title: Zinc sulfide nanowire arrays on silicon wafers for field emitters.
abstract: Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V microm(-1), a low threshold field of 4.25 V microm(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (approximately 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.
authors.affiliation: Materials Engineering, The University of Queensland, St Lucia, QLD, Australia.
authors.forename: Zhi-Gang
authors.initials: ZG
authors.lastname: Chen
authors.forename: Lina
authors.initials: L
authors.lastname: Cheng
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Xiangdong
authors.initials: X
authors.lastname: Yao
authors.forename: Gao Qing Max
authors.initials: GQ
authors.lastname: Lu
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng