Carbon nanotube Schottky diode via selective electrochemical metal deposition.
A single walled carbon nanotube (SWNT) Schottky diode was fabricated via selective electrochemical metal deposition on a prefabricated SWNT field effect transistor device. By electrochemically depositing Pd on only one of the prepatterned Ti electrodes, asymmetric Ohmic (at Pd-SWNT) and Schottky (at SWNT-Ti) contacts were resolved, resulting in efficient current rectification. The selective electrochemical deposition was performed by electrically isolating two Ti electrodes connected through a SWNT by depleting hole carriers in the SWNT upon the simultaneous application of high positive gate voltage during the deposition process. The successful selective deposition of Pd metals was confirmed by X-ray photoelectron spectroscopy.
Lim
Hyunseob
H
Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang 790-786, Korea.
Song
Hyun Jae
HJ
Lee
Yoonmi
Y
Shin
Hyun-Joon
HJ
Choi
Hee Cheul
HC