title: Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes.
abstract: Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-defined memory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO) memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFET memories by assembling two top gates on individual nanotubes coated with ferroelectric thin films. Each bit of the nanotube transistor memory exhibits a controllable memory switching behavior induced by the reversible remnant polarization of the ferroelectric films, and its NDRO operation is demonstrated. The low driving voltage of 2 V, high carrier mobility over 1000 cm2 V(-1) s(-1), and potential ultrahigh integration density over 200 Gbit inch(-2) of the two-bit FeFET memory are highlighted in this paper.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: W Y
authors.initials: WY
authors.lastname: Fu
authors.forename: Z
authors.initials: Z
authors.lastname: Xu
authors.forename: L
authors.initials: L
authors.lastname: Liu
authors.forename: X D
authors.initials: XD
authors.lastname: Bai
authors.forename: E G
authors.initials: EG
authors.lastname: Wang