Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.
Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.
López-Gejo
Juan
J
Department of Organic Chemistry, Faculty of Chemistry, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Arranz
Antonio
A
Navarro
Alvaro
A
Palacio
Carlos
C
Muñoz
Elías
E
Orellana
Guillermo
G
D002623:Chemistry Techniques, Analytical / Q000295:instrumentation*; D005708:Gallium / Q000737:chemistry*; D049408:Luminescent Agents / Q000737:chemistry*; D009942:Organometallic Compounds / Q000737:chemistry*; D056951:Photoelectron Spectroscopy; D012428:Ruthenium / Q000737:chemistry*; D012666:Semiconductors; D013499:Surface Properties
D049408:Luminescent Agents; D009942:Organometallic Compounds; C473348:gallium nitride; D012428:Ruthenium; D005708:Gallium