Organic nonvolatile memory devices based on ferroelectricity.
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
Naber
Ronald C G
RC
ECN Solar Energy 1755 ZG Petten, The Netherlands. naber@ecn.nl
Asadi
Kamal
K
Blom
Paul W M
PW
de Leeuw
Dago M
DM
de Boer
Bert
B
D016248:Computer Storage Devices; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D008280:Magnetics / Q000295:instrumentation*; D009930:Organic Chemicals / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
D009930:Organic Chemicals