Doped nanostructured zinc oxide films grown by electrodeposition.
ZnO thin films doped with either In or Al are n-type oxide materials of interest for application in electronic devices and thin-film solar cells. In this work, the doped ZnO films were electrodeposited at 80 degrees C from an aqueous solution on polycrystalline conductive Indium Tin Oxide covered glass substrates. The incorporation of the dopants into the ZnO film has been verified by energy dispersive X-ray spectrum, X-Ray diffraction and optical transmission analysis. The optical and surface structure properties of the ZnO doped films are strongly affected by the In and Al concentrations in the electrodeposition solution as evidenced by optical transmission and reflection measurements, and scanning electron microscopy.
Donderis
V
V
Departamento de Ingeniería Eléctrica, Universidad Politécnica de Valencia, Camí Vera s/n, 46071-Valencia, Spain.
Orozco
J
J
Cembrero
J
J
Curiel-Esparza
J
J
Damonte
L C
LC
Hernández-Fenollosa
M A
MA