title: Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si.
authors.affiliation: Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
authors.forename: Chongqi
authors.initials: C
authors.lastname: Yu
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
mesh_terms: D017097:Electric Impedance; D004563:Electrochemistry / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D010777:Photochemistry / Q000295:instrumentation*; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry* / Q000528:radiation effects; D014025:Titanium / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D012822:Silicon Dioxide; D014025:Titanium