Super-high-frequency two-port AlN contour-mode resonators for RF applications.
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.
Rinaldi
Matteo
M
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA. rinaldim@seas.upenn.edu
Zuniga
Chiara
C
Zuo
Chengjie
C
Piazza
Gianluca
G
D000162:Acoustics / Q000295:instrumentation*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D011846:Radio Waves; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers; D014732:Vibration
D008567:Membranes, Artificial