title: Stability of embedded indium nanoclusters in silica under thermal treatment and ion irradiation.
abstract: The stability of embedded Indium (In) nanoclusters (NCs) in silica under thermal annealing and ion irradiation was investigated. The In NCs were prepared by implantation of 890 keV indium ions in silica matrix at room temperature. Post implantation annealing resulted in the shifting of the size distribution to higher side. On the other hand 140 keV Nitrogen ion irradiation at elevated temperature resulted in the reduction of NCs size, with significant narrowing of the size distribution. The paper discusses the results of the study in the light of the models pertaining to the stability of NCs under ion irradiation conditions.
authors.affiliation: Materials Science Centre, Department of Nuclear Physics, University of Madras, Chennai 600025, India.
authors.forename: P Santhana
authors.initials: PS
authors.lastname: Raman
authors.forename: K G M
authors.initials: KG
authors.lastname: Nair
authors.forename: Jay
authors.initials: J
authors.lastname: Ghatak
authors.forename: Umananda M
authors.initials: UM
authors.lastname: Bhatta
authors.forename: P V
authors.initials: PV
authors.lastname: Satyam
authors.forename: S
authors.initials: S
authors.lastname: Kalavathi
authors.forename: B K
authors.initials: BK
authors.lastname: Panigrahi
authors.forename: V
authors.initials: V
authors.lastname: Ravichandran