Wafer-scale synthesis and transfer of graphene films.
We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
Lee
Youngbin
Y
SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University,Suwon 440-746, Korea.
Bae
Sukang
S
Jang
Houk
H
Jang
Sukjae
S
Zhu
Shou-En
SE
Sim
Sung Hyun
SH
Song
Young Il
YI
Hong
Byung Hee
BH
Ahn
Jong-Hyun
JH
D002384:Catalysis; D003300:Copper / Q000737:chemistry*; D004129:Dimethylpolysiloxanes / Q000737:chemistry; D004581:Electronics; D004867:Equipment Design; D006108:Graphite / Q000737:chemistry; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology / Q000379:methods*; D009532:Nickel / Q000737:chemistry*; D055095:Optics and Photonics; D011108:Polymers / Q000737:chemistry; D011312:Pressure
D004129:Dimethylpolysiloxanes; D011108:Polymers; C013830:baysilon; D006108:Graphite; D003300:Copper; D009532:Nickel