Photocurrents in photoconductive semiconductors generated by a moving space-charge field.
The behavior of photocurrents generated in the semiconductors InP:Fe, GaAs:Cr, and undoped GaAs inoptical two-wave mixing experiments as a function of the frequency difference between the two waves is characterized and verified experimentally. The sign, the concentration, and the ratio gammaR/micro of the dominant charge carriers and the effective concentration of trapping centers can be found from this dependence.
F M
FM
Davidson
C C
CC
Wang
C T
CT
Field
S
S
Trivedi