Near- and far-field characterization of diode lasers.
A novel experimental apparatus to record the near-field intensity distribution on the output facet of a laser diode along with the capability of displaying both the near- and far-field patterns is described. The overall optical magnification is 375 and the recorded near-field distribution is limited to a resolution of about 0.5,microm on the mirror face, primarily as a result of diffraction. Also described here is a device to record far-field distribution to 0.5 degrees accuracy. With the aid of a calibrated photodiode, the output power vs peak current characteristics can also be recorded.
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