title: Theory of the spin relaxation of conduction electrons in silicon.
abstract: A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T(-3) temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
authors.forename: J L
authors.initials: JL
authors.lastname: Cheng
authors.forename: M W
authors.initials: MW
authors.lastname: Wu
authors.forename: J
authors.initials: J
authors.lastname: Fabian