title: Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications.
abstract: A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.
authors.affiliation: Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. jyzhang08@semi.ac.cn,
authors.forename: J Y
authors.initials: JY
authors.lastname: Zhang
authors.forename: X F
authors.initials: XF
authors.lastname: Wang
authors.forename: X D
authors.initials: XD
authors.lastname: Wang
authors.forename: Z C
authors.initials: ZC
authors.lastname: Fan
authors.forename: Y
authors.initials: Y
authors.lastname: Li
authors.forename: An
authors.initials: A
authors.lastname: Ji
authors.forename: F H
authors.initials: FH
authors.lastname: Yang