title: Characteristics of P-I-N laser detectors: their dependence on wavelength and temperature.
abstract: Wavelength and temperature-dependent characteristics of silicon P-I-N laser detectors are studied using the modified Baraff theory. Both the electron or hole injection effect and photogeneration effect are considered in the calculation of the power spectral density of multiplication noise and efficiencies. The results thus obtained are compared with previous papers where the photogeneration effect was neglected.
authors.forename: Y K
authors.initials: YK
authors.lastname: Su
authors.forename: C Y
authors.initials: CY
authors.lastname: Chang
authors.forename: T S
authors.initials: TS
authors.lastname: Wu
authors.forename: B D
authors.initials: BD
authors.lastname: Liu
authors.forename: Y K
authors.initials: YK
authors.lastname: Fang