title: TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.
abstract: The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the 111 direction. NW with higher Mn concentrations grow along the 110 direction and reveal a branching structure. The main nanowire and branches grow along the 110 directions belonging to only one {111} plane.
authors.affiliation: Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46 02-668 Warsaw, Poland. dluzew@ifpan.edu.pl
authors.forename: P
authors.initials: P
authors.lastname: Dłuzewski
authors.forename: J
authors.initials: J
authors.lastname: Sadowski
authors.forename: S
authors.initials: S
authors.lastname: Kret
authors.forename: J
authors.initials: J
authors.lastname: Dabrowski
authors.forename: K
authors.initials: K
authors.lastname: Sobczak