title: Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires.
abstract: An ultrahigh field emission current density of 10.3 mA cm(-2) was obtained from nitrogen-implanted ZnO nanowires. The sample was characterized and clearly showed a nitrogen doping signal. Field emission properties of the ZnO nanowires were considerably improved after N-implantation with lower turn-on field and a much higher current density. Removal of an amorphous layer, the presence of nanoscale protuberances, and surface-related defects were found to be responsible for the significantly enhanced field emission. Our work is important for the possible applications of ZnO nanowires in flat panel displays and high brightness electron sources.
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, People's Republic of China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Zhao
authors.forename: Jingyun
authors.initials: J
authors.lastname: Gao
authors.forename: Rui
authors.initials: R
authors.lastname: Zhu
authors.forename: Tuocheng
authors.initials: T
authors.lastname: Cai
authors.forename: Sheng
authors.initials: S
authors.lastname: Wang
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Song
authors.forename: Zhimin
authors.initials: Z
authors.lastname: Liao
authors.forename: Xihong
authors.initials: X
authors.lastname: Chen
authors.forename: Dapeng
authors.initials: D
authors.lastname: Yu