Two-terminal nonvolatile memories based on single-walled carbon nanotubes.
Reproducible current hysteresis is observed in semiconducting single-walled carbon nanotubes (SWCNTs) measured in a two-terminal configuration without a gate electrode. On the basis of this hysteresis, a two-terminal nonvolatile memory is realized by applying voltage pulses of opposite polarities across the SWCNT. Charge trapping at the SWCNT/SiO(2) interface is proposed to account for the observed phenomena; this explanation is supported by the direct correlation between the switching behaviors and SWCNT carrier types. In particular, a change in dominant carrier type induced by adsorbates in air leads to the direct transition of hysteresis evolution in the same device, providing further evidence for the proposed mechanism.
Yao
Jun
J
Department of Bioengineering, Rice Quantum Institute, Rice University, Houston, Texas, USA.
Jin
Zhong
Z
Zhong
Lin
L
Natelson
Douglas
D
Tour
James M
JM
D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
D037742:Nanotubes, Carbon