Electric-field-enhanced neutralization of deep centers in GaAs.
The charge dynamics of hydrogenlike centers in semi-insulating GaAs have been studied by muon spin resonance in the presence of electric field and RF excitation. Electric-field-enhanced neutralization of deep electron and hole traps by track-induced hot carriers results in an increase of the excess electron's or hole's lifetimes. Similar processes may take place in semiconductor devices working at high voltages and/or under irradiation. As a consequence of the deep traps neutralization, the muonium (mu{+} + e{-}) center can capture a hole.
Eshchenko
D G
DG
Physik-Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057, Zürich, Switzerland. dimitry.eshchenko@psi.ch
Storchak
V G
VG
Cottrell
S P
SP
Morenzoni
E
E