25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode.
We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.
Chen
Hui-Wen
HW
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. hwchen@ece.ucsb.edu
Kuo
Ying-hao
YH
Bowers
John E
JE
D025802:Electric Capacitance; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008872:Microwaves; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers