Inelastic electron tunneling spectroscopy study of thin gate dielectrics.
A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both the structural and electrical properties of the resulting device structures made from these materials. IETS can address issues related to reactions and intermixing at interfaces, as well as properties related to carrier mobility, such as phonon modes and charge traps, for structures that are difficult to characterize accurately by other techniques.
Reiner
James W
JW
Yale University, New Haven, CT 06520-8284, USA.
Cui
Sharon
S
Liu
Zuoguang
Z
Wang
Miaomiao
M
Ahn
Charles H
CH
Ma
T P
TP
D006195:Hafnium / Q000737:chemistry; D010087:Oxides / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013057:Spectrum Analysis / Q000379:methods*; D014173:Transistors, Electronic
D010087:Oxides; C545179:hafnium oxide; D012822:Silicon Dioxide; D006195:Hafnium