High-performance single nanowire tunnel diodes.
We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.
Wallentin
Jesper
J
Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. jesper.wallentin@ftf.lth.se
Persson
Johan M
JM
Wagner
Jakob B
JB
Samuelson
Lars
L
Deppert
Knut
K
Borgström
Magnus T
MT
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
D046911:Macromolecular Substances