The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics.
Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100,000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.
Kaiju
Hideo
H
Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020, Japan. kaiju@es.hokudai.ac.jp
Kondo
Kenji
K
Ono
Akito
A
Kawaguchi
Nobuyoshi
N
Won
Jonghan
J
Hirata
Akihiko
A
Ishimaru
Manabu
M
Hirotsu
Yoshihiko
Y
Ishibashi
Akira
A