title: Organic nonvolatile memory transistors for flexible sensor arrays.
abstract: Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages (< or = 6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.
authors.affiliation: Department of Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Sekitani
authors.forename: Tomoyuki
authors.initials: T
authors.lastname: Yokota
authors.forename: Ute
authors.initials: U
authors.lastname: Zschieschang
authors.forename: Hagen
authors.initials: H
authors.lastname: Klauk
authors.forename: Siegfried
authors.initials: S
authors.lastname: Bauer
authors.forename: Ken
authors.initials: K
authors.lastname: Takeuchi
authors.forename: Makoto
authors.initials: M
authors.lastname: Takamiya
authors.forename: Takayasu
authors.initials: T
authors.lastname: Sakurai
authors.forename: Takao
authors.initials: T
authors.lastname: Someya