Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.
This work documents the first example of deposition of high-quality Gd(2)O(3) thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG)(3)]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.
Milanov
Andrian P
AP
Inorganic Chemistry II, Ruhr-University Bochum, 44801 Bochum, Germany.
Xu
Ke
K
Laha
Apurba
A
Bugiel
Eberhard
E
Ranjith
Ramadurai
R
Schwendt
Dominik
D
Osten
H Jörg
HJ
Parala
Harish
H
Fischer
Roland A
RA
Devi
Anjana
A