title: Biaxial strain in graphene adhered to shallow depressions.
abstract: Measurements on graphene exfoliated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Gruneisen parameters of the phonons underlying the G and 2D bands under biaxial strain than previously reported. Interference modeling is used to determine the vertical position of the graphene and to calculate the optimum dielectric substrate stack for maximum Raman signal.
authors.affiliation: Department of Physics, 590 Commonwealth Avenue, The Boston University Photonics Center, 8 Saint Mary's Street, Boston University, Boston, Massachusetts 02215, USA.
authors.forename: Constanze
authors.initials: C
authors.lastname: Metzger
authors.forename: Sebastian
authors.initials: S
authors.lastname: Rémi
authors.forename: Mengkun
authors.initials: M
authors.lastname: Liu
authors.forename: Silvia V
authors.initials: SV
authors.lastname: Kusminskiy
authors.forename: Antonio H
authors.initials: AH
authors.lastname: Castro Neto
authors.forename: Anna K
authors.initials: AK
authors.lastname: Swan
authors.forename: Bennett B
authors.initials: BB
authors.lastname: Goldberg