Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.
An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.
Laha
Apurba
A
Institute of Electronic Materials and Devices, Leibniz University of Hannover, Appelstrasse 11A, D-30167 Hannover, Germany. laha@mbe.uni-hannover.de
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Jestremski
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Ranjith
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