title: Large-scale assembly of highly flexible low-noise devices based on silicon nanowires.
abstract: Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible devices based on organic conductors or other nanowires. In addition, the gating behaviors and low-noise characteristics of our devices were maintained, even under highly bent conditions.
authors.affiliation: Interdisciplinary Program in Nano-Science and Technology, Seoul National University, Seoul, Korea.
authors.forename: Kwang
authors.initials: K
authors.lastname: Heo
authors.forename: Jee Woo
authors.initials: JW
authors.lastname: Park
authors.forename: Jee-Eun
authors.initials: JE
authors.lastname: Yang
authors.forename: Juntae
authors.initials: J
authors.lastname: Koh
authors.forename: Ji-Hwan
authors.initials: JH
authors.lastname: Kwon
authors.forename: Young Min
authors.initials: YM
authors.lastname: Jhon
authors.forename: Miyoung
authors.initials: M
authors.lastname: Kim
authors.forename: Moon-Ho
authors.initials: MH
authors.lastname: Jo
authors.forename: Seunghun
authors.initials: S
authors.lastname: Hong