title: Semiconductor lasers with a thin active layer (>0.1 microm for optical communications.
abstract: Double heterostructure lasers with a thin active layer have been investigated. Device parameters have been optimized for using laser diodes as light sources in optical communication systems. Threshold current density takes a minimum value for an active layer thickness of around 800 A in the case of undoped active layers. Full width of beam divergence for active layer thicknesses smaller than 0.1 microm is smaller than 30 degrees , and the resultant coupling efficiency into an optical fiber of a numeric aperture as small as 0.05 is 50% on the average and is 80% at maximum in conjunction with a focusing lens. Other features of the thin active layer discussed are polarization and available output powers.
authors.forename: N
authors.initials: N
authors.lastname: Chinone
authors.forename: H
authors.initials: H
authors.lastname: Nakashima
authors.forename: I
authors.initials: I
authors.lastname: Ikushima
authors.forename: R
authors.initials: R
authors.lastname: Ito