title: Fabrication and characterization of freestanding circular GaN gratings.
abstract: It's of significant interest to combine freestanding nanostructure with active gallium nitride (GaN) material for surface-emitting optoelectronic application. By utilizing bulk micromachining of silicon, we demonstrate here a promising way to fabricate freestanding GaN nanostructures using a GaN-on-silicon system. The well-defined nanoscale circular GaN gratings are realized by fast-atom beam (FAB) etching, and the freestanding GaN gratings are obtained by removing silicon substrate using deep reactive ion etching (DRIE). The freestanding GaN slab is thinned from the backside by FAB etching to reduce the confined modes inside the GaN slab. The measured microphotoluminescence (micro-PL) spectra experimentally demonstrate significant enhancements in peak intensity and integrated intensity by introducing freestanding circular grating. This work represents an important step in combining GaN-based active material with freestanding nanostructures for further increasing light-extraction efficiency.
authors.affiliation: Department of nanomechanics, Tohoku University, Sendai, Japan. wang@hane.mech.tohoku.ac.jp
authors.forename: Yongjin
authors.initials: Y
authors.lastname: Wang
authors.forename: Fangren
authors.initials: F
authors.lastname: Hu
authors.forename: Hidehisa
authors.initials: H
authors.lastname: Sameshima
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Hane
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D012031:Refractometry / Q000295:instrumentation*
chemical_list: C473348:gallium nitride; D005708:Gallium