title: Enhancement of second-harmonic generation from silicon stripes under external cylindrical strain.
abstract: The enhanced second-harmonic (SH) generation from Si (111) stripes induced by external cylindrical strain is investigated. The dependence of the intensity of the strain-induced SH on the sample azimuth shows that the Si under cylindrical strain has 3m symmetry, which is similar to that of the Si (111) surface. Further studies indicate that the intensity of the enhanced SH is a quadratic function of the cylindrical strain within the magnitude that the Si stripe can bear. For the p-polarized and s-polarized SH, the intensities are, respectively, enhanced by 47.9% and 13% at epsilon(0)=2.93x10(-4). The enhancement of SH is due to the contributions from the strain-induced second-order nonlinear susceptibility chi(strain)(2) to the bulk dipole.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130023, China.
authors.forename: Ji-Hong
authors.initials: JH
authors.lastname: Zhao
authors.forename: Qi-Dai
authors.initials: QD
authors.lastname: Chen
authors.forename: Zhan-Guo
authors.initials: ZG
authors.lastname: Chen
authors.forename: Gang
authors.initials: G
authors.lastname: Jia
authors.forename: Wen
authors.initials: W
authors.lastname: Su
authors.forename: Ying
authors.initials: Y
authors.lastname: Jiang
authors.forename: Zhao-Xu
authors.initials: ZX
authors.lastname: Yan
authors.forename: T V
authors.initials: TV
authors.lastname: Dolgova
authors.forename: O A
authors.initials: OA
authors.lastname: Aktsipetrov
authors.forename: Hong-Bo
authors.initials: HB
authors.lastname: Sun