title: Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.
abstract: Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs.
authors.affiliation: Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8603, Japan.
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Nakashima
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Ohno
authors.forename: Shigeru
authors.initials: S
authors.lastname: Kishimoto
authors.forename: Mina
authors.initials: M
authors.lastname: Okochi
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Honda
authors.forename: Takashi
authors.initials: T
authors.lastname: Mizutani
mesh_terms: D015374:Biosensing Techniques / Q000295:instrumentation*; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D037742:Nanotubes, Carbon