Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.
Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.
Bae
Joonho
J
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Kim
Hyunjin
H
Zhang
Xiao-Mei
XM
Dang
Cuong H
CH
Zhang
Yue
Y
Choi
Young Jin
YJ
Nurmikko
Arto
A
Wang
Zhong Lin
ZL