Chemical vapor deposition synthesis of N-, P-, and Si-doped single-walled carbon nanotubes.
Here we report the synthesis of single-walled carbon nanotube bundles by chemical vapor deposition in the presence of electron donor elements (N, P, and Si). In order to introduce each dopant into the graphitic carbon lattice, different precursors containing the doping elements (benzylamine, pyrazine, triphenylphosphine, and methoxytrimethylsilane) were added at various concentrations into ethanol/ferrocene solutions. The synthesized nanotubes and byproduct were characterized by electron microscopy and Raman spectroscopy. Our results reveal intrinsic structural and electronic differences for the N-, P-, and Si- doped nanotubes. These tubes can now be tested for the fabrication of electronic nanodevices, and their performance can be observed.
Campos-Delgado
Jessica
J
Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a Seccion, 78216 San Luis Potosi, SLP, Mexico.
Maciel
Indhira O
IO
Cullen
David A
DA
Smith
David J
DJ
Jorio
Ado
A
Pimenta
Marcos A
MA
Terrones
Humberto
H
Terrones
Mauricio
M