Sulfur-assisted synthesis of nitride nanocrystals.
A series of nitrides (TiN, ZrN, BN, AlN) were prepared by using the corresponding elements (Ti, Zr, B, Al), NaN(3) and sulfur as starting materials in a stainless steel autoclave at 250 degrees C. Sulfur was used to facilitate the exothermic reaction between NaN(3) and sulfur (at 250 degrees C) and the final formation of nitrides. The treatment temperature affected the growth of the nitride crystals, for example, diversified morphologies of TiN nanocrystals were formed in different temperature ranges: grain and truncated octahedron (250 degrees C), octahedron (>300 degrees C), and dendrite (>400 degrees C). Through similar processes, other nitrides (for example, TiN, AlN, Si(3)N(4)) could also be produced by employing NaNH(2) and additives (such as iodine or N-aminothiourea instead of sulfur) in low temperatures.
Yang
Lishan
L
Key Laboratory of Colloid and Interface Chemistry (Shandong University), Ministry of Education, and School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, PR China.
Yu
Hongxiao
H
Xu
Liqiang
L
Ma
Qiang
Q
Qian
Yitai
Y