Modeling a-SiC:H tandem pinpin and pinip photodiodes for color sensor application.
The present paper reports the optical properties of multilayer structures composed by p-i-n cells based on a-SiC:H or a-Si:H material. Different structures are studied in order to obtain image sensors that accomplish color filtering in addition to image pattern recognition. A simple theoretical model is developed to explain sensors behavior and to derive the optical-readout experimental procedure. Electrical models for the sensors are established for simulation purposes and to compare photocurrent signals with experimental data. A numerical simulation of the JV characteristic and of the spectral response is also presented in order to show possible future optimization of the device. Two main structures are studied, namely p-i-n/p-i-n and p-i-n/n-i-p tandem cells.
Fantoni
A
A
Electronics, Telecommunications and Computer Engineering Department ISEL, Rua Conselheiro Emídio Navarro, 1959-007 Lisboa, Portugal.
Martins
J
J
Fernandes
M
M
Louro
P
P
Vygranenko
Y
Y
Vieira
M
M
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003116:Color; D003124:Colorimetry / Q000295:instrumentation* / Q000379:methods; D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006859:Hydrogen / Q000737:chemistry*; D008962:Models, Theoretical; D010777:Photochemistry / Q000295:instrumentation*; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry*; D014159:Transducers
D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; D006859:Hydrogen; C022088:silicon carbide