Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator.
We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).
Dong
Po
P
Kotura Inc., 2630 Corporate Place, Monterey Park, CA, 91754, USA. pdong@kotura.com
Liao
Shirong
S
Feng
Dazeng
D
Liang
Hong
H
Zheng
Dawei
D
Shafiiha
Roshanak
R
Kung
Cheng-Chih
CC
Qian
Wei
W
Li
Guoliang
G
Zheng
Xuezhe
X
Krishnamoorthy
Ashok V
AV
Asghari
Mehdi
M
D017076:Computer-Aided Design; D004581:Electronics; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007909:Lenses; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
D012825:Silicon