Ion implanted photodiode detectors in epitaxial (Ga(x) In(1-x))As.
Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x) In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of 0 < x < 1. High values for quantum efficiency were obtained for the devices with a high value of x. Peak D(*)(lambda,f) of greater than 10(11) [cm(Hz)(1/2)/W] at room temperature was obtained at 0.8-microm wavelength, while a peak D(*)(lambda,f) of 5 x 10(10) [cm(Hz)(1/2)/W] was obtained at 165 K at 1.4-microm wavelength.
P K
PK
Ajmera
J R
JR
Hauser