Generic nano-imprint process for fabrication of nanowire arrays.
A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
Pierret
Aurélie
A
Philips Research Laboratories Eindhoven, High Tech Campus 11, AE Eindhoven, The Netherlands.
Hocevar
Moïra
M
Diedenhofen
Silke L
SL
Algra
Rienk E
RE
Vlieg
E
E
Timmering
Eugene C
EC
Verschuuren
Marc A
MA
Immink
George W G
GW
Verheijen
Marcel A
MA
Bakkers
Erik P A M
EP