title: Dynamic saturation in Semiconductor Optical Amplifiers: accurate model, role of carrier density, and slow light.
abstract: We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.
authors.affiliation: Thales Research & Technology, 1 av. Augustin Fresnel, Palaiseau Cedex, France. Perrine.Berger@thalesgroup.com
authors.forename: Perrine
authors.initials: P
authors.lastname: Berger
authors.forename: Mehdi
authors.initials: M
authors.lastname: Alouini
authors.forename: Jérôme
authors.initials: J
authors.lastname: Bourderionnet
authors.forename: Fabien
authors.initials: F
authors.lastname: Bretenaker
authors.forename: Daniel
authors.initials: D
authors.lastname: Dolfi
mesh_terms: D000669:Amplifiers, Electronic; D003198:Computer Simulation; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008962:Models, Theoretical; D055096:Optical Devices; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity