title: Charge noise in graphene transistors.
abstract: We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge's empirical relation fails to describe the data. At low carrier density, the noise can be attributed to fluctuating charges in close proximity to the graphene, while at high carrier density it is consistent with noise due to scattering in the channel. The charge noise power scales inversely with the device area, and bilayer devices exhibit lower noise than single-layer devices. In air, the observed noise is also consistent with the charge-noise model.
authors.affiliation: Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, The Netherlands.
authors.forename: Iddo
authors.initials: I
authors.lastname: Heller
authors.forename: Sohail
authors.initials: S
authors.lastname: Chatoor
authors.forename: Jaan
authors.initials: J
authors.lastname: Männik
authors.forename: Marcel A G
authors.initials: MA
authors.lastname: Zevenbergen
authors.forename: Jeroen B
authors.initials: JB
authors.lastname: Oostinga
authors.forename: Alberto F
authors.initials: AF
authors.lastname: Morpurgo
authors.forename: Cees
authors.initials: C
authors.lastname: Dekker
authors.forename: Serge G
authors.initials: SG
authors.lastname: Lemay
mesh_terms: D003198:Computer Simulation; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008962:Models, Theoretical; D036103:Nanotechnology / Q000295:instrumentation*; D014173:Transistors, Electronic
chemical_list: D006108:Graphite