UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.
In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.
Ke
Min-Yung
MY
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4,Taipei,106 Taiwan.
Lu
Tzu-Chun
TC
Yang
Sheng-Chieh
SC
Chen
Cheng-Pin
CP
Cheng
Yun-Wei
YW
Chen
Liang-Yi
LY
Chen
Cheng-Ying
CY
He
Jr-Hau
JH
Huang
JianJang
J
D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors; D014466:Ultraviolet Rays