title: Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
abstract: We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA. dfarmer@us.ibm.com
authors.forename: Damon B
authors.initials: DB
authors.lastname: Farmer
authors.forename: Hsin-Ying
authors.initials: HY
authors.lastname: Chiu
authors.forename: Yu-Ming
authors.initials: YM
authors.lastname: Lin
authors.forename: Keith A
authors.initials: KA
authors.lastname: Jenkins
authors.forename: Fengnian
authors.initials: F
authors.lastname: Xia
authors.forename: Phaedon
authors.initials: P
authors.lastname: Avouris
mesh_terms: D003198:Computer Simulation; D017097:Electric Impedance; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D011108:Polymers / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D011108:Polymers; D006108:Graphite