TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.
The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the 111 direction. NW with higher Mn concentrations grow along the 110 direction and reveal a branching structure. The main nanowire and branches grow along the 110 directions belonging to only one {111} plane.
Dłuzewski
P
P
Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46 02-668 Warsaw, Poland. dluzew@ifpan.edu.pl
Sadowski
J
J
Kret
S
S
Dabrowski
J
J
Sobczak
K
K