title: Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal.
abstract: Three dimensional (3-D) auto-cloned photonics crystal (APhC) of Ta2O5/SiO2 multi-layers was fabricated on the backside of the sapphire wafer that had InGaN/GaN multi-quantum well LED on the front side. 94% light extraction enhancement in comparison to the LED without APhC was obtained. Electrical properties of the LED did not altered by the APhC and its fabrication process. Experimental evidences showed that light extraction enhancement mechanism is two-folded: for rays that are emitted from the source and incident at lower angle of incidence to the APhC, the APhC acts as a high reflector; for rays incident at higher angle of incidence to the APhC, first order diffracted light from the APhC appears, the diffracted light is concentrated around the surface normal and is therefore capable of escaping.
authors.affiliation: Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan, 30013, R.O.C.
authors.forename: Chen-Yang
authors.initials: CY
authors.lastname: Huang
authors.forename: Hao-Min
authors.initials: HM
authors.lastname: Ku
authors.forename: Shiuh
authors.initials: S
authors.lastname: Chao
mesh_terms: D017076:Computer-Aided Design; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D017785:Photons; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride