Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.
Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs.
Nakashima
Yasuhiro
Y
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8603, Japan.
Ohno
Yutaka
Y
Kishimoto
Shigeru
S
Okochi
Mina
M
Honda
Hiroyuki
H
Mizutani
Takashi
T
D015374:Biosensing Techniques / Q000295:instrumentation*; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000379:methods; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon