title: Effect of Si doping on photoelectrocatalytic decomposition of phenol of BiVO4 film under visible light.
abstract: The silicon-doped BiVO(4) film was fabricated by modified metalorganic decomposition (MOD) method. XRD analysis indicated that the crystal size of the BiVO(4) film was decreased from 32.4nm to 23.9nm by doping Si. The measurements of FT-IR spectra and the water contact angle showed that doping Si could elevate the surface hydrophilicity of the BiVO(4) film. The phenol elimination rate on the Si-doped BiVO(4) film electrode in the photoelectrocatalytic process was 1.84 times as great as that on the BiVO(4) film electrode. The enhanced photoelectrocatalytic performance was attributed to the decrease of the crystalline size and the enhancement of the hydrophilic performance.
authors.affiliation: Key Laboratory of Industrial Ecology and Environmental Engineering, Ministry of Education, China, School of Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024, China.
authors.forename: Xiufang
authors.initials: X
authors.lastname: Zhang
authors.forename: Xie
authors.initials: X
authors.lastname: Quan
authors.forename: Shuo
authors.initials: S
authors.lastname: Chen
authors.forename: Yaobin
authors.initials: Y
authors.lastname: Zhang
mesh_terms: D001729:Bismuth; D002384:Catalysis; D004566:Electrodes; D004572:Electrolysis; D015386:Hazardous Substances; D007700:Kinetics; D008027:Light; D053758:Nanoparticles; D019800:Phenol / Q000737:chemistry* / Q000528:radiation effects; D055668:Photochemical Processes; D012825:Silicon; D014638:Vanadates
chemical_list: D015386:Hazardous Substances; C091754:bismuth vanadium tetraoxide; D019800:Phenol; D014638:Vanadates; D001729:Bismuth; D012825:Silicon