title: Gallium arsenide electroabsorption avalanche photodiode waveguide detectors.
abstract: Gallium arsenide electroabsorption avalanche photodiode (EAP) detectors have been fabricated in n - n(+) GaAs waveguides. Since these EAP detectors respond to wavelengths beyond the normal absorption edge of GaAs, due to the Franz-Keldysh effect, they have been used to detect the below band gap radiation from GaAs lasers and the 1.06-mum radiation from Nd:YAG lasers. The measured absorption and responsivity at these wavelengths suggest a number of applications. These EAP devices have been used to detect analog signals with a distortion less than 6%. Methods for utilizing them in time- and frequency-demultiplexing applications are also described.
authors.forename: M J
authors.initials: MJ
authors.lastname: Sun
authors.forename: K H
authors.initials: KH
authors.lastname: Nichols
authors.forename: W S
authors.initials: WS
authors.lastname: Chang
authors.forename: R O
authors.initials: RO
authors.lastname: Gregory
authors.forename: F J
authors.initials: FJ
authors.lastname: Rosenbaum
authors.forename: C M
authors.initials: CM
authors.lastname: Wolfe