Rectification, gating voltage, and interchannel communication of nanoslot arrays due to asymmetric entrance space charge polarization.
A nanoslot array with a uniform surface charge and height but with asymmetric slot entrances is shown to exhibit strong rectification, gating type current-voltage characteristics and a total current higher than the sum of isolated slots at a large voltage. Unlike previous reports of low-voltage current rectification within nanopores and nanochannels with a nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge polarization and interslot communication at only one of the two different entrances.
Yossifon
Gilad
G
Department of Chemical and Biomolecular Engineering, Center for Microfluidics and Medical Diagnostics, University of Notre Dame, Notre Dame, Indiana 46556, USA.
Chang
Yu-Chen
YC
Chang
Hsueh-Chia
HC
D004553:Electric Conductivity; D004563:Electrochemistry; D015640:Ion Channel Gating; D036103:Nanotechnology