Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer.
The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.
Chakrabarti
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S
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India.
Halder
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N
Sengupta
S
S
Ghosh
Sandip
S
Mishima
T D
TD
Stanley
C R
CR