title: Programmable direct-printing nanowire electronic components.
abstract: In order for recently developed advanced nanowire (NW) devices(1-5) to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensible. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,(6-8) we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned site, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, Korea.
authors.forename: Tae Il
authors.initials: TI
authors.lastname: Lee
authors.forename: Won Jin
authors.initials: WJ
authors.lastname: Choi
authors.forename: Kyeong Ju
authors.initials: KJ
authors.lastname: Moon
authors.forename: Ji Hyuk
authors.initials: JH
authors.lastname: Choi
authors.forename: Jyoti Prakash
authors.initials: JP
authors.lastname: Kar
authors.forename: Sachindra Nath
authors.initials: SN
authors.lastname: Das
authors.forename: Youn Sang
authors.initials: YS
authors.lastname: Kim
authors.forename: Hong Koo
authors.initials: HK
authors.lastname: Baik
authors.forename: Jae Min
authors.initials: JM
authors.lastname: Myoung
mesh_terms: D003460:Crystallization / Q000379:methods*; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon