On-chip, planar integration of Er doped silicon-rich silicon nitride microdisk with SU-8 waveguide with sub-micron gap control.
On-chip, planar integration of Er-doped Silicon-rich silicon nitride microdisks with SU-8 waveguide and polymer cladding is achieved. The lack of high temperature or etching processes allows back-end integration without any optical damage to the microcavity resonator. The maximum measured Q-factor at 1475.5 nm was 13,000, corresponding to calculated intrinsic resonator Q-factor of 25,000 that is limited by process-related roughness.
Chang
Jee Soo
JS
Department of Physics, KAIST 373-1 Guseong-dong, Yuseong-Gu, Daejeon, Rep. of Korea.
Eom
Seok Chan
SC
Sung
Gun Yong
GY
Shin
Jung H
JH
D017076:Computer-Aided Design; D004852:Epoxy Compounds / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D004871:Erbium / Q000737:chemistry*; D008904:Miniaturization; D011108:Polymers / Q000737:chemistry*; D012031:Refractometry / Q000295:instrumentation*; D017655:Silicon Compounds / Q000737:chemistry*; D018511:Systems Integration; D014159:Transducers
D004852:Epoxy Compounds; D011108:Polymers; C520895:SU-8 compound; D017655:Silicon Compounds; D004871:Erbium; C032734:silicon nitride