title: Solution assembly of organized carbon nanotube networks for thin-film transistors.
abstract: Ultrathin, transparent electronic materials consisting of solution-assembled nanomaterials that are directly integrated as thin-film transistors or conductive sheets may enable many new device structures. Applications ranging from disposable autonomous sensors to flexible, large-area displays and solar cells can dramatically expand the electronics market. With a practical, reliable method for controlling their electronic properties through solution assembly, submonolayer films of aligned single-walled carbon nanotubes (SWNTs) may provide a promising alternative for large-area, flexible electronics. Here, we report SWNT network TFTs (SWNTntTFTs) deposited from solution with controllable topology, on/off ratios averaging greater than 10(5), and an apparent mobility averaging 2 cm(2)/V.s, without any pre- or postprocessing steps. We employ a spin-assembly technique that results in chirality enrichment along with tunable alignment and density of the SWNTs by balancing the hydrodynamic force (spin rate) with the surface interaction force controlled by a chemically functionalized interface. This directed nanoscale assembly results in enriched semiconducting nanotubes yielding excellent TFT characteristics, which is corroborated with mu-Raman spectroscopy. Importantly, insight into the electronic properties of these SWNT networks as a function of topology is obtained.
authors.affiliation: Department of Chemical Engineering, Stanford University, Stauffer III, Stanford, CA 94305-5025, USA.
authors.forename: Melburne C
authors.initials: MC
authors.lastname: Lemieux
authors.forename: Seihout
authors.initials: S
authors.lastname: Sok
authors.forename: Mark E
authors.initials: ME
authors.lastname: Roberts
authors.forename: Justin P
authors.initials: JP
authors.lastname: Opatkiewicz
authors.forename: Derrick
authors.initials: D
authors.lastname: Liu
authors.forename: Soumendra N
authors.initials: SN
authors.lastname: Barman
authors.forename: Nishant
authors.initials: N
authors.lastname: Patil
authors.forename: Subhasish
authors.initials: S
authors.lastname: Mitra
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008839:Microelectrodes; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012996:Solutions; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D008567:Membranes, Artificial; D012996:Solutions