title: A low-temperature-grown TiO2-based device for the flexible stacked RRAM application.
abstract: Flexible TiO(2) crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO(2)/Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10(4) cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO(2)/Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.
authors.affiliation: Department of Materials Science and Engineering, KAIST, Daejeon, Korea.
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.forename: Yong In
authors.initials: YI
authors.lastname: Kim
authors.forename: Jeong Yong
authors.initials: JY
authors.lastname: Lee
authors.forename: Sung-Yool
authors.initials: SY
authors.lastname: Choi