Black Ge based on crystalline/amorphous core/shell nanoneedle arrays.
Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips ( approximately 4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence ( approximately 75 degrees ) and for relatively short nanoneedle lengths ( approximately 1 mum). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of approximately 1 eV. The reported black Ge could potentially have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.
Chueh
Yu-Lun
YL
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Fan
Zhiyong
Z
Takei
Kuniharu
K
Ko
Hyunhyub
H
Kapadia
Rehan
R
Rathore
Asghar A
AA
Miller
Nate
N
Yu
Kyoungsik
K
Wu
Ming
M
Haller
E E
EE
Javey
Ali
A