title: Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers.
abstract: By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and experimentally verified for the cavity design of two-section passively mode-locked quantum dash (QDash) lasers. The new set of equations can be used to predict functional device layouts using the measured modal gain and loss characteristics as input. It is shown to be a valuable tool for realizing the cavity design of monolithic long-wavelength InAs/InP QDash passively mode-locked lasers.
authors.affiliation: University of New Mexico, Center for High Technology Materials, 1313 Goddard SE, Albuquerque, NM 87106, USA. cylin@unm.edu
authors.forename: C-Y
authors.initials: CY
authors.lastname: Lin
authors.forename: Y-C
authors.initials: YC
authors.lastname: Xin
authors.forename: Y
authors.initials: Y
authors.lastname: Li
authors.forename: F L
authors.initials: FL
authors.lastname: Chiragh
authors.forename: L F
authors.initials: LF
authors.lastname: Lester
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D010720:Phosphines / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity
chemical_list: D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C076773:indium arsenide; C090882:indium phosphide