title: Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor.
abstract: Nickel oxide nanoplates were continuously synthesized by hydrothermal reaction using a flow-type reactor. The products had a thickness of approximately 10 nm and a lateral size of 100-500 nm. The nanoplates were purified and drop-cast on a bottom-gate substrate and used as the channel material in a field-effect transistor after annealing at 300 degrees C. The I(d)-V(d) profile showed that the NiO nanoplates worked as the p-type semiconductor. This result suggests that various electronic devices can be prepared using metal oxide nanomaterials, which exhibit various properties including magnetism, ferroelectronics and catalysis as well as stability and safety in air and water.
authors.affiliation: Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan. stakami@tagen.tohoku.ac.jp
authors.forename: Seiichi
authors.initials: S
authors.lastname: Takami
authors.forename: Ryoma
authors.initials: R
authors.lastname: Hayakawa
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Wakayama
authors.forename: Toyohiro
authors.initials: T
authors.lastname: Chikyow