Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.
Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.
Takulapalli
Bharath R
BR
Center for Solid State Electronics Research, Science and Engineering of Materials, Arizona State University, Tempe, AZ 85287, USA. bharath.takulapalli@asu.edu
D000588:Amines / Q000032:analysis; D002623:Chemistry Techniques, Analytical / Q000295:instrumentation*; D004583:Electrons; D006863:Hydrogen-Ion Concentration; D008956:Models, Chemical; D010087:Oxides / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D012984:Software; D014159:Transducers; D014173:Transistors, Electronic
D000588:Amines; D010087:Oxides; D012825:Silicon