Homoleptic gadolinium guanidinate: a single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films.
Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd{((i)PrN)(2)CNMe(2)}(3)] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.
Milanov
Andrian P
AP
Ruhr-University Bochum, Universitaetsstr. 150, 44801 Bochum, Germany.
Thiede
Tobias B
TB
Devi
Anjana
A
Fischer
Roland A
RA