Programmable direct-printing nanowire electronic components.
In order for recently developed advanced nanowire (NW) devices(1-5) to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensible. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,(6-8) we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned site, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.
Lee
Tae Il
TI
Department of Materials Science and Engineering, Yonsei University, Seoul, Korea.
Choi
Won Jin
WJ
Moon
Kyeong Ju
KJ
Choi
Ji Hyuk
JH
Kar
Jyoti Prakash
JP
Das
Sachindra Nath
SN
Kim
Youn Sang
YS
Baik
Hong Koo
HK
Myoung
Jae Min
JM
D003460:Crystallization / Q000379:methods*; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D012825:Silicon