title: Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
abstract: Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
authors.forename: Deok-Hwang
authors.initials: DH
authors.lastname: Kwon
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.forename: Jae Hyuck
authors.initials: JH
authors.lastname: Jang
authors.forename: Jong Myeong
authors.initials: JM
authors.lastname: Jeon
authors.forename: Min Hwan
authors.initials: MH
authors.lastname: Lee
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Xiang-Shu
authors.initials: XS
authors.lastname: Li
authors.forename: Gyeong-Su
authors.initials: GS
authors.lastname: Park
authors.forename: Bora
authors.initials: B
authors.lastname: Lee
authors.forename: Seungwu
authors.initials: S
authors.lastname: Han
authors.forename: Miyoung
authors.initials: M
authors.lastname: Kim
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang
mesh_terms: D003460:Crystallization; D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods*; D005583:Fourier Analysis; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010087:Oxides / Q000737:chemistry*; D013499:Surface Properties; D014025:Titanium / Q000737:chemistry*
chemical_list: D010087:Oxides; D014025:Titanium