Far infrared recombination radiation from n-type Hg(1-x)Cd(x) Te.
Far infrared emission is observed when electric fields are applied to n-type Hg(1-x)Cd(x) Te compounds. The intensity varies linearly with the electric field. The spectral analysis of the radiation carried out by Fourier spectroscopy reveals one emission line at 121 cm(-1) and a broadband above 150 cm(-1). The application of strong magnetic fields does not influence the spectral distribution. We explain the emission due to transitions between levels of lattice defects and the valence band. These levels observed with n-type samples are in agreement with acceptor states deduced from experiments with p-type material.
Tyssen
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Nimtz
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