Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.
By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.
de Boor
Johannes
J
Max Planck Institute of Microstructure Physics, Halle, Germany. deboor@mpi-halle.de
Geyer
Nadine
N
Wittemann
Jörg V
JV
Gösele
Ulrich
U
Schmidt
Volker
V