Prediction of TiO2 thin film growth on the glass beads in a rotating plasma chemical vapor deposition reactor.
We calculated the concentration profiles of important chemical species for TiO2 thin film growth on the glass beads in the TTIP + O2 plasmas and compared the predicted growth rates of thin films with the experimental measurements. The film thickness profile depends on the concentration profile of TiO(OC3H7)3 precursors in the gas phase because TiO(OC3H7)3 is the main precursor of the thin film. The TTIP concentration decreases with time, while the TiO(OC3H7)3 concentration increases, and they reach the steady state about 2 approximately 3 sec. The growth rate of TiO2 film predicted in this study was 9.2 nm/min and is in good agreements with the experimental result of 10.5 nm/min under the same process conditions. This study suggests that a uniform TiO2 thin film on particles can be obtained by using a rotating cylindrical PCVD reactor.
Kim
Dong-Joo
DJ
Department of Chemical Engineering, Kangwon National University, Chuncheon, Kangwon-do 200-701, Korea.
Kim
Kyo-Seon
KS
D003198:Computer Simulation; D003460:Crystallization / Q000379:methods; D005740:Gases / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008956:Models, Chemical; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods; D010316:Particle Size; D012399:Rotation; D013499:Surface Properties; D014025:Titanium / Q000737:chemistry*; D014835:Volatilization
D005740:Gases; D046911:Macromolecular Substances; D008567:Membranes, Artificial; C009495:titanium dioxide; D014025:Titanium