Measurement of intermodulation distortion in high-linearity photodiodes.
Accurately characterizing third order intermodulation distortion (IMD3) in high-linearity photodiodes is challenging. Two measurement techniques are evaluated-a standard two-tone measurement and a more complicated three-tone measurement technique to measure IMD3. A model of the measurement system is developed and used to analyze the limitations of the two techniques in determining the distortion of highly linear photodiodes. Experimental validation is provided by comparing the simulation trends with IMD3 results measured on two types of waveguide photodiodes: 1) an InP based uni-traveling-carrier (UTC) photodiode and 2) a Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate.
Ramaswamy
Anand
A
Department of Electrical & Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA. anand@ece.ucsb.edu
Nunoya
Nobuhiro
N
Williams
Keith J
KJ
Klamkin
Jonathan
J
Piels
Molly
M
Johansson
Leif A
LA
Hastings
A
A
Coldren
Larry A
LA
Bowers
John E
JE