High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
Gardes
F Y
FY
Advanced Technology Institute, University of Surrey Guildford, Surrey, UK. F.gardes@surrey.ac.uk
Brimont
A
A
Sanchis
P
P
Rasigade
G
G
Marris-Morini
D
D
O'Faolain
L
L
Dong
F
F
Fedeli
J M
JM
Dumon
P
P
Vivien
L
L
Krauss
T F
TF
Reed
G T
GT
Martí
J
J
D004581:Electronics / Q000295:instrumentation; D008855:Microscopy, Electron, Scanning / Q000379:methods; D055096:Optical Devices; D055095:Optics and Photonics; D017785:Photons; D012031:Refractometry; D012825:Silicon / Q000737:chemistry*
D012825:Silicon