Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.
Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.
Suk
Kyung-Suk
KS
Faculty of Applied Chemical Engineering, Center for Funtional Nano Fine Chemicals BK21 Program and Research Institute for Catalysis, Chonnam National University, 300 Yong Bong-Dong, Gwang-Ju 500-757, Korea.
Jung
Ha-Na
HN
Woo
Hee-Gweon
HG
Park
Don-Hee
DH
Kim
Do-Heyoung
DH