Hybrid vertical architecture transistor with 2,6-diphenylindenofluorene based emitter and base permeability controlled by polystyrene spheres lithography.
We report on vertical architecture hybrid transistor devices using p-type silicon as collector terminal and 2,6-diphenylindenofluorene as organic semiconductor in the emitter layer. Polystyrene spheres were used as shadow masks in order to control the diameter and density of the openings in the Al metallic base. Two processes of sphere deposition were used: electrospray and dip-coating. The electrospray deposition leads to a smaller density of sphere agglomerates, but for the used sphere diameter, approximately 200 nm, the transistor performance is similar for devices prepared with sphere deposition by both techniques. The so constructed permeable-base transistors show common-emitter current gain of the order of 10(2).
Rossi
Lucieli
L
Group of Organic Optoelectronic Devices, Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba PR, Brazil.
Serbena
José P M
JP
Meruvia
Michelle S
MS
Hummelgen
Ivo A
IA
Stori
Elis M
EM
Saul
Cyro K
CK
Wang
Zhi Yuan
ZY