title: Nanowire transistors without junctions.
abstract: All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
authors.affiliation: Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland. jean-pierre.colinge@tyndall.ie
authors.forename: Jean-Pierre
authors.initials: JP
authors.lastname: Colinge
authors.forename: Chi-Woo
authors.initials: CW
authors.lastname: Lee
authors.forename: Aryan
authors.initials: A
authors.lastname: Afzalian
authors.forename: Nima Dehdashti
authors.initials: ND
authors.lastname: Akhavan
authors.forename: Ran
authors.initials: R
authors.lastname: Yan
authors.forename: Isabelle
authors.initials: I
authors.lastname: Ferain
authors.forename: Pedram
authors.initials: P
authors.lastname: Razavi
authors.forename: Brendan
authors.initials: B
authors.lastname: O'Neill
authors.forename: Alan
authors.initials: A
authors.lastname: Blake
authors.forename: Mary
authors.initials: M
authors.lastname: White
authors.forename: Anne-Marie
authors.initials: AM
authors.lastname: Kelleher
authors.forename: Brendan
authors.initials: B
authors.lastname: McCarthy
authors.forename: Richard
authors.initials: R
authors.lastname: Murphy