Parallel-aligned GaAs nanowires with 110 orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode.
We report parallel aligned GaAs nanowires (NWs) with 110 orientation laterally grown on [311]B substrates via the vapor-liquid-solid mode and demonstrate their controllability and growth mechanism. We control the size, density, and site of the lateral NWs by using size- and density-selective Au colloidal particles and Au dot arrays defined by electron-beam lithography. The lateral NWs grow only along the [110] and [Formula: see text] directions and formation of the stable facets of (111)B and (001) on the sides of the lateral NWs is crucial for lateral NW growth. We clarify the growth mechanism by comparing the growth results on [311]B, (311)A, and (001) substrates and the surface energy change of lateral and freestanding NWs.
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, Japan. zhang@will.brl.ntt.co.jp
Guoqiang
G
Zhang
Kouta
K
Tateno
Hideki
H
Gotoh
Hidetoshi
H
Nakano