title: [Research on SCB discharge behavior with atomic emission spectroscopy].
abstract: Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility. SCB discharge was diagnosticated with atomic emission spectroscopy. Firstly, discharge temperature was acquired with copper atom spectral lines 510.5 and 521.8 nm, and electron density was calculated with silicon atom spectral line 390.5 nm and corresponding ion line 413.0 nm. As for resistance 1.0 omega of SCB with the discharge voltage of 20 V and capacity of 47 microF, its discharge temperature was about 2 500-4 300 K and electron density 10(16) cm(-3). Meanwhile, the temperature and density V(s) time distributions were acquired simultaneously. And then with the diagnosis results, the discharge behaviors of two sorts of SCB were judged according to plasma space-dimension and time-dimension restrictions. This research set up an efficient technique for the diagnosis of transient small-size discharge behavior and provided instructions for the design of SCB and discharge condition.
authors.affiliation: School of Chemical Engineering, Nanjing University of Science & Technology, Nanjing 210094, China. l_njust@yahoo.com.cn
authors.forename: Lin
authors.initials: L
authors.lastname: Zhang
authors.forename: Hong-Yan
authors.initials: HY
authors.lastname: Feng
authors.forename: Shun-Guan
authors.initials: SG
authors.lastname: Zhu
authors.forename: Rong
authors.initials: R
authors.lastname: Wu
authors.forename: Wen-Chao
authors.initials: WC
authors.lastname: Zhang