Excess dissipation in a single-electron box: the Sisyphus resistance.
We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
Persson
F
F
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Goteborg, Sweden. fredrik.persson@chalmers.se
Wilson
C M
CM
Sandberg
M
M
Johansson
G
G
Delsing
P
P
D003198:Computer Simulation; D003217:Conductometry / Q000295:instrumentation*; D017097:Electric Impedance; D004579:Electron Transport; D004735:Energy Transfer; D008962:Models, Theoretical; D012542:Scattering, Radiation