title: Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory.
abstract: Ag and In co-doped SbTe phase change material (AgInSbTe) was used to fabricate nanopillar phase change memory. The AgInSbTe nanopillar type phase change device with 200 nm of diameter was fabricated by nanoimprint lithography and was reversibly changed between the resistances of 10(4) and 10(6) Omega by applying set/reset pulses using conducting atomic force microscopy. Due to the fast crystallization nature of AgInSbTe, the set operation of the device could be done with only 50 ns of set pulse. The fast crystallization nature of AgInSbTe is also responsible for the decrease in reset voltage of devices set with a short pulse.
authors: Department of Materials Science and Engineering, Korea University, Seoul, Republic of Korea.
authors: Sung-Hoon
authors: SH
authors: Hong
authors: Byeong-Ju
authors: BJ
authors: Bae
authors: Heon
authors: H
authors: Lee
mesh_terms: D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D044367:Phase Transition; D018030:Silver Compounds / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D018030:Silver Compounds