Electrically accessible Lippmann hologram memory.
Using Fe-doped LiNbO(3) crystals we have constructed Lippmann-type holograms where access both in writing and in reading is performed electrically. Discussions are given for the interlayer cross talks in a stacked structure. Device operations are demonstrated with a double-layered memory.
Yasuhira
T
T
Mitsuhashi
Y
Y
Morikawa
T
T
Shimada
J
J
Kamijo
T
T