title: InAs/InSb nanowire heterostructures grown by chemical beam epitaxy.
abstract: We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn(2), and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux.
authors.affiliation: NEST, Scuola Normale Superiore and CNR-INFM, Piazza S. Silvestro 12, I-56127 Pisa, Italy. daniele.ercolani@sns.it
authors.forename: Daniele
authors.initials: D
authors.lastname: Ercolani
authors.forename: Francesca
authors.initials: F
authors.lastname: Rossi
authors.forename: Ang
authors.initials: A
authors.lastname: Li
authors.forename: Stefano
authors.initials: S
authors.lastname: Roddaro
authors.forename: Vincenzo
authors.initials: V
authors.lastname: Grillo
authors.forename: Giancarlo
authors.initials: G
authors.lastname: Salviati
authors.forename: Fabio
authors.initials: F
authors.lastname: Beltram
authors.forename: Lucia
authors.initials: L
authors.lastname: Sorba