title: Nanolithography of single-layer graphene oxide films by atomic force microscopy.
abstract: Atomic force microscopy-based nanolithography is used to generate the single-layer graphene oxide (GO) patterns on Si/SiO(2) substrates. In this process, a Si tip is used to scratch GO films, resulting in GO-free trenches. Using this method, various single-layer GO patterns such as gaps, ribbons, squares, triangles, and zigzags can be easily fabricated. By using the GO patterns as templates, the hybrid GO-Ag nanoparticle patterns were obtained. Our study provides a flexible, simple, convenient method for generating GO patterns on solid substrates, which could be useful for graphene material-based device applications.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Lu
authors.forename: Xiaozhu
authors.initials: X
authors.lastname: Zhou
authors.forename: Hai
authors.initials: H
authors.lastname: Li
authors.forename: Zongyou
authors.initials: Z
authors.lastname: Yin
authors.forename: Bing
authors.initials: B
authors.lastname: Li
authors.forename: Ling
authors.initials: L
authors.lastname: Huang
authors.forename: Freddy
authors.initials: F
authors.lastname: Boey
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
mesh_terms: D006108:Graphite / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D036103:Nanotechnology / Q000379:methods*; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties
chemical_list: D012822:Silicon Dioxide; D006108:Graphite; D012825:Silicon