title: Depth-of-focus (DoF) analysis of a 193nm superlens imaging structure.
abstract: We present a design of a 193 nm superlens imaging structure to enable the printing of 20 nm features. Optical image simulations indicate that the 20 nm resolution is feasible for both the periodic grating feature and the two-slit feature. Nominal depth-of-focus (DoF) position for both features is identified through the image contrast calculations. Simulations show that the two features have a common nominal dose at the nominal DoF to resolve 20 nm critical dimension when a suitable dielectric material is placed between mask and superlens layer. A DoF of micro8 nm is shown to be obtainable for the 20 nm half-pitch grating feature while the respective DoF for the two-slit feature is less than 8 nm which potentially can be enhanced by employing existing lithographic resolution enhancement techniques.
authors.affiliation: Luna Innovations, Inc, 3157 State Street, Blacksburg, VA 24060, USA. shiz@lunainnovations.com
authors.forename: Zhong
authors.initials: Z
authors.lastname: Shi
authors.forename: Vladimir
authors.initials: V
authors.lastname: Kochergin
authors.forename: Fei
authors.initials: F
authors.lastname: Wang
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007909:Lenses; D036103:Nanotechnology / Q000295:instrumentation*; D010781:Photography / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity