title: ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect.
abstract: A zinc oxide nanowire (ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.
authors.affiliation: Nano-Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon, Korea. joonkim@kimm.re.kr
authors.forename: Joondong
authors.initials: J
authors.lastname: Kim
authors.forename: Ju-Hyung
authors.initials: JH
authors.lastname: Yun
authors.forename: Chang Hyun
authors.initials: CH
authors.lastname: Kim
authors.forename: Yun Chang
authors.initials: YC
authors.lastname: Park
authors.forename: Ju Yeon
authors.initials: JY
authors.lastname: Woo
authors.forename: Jeunghee
authors.initials: J
authors.lastname: Park
authors.forename: Jung-Ho
authors.initials: JH
authors.lastname: Lee
authors.forename: Junsin
authors.initials: J
authors.lastname: Yi
authors.forename: Chang-Soo
authors.initials: CS
authors.lastname: Han