title: Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential.
abstract: We design and experimentally report strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential. At a lower applied electric field (F=50 kV/cm), the calculated blueshift of the lowest excitonic peak is 40.6 meV. In the room-temperature photocurrent experiments, a maximum upward shift of the apparent peak position of more than 35 meV is observed with an external reverse bias of -4 V. Furthermore, a lower absorption loss (alpha=9.8 cm(-1)) and a large negative refractive index change (Deltan=-0.0095) are obtained at 1.55 mum. This indicates that the strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential have a great potential for application to reflection type electro-optical switches.
authors.affiliation: College of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China. xuzhixin19721005@yahoo.com.cn
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Xu
authors.forename: Changrong
authors.initials: C
authors.lastname: Wang
authors.forename: Wei
authors.initials: W
authors.lastname: Qi
authors.forename: Zhefeng
authors.initials: Z
authors.lastname: Yuan