Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid.
We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.
Elibol
Oguz H
OH
Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.
Reddy
Bobby
B
Nair
Pradeep R
PR
Dorvel
Brian
B
Butler
Felice
F
Ahsan
Zahab S
ZS
Bergstrom
Donald E
DE
Alam
Muhammad A
MA
Bashir
Rashid
R
D005456:Fluorescent Dyes / Q000737:chemistry; D006358:Hot Temperature; D056656:Lab-On-A-Chip Devices; D008872:Microwaves; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D005456:Fluorescent Dyes; D012825:Silicon