title: The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics.
abstract: Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100,000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.
authors: Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan. kaiju@es.hokudai.ac.jp
authors: Hideo
authors: H
authors: Kaiju
authors: Kenji
authors: K
authors: Kondo
authors: Akito
authors: A
authors: Ono
authors: Nobuyoshi
authors: N
authors: Kawaguchi
authors: Jonghan
authors: J
authors: Won
authors: Akihiko
authors: A
authors: Hirata
authors: Manabu
authors: M
authors: Ishimaru
authors: Yoshihiko
authors: Y
authors: Hirotsu
authors: Akira
authors: A
authors: Ishibashi