title: Emissivity of microstructured silicon.
abstract: Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.
authors.affiliation: U.S. Army Communications-Electronics Research, Development, and Engineering Center, Research, Development and Engineering Command, Night Vision and Electronic Sensors Directorate, Science and Technology Division, 10221 Burbeck Road Fort Belvoir, Virginia 22060, USA. info@nvl.army.mil
authors.forename: Patrick G
authors.initials: PG
authors.lastname: Maloney
authors.forename: Peter
authors.initials: P
authors.lastname: Smith
authors.forename: Vernon
authors.initials: V
authors.lastname: King
authors.forename: Curtis
authors.initials: C
authors.lastname: Billman
authors.forename: Mark
authors.initials: M
authors.lastname: Winkler
authors.forename: Eric
authors.initials: E
authors.lastname: Mazur