title: High-performance single nanowire tunnel diodes.
abstract: We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.
authors.affiliation: Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden. jesper.wallentin@ftf.lth.se
authors.forename: Jesper
authors.initials: J
authors.lastname: Wallentin
authors.forename: Johan M
authors.initials: JM
authors.lastname: Persson
authors.forename: Jakob B
authors.initials: JB
authors.lastname: Wagner
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson
authors.forename: Knut
authors.initials: K
authors.lastname: Deppert
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances