Size effect of nano scale phase change random access memory.
In this paper, we have investigated the size effect of nano scale PRAM using three-dimensional finite element analysis tool. The reset current and temperature profile of PRAM cells with top and bottom electrode contact hole size were calculated by the numerical method. And temperature profile of PRAM unit cell with size and thickness of GST thin film was simulated. As top electrode contact size was smaller, reset current decreased. But these variations couldn't affect to operate memory. On the other hand, as bottom electrode contact size was smaller, reset current abruptly decreased.
Son
Ji Hoon
JH
Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.
Choi
HongKyw
H
Jang
Nakwon
N
Kim
Hong Seung
HS
Yi
Dong Young
DY
Lee
Seong Hwan
SH