Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors.
The fact that single-layer graphene can be visualized on 300 nm SiO(2)/Si substrate using an optical microscope has enabled the facile fabrication of single-layer graphene devices for fundamental studies and potential applications. Here we report on an Al(2)O(3)/Si substrate for the fabrication of graphene devices with better contrast and higher performance. Our studies show that the contrast of single-layer graphene on 72 nm Al(2)O(3)/Si substrate is much better than that of single-layer graphene on 300 nm SiO(2)/Si substrate. Moreover, the transconductance of single-layer graphene transistors on Al(2)O(3)/Si substrate shows a more than sevenfold increase, due to the smaller dielectric thickness and higher dielectric constant in a 72 nm Al(2)O(3) film. These studies demonstrate a new and superior substrate for the fabrication of graphene transistors, and are of significance for both fundamental studies and technological applications.
Liao
Lei
L
Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA.
Bai
Jingwei
J
Qu
Yongquan
Y
Huang
Yu
Y
Duan
Xiangfeng
X
D000537:Aluminum Oxide / Q000737:chemistry*; D002244:Carbon / Q000737:chemistry*; D025802:Electric Capacitance; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
D002244:Carbon; D000537:Aluminum Oxide; D012825:Silicon