title: Quantum interference control of femtosecond, microA current bursts in single GaAs nanowires.
abstract: A phase-stable superposition of femtosecond pulses from a compact erbium-doped fiber source and their second harmonic is shown to induce ultrashort approximately microA current bursts in single unbiased GaAs nanowires. Current injection relies on a quantum interference of one- and two-photon absorption pathways. The vector direction of the current is solely dictated by the polarization and relative phase of the harmonically related light components while its power dependence is consistent with a third order optical nonlinearity.
authors.affiliation: Physik-Department E11, Technische Universität München, Garching, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Ruppert
authors.forename: S
authors.initials: S
authors.lastname: Thunich
authors.forename: G
authors.initials: G
authors.lastname: Abstreiter
authors.forename: A
authors.initials: A
authors.lastname: Fontcuberta i Morral
authors.forename: A W
authors.initials: AW
authors.lastname: Holleitner
authors.forename: M
authors.initials: M
authors.lastname: Betz
mesh_terms: D001152:Arsenicals / Q000737:chemistry* / Q000528:radiation effects; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry* / Q000528:radiation effects; D008027:Light; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D011789:Quantum Theory; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium