Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage.
In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2 films with a low dosage (< or =1 x 10(16)/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2 films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.
Liu
Y
Y
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, PR China.
Chen
T P
TP
Yu
S F
SF
Li
Z X
ZX
Ding
L
L
Yang
M
M
Wong
J I
JI
Ng
C Y
CY
Yuen
C
C