title: Rectification, gating voltage, and interchannel communication of nanoslot arrays due to asymmetric entrance space charge polarization.
abstract: A nanoslot array with a uniform surface charge and height but with asymmetric slot entrances is shown to exhibit strong rectification, gating type current-voltage characteristics and a total current higher than the sum of isolated slots at a large voltage. Unlike previous reports of low-voltage current rectification within nanopores and nanochannels with a nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge polarization and interslot communication at only one of the two different entrances.
authors.affiliation: Department of Chemical and Biomolecular Engineering, Center for Microfluidics and Medical Diagnostics, University of Notre Dame, Notre Dame, Indiana 46556, USA.
authors.forename: Gilad
authors.initials: G
authors.lastname: Yossifon
authors.forename: Yu-Chen
authors.initials: YC
authors.lastname: Chang
authors.forename: Hsueh-Chia
authors.initials: HC
authors.lastname: Chang
mesh_terms: D004553:Electric Conductivity; D004563:Electrochemistry; D015640:Ion Channel Gating; D036103:Nanotechnology