title: Edge coupling of a GaAlAs DH laser diode to a planar Ti:LiNbO(3) waveguide.
abstract: The problem of edge coupling a double-heterostructure GaAlAs laser diode to a planar titanium indiffused LiNbO(3) waveguide has been studied both experimentally and theoretically. Alignment sensitivities (3-dB points) have been measured and found to be ~15 and 1 microm in the longitudinal and transverse directions, respectively. The dependence of the coupling efficiency on misalignments has been found to be in good agreement with the predictions of a simple Gaussian coupling model. In addition, a prototype coupler has been fabricated in a flip-chip configuration on a silicon substrate with ~15% coupling efficiency into the waveguide's fundamental mode.
authors.forename: D G
authors.initials: DG
authors.lastname: Hall
authors.forename: J D
authors.initials: JD
authors.lastname: Spear-Zino
authors.forename: H G
authors.initials: HG
authors.lastname: Koenig
authors.forename: R R
authors.initials: RR
authors.lastname: Rice
authors.forename: J K
authors.initials: JK
authors.lastname: Powers
authors.forename: G H
authors.initials: GH
authors.lastname: Burkhart
authors.forename: P D
authors.initials: PD
authors.lastname: Bear