title: Homoleptic gadolinium guanidinate: a single source precursor for metal-organic chemical vapor deposition of gadolinium nitride thin films.
abstract: Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd{((i)PrN)(2)CNMe(2)}(3)] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.
authors.affiliation: Ruhr-University Bochum, Universitaetsstr. 150, 44801 Bochum, Germany.
authors.forename: Andrian P
authors.initials: AP
authors.lastname: Milanov
authors.forename: Tobias B
authors.initials: TB
authors.lastname: Thiede
authors.forename: Anjana
authors.initials: A
authors.lastname: Devi
authors.forename: Roland A
authors.initials: RA
authors.lastname: Fischer