title: Transient memory effect in the photoluminescence of InGaN single quantum wells.
abstract: The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.
authors.affiliation: Yokohama City University, Graduate School of Nanobioscience, Department of Nanosystem Science, 22-2 Seto Kanazawa-ku, 236-0027 Yokohama, Japan.
authors.forename: Christian
authors.initials: C
authors.lastname: Feldmeier
authors.forename: Masayoshi
authors.initials: M
authors.lastname: Abiko
authors.forename: Ulrich T
authors.initials: UT
authors.lastname: Schwarz
authors.forename: Yoichi
authors.initials: Y
authors.lastname: Kawakami
authors.forename: Ruggero
authors.initials: R
authors.lastname: Micheletto
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D008163:Luminescent Measurements / Q000295:instrumentation*; D045663:Quantum Dots; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride