title: Interstitial-mediated diffusion in germanium under proton irradiation.
abstract: We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.
authors.affiliation: Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany. bracht@uni-muenster.de
authors.forename: H
authors.initials: H
authors.lastname: Bracht
authors.forename: S
authors.initials: S
authors.lastname: Schneider
authors.forename: J N
authors.initials: JN
authors.lastname: Klug
authors.forename: C Y
authors.initials: CY
authors.lastname: Liao
authors.forename: J
authors.initials: J
authors.lastname: Lundsgaard Hansen
authors.forename: E E
authors.initials: EE
authors.lastname: Haller
authors.forename: A
authors.initials: A
authors.lastname: Nylandsted Larsen
authors.forename: D
authors.initials: D
authors.lastname: Bougeard
authors.forename: M
authors.initials: M
authors.lastname: Posselt
authors.forename: C
authors.initials: C
authors.lastname: Wündisch