title: Terahertz dual-band resonator on silicon.
abstract: We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3 THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37 THz, respectively. The first resonance has a bandwidth of 0.56 THz, while the second one has a bandwidth of 0.70 THz. These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.
authors.affiliation: Department of Electrical and Electronic Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, UK.
authors.forename: Yong
authors.initials: Y
authors.lastname: Ma
authors.forename: Qin
authors.initials: Q
authors.lastname: Chen
authors.forename: A
authors.initials: A
authors.lastname: Khalid
authors.forename: Shimul C
authors.initials: SC
authors.lastname: Saha
authors.forename: David R S
authors.initials: DR
authors.lastname: Cumming