100-GHz transistors from wafer-scale epitaxial graphene.
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com
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Lin
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Dimitrakopoulos
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Jenkins
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Farmer
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Chiu
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Avouris