title: Organic thin film transistors using a polyhedral oligomeric silsesquioxane-based photo-patternable insulating material.
abstract: We synthesized a new photo-patternable organic/inorganic hybrid material, polyhedral oligomeric silsesquioxane (POSS) derivative containing cyclohexene-1,2-epoxide functional groups (POSS-EPOXY), and fabricated an organic thin film transistor (OTFT) using pentacene as an active p-type organic semiconductor and POSS-EPOXY as a gate dielectric layer to demonstrate its applicability for organic electronics. The pentacene transistor with the POSS-EPOXY layer shows comparable transistor characteristics as that with the prototypical polymeric gate insulator of poly(vinylphenol) (PVP). They exhibit field-effect mobility of micro(FET) approximately 0.075 cm2/Vs, threshold voltage of V(T) = -22.2 V, the on/off current ratio of 7 x 10(5), and the subthreshold slope of 3.9 V/dec.
authors.affiliation: School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
authors.forename: Hyun-Duck
authors.initials: HD
authors.lastname: Cho
authors.forename: Chung-Hwa
authors.initials: CH
authors.lastname: Jung
authors.forename: Moo-Jin
authors.initials: MJ
authors.lastname: Park
authors.forename: Hong-Ku
authors.initials: HK
authors.lastname: Shim
authors.forename: Do-Hoon
authors.initials: DH
authors.lastname: Hwang
authors.forename: Changhee
authors.initials: C
authors.lastname: Lee