title: Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.
abstract: This work documents the first example of deposition of high-quality Gd(2)O(3) thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG)(3)]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.
authors.affiliation: Inorganic Chemistry II, Ruhr-University Bochum, 44801 Bochum, Germany.
authors.forename: Andrian P
authors.initials: AP
authors.lastname: Milanov
authors.forename: Ke
authors.initials: K
authors.lastname: Xu
authors.forename: Apurba
authors.initials: A
authors.lastname: Laha
authors.forename: Eberhard
authors.initials: E
authors.lastname: Bugiel
authors.forename: Ramadurai
authors.initials: R
authors.lastname: Ranjith
authors.forename: Dominik
authors.initials: D
authors.lastname: Schwendt
authors.forename: H Jörg
authors.initials: HJ
authors.lastname: Osten
authors.forename: Harish
authors.initials: H
authors.lastname: Parala
authors.forename: Roland A
authors.initials: RA
authors.lastname: Fischer
authors.forename: Anjana
authors.initials: A
authors.lastname: Devi