Design of a short electro-optic modulator based on SiGe HBT structure.
A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.
Deng
Shengling
S
Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA.
Neogi
Tuhin G
TG
Novak
Joseph
J
McDonald
John
J
Huang
Rena
R