Carrier deficit from the nominal threshold density and mode-suppression ratio of an above-threshold biased semiconductor laser.
An analytical expression for the carrier deficit DeltaN from the nominal threshold carrier density N(t) of an above-threshold biased semiconductor laser has been deduced. As a result, both the mode spectra and the mode-suppression ratio of a semiconductor laser can be studied analytically. The measured dependence of the mode-suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser confirms the theoretical predictions.
Xia
G
G
Wu
Z
Z
Chen
J
J
Lu
Y
Y