title: Generic nano-imprint process for fabrication of nanowire arrays.
abstract: A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
authors.affiliation: Philips Research Laboratories Eindhoven, High Tech Campus 11, AE Eindhoven, The Netherlands.
authors.forename: Aurélie
authors.initials: A
authors.lastname: Pierret
authors.forename: Moïra
authors.initials: M
authors.lastname: Hocevar
authors.forename: Silke L
authors.initials: SL
authors.lastname: Diedenhofen
authors.forename: Rienk E
authors.initials: RE
authors.lastname: Algra
authors.forename: E
authors.initials: E
authors.lastname: Vlieg
authors.forename: Eugene C
authors.initials: EC
authors.lastname: Timmering
authors.forename: Marc A
authors.initials: MA
authors.lastname: Verschuuren
authors.forename: George W G
authors.initials: GW
authors.lastname: Immink
authors.forename: Marcel A
authors.initials: MA
authors.lastname: Verheijen
authors.forename: Erik P A M
authors.initials: EP
authors.lastname: Bakkers