title: Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure.
abstract: We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and "post-mortem" by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.
authors.affiliation: FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, Nieuwegein, The Netherlands.
authors.forename: A R
authors.initials: AR
authors.lastname: Khorsand
authors.forename: R
authors.initials: R
authors.lastname: Sobierajski
authors.forename: E
authors.initials: E
authors.lastname: Louis
authors.forename: S
authors.initials: S
authors.lastname: Bruijn
authors.forename: E D
authors.initials: ED
authors.lastname: van Hattum
authors.forename: R W E
authors.initials: RW
authors.lastname: van de Kruijs
authors.forename: M
authors.initials: M
authors.lastname: Jurek
authors.forename: D
authors.initials: D
authors.lastname: Klinger
authors.forename: J B
authors.initials: JB
authors.lastname: Pelka
authors.forename: L
authors.initials: L
authors.lastname: Juha
authors.forename: T
authors.initials: T
authors.lastname: Burian
authors.forename: J
authors.initials: J
authors.lastname: Chalupsky
authors.forename: J
authors.initials: J
authors.lastname: Cihelka
authors.forename: V
authors.initials: V
authors.lastname: Hajkova
authors.forename: L
authors.initials: L
authors.lastname: Vysin
authors.forename: U
authors.initials: U
authors.lastname: Jastrow
authors.forename: N
authors.initials: N
authors.lastname: Stojanovic
authors.forename: S
authors.initials: S
authors.lastname: Toleikis
authors.forename: H
authors.initials: H
authors.lastname: Wabnitz
authors.forename: K
authors.initials: K
authors.lastname: Tiedtke
authors.forename: K
authors.initials: K
authors.lastname: Sokolowski-Tinten
authors.forename: U
authors.initials: U
authors.lastname: Shymanovich
authors.forename: J
authors.initials: J
authors.lastname: Krzywinski
authors.forename: S
authors.initials: S
authors.lastname: Hau-Riege
authors.forename: R
authors.initials: R
authors.lastname: London
authors.forename: A
authors.initials: A
authors.lastname: Gleeson
authors.forename: E M
authors.initials: EM
authors.lastname: Gullikson
authors.forename: F
authors.initials: F
authors.lastname: Bijkerk
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008567:Membranes, Artificial; D008982:Molybdenum / Q000737:chemistry* / Q000528:radiation effects*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*; D014466:Ultraviolet Rays
chemical_list: D008567:Membranes, Artificial; D008982:Molybdenum; D012825:Silicon