Diameter-engineered SnO2 nanowires over contact-printed gold nanodots using size-controlled carbon nanopost array stamps.
A novel and effective methodology to control the diameters of semiconductor nanowires is reported through a versatile contact-printing method for obtaining size-controlled nanocatalysts by size-tunable carbon-based nanometer stamps. Vertically aligned carbon nanopost arrays, derived from nanoporous alumina templates, are used as the nanoscale stamps for printing of catalyst nanoparticles. The diameter of the carbon nanopost can be engineered by adjusting the pore dimension of the templates. Over the contact-printed Au nanodots in a uniform size distribution, semiconductor SnO2 nanowires are grown via a vapor-liquid-solid growth mechanism. Consequently, a direct dimension correspondence is achieved between the carbon nanopost stamp, the printed Au catalyst, and the finally obtained SnO2 nanowires. A model example of the diameter-dependent electrical properties of the semiconductor nanowires is successfully demonstrated in this work by applying three diameter-controlled SnO2 nanowires to nanowire field effect transistors.
Department of Materials Science and Engineering, Program for Integrated Molecular System (PIMS), Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea.
Sang Ho
SH
Lee
Gunho
G
Jo
Woojin
W
Park
Seungkyo
S
Lee
Youn-Su
YS
Kim
Beong Ki
BK
Cho
Takhee
T
Lee
Won
W
Bae Kim