title: Nanowire photodetectors.
abstract: The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in single nanowire devices are also being actively studied and developed. In this article, the general nanowire photodetector concepts are reviewed, together with a detailed description of the physical phenomena occurring in nanowire photoconductors and phototransistors, with some examples from recent experimental results obtained in our groups. An outlook on future directions toward the use of semiconductor nanowire photoconductors as intrachip interconnects, single-photon detectors, and image sensors, is also given.
authors.affiliation: Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.
authors.forename: Cesare
authors.initials: C
authors.lastname: Soci
authors.forename: Arthur
authors.initials: A
authors.lastname: Zhang
authors.forename: Xin-Yu
authors.initials: XY
authors.lastname: Bao
authors.forename: Hongkwon
authors.initials: H
authors.lastname: Kim
authors.forename: Yuhwa
authors.initials: Y
authors.lastname: Lo
authors.forename: Deli
authors.initials: D
authors.lastname: Wang