title: Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.
abstract: Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4).
authors.affiliation: Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, British Columbia V6T 1Z4 Canada. raveen@phas.ubc.ca
authors.forename: Raveen
authors.initials: R
authors.lastname: Kumaran
authors.forename: Scott E
authors.initials: SE
authors.lastname: Webster
authors.forename: Shawn
authors.initials: S
authors.lastname: Penson
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Thomas
authors.initials: T
authors.lastname: Tiedje
authors.forename: Peng
authors.initials: P
authors.lastname: Wei
authors.forename: Francois
authors.initials: F
authors.lastname: Schiettekatte