A path to ultranarrow patterns using self-assembled lithography.
The templated self-assembly of block copolymer (BCP) thin films can generate regular arrays of 10-50 nm scale features with good positional and orientational accuracy, but the ordering, registration and pattern transfer of sub-10-nm feature sizes is not well established. Here, we report solvent-annealing and templating methods that enable the formation of highly ordered grating patterns with a line width of 8 nm and period 17 nm from a self-assembled poly(styrene-b-dimethylsiloxane) (PS-PDMS) diblock copolymer. The BCP patterns can be registered hierarchically on a larger-period BCP pattern, which can potentially diversify the available pattern geometries and enables precise pattern registration at small feature sizes. Sub-10-nm-wide tungsten nanowires with excellent order and uniformity were fabricated from the self-assembled patterns using a reactive ion etching process.
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
Yeon Sik
YS
Jung
J B
JB
Chang
Eric
E
Verploegen
Karl K
KK
Berggren
C A
CA
Ross
D003460:Crystallization / Q000379:methods*; D004129:Dimethylpolysiloxanes / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D009757:Nylons / Q000737:chemistry*; D010316:Particle Size; D011137:Polystyrenes / Q000737:chemistry*; D013499:Surface Properties; D014414:Tungsten / Q000737:chemistry*
D004129:Dimethylpolysiloxanes; D046911:Macromolecular Substances; D009757:Nylons; D011137:Polystyrenes; C085707:poly(dimethylsiloxane)-polyamide copolymer; D014414:Tungsten