InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.
Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.
Schlosser
Peter J
PJ
Institute of Photonics, University of Strathclyde, Glasgow, UK peter.schlosser@strath.ac.uk
Hastie
Jennifer E
JE
Calvez
Stephane
S
Krysa
Andrey B
AB
Dawson
Martin D
MD
D000535:Aluminum / Q000737:chemistry*; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D049449:Luminescence; D055095:Optics and Photonics; D010710:Phosphates / Q000737:chemistry*; D045663:Quantum Dots; D012031:Refractometry; D014466:Ultraviolet Rays
D010710:Phosphates; D007204:Indium; D005708:Gallium; D000535:Aluminum