title: 170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon.
abstract: Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence.
authors.affiliation: MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. j.d.b.bradley@ewi.utwente.nl
authors.forename: Jonathan D B
authors.initials: JD
authors.lastname: Bradley
authors.forename: Marcia
authors.initials: M
authors.lastname: Costa e Silva
authors.forename: Mathilde
authors.initials: M
authors.lastname: Gay
authors.forename: Laurent
authors.initials: L
authors.lastname: Bramerie
authors.forename: Alfred
authors.initials: A
authors.lastname: Driessen
authors.forename: Kerstin
authors.initials: K
authors.lastname: Wörhoff
authors.forename: Jean-Claude
authors.initials: JC
authors.lastname: Simon
authors.forename: Markus
authors.initials: M
authors.lastname: Pollnau