InGaZnO semiconductor thin film fabricated using pulsed laser deposition.
The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.
Chen
Jiangbo
J
College of Applied Sciences, Beijing University of technology, Beijing, China.
Wang
Li
L
Su
Xueqiong
X
Kong
Le
L
Liu
Guoqing
G
Zhang
Xinping
X
D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D007204:Indium / Q000737:chemistry* / Q000528:radiation effects; D007834:Lasers; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D008567:Membranes, Artificial; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
D008567:Membranes, Artificial; D007204:Indium; D005708:Gallium; D015034:Zinc Oxide