title: Single ZnO nanowire based high-performance field effect transistors (FETs).
abstract: The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e., back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were approximately 3.2 and approximately 7.4 nS, respectively. The field effect mobilities (micro(eff)) for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm2/V x s, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches.
authors.affiliation: School of Semiconductor and Chemical Engineering, BK21 Centre for Future Energy Materials and Devices, Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju 561756, South Korea.
authors.forename: Yong Kyu
authors.initials: YK
authors.lastname: Park
authors.forename: Ahmad
authors.initials: A
authors.lastname: Umar
authors.forename: Jin-Seok
authors.initials: JS
authors.lastname: Kim
authors.forename: H Y
authors.initials: HY
authors.lastname: Yang
authors.forename: Jeong Su
authors.initials: JS
authors.lastname: Lee
authors.forename: Yoon-Bong
authors.initials: YB
authors.lastname: Hahn