title: Electrically accessible Lippmann hologram memory.
abstract: Using Fe-doped LiNbO(3) crystals we have constructed Lippmann-type holograms where access both in writing and in reading is performed electrically. Discussions are given for the interlayer cross talks in a stacked structure. Device operations are demonstrated with a double-layered memory.
authors.forename: T
authors.initials: T
authors.lastname: Yasuhira
authors.forename: Y
authors.initials: Y
authors.lastname: Mitsuhashi
authors.forename: T
authors.initials: T
authors.lastname: Morikawa
authors.forename: J
authors.initials: J
authors.lastname: Shimada
authors.forename: T
authors.initials: T
authors.lastname: Kamijo