title: Tunable Fano interference in intersubband absorption.
abstract: New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers.
authors.forename: J
authors.initials: J
authors.lastname: Faist
authors.forename: C
authors.initials: C
authors.lastname: Sirtori
authors.forename: F
authors.initials: F
authors.lastname: Capasso
authors.forename: S N
authors.initials: SN
authors.lastname: Chu
authors.forename: L N
authors.initials: LN
authors.lastname: Pfeiffer
authors.forename: K W
authors.initials: KW
authors.lastname: West