Surface-energy engineering of graphene.
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69 degrees on SiC substrates to 92 degrees on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.
Department of Electrical Engineering and Computer Engineering, National University of Singapore, Singapore 117576.
Young Jun
YJ
Shin
Yingying
Y
Wang
Han
H
Huang
Gopinadhan
G
Kalon
Andrew Thye Shen
AT
Wee
Zexiang
Z
Shen
Charanjit Singh
CS
Bhatia
Hyunsoo
H
Yang