title: Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.
abstract: An enhancement of the electroluminescence (EL) from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide (AAO) pattern was demonstrated. The nanoporous AAO pattern with a pore density of 1.4 x 10(10) cm(-2) and a pore diameter of 50 +/- 10 nm was fabricated by the two-step anodic oxidation method on a n-type silicon wafer. The nanoscale AAO patterned Si p(+)-n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Si p(+)-n junctions. The enhancement may originate from a reduction of nonradiative recombination due to partial passivation of the Si surface by the AAO pattern and improvement of the light extraction due to surface nanotextures.
authors: State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing, People's Republic of China.
authors: T
authors: T
authors: Hong
authors: T
authors: T
authors: Chen
authors: G Z
authors: GZ
authors: Ran
authors: J
authors: J
authors: Wen
authors: Y Z
authors: YZ
authors: Li
authors: T
authors: T
authors: Dai
authors: G G
authors: GG
authors: Qin
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004563:Electrochemistry / Q000295:instrumentation*; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D000537:Aluminum Oxide; D012825:Silicon