Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
The authors report on the achievement of lasing in rolled-up semiconductor microtubes at room temperature, wherein self-organized InGaAs/GaAs quantum dots are incorporated as the gain medium. The free-standing quantum dot microtubes, with a diameter of approximately 5-6 microm and wall thickness of approximately 100 nm, are formed when the coherently strained InGaAs/GaAs quantum dot heterostructure is selectively released from the GaAs substrate. The devices are characterized by an ultralow threshold (approximately 4 microW) and a minimum intrinsic linewidth of approximately 0.2 - 0.3 nm at room temperature. The multiple lasing modes are analyzed using both the finite-difference time domain method and also a planar dielectric waveguide model.
Li
Feng
F
Department of Electrical and Computer Engineering, McGill University 3480 University Street, Montreal, Quebec H3A 2A7, Canada.
Mi
Zetian
Z
D001152:Arsenicals / Q000737:chemistry*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D008904:Miniaturization; D045663:Quantum Dots; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide