title: Ge-on-Si laser operating at room temperature.
abstract: Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.
authors.affiliation: MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA. jfliu01@mit.edu
authors.forename: Jifeng
authors.initials: J
authors.lastname: Liu
authors.forename: Xiaochen
authors.initials: X
authors.lastname: Sun
authors.forename: Rodolfo
authors.initials: R
authors.lastname: Camacho-Aguilera
authors.forename: Lionel C
authors.initials: LC
authors.lastname: Kimerling
authors.forename: Jurgen
authors.initials: J
authors.lastname: Michel