title: Direct patterning of silicon oxide on Si-substrate induced by femtosecond laser.
abstract: In this study we report for the first time a method for direct patterning of silicon oxide on a silicon substrate by irradiation with a femtosecond laser of Mega Hertz pulse frequency under ambient condition. Embossed lines of silicon oxide with around 3 approximately 4 microm width and less than 100 nm height were formed by controlling the parameters such as laser pulse power and frequency rate. A Scanning Electron Microscope (SEM), an optical microscopy and a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy were used to analyze the silicon oxide layer.
authors.affiliation: Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, ON, M5B 2K3 Canada.
authors.forename: Amirkianoosh
authors.initials: A
authors.lastname: Kiani
authors.forename: Krishnan
authors.initials: K
authors.lastname: Venkatakrishnan
authors.forename: Bo
authors.initials: B
authors.lastname: Tan