Nanowire transistors without junctions.
All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms, such junctions represent an increasingly difficult fabrication challenge for the semiconductor industry. Here, we propose and demonstrate a new type of transistor in which there are no junctions and no doping concentration gradients. These devices have full CMOS functionality and are made using silicon nanowires. They have near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Colinge
Jean-Pierre
JP
Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland. jean-pierre.colinge@tyndall.ie
Lee
Chi-Woo
CW
Afzalian
Aryan
A
Akhavan
Nima Dehdashti
ND
Yan
Ran
R
Ferain
Isabelle
I
Razavi
Pedram
P
O'Neill
Brendan
B
Blake
Alan
A
White
Mary
M
Kelleher
Anne-Marie
AM
McCarthy
Brendan
B
Murphy
Richard
R