title: Internal quantum efficiency modeling of silicon photodiodes.
abstract: Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01%. These results provide an important validation of the National Institute of Standards and Technology (NIST) spectral radiant power responsivity scale disseminated through the NIST Spectral Comparator Facility, as well as those scales disseminated by other National Metrology Institutes who have employed the same model.
authors.affiliation: Stop 8461, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. thomas.gentile@nist.gov
authors.forename: T R
authors.initials: TR
authors.lastname: Gentile
authors.forename: S W
authors.initials: SW
authors.lastname: Brown
authors.forename: K R
authors.initials: KR
authors.lastname: Lykke
authors.forename: P S
authors.initials: PS
authors.lastname: Shaw
authors.forename: J T
authors.initials: JT
authors.lastname: Woodward