title: Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates.
abstract: GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.
authors.affiliation: Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, University Road, Taiwan, Taiwan, 70101, Republic of China.
authors.forename: Yi-Jung
authors.initials: YJ
authors.lastname: Liu
authors.forename: Tsung-Yuan
authors.initials: TY
authors.lastname: Tsai
authors.forename: Chih-Hung
authors.initials: CH
authors.lastname: Yen
authors.forename: Li-Yang
authors.initials: LY
authors.lastname: Chen
authors.forename: Tsung-Han
authors.initials: TH
authors.lastname: Tsai
authors.forename: Chien-Chang
authors.initials: CC
authors.lastname: Huang
authors.forename: Tai-You
authors.initials: TY
authors.lastname: Chen
authors.forename: Chi-Hsiang
authors.initials: CH
authors.lastname: Hsu
authors.forename: Wen-Chau
authors.initials: WC
authors.lastname: Liu