Single ZnO nanowire based high-performance field effect transistors (FETs).
The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were approximately 3.2 and approximately 7.4 nS, respectively. The field effect mobilities (micro(eff)) for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm2/V x s, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.
Park
Yong Kyu
YK
School of Semiconductor and Chemical Engineering, BK21 Centre for Future Energy Materials and Devices, Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561756, South Korea.
Umar
Ahmad
A
Kim
Jin-Seok
JS
Yang
H Y
HY
Lee
Jeong Su
JS
Hahn
Yoon-Bong
YB