title: Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires.
abstract: We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.
authors: School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.
authors: C-Y
authors: CY
authors: Wen
authors: M C
authors: MC
authors: Reuter
authors: J
authors: J
authors: Bruley
authors: J
authors: J
authors: Tersoff
authors: S
authors: S
authors: Kodambaka
authors: E A
authors: EA
authors: Stach
authors: F M
authors: FM
authors: Ross