.
Williams
Kimani K
KK
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA. kimani_williams@umail.ucsb.edu
Taylor
Z D
ZD
Suen
J Y
JY
Lu
Hong
H
Singh
R S
RS
Gossard
A C
AC
Brown
E R
ER
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D005336:Fiber Optic Technology; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007909:Lenses; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry; D015233:Models, Statistical; D053761:Nanocomposites / Q000737:chemistry; D055095:Optics and Photonics; D010777:Photochemistry / Q000379:methods; D012666:Semiconductors; D013696:Temperature; D014159:Transducers
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium