Probing strain in bent semiconductor nanowires with Raman spectroscopy.
We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.
Chen
Jianing
J
The Nanometer Structure Consortium/Division of Solid State Physics, Lund University, Sweden.
Conache
Gabriela
G
Pistol
Mats-Erik
ME
Gray
Struan M
SM
Borgström
Magnus T
MT
Xu
Hongxing
H
Xu
H Q
HQ
Samuelson
Lars
L
Håkanson
Ulf
U
D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D036103:Nanotechnology / Q000295:instrumentation; D053770:Nanowires / Q000737:chemistry*; D010720:Phosphines / Q000737:chemistry*; D012666:Semiconductors; D013059:Spectrum Analysis, Raman
D010720:Phosphines; D007204:Indium; C090882:indium phosphide