Synthesis of bandgap-controlled semiconducting single-walled carbon nanotubes.
Bandgap-controlled semiconducting single-walled carbon nanotubes (s-SWNTs) were synthesized using a uniquely designed catalytic layer (Al(2)O(3)/Fe/Al(2)O(3)) and conventional thermal chemical vapor deposition. Homogeneously sized Fe catalytic nanoparticles were prepared on the Al(2)O(3) layer and their sizes were controlled by simply modulating the annealing time via heat-driven diffusion and subsequent evaporation of Fe at 800 degrees C. Transmission electron microscopy and Raman spectroscopy revealed that the synthesized SWNTs diameter was manipulated from 1.4 to 0.8 nm with an extremely narrow diameter distribution below 0.1 nm as the annealing time is increased. As a result, the bandgap of semiconducting SWNTs was successfully controlled, ranging from 0.53 to 0.83 eV, with a sufficiently narrow energy distribution, which can be applied to field-effect transistors based on SWNTs.
Song
Wooseok
W
Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Jeon
Cheolho
C
Kim
Yoo Seok
YS
Kwon
Young Taek
YT
Jung
Dae Sung
DS
Jang
Sung Won
SW
Choi
Won Chel
WC
Park
Jin Sung
JS
Saito
Riichiro
R
Park
Chong-Yun
CY