title: Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage.
abstract: In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2 films with a low dosage (< or =1 x 10(16)/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2 films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, PR China.
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: T P
authors.initials: TP
authors.lastname: Chen
authors.forename: S F
authors.initials: SF
authors.lastname: Yu
authors.forename: Z X
authors.initials: ZX
authors.lastname: Li
authors.forename: L
authors.initials: L
authors.lastname: Ding
authors.forename: M
authors.initials: M
authors.lastname: Yang
authors.forename: J I
authors.initials: JI
authors.lastname: Wong
authors.forename: C Y
authors.initials: CY
authors.lastname: Ng
authors.forename: C
authors.initials: C
authors.lastname: Yuen