title: Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography.
abstract: We designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO(2) square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level.
authors.affiliation: NanoStructures Laboratory, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
authors.forename: Wen-Di
authors.initials: WD
authors.lastname: Li
authors.forename: Stephen Y
authors.initials: SY
authors.lastname: Chou
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005374:Filtration / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D010781:Photography / Q000379:methods; D012031:Refractometry / Q000295:instrumentation*; D012822:Silicon Dioxide / Q000737:chemistry; D012993:Solar Energy; D014466:Ultraviolet Rays
chemical_list: D012822:Silicon Dioxide; D000535:Aluminum