title: Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics.
abstract: In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
authors.affiliation: Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA. uday@caltech.edu
authors.forename: U K
authors.initials: UK
authors.lastname: Khankhoje
authors.forename: S-H
authors.initials: SH
authors.lastname: Kim
authors.forename: B C
authors.initials: BC
authors.lastname: Richards
authors.forename: J
authors.initials: J
authors.lastname: Hendrickson
authors.forename: J
authors.initials: J
authors.lastname: Sweet
authors.forename: J D
authors.initials: JD
authors.lastname: Olitzky
authors.forename: G
authors.initials: G
authors.lastname: Khitrova
authors.forename: H M
authors.initials: HM
authors.lastname: Gibbs
authors.forename: A
authors.initials: A
authors.lastname: Scherer