title: Surface induced asymmetry of acceptor wave functions.
abstract: Measurements of the local density of states of individual acceptors in III-V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III-V materials.
authors.affiliation: COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands.
authors.forename: C
authors.initials: C
authors.lastname: Celebi
authors.forename: J K
authors.initials: JK
authors.lastname: Garleff
authors.forename: A Yu
authors.initials: AY
authors.lastname: Silov
authors.forename: A M
authors.initials: AM
authors.lastname: Yakunin
authors.forename: P M
authors.initials: PM
authors.lastname: Koenraad
authors.forename: W
authors.initials: W
authors.lastname: Van Roy
authors.forename: J-M
authors.initials: JM
authors.lastname: Tang
authors.forename: M E
authors.initials: ME
authors.lastname: Flatté