Solution-prepared hybrid-nanoparticle dielectrics for high-performance low-voltage organic thin-film transistors.
Oleic acid capped barium strontium titanate (OA-BST) nanoparticles were synthesized for solution-prepared dielectrics in organic thin-film transistors (OTFTs). The as-synthesized nanoparticles were well-dispersed in organic solvents to deposit very homogeneous dielectric films by direct spin coating. Bottom-gate pentacene TFTs fabricated using these nanoparticle dielectric films showed high mobilities of 1-2 cm(2) V(-1) s(-1) with on/off ratios of 10(3) under a low driven voltage of -2.5 V. Top-gate poly(3,3'''-didodecylquaterthiophene) (PQT-12) TFTs with nanoparticle dielectrics also exhibited a low-voltage operation (-5 V) performance with mobilities of 0.01-0.1 cm(2) V(-1) s(-1) and on/off ratios of 10(3)-10(4). Detailed studies on the gate voltage-dependent mobility of the devices showed that only a low gate electric field needed to achieve the saturated mobility for the OA-BST-based pentacene OTFTs could be attributed to the low trapped-state densities (<3.9 x 10(11) cm(-2)) at the dielectric/semiconductor interfaces for these devices.
Gan
Ye
Y
School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, Singapore 637459, Singapore.
Cai
Qin Jia
QJ
Li
Chang Ming
CM
Yang
Hong Bin
HB
Lu
Zhi Song
ZS
Gong
Cheng
C
Chan-Park
Mary B
MB