Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot.
We demonstrate direct detection of individual electron spin states, together with measurement of spin relaxation time (T1), in silicon metal-oxide-semiconductor-based quantum dots (QD). Excited state spectroscopy of the QD has been performed using a charge-sensing technique. T1 of single spin excited states has been done in the time domain by a pump-and-probe method. For an odd and an even number of electrons, we found a magnetic field dependent and invariant T1, respectively.
Xiao
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Department of Physics and Astronomy, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, California 90095, USA. mingx@physics.ucla.edu
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Jiang
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