title: Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity.
abstract: We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan. takasumi@nttbrl.jp
authors.forename: Takasumi
authors.initials: T
authors.lastname: Tanabe
authors.forename: Katsuhiko
authors.initials: K
authors.lastname: Nishiguchi
authors.forename: Eiichi
authors.initials: E
authors.lastname: Kuramochi
authors.forename: Masaya
authors.initials: M
authors.lastname: Notomi
mesh_terms: D017076:Computer-Aided Design; D003460:Crystallization; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007909:Lenses; D008027:Light; D008872:Microwaves; D017785:Photons; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013685:Telecommunications / Q000295:instrumentation*
chemical_list: D012825:Silicon