title: 352 nm ultraviolet emission from high-quality crystalline AlN whiskers.
abstract: High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at approximately 352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.
authors.affiliation: WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. bdliu@dlut.edu.cn
authors.forename: Baodan
authors.initials: B
authors.lastname: Liu
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
authors.forename: Aimin
authors.initials: A
authors.lastname: Wu
authors.forename: Xin
authors.initials: X
authors.lastname: Jiang
authors.forename: Benjamin
authors.initials: B
authors.lastname: Dierre
authors.forename: Takashi
authors.initials: T
authors.lastname: Sekiguchi
authors.forename: Chengchun
authors.initials: C
authors.lastname: Tang
authors.forename: Masanori
authors.initials: M
authors.lastname: Mitome
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg