Large area nanoscale patterning of silicon surfaces by parallel local oxidation.
The homogeneity and the reproducibility of parallel local oxidation have been improved by introducing a thin film of polymethylmethacrylate (PMMA) between the stamp and the silicon surface. The flexibility of the polymer film enables a homogeneous contact of the stamp with the silicon surface to be achieved. The oxides obtained yield better aspect ratios compared with the ones created with no PMMA layer. The pattern is formed when a bias voltage is applied between the stamp and the silicon surface for 1 min. The patterning can be done by a step and repeat technique and is reproducible across a centimetre length scale. Once the oxide nanostructures have been created, the polymer is removed by etching in acetone. Finally, parallel local oxidation is applied to fabricate silicon nanostructures and templates for the growth of organic molecules.
Losilla
N S
NS
Instituto de Microelectrónica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain.
Martínez
J
J
García
R
R