Synthesis and in-situ TEM transport measurements of individual GaN nanowires and nanotubes.
High-purity GaN nanowires and nanotubes of various morphologies and sizes have been synthesized through epitaxial growth on [001]-oriented sapphire substrates. The GaN nanowires grown on Ni catalyst particles possess an average diameter of approximately 100 nm and rather smooth surface; whereas GaN nanotubes guided by Au particles exhibit large diameters (100-500 nm) and rough surface morphology. The microstructures and crystallography of GaN nanowires and nanotubes were analyzed using a high-resolution transmission electron microscope (HRTEM). For the first time the electrical transport in individual GaN nanowires and nanotubes was in-situ measured inside the microscope. The electrical transport was mainly affected by the nanocrystal quality and nanostructure/contact interfaces.
Liu
Baodan
B
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Bando
Yoshio
Y
Wang
Mingsheng
M
Golberg
Dmitri
D