title: InGaZnO semiconductor thin film fabricated using pulsed laser deposition.
abstract: The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.
authors.affiliation: College of Applied Sciences, Beijing University of technology, Beijing, China.
authors.forename: Jiangbo
authors.initials: J
authors.lastname: Chen
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: Xueqiong
authors.initials: X
authors.lastname: Su
authors.forename: Le
authors.initials: L
authors.lastname: Kong
authors.forename: Guoqing
authors.initials: G
authors.lastname: Liu
authors.forename: Xinping
authors.initials: X
authors.lastname: Zhang
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D008567:Membranes, Artificial; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D007204:Indium; D005708:Gallium; D015034:Zinc Oxide