170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon.
Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence.
Bradley
Jonathan D B
JD
MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. j.d.b.bradley@ewi.utwente.nl
Costa e Silva
Marcia
M
Gay
Mathilde
M
Bramerie
Laurent
L
Driessen
Alfred
A
Wörhoff
Kerstin
K
Simon
Jean-Claude
JC
Pollnau
Markus
M