Forced TM-mode operation of a GaAlAs laser diode by use of annealed proton-exchanged LiNbO(3) and LiTaO(3) waveguides.
Forced TM-mode operation of GaAlAs laser diode by use of annealed proton-exchanged LiNbO(3) and LiTaO(3) waveguides as the polarizing element in an external cavity is demonstrated. The results are compared with those for an external cavity that uses a bulk polarizer. The dependence of such factors as the amount and polarization of the feedback in these external cavity configurations is discussed.
J M
JM
Chwalek