Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers.
Luminescent SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently laser crystallization of ultrathin amorphous Si-rich SiN sublayers. The cross-sectional TEM analysis reveals that grain size of Si nanocrystals embedded in the Si-rich SiN sublayers is independent of the laser fluence, while the grain density can be well controlled by the laser fluence. The devices containing the laser crystallized multilayers show a low turn-on voltage of 5 V and exhibit strong green light emission under both optical and electrical excitations. Moreover, the device after laser-irradiated at 554 mJ/cm(2) shows a significantly enhanced EL intensity as well as external quantum efficiency compared with the device without laser irradiation. The EL mechanism is suggested from the bipolar recombination of electron-hole pairs at Si nanocrystals. The improved performance of the devices was discussed.
Huang
R
R
State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, People's Republic of China. rhuang@hstc.edu.cn
Wang
D Q
DQ
Ding
H L
HL
Wang
X
X
Chen
K J
KJ
Xu
J
J
Guo
Y Q
YQ
Song
J
J
Ma
Z Y
ZY
D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D008567:Membranes, Artificial; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry* / Q000528:radiation effects
D008567:Membranes, Artificial; D017655:Silicon Compounds; C032734:silicon nitride