Enhancement of second-harmonic generation from silicon stripes under external cylindrical strain.
The enhanced second-harmonic (SH) generation from Si (111) stripes induced by external cylindrical strain is investigated. The dependence of the intensity of the strain-induced SH on the sample azimuth shows that the Si under cylindrical strain has 3m symmetry, which is similar to that of the Si (111) surface. Further studies indicate that the intensity of the enhanced SH is a quadratic function of the cylindrical strain within the magnitude that the Si stripe can bear. For the p-polarized and s-polarized SH, the intensities are, respectively, enhanced by 47.9% and 13% at epsilon(0)=2.93x10(-4). The enhancement of SH is due to the contributions from the strain-induced second-order nonlinear susceptibility chi(strain)(2) to the bulk dipole.
Zhao
Ji-Hong
JH
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130023, China.
Chen
Qi-Dai
QD
Chen
Zhan-Guo
ZG
Jia
Gang
G
Su
Wen
W
Jiang
Ying
Y
Yan
Zhao-Xu
ZX
Dolgova
T V
TV
Aktsipetrov
O A
OA
Sun
Hong-Bo
HB