title: Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers.
abstract: Luminescent SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently laser crystallization of ultrathin amorphous Si-rich SiN sublayers. The cross-sectional TEM analysis reveals that grain size of Si nanocrystals embedded in the Si-rich SiN sublayers is independent of the laser fluence, while the grain density can be well controlled by the laser fluence. The devices containing the laser crystallized multilayers show a low turn-on voltage of 5 V and exhibit strong green light emission under both optical and electrical excitations. Moreover, the device after laser-irradiated at 554 mJ/cm(2) shows a significantly enhanced EL intensity as well as external quantum efficiency compared with the device without laser irradiation. The EL mechanism is suggested from the bipolar recombination of electron-hole pairs at Si nanocrystals. The improved performance of the devices was discussed.
authors.affiliation: State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, People's Republic of China. rhuang@hstc.edu.cn
authors.forename: R
authors.initials: R
authors.lastname: Huang
authors.forename: D Q
authors.initials: DQ
authors.lastname: Wang
authors.forename: H L
authors.initials: HL
authors.lastname: Ding
authors.forename: X
authors.initials: X
authors.lastname: Wang
authors.forename: K J
authors.initials: KJ
authors.lastname: Chen
authors.forename: J
authors.initials: J
authors.lastname: Xu
authors.forename: Y Q
authors.initials: YQ
authors.lastname: Guo
authors.forename: J
authors.initials: J
authors.lastname: Song
authors.forename: Z Y
authors.initials: ZY
authors.lastname: Ma
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D008163:Luminescent Measurements / Q000295:instrumentation*; D008567:Membranes, Artificial; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D017655:Silicon Compounds; C032734:silicon nitride