title: A large quantity synthesis of ultra-thin ZnO nanobelts induced from stacking faults.
abstract: Thin ZnO nanobelts with average width of 7.5 nm have been synthesized using vapor phase transport method. It was found that stacking faults directed the growth of the thin nanobelts along the (0110) direction with {2110} top/bottom surfaces and {0001} side surfaces. The {0002} stacking fault with translation of 1/3(0110) extends throughout entire length of the ZnO nanobelts. The growth steps at the {0110} growth fronts resulted from the {0002} stacking fault are believed to direct fast axial growth of the thin ZnO nanobelts. The thin ZnO nanobelts are expected to be promising candidates for highly sensitive chemical and biological sensor applications.
authors.affiliation: Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148, USA.
authors.forename: Kai
authors.initials: K
authors.lastname: Wang
authors.forename: Jiajun
authors.initials: J
authors.lastname: Chen
authors.forename: Yuxi
authors.initials: Y
authors.lastname: Chen
authors.forename: Weilie
authors.initials: W
authors.lastname: Zhou