Direct patterning of silicon oxide on Si-substrate induced by femtosecond laser.
In this study we report for the first time a method for direct patterning of silicon oxide on a silicon substrate by irradiation with a femtosecond laser of Mega Hertz pulse frequency under ambient condition. Embossed lines of silicon oxide with around 3 approximately 4 microm width and less than 100 nm height were formed by controlling the parameters such as laser pulse power and frequency rate. A Scanning Electron Microscope (SEM), an optical microscopy and a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy were used to analyze the silicon oxide layer.
Kiani
Amirkianoosh
A
Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, ON, M5B 2K3 Canada.
Venkatakrishnan
Krishnan
K
Tan
Bo
B