Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon.
A Schottky contact detector comprising a symmetric metal stripe buried in Si, capable of detecting surface plasmons at wavelengths below the bandgap of Si, is described. A model for the detector is proposed, and its performance is assessed at lambda(0)=1550 nm assuming a CoSi(2) stripe in p-type Si. End-fire coupled responsivities of about 0.1 A/W and minimum detectable powers of about -20 dBm are predicted at room temperature.
Scales
Christine
C
Department of National Defence, Centre for Operational Research and Analysis, 101 Colonel By Drive, Ottawa,Ontario K2A 0K1, Canada.
Breukelaar
Ian
I
Berini
Pierre
P