title: Phosphorus doping of ultra-small silicon nanocrystals.
abstract: P-doped Si nanocrystals (radius <or=2 nm) were synthesized by depositing an ultrathin (0.3 nm) P- SiO(2) film close to each SiO layer of SiO/SiO(2) multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO(2), P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P- SiO(2) layer.
authors: Laboratorio Nazionale MDM, Agrate Brianza (MI), Italy. michele.perego@mdm.infm.it
authors: Michele
authors: M
authors: Perego
authors: Caroline
authors: C
authors: Bonafos
authors: Marco
authors: M
authors: Fanciulli
mesh_terms: D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D010758:Phosphorus / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D010758:Phosphorus; D012822:Silicon Dioxide