Ge diffusion at the Si(100) surface.
Using scanning tunneling microscopy movies, we directly observe individual embedded Ge atoms to be mobile within the Si(100)-(2x1)-Ge surface at temperatures as low as 90 degrees C. We demonstrate that Ge atoms move by exchange diffusion with (1) adsorbed monomers and (2) individual constituent atoms of adsorbed dimers. Our observations are consistent with recent density-functional theory calculations, which give the atomistic pathways and energetic barriers for both exchange mechanisms. We find that neither adsorbed monomers nor dimers can diffuse more than a few nanometers between exchange events, illustrating how Ge diffusion and intermixing are intimately coupled at the nanoscale on the Si(100) surface.
Bussmann
E
E
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
Swartzentruber
B S
BS