title: 25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode.
abstract: We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.
authors.affiliation: Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. hwchen@ece.ucsb.edu
authors.forename: Hui-Wen
authors.initials: HW
authors.lastname: Chen
authors.forename: Ying-hao
authors.initials: YH
authors.lastname: Kuo
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers
mesh_terms: D025802:Electric Capacitance; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008872:Microwaves; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers