title: Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide.
abstract: Ni-coated Si-rich oxide (SRO, SiO(x)) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO(2), irrespective of x. The diameters of the NWs are well controlled from 82 to 23 nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.
authors.affiliation: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, Korea.
authors.forename: Dong Hee
authors.initials: DH
authors.lastname: Shin
authors.forename: Sung
authors.initials: S
authors.lastname: Kim
authors.forename: Seung Hui
authors.initials: SH
authors.lastname: Hong
authors.forename: Suk-Ho
authors.initials: SH
authors.lastname: Choi
authors.forename: Kyung Joong
authors.initials: KJ
authors.lastname: Kim