title: Focused ion beam-assisted manipulation of single and double beta-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-omega method.
abstract: Control of one-dimensional (1D) nanostructures is demonstrated in this paper by selectively placing and aligning silicon carbide (beta-SiC) nanowires (NWs). We developed a reliable and highly reproducible way of placing a single or double SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator. 3-omega signals obtained by the four-point-probe method were used in measuring the thermal conductivity of the NWs. The thermal conductivities of the placed single and double beta-SiC NWs were obtained at 82 +/- 6 W mK( - 1) and 73 +/- 5 W mK( - 1), respectively. The proposed technique offers new possibilities for manipulating and evaluating 1D nanoscale materials.
authors.affiliation: Department of Physics, University of North Texas, Denton, TX 76203, USA.
authors.forename: K M
authors.initials: KM
authors.lastname: Lee
authors.forename: T Y
authors.initials: TY
authors.lastname: Choi
authors.forename: S K
authors.initials: SK
authors.lastname: Lee
authors.forename: D
authors.initials: D
authors.lastname: Poulikakos