title: Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer.
abstract: The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.
authors: Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India.
authors: S
authors: S
authors: Chakrabarti
authors: N
authors: N
authors: Halder
authors: S
authors: S
authors: Sengupta
authors: Sandip
authors: S
authors: Ghosh
authors: T D
authors: TD
authors: Mishima
authors: C R
authors: CR
authors: Stanley