title: Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.
abstract: An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.
authors.affiliation: Institute of Electronic Materials and Devices, Leibniz University of Hannover, Appelstrasse 11A, D-30167 Hannover, Germany. laha@mbe.uni-hannover.de
authors.forename: Apurba
authors.initials: A
authors.lastname: Laha
authors.forename: E
authors.initials: E
authors.lastname: Bugiel
authors.forename: M
authors.initials: M
authors.lastname: Jestremski
authors.forename: R
authors.initials: R
authors.lastname: Ranjith
authors.forename: A
authors.initials: A
authors.lastname: Fissel
authors.forename: H J
authors.initials: HJ
authors.lastname: Osten