GaN nanowire arrays for high-output nanogenerators.
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is approximately 62 degrees . The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs.
Huang
Chi-Te
CT
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Song
Jinhui
J
Lee
Wei-Fan
WF
Ding
Yong
Y
Gao
Zhiyuan
Z
Hao
Yue
Y
Chen
Lih-Juann
LJ
Wang
Zhong Lin
ZL