Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.
A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.
Chen
Yungting
Y
Department of Physics, National Taiwan University, Taipei 106, Taiwan. yfchen@phys.ntu.edu.tw
Cheng
Tzuhuan
T
Cheng
Chungliang
C
Wang
Chunhsiung
C
Chen
Chihwei
C
Wei
Chihming
C
Chen
Yangfang
Y
D000537:Aluminum Oxide / Q000737:chemistry* / Q000528:radiation effects*; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D016062:Porosity; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity
D008567:Membranes, Artificial; D000537:Aluminum Oxide