Subsurface microscopy of interconnect layers of an integrated circuit.
We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.
Köklü
F Hakan
FH
Department of Electrical and Computer Engineering and the Photonics Center, Boston University, Boston, Massachusetts 02215, USA.
Unlü
M Selim
MS