title: Fluoride-decorated oxides for large enhancement of conductivity in intrinsic silicon nanowires.
abstract: We demonstrate that by controlling surface state properties with a simple and rapid aqueous fluoride ion treatment, excellent electronic operation can be achieved on intrinsic Si nanowires without bulk doping, thereby taking advantage of the increase in surface-to-volume ratios in these diminutive structures. Forming the fluoride-decorated (F-decorated) oxide surface significantly increases the conductivity by more than one order of magnitude over the oxide surface and more than three orders of magnitude over the oxide-free H-terminated surface. This provides a methodology that might, in some instances, sidestep the difficult-to-control impurity doping of nanodevices.
authors.affiliation: Department of Chemistry, Department of Mechanical Engineering and Materials Science, Rice University, MS 222, 6100 Main St., Houston, Texas 77005, USA.
authors.forename: Yubao
authors.initials: Y
authors.lastname: Li
authors.forename: Miaoxiang
authors.initials: M
authors.lastname: Chen
authors.forename: Bo
authors.initials: B
authors.lastname: Chen
authors.forename: James M
authors.initials: JM
authors.lastname: Tour