Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa(1-x)N) nanorod arrays. The formation of InxGa(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay.
Hong
Chi-Chang
CC
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, Republic of China.
Ahn
Hyeyoung
H
Wu
Chen-Ying
CY
Gwo
Shangjr
S
D003116:Color; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000379:methods*; D049408:Luminescent Agents / Q000737:chemistry*; D008163:Luminescent Measurements / Q000379:methods*; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*
D049408:Luminescent Agents; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride