title: In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
abstract: The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH(4) and CO(2), water was detected as one of the reaction byproduct in the TMA/O(3) process. In the TEMAH/O(3) process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H(2)O, CO(2), and HNEtMe during the metal precursor pulse.
authors.forename: Martin
authors.initials: M
authors.lastname: Rose
authors.forename: Jaakko
authors.initials: J
authors.lastname: Niinistö
authors.forename: Ingolf
authors.initials: I
authors.lastname: Endler
authors.forename: Johann W
authors.initials: JW
authors.lastname: Bartha
authors.forename: Peter
authors.initials: P
authors.lastname: Kücher
authors.forename: Mikko
authors.initials: M
authors.lastname: Ritala