Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier.
By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of approximately 40 micros were successively generated at a repetition rate of 1 kHz.
Lee
Yong Wook
YW
Metal-Insulator Transition Project, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea. yongwook@pknu.ac.kr
Kim
Bong-Jun
BJ
Choi
Sungyoul
S
Lee
Yong Wan
YW
Kim
Hyun-Tak
HT
D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005336:Fiber Optic Technology / Q000295:instrumentation*; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D017968:Vanadium Compounds / Q000737:chemistry*
D017968:Vanadium Compounds; C066075:vanadium pentoxide