title: Quaternary ZnCdSeTe nanowires.
abstract: We report the growth of needle-like high density quaternary ZnCdSeTe nanowires on oxidized Si(100) substrate using vapor-liquid-solid mechanism by molecular beam epitaxy with an Au-based nanocatalyst. It was found that average length and average diameter of the nanowires were 1.3 microm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanowires exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Energy depersive results indicate that composition ratio of our nanowire should be Zn0.87Cd0.13Se0.98Te0.02, which agrees excellently with the designated composition ratio of Zn0.87Cd0.13Se0.98Te0.02.
authors.affiliation: Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
authors.forename: C H
authors.initials: CH
authors.lastname: Hsiao
authors.forename: S J
authors.initials: SJ
authors.lastname: Chang
authors.forename: S B
authors.initials: SB
authors.lastname: Wang
authors.forename: S P
authors.initials: SP
authors.lastname: Chang
authors.forename: Y C
authors.initials: YC
authors.lastname: Cheng
authors.forename: T C
authors.initials: TC
authors.lastname: Li
authors.forename: W J
authors.initials: WJ
authors.lastname: Lin
authors.forename: B R
authors.initials: BR
authors.lastname: Huang