title: Current development and patents on high-brightness white LED for illumination.
abstract: In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
authors.affiliation: Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China.
authors.forename: Wen-Yuan
authors.initials: WY
authors.lastname: Pang
authors.forename: Ikai
authors.initials: I
authors.lastname: Lo
authors.forename: Chia-Ho
authors.initials: CH
authors.lastname: Hsieh
authors.forename: Yu-Chi
authors.initials: YC
authors.lastname: Hsu
authors.forename: Ming-Chi
authors.initials: MC
authors.lastname: Chou
authors.forename: Cheng-Hung
authors.initials: CH
authors.lastname: Shih
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D003246:Conservation of Energy Resources; D055615:Electrical Equipment and Supplies; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D018020:Lithium Compounds / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D009584:Nitrogen / Q000737:chemistry*; D010330:Patents as Topic; D014961:X-Ray Diffraction
chemical_list: D017607:Aluminum Compounds; D018020:Lithium Compounds; C405267:lithium aluminate; D005708:Gallium; D009584:Nitrogen