Temperature dependence of the thermal conductivity of thin silicon nanowires.
We compute the lattice thermal conductivity (kappa) of silicon nanowires as a function of temperature by molecular dynamics simulations. In wires with amorphous surfaces kappa may reach values close to that of amorphous silicon and is nearly constant between 200 and 600 K; this behavior is determined by the presence of a majority of nonpropagating vibrational modes. We develop a parameter-free model that accounts for the temperature dependence observed in our simulations and provides a qualitative explanation of recent experiments.
Donadio
Davide
D
Department of Chemistry, University of California Davis, One Shields Avenue, avis, California 95616, USA. ddonadio@ucdavis.edu
Galli
Giulia
G
D003198:Computer Simulation; D008956:Models, Chemical; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013696:Temperature; D013814:Thermal Conductivity
D012825:Silicon