title: Effect of surface passivation on dielectrophoresis-prepared multi-channel ZnO nanowire field effect transistor (FETs).
abstract: We report on the effect of surface passivation on the electrical characteristics of multi-channel ZnO nanowire field-effect transistors (FETs). Surface passivation was performed using a SiO2 layer on ZnO nanowires. Multi-channel FETs were prepared by assembling as synthesized ZnO nanowires on a SiO2/Si substrate using an alternating current (AC) dielectrophoresis (DEP) technique. We observed that surface passivation with a SiO2 layer on ZnO nanowires was significantly affected by electrical characteristics of multi-channel ZnO nanowire FETs such as the threshold voltage and transconductance.
authors.affiliation: Department of Semiconductor Science and Technology, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea.
authors.forename: Jung-Hwan
authors.initials: JH
authors.lastname: Hyung
authors.forename: Dong-Joo
authors.initials: DJ
authors.lastname: Kim
authors.forename: Seung-Yong
authors.initials: SY
authors.lastname: Lee
authors.forename: Sang-Kwon
authors.initials: SK
authors.lastname: Lee