title: Crystal phase quantum dots.
abstract: In semiconducting nanowires, both zinc blende and wurtzite crystal structures can coexist. The band structure difference between the two structures can lead to charge confinement. Here we fabricate and study single quantum dot devices defined solely by crystal phase in a chemically homogeneous nanowire and observe single photon generation. More generally, our results show that this type of carrier confinement represents a novel degree of freedom in device design at the nanoscale.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. n.akopian@tudelft.nl
authors.forename: N
authors.initials: N
authors.lastname: Akopian
authors.forename: G
authors.initials: G
authors.lastname: Patriarche
authors.forename: L
authors.initials: L
authors.lastname: Liu
authors.forename: J-C
authors.initials: JC
authors.lastname: Harmand
authors.forename: V
authors.initials: V
authors.lastname: Zwiller
mesh_terms: D007204:Indium / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation; D053770:Nanowires / Q000737:chemistry*; D010720:Phosphines / Q000138:chemical synthesis / Q000737:chemistry*; D045663:Quantum Dots; D012666:Semiconductors
chemical_list: D010720:Phosphines; D007204:Indium; C090882:indium phosphide