title: Photoinduced organic field-effect transistor based on poly-3-hexyl-thiophene active layer.
abstract: Top-contact organic field-effect transistors (OFETs) were fabricated by using a poly-3-hexyl-thiophene (P3HT) active layer. The characteristics of OFETs without and with the light-illumination were investigated. The experimental results indicate that the light has a great influence on the OFETs properties. After the light-illumination, the drain current and carrier mobility were increased, the threshold was decreased, and the on/off ratio was enhanced.
authors.affiliation: Key Laboratory of Display Materials and Photoelectric Devices, Tianjin University of Technology, Ministry of Education, Institute of Material Physics, Tianjin 300384, China.
authors.forename: Na
authors.initials: N
authors.lastname: Jing
authors.forename: Jiachun
authors.initials: J
authors.lastname: Deng
authors.forename: Liying
authors.initials: L
authors.lastname: Yang
authors.forename: Kai
authors.initials: K
authors.lastname: Zhao
authors.forename: Zhongqiang
authors.initials: Z
authors.lastname: Wang
authors.forename: Xiaoman
authors.initials: X
authors.lastname: Cheng
authors.forename: Yulin
authors.initials: Y
authors.lastname: Hua
authors.forename: Shougen
authors.initials: S
authors.lastname: Yin