title: Ultra thin CVD diamond film deposition by electrostatic self-assembly seeding process with nano-diamond particles.
abstract: Ultra thin and smooth nano crystalline diamond films were fabricated with electrostatic self-assembly seeding of explosively synthesized nano-diamond particles. Hard aggregates of nano-diamond particles were crushed by high revolution attrition milling at 1000 RPM to regulate the particle size. Through this process, cationic nano-diamond particles were coated with anionic PSS (poly sodium 4-styrene sulfonate) electrolytes. Anionic Si(100) substrate was coated with cationic PDDA (poly diallyldimethyl ammonium chloride) solution. Si(100)/PDDA/PSS/ND (nano-diamond) layer-by-layer structure was formed as a seeding layer by the simple dipping and rinsing of positively charged substrate into anionic PSS/nano-diamond solution. Throughout the seeding process, neither mechanical damage nor chemical attack was observed on the substrate. Every stage of this preparation was carried out at room temperature and pressure. The effect of attrition milling was determined by changing the milling time from 1 hr to 5 hrs. Through the attritional milling and monolayer formation of the nano-diamond, nucleation density was increased up to 3 x 10(11)/cm2. Typical hot filament chemical vapor deposition system was used to coat the diamond film on the ESA (electrostatic self-assembly) seeded Si(100) substrate. Although typical diamond deposition conditions (90 torr/1% CH4 in H2/800 degrees C) were maintained, ultra thin (< 100 nm) and continuous nano crystalline diamond films were deposited. Regardless of metallic or ceramic substrate, ESND (ESA Seeding of nano-diamond) process is applicable if the substrate has any charge. This simple nano technology based process ensures high thickness uniformity of diamond coating without visible edge effect.
authors.affiliation: Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713, Korea.
authors.forename: J H
authors.initials: JH
authors.lastname: Kim
authors.forename: S K
authors.initials: SK
authors.lastname: Lee
authors.forename: O M
authors.initials: OM
authors.lastname: Kwon
authors.forename: D S
authors.initials: DS
authors.lastname: Lim