title: Nanoscale memristor device as synapse in neuromorphic systems.
abstract: A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Michigan, Michigan 48109, USA.
authors.forename: Sung Hyun
authors.initials: SH
authors.lastname: Jo
authors.forename: Ting
authors.initials: T
authors.lastname: Chang
authors.forename: Idongesit
authors.initials: I
authors.lastname: Ebong
authors.forename: Bhavitavya B
authors.initials: BB
authors.lastname: Bhadviya
authors.forename: Pinaki
authors.initials: P
authors.lastname: Mazumder
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
mesh_terms: D036103:Nanotechnology / Q000295:instrumentation* / Q000379:methods; D016571:Neural Networks, Computer; D009474:Neurons; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry; D012834:Silver / Q000737:chemistry; D013569:Synapses
chemical_list: D012834:Silver; D012825:Silicon