Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating.
We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm(2) V(-1) s(-1), which was higher by a factor of approximately 8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.
Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea.
Chanwoo
C
Yang
Kipyo
K
Hong
Jaeyoung
J
Jang
Dae Sung
DS
Chung
Tae Kyu
TK
An
Woon-Seop
WS
Choi
Chan Eon
CE
Park