title: Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission.
abstract: Two-dimensional (2D) light diffraction in a uniform array of GaN nanocolumns arranged in a rectangular lattice dramatically enhanced the light intensity at a specific wavelength, indicating the function of 2D distributed feedback (DFB). Here a GaN rectangular-lattice nanocolumn array, which integrated InGaN/GaN multiple quantum wells (MQWs) in the top region of the nanocolumns, was grown by rf-plasma-assisted molecular beam epitaxy (rf-MBE). At a specific wavelength of 471.1 nm, the first observation of stimulated emission from 2D-DFB in an InGaN-based nanocolumn array was obtained. The specific wavelength is calculated by the 2D finite-difference time domain (2D-FDTD) method on the assumption of a refractive index dispersion of GaN; a simple expression for specific wavelength, which is a function of the array period L and the hexagon side length S of each nanocolumn, is proposed, which is convenient for producing a simple design of a GaN nanocolumn array structure in a square lattice.
authors.affiliation: Department of Engineering and Applied Sciences, Sophia University, Tokyo 102-8554, Japan.
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Kouno
authors.forename: Katsumi
authors.initials: K
authors.lastname: Kishino
authors.forename: Kouji
authors.initials: K
authors.lastname: Yamano
authors.forename: Akihiko
authors.initials: A
authors.lastname: Kikuchi
mesh_terms: D003116:Color; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride