title: Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.
abstract: By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.
authors.affiliation: Max Planck Institute of Microstructure Physics, Halle, Germany. deboor@mpi-halle.de
authors.forename: Johannes
authors.initials: J
authors.lastname: de Boor
authors.forename: Nadine
authors.initials: N
authors.lastname: Geyer
authors.forename: Jörg V
authors.initials: JV
authors.lastname: Wittemann
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
authors.forename: Volker
authors.initials: V
authors.lastname: Schmidt