Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K.
We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.
Kalden
J
J
Institute of Solid State Physics, Semiconductor Optics, University of Bremen, PO Box 330 440, 28334 Bremen, Germany. jkalden@ifp.uni-bremen.de
Tessarek
C
C
Sebald
K
K
Figge
S
S
Kruse
C
C
Hommel
D
D
Gutowski
J
J