title: Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon.
abstract: Understanding friction and wear at the nanoscale is important for many applications that involve nanoscale components sliding on a surface, such as nanolithography, nanometrology and nanomanufacturing. Defects, cracks and other phenomena that influence material strength and wear at macroscopic scales are less important at the nanoscale, which is why nanowires can, for example, show higher strengths than bulk samples. The contact area between the materials must also be described differently at the nanoscale. Diamond-like carbon is routinely used as a surface coating in applications that require low friction and wear because it is resistant to wear at the macroscale, but there has been considerable debate about the wear mechanisms of diamond-like carbon at the nanoscale because it is difficult to fabricate diamond-like carbon structures with nanoscale fidelity. Here, we demonstrate the batch fabrication of ultrasharp diamond-like carbon tips that contain significant amounts of silicon on silicon microcantilevers for use in atomic force microscopy. This material is known to possess low friction in humid conditions, and we find that, at the nanoscale, it is three orders of magnitude more wear-resistant than silicon under ambient conditions. A wear rate of one atom per micrometre of sliding on SiO(2) is demonstrated. We find that the classical wear law of Archard does not hold at the nanoscale; instead, atom-by-atom attrition dominates the wear mechanisms at these length scales. We estimate that the effective energy barrier for the removal of a single atom is approximately 1 eV, with an effective activation volume of approximately 1 x 10(-28) m.
authors.affiliation: IBM Research - Zurich, 8803 Rüschlikon, Switzerland. bharish@umd.edu
authors.forename: Harish
authors.initials: H
authors.lastname: Bhaskaran
authors.forename: Bernd
authors.initials: B
authors.lastname: Gotsmann
authors.forename: Abu
authors.initials: A
authors.lastname: Sebastian
authors.forename: Ute
authors.initials: U
authors.lastname: Drechsler
authors.forename: Mark A
authors.initials: MA
authors.lastname: Lantz
authors.forename: Michel
authors.initials: M
authors.lastname: Despont
authors.forename: Papot
authors.initials: P
authors.lastname: Jaroenapibal
authors.forename: Robert W
authors.initials: RW
authors.lastname: Carpick
authors.forename: Yun
authors.initials: Y
authors.lastname: Chen
authors.forename: Kumar
authors.initials: K
authors.lastname: Sridharan