title: Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.
abstract: We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa(1-x)N) nanorod arrays. The formation of InxGa(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay.
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, Republic of China.
authors.forename: Chi-Chang
authors.initials: CC
authors.lastname: Hong
authors.forename: Hyeyoung
authors.initials: H
authors.lastname: Ahn
authors.forename: Chen-Ying
authors.initials: CY
authors.lastname: Wu
authors.forename: Shangjr
authors.initials: S
authors.lastname: Gwo
mesh_terms: D003116:Color; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000379:methods*; D049408:Luminescent Agents / Q000737:chemistry*; D008163:Luminescent Measurements / Q000379:methods*; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*
chemical_list: D049408:Luminescent Agents; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride