Modeling growth of one-dimensional islands: influence of reactive defects.
Influence of reactive defects on size distribution of one-dimensional islands is studied by means of kinetic Monte Carlo simulations in combination with an analytical approach. Two different models are examined: a model with anisotropically diffusing atoms irreversibly aggregating to islands, and a reversible model close to thermal equilibrium which allows atom detachment from islands during the growth. The models can be used to simulate island growth of group III metals deposited on the Si(100)2 x 1 surface at room temperature: Al, Ga (irreversible model), and In (equilibrium model). We demonstrate that concentration of the reactive defects 0.0025 per site may change the island size distribution from monomodal to monotonically decreasing in the case of the irreversible model. At concentration >or=0.005 defects per site, a difference between results of the studied models is suppressed by the influence of the defects and similar island size distributions are obtained.
Kocán
Pavel
P
Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holesovickách 2, 180 00 Prague 8, Czech Republic. pavel.kocan@mff.cuni.cz
Sobotík
Pavel
P
Ost'ádal
Ivan
I
Setvín
Martin
M
Haviar
Stanislav
S
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000138:chemical synthesis*; D008956:Models, Chemical
D046911:Macromolecular Substances