Interstitial-mediated diffusion in germanium under proton irradiation.
We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.
Bracht
H
H
Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germany. bracht@uni-muenster.de
Schneider
S
S
Klug
J N
JN
Liao
C Y
CY
Lundsgaard Hansen
J
J
Haller
E E
EE
Nylandsted Larsen
A
A
Bougeard
D
D
Posselt
M
M
Wündisch
C
C