title: Size effect of nano scale phase change random access memory.
abstract: In this paper, we have investigated the size effect of nano scale PRAM using three-dimensional finite element analysis tool. The reset current and temperature profile of PRAM cells with top and bottom electrode contact hole size were calculated by the numerical method. And temperature profile of PRAM unit cell with size and thickness of GST thin film was simulated. As top electrode contact size was smaller, reset current decreased. But these variations couldn't affect to operate memory. On the other hand, as bottom electrode contact size was smaller, reset current abruptly decreased.
authors.affiliation: Division of Electrical and Electronics Engineering, Korea Maritime University, Busan 606-791, Korea.
authors.forename: Ji Hoon
authors.initials: JH
authors.lastname: Son
authors.forename: HongKyw
authors.initials: H
authors.lastname: Choi
authors.forename: Nakwon
authors.initials: N
authors.lastname: Jang
authors.forename: Hong Seung
authors.initials: HS
authors.lastname: Kim
authors.forename: Dong Young
authors.initials: DY
authors.lastname: Yi
authors.forename: Seong Hwan
authors.initials: SH
authors.lastname: Lee