title: Super-high-frequency two-port AlN contour-mode resonators for RF applications.
abstract: This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.
authors.affiliation: Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA. rinaldim@seas.upenn.edu
authors.forename: Matteo
authors.initials: M
authors.lastname: Rinaldi
authors.forename: Chiara
authors.initials: C
authors.lastname: Zuniga
authors.forename: Chengjie
authors.initials: C
authors.lastname: Zuo
authors.forename: Gianluca
authors.initials: G
authors.lastname: Piazza
mesh_terms: D000162:Acoustics / Q000295:instrumentation*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D011846:Radio Waves; D015203:Reproducibility of Results; D012680:Sensitivity and Specificity; D014159:Transducers; D014732:Vibration
chemical_list: D008567:Membranes, Artificial