Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics.
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
Khankhoje
U K
UK
Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA. uday@caltech.edu
Kim
S-H
SH
Richards
B C
BC
Hendrickson
J
J
Sweet
J
J
Olitzky
J D
JD
Khitrova
G
G
Gibbs
H M
HM
Scherer
A
A