title: Microstructural study of the polymorphic transformation in pentacene thin films.
abstract: We have observed, by high-resolution cross-sectional transmission electron microscopy, the first direct evidence of polymorphic transformation in pentacene thin films deposited on silicon oxide substrates. Polymorphic transformation from the thin-film phase to the bulk phase occurred preferentially near polycrystalline grain boundaries, which exhibit concave surfaces. This process is thought to be driven by compressive stress caused by the grain boundaries. In addition to this stress, lattice mismatch between the two phases also results in structural defect formation.
authors.affiliation: Advanced Materials Laboratories, Sony Corporation, Okata, Atsugi, Kanagawa 243-0021, Japan.
authors.forename: Yosuke
authors.initials: Y
authors.lastname: Murakami
authors.forename: Shigetaka
authors.initials: S
authors.lastname: Tomiya
authors.forename: Naoki
authors.initials: N
authors.lastname: Koshitani
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Kudo
authors.forename: Kotaro
authors.initials: K
authors.lastname: Satori
authors.forename: Masao
authors.initials: M
authors.lastname: Itabashi
authors.forename: Norihito
authors.initials: N
authors.lastname: Kobayashi
authors.forename: Kazumasa
authors.initials: K
authors.lastname: Nomoto