Tunable UV generation at 286 nm by frequency tripling of a high-power mode-locked semiconductor laser.
We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplif ier gain element. The 429-nm second harmonic produced by a KNbO(3) crystal was sum-frequency mixed with the 858-nm fundamental in a Li(3)BO(5) crystal, generating as much as 50 microW of power at 286 nm.
Goldberg
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Kliner
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