title: Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K.
abstract: We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.
authors: Institute of Solid State Physics, Semiconductor Optics, University of Bremen, PO Box 330 440, 28334 Bremen, Germany. jkalden@ifp.uni-bremen.de
authors: J
authors: J
authors: Kalden
authors: C
authors: C
authors: Tessarek
authors: K
authors: K
authors: Sebald
authors: S
authors: S
authors: Figge
authors: C
authors: C
authors: Kruse
authors: D
authors: D
authors: Hommel
authors: J
authors: J
authors: Gutowski