title: The resonant body transistor.
abstract: This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achieves >10 GHz frequencies and can be integrated into a standard CMOS process for on-chip clock generation, high-Q microwave circuits, fundamental quantum-state preparation and observation, and high-sensitivity measurements. An 11.7 GHz bulk-mode RBT is demonstrated with a quality factor Q of 1830, marking the highest frequency acoustic resonance measured to date on a silicon wafer.
authors.affiliation: Cornell University, Ithaca, New York 14853, USA. dana@mtl.mit.edu
authors.forename: Dana
authors.initials: D
authors.lastname: Weinstein
authors.forename: Sunil A
authors.initials: SA
authors.lastname: Bhave
mesh_terms: D008872:Microwaves; D036103:Nanotechnology / Q000295:instrumentation*; D011789:Quantum Theory; D012825:Silicon / Q000737:chemistry
chemical_list: D012825:Silicon