A multimodal sensing device for fluorescence imaging and electrical potential measurement of neural activities in a mouse deep brain.
We have developed a multimodal CMOS sensing device to detect fluorescence image and electrical potential for neural activities in a mouse deep brain. The device consists of CMOS image sensor with on-chip electrodes and excitation light sources, all of which are integrated on a polyimide substrate. The novel feature of this device is its embedded on-chip electrodes which are partially transmit incident light so that the whole image can be acquired by the sensor. We have demonstrated the CMOS sensor device successfully operates in hippocampus area of an anesthetized mouse.
Ohta
Jun
J
Graduate School of Materials Science, Nara Institute of Science and Technology, and JST, CREST, Ikoma, Nara 630-0101, Japan. ohta@ms.naist.jp
Tagawa
Ayato
A
Minami
Hiroki
H
Noda
Toshihiko
T
Sasagawa
Kiyotaka
K
Tokuda
Takashi
T
Hatanaka
Yumiko
Y
Ishikawa
Yasuyuki
Y
Tamura
Hideki
H
Shiosaka
Sadao
S
D000200:Action Potentials / Q000502:physiology; D000818:Animals; D001921:Brain / Q000502:physiology*; D004567:Electrodes, Implanted; D004569:Electroencephalography / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D051379:Mice; D008856:Microscopy, Fluorescence / Q000295:instrumentation*; D008904:Miniaturization; D009474:Neurons / Q000502:physiology*; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D018511:Systems Integration