Orientational ordering of solution derived epitaxial Gd-doped ceria nanowires induced by nanoscratching.
When one-dimensional nanostructures are epitaxially grown on a substrate a key goal is to control the nanowire's position and orientation. Nanoscratching of single crystalline (001)- LaAlO(3) substrates is demonstrated to be extraordinarily effective in directing the self-assembly of Ce(0.9)Gd(0.1)O(2-y) epitaxial nanowires grown by chemical solution deposition. The local anisotropic elastic strain field imposed by the indentation lines is responsible for the breaking of the pre-existing orientation energy degeneracy and selects the nanowires' orientation parallel to the lines to an extent that can reach 100%.
Zabaleta
Jone
J
Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Barcelona, Catalunya, Spain. jzabaleta@icmab.es
Mestres
Narcis
N
Abellán
Patricia
P
Gibert
Marta
M
Sandiumenge
Felip
F
Puig
Teresa
T
Obradors
Xavier
X
D016880:Anisotropy; D002563:Cerium / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D005682:Gadolinium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012996:Solutions; D013499:Surface Properties
D046911:Macromolecular Substances; D012996:Solutions; D002563:Cerium; D005682:Gadolinium