title: Growth of stacking-faults-free zinc blende GaAs nanowires on Si substrate by using AlGaAs/GaAs buffer layers.
abstract: Vertical GaAs nanowires on Si (111) substrate were grown by metal organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. Stacking-faults-free zinc blende nanowires were realized by using AlGaAs/GaAs buffer layers and growing under the optimized conditions, that the alloy droplet act as a catalyst rather than an adatom collector and its size and composition would keep stable during growth. The stable droplet contributes to the growth of stacking-faults-free nanowires. Moreover, by using the buffer layers, epitaxial growth of well-aligned NWs was not limited by the misfit strain induced critical diameter, and the unintentional doping of the GaAs nanowires with Si was reduced.
authors.affiliation: Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing, China. huihuang@bupt.edu.cn
authors.forename: Hui
authors.initials: H
authors.lastname: Huang
authors.forename: Xiaomin
authors.initials: X
authors.lastname: Ren
authors.forename: Xian
authors.initials: X
authors.lastname: Ye
authors.forename: Jingwei
authors.initials: J
authors.lastname: Guo
authors.forename: Qi
authors.initials: Q
authors.lastname: Wang
authors.forename: Yisu
authors.initials: Y
authors.lastname: Yang
authors.forename: Shiwei
authors.initials: S
authors.lastname: Cai
authors.forename: Yongqing
authors.initials: Y
authors.lastname: Huang