Direct chemical vapor deposition of graphene on dielectric surfaces.
Direct deposition of graphene on various dielectric substrates is demonstrated using a single-step chemical vapor deposition process. Single-layer graphene is formed through surface catalytic decomposition of hydrocarbon precursors on thin copper films predeposited on dielectric substrates. The copper films dewet and evaporate during or immediately after graphene growth, resulting in graphene deposition directly on the bare dielectric substrates. Scanning Raman mapping and spectroscopy, scanning electron microscopy, and atomic force microscopy confirm the presence of continuous graphene layers on tens of micrometer square metal-free areas. The revealed growth mechanism opens new opportunities for deposition of higher quality graphene films on dielectric materials.
Ismach
Ariel
A
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Druzgalski
Clara
C
Penwell
Samuel
S
Schwartzberg
Adam
A
Zheng
Maxwell
M
Javey
Ali
A
Bokor
Jeffrey
J
Zhang
Yuegang
Y
D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties
D005740:Gases; D046911:Macromolecular Substances