Doped graphene as tunable electron-phonon coupling material.
We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
Attaccalite
Claudio
C
ETSF Scientific Development Centre, Departamento Fisica de Materiales, Universidad del Pais Vasco, San Sebastian, Spain. claudio.attaccalite@grenoble.cnrs.fr
Wirtz
Ludger
L
Lazzeri
Michele
M
Mauri
Francesco
F
Rubio
Angel
A
D004583:Electrons; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D014732:Vibration
D006108:Graphite