title: Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
abstract: We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.
authors.affiliation: Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea.
authors.forename: Chu-Young
authors.initials: CY
authors.lastname: Cho
authors.forename: Jin-Bock
authors.initials: JB
authors.lastname: Lee
authors.forename: Sang-Jun
authors.initials: SJ
authors.lastname: Lee
authors.forename: Sang-Heon
authors.initials: SH
authors.lastname: Han
authors.forename: Tae-Young
authors.initials: TY
authors.lastname: Park
authors.forename: Je Won
authors.initials: JW
authors.lastname: Kim
authors.forename: Yong Chun
authors.initials: YC
authors.lastname: Kim
authors.forename: Seong-Ju
authors.initials: SJ
authors.lastname: Park
mesh_terms: D003460:Crystallization / Q000379:methods*; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D007204:Indium; C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium