title: Two-terminal nonvolatile memories based on single-walled carbon nanotubes.
abstract: Reproducible current hysteresis is observed in semiconducting single-walled carbon nanotubes (SWCNTs) measured in a two-terminal configuration without a gate electrode. On the basis of this hysteresis, a two-terminal nonvolatile memory is realized by applying voltage pulses of opposite polarities across the SWCNT. Charge trapping at the SWCNT/SiO(2) interface is proposed to account for the observed phenomena; this explanation is supported by the direct correlation between the switching behaviors and SWCNT carrier types. In particular, a change in dominant carrier type induced by adsorbates in air leads to the direct transition of hysteresis evolution in the same device, providing further evidence for the proposed mechanism.
authors.affiliation: Department of Bioengineering, Rice Quantum Institute, Rice University, Houston, Texas, USA.
authors.forename: Jun
authors.initials: J
authors.lastname: Yao
authors.forename: Zhong
authors.initials: Z
authors.lastname: Jin
authors.forename: Lin
authors.initials: L
authors.lastname: Zhong
authors.forename: Douglas
authors.initials: D
authors.lastname: Natelson
authors.forename: James M
authors.initials: JM
authors.lastname: Tour
mesh_terms: D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008839:Microelectrodes; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
chemical_list: D037742:Nanotubes, Carbon