title: Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator.
abstract: We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).
authors.affiliation: Kotura Inc., 2630 Corporate Place, Monterey Park, CA, 91754, USA. pdong@kotura.com
authors.forename: Po
authors.initials: P
authors.lastname: Dong
authors.forename: Shirong
authors.initials: S
authors.lastname: Liao
authors.forename: Dazeng
authors.initials: D
authors.lastname: Feng
authors.forename: Hong
authors.initials: H
authors.lastname: Liang
authors.forename: Dawei
authors.initials: D
authors.lastname: Zheng
authors.forename: Roshanak
authors.initials: R
authors.lastname: Shafiiha
authors.forename: Cheng-Chih
authors.initials: CC
authors.lastname: Kung
authors.forename: Wei
authors.initials: W
authors.lastname: Qian
authors.forename: Guoliang
authors.initials: G
authors.lastname: Li
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Zheng
authors.forename: Ashok V
authors.initials: AV
authors.lastname: Krishnamoorthy
authors.forename: Mehdi
authors.initials: M
authors.lastname: Asghari
mesh_terms: D017076:Computer-Aided Design; D004581:Electronics; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007909:Lenses; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon