title: Analysis of photogenerated random telegraph signal in single electron detector (photo-SET).
abstract: In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.
authors.affiliation: Institut des Nanotechnologies de Lyon (site INSA UMR 5270), Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France. manel.troudi@ipein.rnu.tn
authors.forename: M
authors.initials: M
authors.lastname: Troudi
authors.forename: Na
authors.initials: N
authors.lastname: Sghaier
authors.forename: A
authors.initials: A
authors.lastname: Kalboussi
authors.forename: A
authors.initials: A
authors.lastname: Souifi
mesh_terms: D017076:Computer-Aided Design; D004583:Electrons; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D055096:Optical Devices; D045663:Quantum Dots; D015203:Reproducibility of Results; D012666:Semiconductors; D012680:Sensitivity and Specificity; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014159:Transducers