Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide.
Ni-coated Si-rich oxide (SRO, SiO(x)) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO(2), irrespective of x. The diameters of the NWs are well controlled from 82 to 23 nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.
Shin
Dong Hee
DH
Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, Korea.
Kim
Sung
S
Hong
Seung Hui
SH
Choi
Suk-Ho
SH
Kim
Kyung Joong
KJ