Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges.
Moriyama
N
N
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
Ohno
Y
Y
Kitamura
T
T
Kishimoto
S
S
Mizutani
T
T