title: Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot.
abstract: We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T1, respectively.
authors.affiliation: Department of Physics and Astronomy, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, California 90095, USA. mingx@physics.ucla.edu
authors.forename: M
authors.initials: M
authors.lastname: Xiao
authors.forename: M G
authors.initials: MG
authors.lastname: House
authors.forename: H W
authors.initials: HW
authors.lastname: Jiang