title: Implantation induced hardening of nanocrystalline titanium thin films.
abstract: Formation of nanocrystalline TiN at low temperatures was demonstrated by combining Pulsed Laser Deposition (PLD) and ion implantation techniques. The Ti films of nominal thickness approximatly 250 nm were deposited at a substrate temperature of 200 degrees C by ablating a high pure titanium target in UHV conditions using a nanosecond pulsed Nd:YAG laser operating at 1064 nm. These films were implanted with 100 keV N+ ions with fluence ranging from 1.0 x 10(16) ions/cm2 to 1.0 x 10(17) ions/cm2 The structural, compositional and morphological evolutions were tracked using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM), respectively. TEM analysis revealed that the as-deposited titanium film is an fcc phase. With increasing ion fluence, its structure becomes amorphous phase before precipitation of nanocrystalline fcc TIN phase. Compositional depth profiles obtained from SIMS have shown the extent of nitrogen concentration gradient in the implantation zone. Both as-deposited and ion implanted films showed much higher hardness as compared to the bulk titanium. AFM studies revealed a gradual increase in surface roughness leading to surface patterning with increase in ion fluence.
authors.affiliation: Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, TN, India.
authors.forename: R
authors.initials: R
authors.lastname: Krishnan
authors.forename: S
authors.initials: S
authors.lastname: Amirthapandian
authors.forename: G
authors.initials: G
authors.lastname: Mangamma
authors.forename: R
authors.initials: R
authors.lastname: Ramaseshan
authors.forename: S
authors.initials: S
authors.lastname: Dash
authors.forename: A K
authors.initials: AK
authors.lastname: Tyagi
authors.forename: V
authors.initials: V
authors.lastname: Jayaram
authors.forename: Baldev
authors.initials: B
authors.lastname: Raj