Electro-optical effects in strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential.
We design and experimentally report strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential. At a lower applied electric field (F=50 kV/cm), the calculated blueshift of the lowest excitonic peak is 40.6 meV. In the room-temperature photocurrent experiments, a maximum upward shift of the apparent peak position of more than 35 meV is observed with an external reverse bias of -4 V. Furthermore, a lower absorption loss (alpha=9.8 cm(-1)) and a large negative refractive index change (Deltan=-0.0095) are obtained at 1.55 mum. This indicates that the strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential have a great potential for application to reflection type electro-optical switches.
Xu
Zhixin
Z
College of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China. xuzhixin19721005@yahoo.com.cn
Wang
Changrong
C
Qi
Wei
W
Yuan
Zhefeng
Z