title: Influence of backscattered electrons on the resolution of transmission secondary electron emitters.
abstract: The total number, energy, and angular distribution of backscattered electrons at 200-4000 V incident energy have been measured for clean (111)B GaAs surfaces. From the electron reflection data the modulalation transfer functions for transmission secondary electron emitters are calculated.
authors.forename: W
authors.initials: W
authors.lastname: Klein
authors.forename: M
authors.initials: M
authors.lastname: Harder
authors.forename: H
authors.initials: H
authors.lastname: Pollehn