Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes.
We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10(+4) cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO(2)/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air.
Di Bartolomeo
Antonio
A
Dipartimento di Fisica E R Caianiello and Centro Interdipartimentale di Ricerca NANOMATES, Università di Salerno, 84084 Fisciano (Sa), Italy. dibant@sa.infn.it
Rinzan
Mohamed
M
Boyd
Anthony K
AK
Yang
Yanfei
Y
Guadagno
Liberata
L
Giubileo
Filippo
F
Barbara
Paola
P