title: Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers.
abstract: Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.
authors.affiliation: Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany. roehle@hhi.fraunhofer.de
authors.forename: H
authors.initials: H
authors.lastname: Roehle
authors.forename: R J B
authors.initials: RJ
authors.lastname: Dietz
authors.forename: H J
authors.initials: HJ
authors.lastname: Hensel
authors.forename: J
authors.initials: J
authors.lastname: Böttcher
authors.forename: H
authors.initials: H
authors.lastname: Künzel
authors.forename: D
authors.initials: D
authors.lastname: Stanze
authors.forename: M
authors.initials: M
authors.lastname: Schell
authors.forename: B
authors.initials: B
authors.lastname: Sartorius