Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.
Farmer
Damon B
DB
IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA. dfarmer@us.ibm.com
Chiu
Hsin-Ying
HY
Lin
Yu-Ming
YM
Jenkins
Keith A
KA
Xia
Fengnian
F
Avouris
Phaedon
P
D003198:Computer Simulation; D017097:Electric Impedance; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D011108:Polymers / Q000737:chemistry*; D014173:Transistors, Electronic
D011108:Polymers; D006108:Graphite