Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor.
We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.
Tan
Kuan Yen
KY
Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney NSW 2052, Australia. kuan-yen@student.unsw.edu.au
Chan
Kok Wai
KW
Möttönen
Mikko
M
Morello
Andrea
A
Yang
Changyi
C
van Donkelaar
Jessica
J
Alves
Andrew
A
Pirkkalainen
Juha-Matti
JM
Jamieson
David N
DN
Clark
Robert G
RG
Dzurak
Andrew S
AS