title: ITEP MEVVA ion beam for rhenium silicide production.
abstract: The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.
authors.affiliation: Institute for Theoretical and Experimental Physics, Moscow 117218, Russia. kulevoy@itep.ru
authors.forename: T
authors.initials: T
authors.lastname: Kulevoy
authors.forename: N
authors.initials: N
authors.lastname: Gerasimenko
authors.forename: D
authors.initials: D
authors.lastname: Seleznev
authors.forename: G
authors.initials: G
authors.lastname: Kropachev
authors.forename: A
authors.initials: A
authors.lastname: Kozlov
authors.forename: R
authors.initials: R
authors.lastname: Kuibeda
authors.forename: P
authors.initials: P
authors.lastname: Yakushin
authors.forename: S
authors.initials: S
authors.lastname: Petrenko
authors.forename: N
authors.initials: N
authors.lastname: Medetov
authors.forename: O
authors.initials: O
authors.lastname: Zaporozhan