title: Epitaxial layer thickness measurement by far infrared ellipsometry.
abstract: This paper outlines the development of an ellipsometer operating at far ir wavelength (118.6 microm). The system has been used to measure thickness of n-type silicon epitaxial layers grown on heavily doped n-type silicon substrate. It is shown that the technique provides accurate measurements for both thick (>3-microm) and thin (<3-microm) epitaxial layers, and when used in conjunction with near ir interference measurements, a measure of junction grading is obtained.
authors.forename: R O
authors.initials: RO
authors.lastname: Denicola
authors.forename: M A
authors.initials: MA
authors.lastname: Saifi
authors.forename: R E
authors.initials: RE
authors.lastname: Frazee