Boron ion source based on planar magnetron discharge in self-sputtering mode.
An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature (400 degrees C), followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF(3), and could be useful for semiconductor industry application.
Gushenets
V I
VI
High Current Electronics Institute, Russian Academy of Sciences, Tomsk 634055, Russia.
Hershcovitch
A
A
Kulevoy
T V
TV
Oks
E M
EM
Savkin
K P
KP
Vizir
A V
AV
Yushkov
G Yu
GY