title: Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS.
abstract: We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes within the device. Soft x-ray absorption techniques allowed isolated study of the different materials present in the device with 100 nm spatial resolution. The resulting morphology and structural changes reveal a picture of localized polarity-independent heating occurring within these devices initiated by and subsequently accelerating polarity-dependent electrochemical reduction/oxidation processes.
authors.affiliation: Hewlett-Packard Labs, 1501 Page Mill Road, Palo Alto, CA 94304, USA.
authors.forename: John Paul
authors.initials: JP
authors.lastname: Strachan
authors.forename: J
authors.initials: J
authors.lastname: Joshua Yang
authors.forename: Ruth
authors.initials: R
authors.lastname: Münstermann
authors.forename: Andreas
authors.initials: A
authors.lastname: Scholl
authors.forename: Gilberto
authors.initials: G
authors.lastname: Medeiros-Ribeiro
authors.forename: Duncan R
authors.initials: DR
authors.lastname: Stewart
authors.forename: R
authors.initials: R
authors.lastname: Stanley Williams