Photoluminescence of self-assembled InAs quantum dots embedded in photonic crystal nanocavities with shifted air holes.
This study investigates the photoluminescence for self-assembled InAs quantum dots embedded in photonic crystal nanocavities as two of the air holes nearest the H1 cavity were shifted. A rapid decrease of resonant wavelength and quality factor for the cavity modes, in which the electric field patterns extended in the shifting direction, were found as the shift increased from 0.2 to 0.4 lattice constants. This phenomenon is interpreted as being caused by the formation of two point defects between the nearest and second nearest air holes.
Chen
Wen-Yen
WY
Department of Physics and Center for Nano Science and Technology, National Central University, Jhong-li, 32001, Taiwan, Republic of China.
Chang
Hsiang-Szu
HS
Lin
Chia-Han
CH
Chiu
Pei-Chin
PC
Wang
Chun-Jung
CJ
Tseng
Yen-Chun
YC
Chyi
Jen-Inn
JI
Hsu
Tzu Min
TM