Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers.
The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K(alpha)0.28 keV and Al K(alpha)1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K(alpha) (approximately 6 nm rms) is significantly larger than approximately 1 nm at Al K(alpha). This can be explained by different coherent lengths at two energies.
Mitsuishi
Ikuyuki
I
Department of High Energy Astrophysics, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan. mitsuisi@astro.isas.jaxa.jp
Ezoe
Yuichiro
Y
Koshiishi
Masaki
M
Mita
Makoto
M
Maeda
Yoshitomo
Y
Yamasaki
Noriko Y
NY
Mitsuda
Kazuhisa
K
Shirata
Takayuki
T
Hayashi
Takayuki
T
Takano
Takayuki
T
Maeda
Ryutaro
R