Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion.
We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 microm wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resulting in an integrated monolithic gain mirror. An intracavity wedged diamond heat-spreader capillary bonded to the gain chip provides efficient heat removal from the gain structure without disturbing the spectrum of the mode-locked laser. The laser produces over 0.6 W of average output power at 15 degrees C with 16 ps pulse width. The total output power accounting for all output beams emerging from the cavity was 0.86 W. The results reveal an essential advantage of wafer fusion processing of disparate materials over monolithically grown InP-based gain structures and demonstrate the high potential of this technique for power scaling of long-wavelength semiconductor disk lasers.
Saarinen
Esa J
EJ
Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. esa.j.saarinen@tut.fi
Puustinen
Janne
J
Sirbu
Alexei
A
Mereuta
Alexandru
A
Caliman
Andrei
A
Kapon
Eli
E
Okhotnikov
Oleg G
OG