Emissivity of microstructured silicon.
Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.
Maloney
Patrick G
PG
U.S. Army Communications-Electronics Research, Development, and Engineering Center, Research, Development and Engineering Command, Night Vision and Electronic Sensors Directorate, Science and Technology Division, 10221 Burbeck Road Fort Belvoir, Virginia 22060, USA. info@nvl.army.mil
Smith
Peter
P
King
Vernon
V
Billman
Curtis
C
Winkler
Mark
M
Mazur
Eric
E