title: High-efficiency diode-pumped Tm:GdLiF4 laser at 1.9 microm.
abstract: Continuous-wave laser action of a Tm-doped GdLiF(4) (GLF) crystal pumped by a laser diode is reported at room temperature. A comparative analysis of laser performance using GLF crystals with doping concentrations of 8 at. % and 12 at. % of Tm(3+) has been carried out. A maximum output power of 1.47 W with 57% slope efficiency and a wide tunability range from 1826 to 2054 nm have been obtained at 8% Tm doping level.
authors.affiliation: Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale della Recherche, and Dipartimento di Fisica del Politecnico di Milano, 20133 Milano, Italy. nicola.coluccelli@polimi.it
authors.forename: Nicola
authors.initials: N
authors.lastname: Coluccelli
authors.forename: Gianluca
authors.initials: G
authors.lastname: Galzerano
authors.forename: Francesco
authors.initials: F
authors.lastname: Cornacchia
authors.forename: Alberto
authors.initials: A
authors.lastname: Di Lieto
authors.forename: Mauro
authors.initials: M
authors.lastname: Tonelli
authors.forename: Paolo
authors.initials: P
authors.lastname: Laporta