Probing individual quantum dots: noise in self-assembled systems.
In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
Vicaro
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Instituto de Fisica Gleb Wataghin, CP 6165, Universidade Estadual de Campinas-UNICAMP, 13083-970, Campinas, SP, Brazil.
Gutiérrez
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HR
Seabra
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Schulz
P A
PA
Cotta
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MA
D003198:Computer Simulation; D017076:Computer-Aided Design; D003627:Data Interpretation, Statistical; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D015233:Models, Statistical; D045663:Quantum Dots; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity