Theory of the spin relaxation of conduction electrons in silicon.
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T(-3) temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.
Cheng
J L
JL
Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Wu
M W
MW
Fabian
J
J