Defect-mediated polarization switching in ferroelectrics and related materials: from mesoscopic mechanisms to atomistic control.
The plethora of lattice and electronic behaviors in ferroelectric and multiferroic materials and heterostructures opens vistas into novel physical phenomena including magnetoelectric coupling and ferroelectric tunneling. The development of new classes of electronic, energy-storage, and information-technology devices depends critically on understanding and controlling field-induced polarization switching. Polarization reversal is controlled by defects that determine activation energy, critical switching bias, and the selection between thermodynamically equivalent polarization states in multiaxial ferroelectrics. Understanding and controlling defect functionality in ferroelectric materials is as critical to the future of oxide electronics and solid-state electrochemistry as defects in semiconductors are for semiconductor electronics. Here, recent advances in understanding the defect-mediated switching mechanisms, enabled by recent advances in electron and scanning probe microscopy, are discussed. The synergy between local probes and structural methods offers a pathway to decipher deterministic polarization switching mechanisms on the level of a single atomically defined defect.
Kalinin
Sergei V
SV
Oak Ridge National Laboratory Oak Ridge, TN 37831, USA. sergei2@ornl.gov
Rodriguez
Brian J
BJ
Borisevich
Albina Y
AY
Baddorf
Arthur P
AP
Balke
Nina
N
Chang
Hye Jung
HJ
Chen
Long-Qing
LQ
Choudhury
Samrat
S
Jesse
Stephen
S
Maksymovych
Peter
P
Nikiforov
Maxim P
MP
Pennycook
Stephen J
SJ
D004581:Electronics; D008280:Magnetics; D008420:Manufactured Materials / Q000032:analysis*; D008854:Microscopy, Electron / Q000379:methods; D020527:Microscopy, Scanning Probe / Q000379:methods