title: Subsurface microscopy of interconnect layers of an integrated circuit.
abstract: We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.
authors.affiliation: Department of Electrical and Computer Engineering and the Photonics Center, Boston University, Boston, Massachusetts 02215, USA.
authors.forename: F Hakan
authors.initials: FH
authors.lastname: Köklü
authors.forename: M Selim
authors.initials: MS
authors.lastname: Unlü