title: Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes.
abstract: We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10(+4) cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO(2)/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air.
authors.affiliation: Dipartimento di Fisica E R Caianiello and Centro Interdipartimentale di Ricerca NANOMATES, Università di Salerno, 84084 Fisciano (Sa), Italy. dibant@sa.infn.it
authors.forename: Antonio
authors.initials: A
authors.lastname: Di Bartolomeo
authors.forename: Mohamed
authors.initials: M
authors.lastname: Rinzan
authors.forename: Anthony K
authors.initials: AK
authors.lastname: Boyd
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Yang
authors.forename: Liberata
authors.initials: L
authors.lastname: Guadagno
authors.forename: Filippo
authors.initials: F
authors.lastname: Giubileo
authors.forename: Paola
authors.initials: P
authors.lastname: Barbara