A novel route for the inclusion of metal dopants in silicon.
We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
Gardener
Jules A
JA
Department of Physics, University College London, London, UK.
Liaw
Irving
I
Aeppli
Gabriel
G
Boyd
Ian W
IW
Chater
Richard J
RJ
Jones
Tim S
TS
McPhail
David S
DS
Sankar
Gopinathan
G
Stoneham
A Marshall
AM
Sikora
Marcin
M
Thornton
Geoff
G
Heutz
Sandrine
S
D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008345:Manganese / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013499:Surface Properties / Q000528:radiation effects; D014466:Ultraviolet Rays
D046911:Macromolecular Substances; D008345:Manganese; D012825:Silicon