title: A novel route for the inclusion of metal dopants in silicon.
abstract: We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
authors: Department of Physics, University College London, London, UK.
authors: Jules A
authors: JA
authors: Gardener
authors: Irving
authors: I
authors: Liaw
authors: Gabriel
authors: G
authors: Aeppli
authors: Ian W
authors: IW
authors: Boyd
authors: Richard J
authors: RJ
authors: Chater
authors: Tim S
authors: TS
authors: Jones
authors: David S
authors: DS
authors: McPhail
authors: Gopinathan
authors: G
authors: Sankar
authors: A Marshall
authors: AM
authors: Stoneham
authors: Marcin
authors: M
authors: Sikora
authors: Geoff
authors: G
authors: Thornton
authors: Sandrine
authors: S
authors: Heutz
mesh_terms: D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008345:Manganese / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013499:Surface Properties / Q000528:radiation effects; D014466:Ultraviolet Rays
chemical_list: D046911:Macromolecular Substances; D008345:Manganese; D012825:Silicon