Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.
The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.
Pan
Huapu
H
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. hp5n@virginia.edu
Li
Zhi
Z
Beling
Andreas
A
Campbell
Joe C
JC
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation*; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity