title: Thienylsilane-modified indium tin oxide as an anodic interface in polymer/fullerene solar cells.
abstract: The generation and characterization of a robust thienylsilane molecular layer on indium tin oxide substrates was investigated. The molecular layer was found to reduce the oxidation potential required for the electrochemical polymerization of 3,4-ethylenedioxythiophene. The resulting electrochemically prepared poly(3,4-ethylenedioxythiophene):poly(p-styrenesulfonate) (ePEDOT:PSS) films were found to be more uniform in coverage with lower roughness and higher conductivity than analogous films fabricated with bare ITO. A relative improvement in the efficiency of 2,5-diyl-poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) bulk heterojunction solar cells was observed when devices were formed on thienylsilane-modified ITO electrodes, rather than unmodified ITO control electrodes.
authors.affiliation: Department of Chemistry, University of Alberta, Alberta, Canada.
authors.forename: David A
authors.initials: DA
authors.lastname: Rider
authors.forename: Ken D
authors.initials: KD
authors.lastname: Harris
authors.forename: Dong
authors.initials: D
authors.lastname: Wang
authors.forename: Jennifer
authors.initials: J
authors.lastname: Bruce
authors.forename: Michael D
authors.initials: MD
authors.lastname: Fleischauer
authors.forename: Ryan T
authors.initials: RT
authors.lastname: Tucker
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Brett
authors.forename: Jillian M
authors.initials: JM
authors.lastname: Buriak