title: Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor.
abstract: We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.
authors: Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney NSW 2052, Australia. kuan-yen@student.unsw.edu.au
authors: Kuan Yen
authors: KY
authors: Tan
authors: Kok Wai
authors: KW
authors: Chan
authors: Mikko
authors: M
authors: Möttönen
authors: Andrea
authors: A
authors: Morello
authors: Changyi
authors: C
authors: Yang
authors: Jessica
authors: J
authors: van Donkelaar
authors: Andrew
authors: A
authors: Alves
authors: Juha-Matti
authors: JM
authors: Pirkkalainen
authors: David N
authors: DN
authors: Jamieson
authors: Robert G
authors: RG
authors: Clark
authors: Andrew S
authors: AS
authors: Dzurak