title: UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.
abstract: In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4,Taipei,106 Taiwan.
authors.forename: Min-Yung
authors.initials: MY
authors.lastname: Ke
authors.forename: Tzu-Chun
authors.initials: TC
authors.lastname: Lu
authors.forename: Sheng-Chieh
authors.initials: SC
authors.lastname: Yang
authors.forename: Cheng-Pin
authors.initials: CP
authors.lastname: Chen
authors.forename: Yun-Wei
authors.initials: YW
authors.lastname: Cheng
authors.forename: Liang-Yi
authors.initials: LY
authors.lastname: Chen
authors.forename: Cheng-Ying
authors.initials: CY
authors.lastname: Chen
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: JianJang
authors.initials: J
authors.lastname: Huang
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors; D014466:Ultraviolet Rays