title: Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam.
abstract: The electrical resistance of single VO(2) nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M(1) phase to a mixture of the Mott-insulating M(2) and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M(2) phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
authors.forename: Shixiong
authors.initials: S
authors.lastname: Zhang
authors.forename: Jung Yen
authors.initials: JY
authors.lastname: Chou
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon
mesh_terms: D004553:Electric Conductivity; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D044367:Phase Transition; D013059:Spectrum Analysis, Raman / Q000379:methods*; D013223:Statistics as Topic; D017968:Vanadium Compounds / Q000737:chemistry*
chemical_list: D017968:Vanadium Compounds; C066075:vanadium pentoxide