Toward a 1550 nm InGaAs photoconductive switch for terahertz generation.
We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In(0.53)Ga(0.47)As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of approximately 12 microW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA. kimani_williams@umail.ucsb.edu
Kimani K
KK
Williams
Z D
ZD
Taylor
J Y
JY
Suen
Hong
H
Lu
R S
RS
Singh
A C
AC
Gossard
E R
ER
Brown
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D005336:Fiber Optic Technology; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007909:Lenses; D008027:Light; D053768:Metal Nanoparticles / Q000737:chemistry; D015233:Models, Statistical; D053761:Nanocomposites / Q000737:chemistry; D055095:Optics and Photonics; D010777:Photochemistry / Q000379:methods; D012666:Semiconductors; D013696:Temperature; D014159:Transducers
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium