Organosilyl/-germyl polyoxotungstate hybrids for covalent grafting onto silicon surfaces: towards molecular memories.
Organosilyl/-germyl polyoxotungstate hybrids [PW(9)O(34)(tBuSiO)(3)Ge(CH(2))(2)CO(2)H](3-) (1a), [PW(9)O(34)(tBuSiO)(3)Ge(CH(2))(2)CONHCH(2)C[triple bond]CH](3-) (2 a), [PW(11)O(39)Ge(CH(2))(2)CO(2)H](4-) (3a), and [PW(11)O(39)Ge(CH(2))(2)CONHCH(2)C[triple bond]CH](4-) (4a) have been prepared as tetrabutylammonium salts and characterized in solution by multinuclear NMR spectroscopy. The crystal structure of (NBu(4))(3)1a.H(2)O has been determined and the electrochemical behavior of 1a and 2a has been investigated by cyclic voltammetry. Covalent grafting of 2a onto an n-type silicon wafer has been achieved and the electrochemical behavior of the grafted clusters has been investigated. This represents the first example of covalent grafting of Keggin-type clusters onto a Si surface and a step towards the realization of POM-based multilevel memory devices.
Joo
Nicoleta
N
CEA-LETI-DTBS Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
Renaudineau
Séverine
S
Delapierre
Guillaume
G
Bidan
Gérard
G
Chamoreau
Lise-Marie
LM
Thouvenot
René
R
Gouzerh
Pierre
P
Proust
Anna
A