Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers.
Temperature dependent gain characteristics and linewidth enhancement factor (alpha-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and analyzed by using the Hakki-Paoli method. The optical gain and differential gain showed a more rapid increase as a function of the injected carriers as temperature decreased. The alpha-factor for the lasing mode was estimated as 2.8 at room temperature and decreased to a value as low as 0.6 at 80 K.
Lu
Tien-Chang
TC
Department of Photonics, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan. timtclu@mail.nctu.edu.tw
Cheng
Bo-Siao
BS
Liu
Mei-Chung
MC
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D054023:Lasers, Semiconductor; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D013696:Temperature
C473348:gallium nitride; D005708:Gallium