title: Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid.
abstract: We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.
authors: Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.
authors: Oguz H
authors: OH
authors: Elibol
authors: Bobby
authors: B
authors: Reddy
authors: Pradeep R
authors: PR
authors: Nair
authors: Brian
authors: B
authors: Dorvel
authors: Felice
authors: F
authors: Butler
authors: Zahab S
authors: ZS
authors: Ahsan
authors: Donald E
authors: DE
authors: Bergstrom
authors: Muhammad A
authors: MA
authors: Alam
authors: Rashid
authors: R
authors: Bashir
mesh_terms: D005456:Fluorescent Dyes / Q000737:chemistry; D006358:Hot Temperature; D056656:Lab-On-A-Chip Devices; D008872:Microwaves; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D005456:Fluorescent Dyes; D012825:Silicon