Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.
We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics.
Xian
Xiaojun
X
Centre for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.
Yan
Kai
K
Zhou
Wei
W
Jiao
Liying
L
Wu
Zhongyun
Z
Liu
Zhongfan
Z