Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates.
GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.
Liu
Yi-Jung
YJ
Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, University Road, Taiwan, Taiwan, 70101, Republic of China.
Tsai
Tsung-Yuan
TY
Yen
Chih-Hung
CH
Chen
Li-Yang
LY
Tsai
Tsung-Han
TH
Huang
Chien-Chang
CC
Chen
Tai-You
TY
Hsu
Chi-Hsiang
CH
Liu
Wen-Chau
WC