title: Doping of carbon nanotubes using low energy ion implantation.
abstract: Carbon nanotubes (CNTs) were implanted with thermally decomposed oxygen (O2+) and nitrogen (N2+) ions at an acceleration voltage of 20 V. With a low dose of oxygen ions, the CNT-FET exhibited p-type behaviors with substantial changes in threshold voltage and in the slope of the source-drain current (l(sd)). However, at high dosages, the device exhibited metallic behaviors. After nitrogen doping, we did not observe the effects of electron doping. Instead, nitrogen doping significantly increased l(sd) with no gating effect. Our theoretical results showed that the metallic behavior of nitrogen-doped CNTs arose from the impurity conduction band, which results from the overlapping wave function of the nitrogen impurity.
authors.affiliation: BK21 Physics Division, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
authors.forename: Jin Ho
authors.initials: JH
authors.lastname: Jang
authors.forename: Seong Chu
authors.initials: SC
authors.lastname: Lim
authors.forename: Dihn Loc
authors.initials: DL
authors.lastname: Duong
authors.forename: Gunn
authors.initials: G
authors.lastname: Kim
authors.forename: Woo Jong
authors.initials: WJ
authors.lastname: Yu
authors.forename: Kang Hee
authors.initials: KH
authors.lastname: Han
authors.forename: Yo-Sep
authors.initials: YS
authors.lastname: Min
authors.forename: Young Hee
authors.initials: YH
authors.lastname: Lee