title: Doped graphene as tunable electron-phonon coupling material.
abstract: We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
authors.affiliation: ETSF Scientific Development Centre, Departamento Fisica de Materiales, Universidad del Pais Vasco, San Sebastian, Spain. claudio.attaccalite@grenoble.cnrs.fr
authors.forename: Claudio
authors.initials: C
authors.lastname: Attaccalite
authors.forename: Ludger
authors.initials: L
authors.lastname: Wirtz
authors.forename: Michele
authors.initials: M
authors.lastname: Lazzeri
authors.forename: Francesco
authors.initials: F
authors.lastname: Mauri
authors.forename: Angel
authors.initials: A
authors.lastname: Rubio
mesh_terms: D004583:Electrons; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D014732:Vibration
chemical_list: D006108:Graphite