title: Design of a short electro-optic modulator based on SiGe HBT structure.
abstract: A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.
authors.affiliation: Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA.
authors.forename: Shengling
authors.initials: S
authors.lastname: Deng
authors.forename: Tuhin G
authors.initials: TG
authors.lastname: Neogi
authors.forename: Joseph
authors.initials: J
authors.lastname: Novak
authors.forename: John
authors.initials: J
authors.lastname: McDonald
authors.forename: Rena
authors.initials: R
authors.lastname: Huang