title: Precise Ge quantum dot placement for quantum tunneling devices.
abstract: This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO2 or Si3N4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.
authors.affiliation: Department of Electrical Engineering, National Central University, ChungLi, Taiwan 320, Republic of China.
authors.forename: Kuan-Hung
authors.initials: KH
authors.lastname: Chen
authors.forename: Chung-Yen
authors.initials: CY
authors.lastname: Chien
authors.forename: Pei-Wen
authors.initials: PW
authors.lastname: Li