title: The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
abstract: We report effective methods for improving light extraction efficiency for n-side-up vertical InGaN light-emitting diodes (LEDs). For the LEDs with high reflectance Ag-based p-contacts, nanotexturing of the n-GaN surface using a combination of photonic crystals and photochemical etching drastically enhances the efficiency of extraction from the top surface. In contrast, the LEDs with low reflectance Au-based p-contacts show significantly less improvement through the nanotexturing. These experimental results indicate the critical role of high reflectance p-contacts as well as surface texturing in improving the light extraction efficiency of the vertical LEDs for solid-state lighting.
authors: Division of Advanced Materials Science, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, Korea.
authors: Ho Won
authors: HW
authors: Jang
authors: Seong Wook
authors: SW
authors: Ryu
authors: Hak Ki
authors: HK
authors: Yu
authors: Sanghan
authors: S
authors: Lee
authors: Jong-Lam
authors: JL
authors: Lee
mesh_terms: D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008839:Microelectrodes; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride