Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.
Cho
Chu-Young
CY
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea.
Lee
Jin-Bock
JB
Lee
Sang-Jun
SJ
Han
Sang-Heon
SH
Park
Tae-Young
TY
Kim
Je Won
JW
Kim
Yong Chun
YC
Park
Seong-Ju
SJ
D003460:Crystallization / Q000379:methods*; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*
D007204:Indium; C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium