Current development and patents on high-brightness white LED for illumination.
In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.
Pang
Wen-Yuan
WY
Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China.
Lo
Ikai
I
Hsieh
Chia-Ho
CH
Hsu
Yu-Chi
YC
Chou
Ming-Chi
MC
Shih
Cheng-Hung
CH
D017607:Aluminum Compounds / Q000737:chemistry*; D003246:Conservation of Energy Resources; D055615:Electrical Equipment and Supplies; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D018020:Lithium Compounds / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D009584:Nitrogen / Q000737:chemistry*; D010330:Patents as Topic; D014961:X-Ray Diffraction
D017607:Aluminum Compounds; D018020:Lithium Compounds; C405267:lithium aluminate; D005708:Gallium; D009584:Nitrogen