Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors.
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
Zhai
Tianyou
T
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. zhai.tianyou@gmail.com
Fang
Xiaosheng
X
Liao
Meiyong
M
Xu
Xijin
X
Li
Liang
L
Liu
Baodan
B
Koide
Yasuo
Y
Ma
Ying
Y
Yao
Jiannian
J
Bando
Yoshio
Y
Golberg
Dmitri
D