Fast growth synthesis of GaAs nanowires with exceptional length.
We report the first synthesis of GaAs nanowires (NWs) by Au-assisted vapor-liquid-solid (VLS) growth in the novel hydride vapor phase epitaxy (HVPE) environment. Forty micrometer long rodlike <111> monocrystalline GaAs nanowires exhibiting a cubic zinc blende structure were grown in 15 min with a mean density of 10(6) cm(-2). The synthesis of such long figures in such a short duration could be explained by the growth physics of near-equilibrium HVPE. VLS-HVPE is mainly based on solidification after direct and continuous feeding of the arsenious and GaCl growth precursors through the Au-Ga liquid catalyst. Fast solidification (170 microm/h) is then assisted by the high decomposition frequency of GaCl. This predominant feeding through the liquid-solid interface with no mass and kinetic hindrance favors axial rather than radial growth, leading to twin-free nanowires with a constant cylinder shape over unusual length. The achievement of GaAs NWs several tens of micrometers long showing a high surface to volume ratio may open the field of III-V wires, as already addressed with ultralong Si nanowires.
Ramdani
M R
MR
Clermont Université, Université Blaise Pascal, LASMEA, BP 10448, Clermont-Ferrand, France.
Gil
E
E
Leroux
Ch
Ch
André
Y
Y
Trassoudaine
A
A
Castelluci
D
D
Bideux
L
L
Monier
G
G
Robert-Goumet
C
C
Kupka
R
R
D001152:Arsenicals / Q000138:chemical synthesis*; D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D013499:Surface Properties
D001152:Arsenicals; D046911:Macromolecular Substances; C043055:gallium arsenide; D005708:Gallium