title: Piezoelectric aluminum nitride resonator for oscillator.
abstract: This work investigates properties of the thin film elongation acoustic resonator (TFEAR) operating at megahertz frequencies in air. This resonator is composed of a piezoelectric layer of AlN sandwiched between 2 Al electrodes. TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D finite element method (3D-FEM) analysis using ANSYS software has been performed to model static modal and harmonic behavior of the TFEAR. To consider insertion losses into the substrate, equivalent electrical models based on a modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization setup is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factors Q as high as 2500 in air have been recorded with motional resistance lower than 400 ohms. A first oscillator based on a TFEAR resonator was also designed and tested.
authors.affiliation: NXP Semiconductors, Caen, France. olivier.mareschal@greyc.ensicaen.fr
authors.forename: Olivier
authors.initials: O
authors.lastname: Mareschal
authors.forename: Sébastien
authors.initials: S
authors.lastname: Loiseau
authors.forename: Aurélien
authors.initials: A
authors.lastname: Fougerat
authors.forename: Laurie
authors.initials: L
authors.lastname: Valbin
authors.forename: Gaëlle
authors.initials: G
authors.lastname: Lissorgues
authors.forename: Sebastien
authors.initials: S
authors.lastname: Saez
authors.forename: Christophe
authors.initials: C
authors.lastname: Dolabdjian
authors.forename: Rachid
authors.initials: R
authors.lastname: Bouregba
authors.forename: Gilles
authors.initials: G
authors.lastname: Poullain