title: Inelastic electron tunneling spectroscopy study of thin gate dielectrics.
abstract: A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both the structural and electrical properties of the resulting device structures made from these materials. IETS can address issues related to reactions and intermixing at interfaces, as well as properties related to carrier mobility, such as phonon modes and charge traps, for structures that are difficult to characterize accurately by other techniques.
authors.affiliation: Yale University, New Haven, CT 06520-8284, USA.
authors.forename: James W
authors.initials: JW
authors.lastname: Reiner
authors.forename: Sharon
authors.initials: S
authors.lastname: Cui
authors.forename: Zuoguang
authors.initials: Z
authors.lastname: Liu
authors.forename: Miaomiao
authors.initials: M
authors.lastname: Wang
authors.forename: Charles H
authors.initials: CH
authors.lastname: Ahn
authors.forename: T P
authors.initials: TP
authors.lastname: Ma
mesh_terms: D006195:Hafnium / Q000737:chemistry; D010087:Oxides / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013057:Spectrum Analysis / Q000379:methods*; D014173:Transistors, Electronic
chemical_list: D010087:Oxides; C545179:hafnium oxide; D012822:Silicon Dioxide; D006195:Hafnium