Photoinduced organic field-effect transistor based on poly-3-hexyl-thiophene active layer.
Top-contact organic field-effect transistors (OFETs) were fabricated by using a poly-3-hexyl-thiophene (P3HT) active layer. The characteristics of OFETs without and with the light-illumination were investigated. The experimental results indicate that the light has a great influence on the OFETs properties. After the light-illumination, the drain current and carrier mobility were increased, the threshold was decreased, and the on/off ratio was enhanced.
Jing
Na
N
Key Laboratory of Display Materials and Photoelectric Devices, Tianjin University of Technology, Ministry of Education, Institute of Material Physics, Tianjin 300384, China.
Deng
Jiachun
J
Yang
Liying
L
Zhao
Kai
K
Wang
Zhongqiang
Z
Cheng
Xiaoman
X
Hua
Yulin
Y
Yin
Shougen
S