Nonvolatile memory devices based on few-layer graphene films.
We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.
Doh
Yong-Joo
YJ
Department of Display and Semiconductor Physics, Sejong Campus, Korea University, Chungnam-Do 339-800, Republic of Korea.
Yi
Gyu-Chul
GC