title: Femtosecond laser-drilling-induced HgCdTe photodiodes.
abstract: Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be pn junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.
authors.affiliation: Physics Department, Shanghai University, Shanghai 200444, China. fxzha@shu.edu.cn
authors.forename: F-X
authors.initials: FX
authors.lastname: Zha
authors.forename: M S
authors.initials: MS
authors.lastname: Li
authors.forename: J
authors.initials: J
authors.lastname: Shao
authors.forename: W T
authors.initials: WT
authors.lastname: Yin
authors.forename: S M
authors.initials: SM
authors.lastname: Zhou
authors.forename: X
authors.initials: X
authors.lastname: Lu
authors.forename: Q T
authors.initials: QT
authors.lastname: Guo
authors.forename: Z H
authors.initials: ZH
authors.lastname: Ye
authors.forename: T X
authors.initials: TX
authors.lastname: Li
authors.forename: H L
authors.initials: HL
authors.lastname: Ma
authors.forename: B
authors.initials: B
authors.lastname: Zhang
authors.forename: X C
authors.initials: XC
authors.lastname: Shen