Iterative bandgap engineering at selected areas of quantum semiconductor wafers.
We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 mum in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.
Stanowski
Radoslaw
R
Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada.
Martin
Matthieu
M
Ares
Richard
R
Dubowski
Jan J
JJ
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D011789:Quantum Theory; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity