Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS.
We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes within the device. Soft x-ray absorption techniques allowed isolated study of the different materials present in the device with 100 nm spatial resolution. The resulting morphology and structural changes reveal a picture of localized polarity-independent heating occurring within these devices initiated by and subsequently accelerating polarity-dependent electrochemical reduction/oxidation processes.
Strachan
John Paul
JP
Hewlett-Packard Labs, 1501 Page Mill Road, Palo Alto, CA 94304, USA.
Joshua Yang
J
J
Münstermann
Ruth
R
Scholl
Andreas
A
Medeiros-Ribeiro
Gilberto
G
Stewart
Duncan R
DR
Stanley Williams
R
R