Atomic layers of hybridized boron nitride and graphene domains.
Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.
Ci
Lijie
L
Department of Mechanical Engineering & Materials Science, Rice University, Houston, Texas 77005, USA.
Song
Li
L
Jin
Chuanhong
C
Jariwala
Deep
D
Wu
Dangxin
D
Li
Yongjie
Y
Srivastava
Anchal
A
Wang
Z F
ZF
Storr
Kevin
K
Balicas
Luis
L
Liu
Feng
F
Ajayan
Pulickel M
PM