title: High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.
abstract: High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
authors.affiliation: Advanced Technology Institute, University of Surrey Guildford, Surrey, UK. F.gardes@surrey.ac.uk
authors.forename: F Y
authors.initials: FY
authors.lastname: Gardes
authors.forename: A
authors.initials: A
authors.lastname: Brimont
authors.forename: P
authors.initials: P
authors.lastname: Sanchis
authors.forename: G
authors.initials: G
authors.lastname: Rasigade
authors.forename: D
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: L
authors.initials: L
authors.lastname: O'Faolain
authors.forename: F
authors.initials: F
authors.lastname: Dong
authors.forename: J M
authors.initials: JM
authors.lastname: Fedeli
authors.forename: P
authors.initials: P
authors.lastname: Dumon
authors.forename: L
authors.initials: L
authors.lastname: Vivien
authors.forename: T F
authors.initials: TF
authors.lastname: Krauss
authors.forename: G T
authors.initials: GT
authors.lastname: Reed
authors.forename: J
authors.initials: J
authors.lastname: Martí
mesh_terms: D004581:Electronics / Q000295:instrumentation; D008855:Microscopy, Electron, Scanning / Q000379:methods; D055096:Optical Devices; D055095:Optics and Photonics; D017785:Photons; D012031:Refractometry; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon