Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.
Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4).
Kumaran
Raveen
R
Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, British Columbia V6T 1Z4 Canada. raveen@phas.ubc.ca
Webster
Scott E
SE
Penson
Shawn
S
Li
Wei
W
Tiedje
Thomas
T
Wei
Peng
P
Schiettekatte
Francois
F