title: Organic nonvolatile memory devices based on ferroelectricity.
abstract: A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
authors.affiliation: ECN Solar Energy 1755 ZG Petten, The Netherlands. naber@ecn.nl
authors.forename: Ronald C G
authors.initials: RC
authors.lastname: Naber
authors.forename: Kamal
authors.initials: K
authors.lastname: Asadi
authors.forename: Paul W M
authors.initials: PW
authors.lastname: Blom
authors.forename: Dago M
authors.initials: DM
authors.lastname: de Leeuw
authors.forename: Bert
authors.initials: B
authors.lastname: de Boer
mesh_terms: D016248:Computer Storage Devices; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D008280:Magnetics / Q000295:instrumentation*; D009930:Organic Chemicals / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*
chemical_list: D009930:Organic Chemicals