title: GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
abstract: We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
authors.affiliation: Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp
authors.forename: Katsuhiro
authors.initials: K
authors.lastname: Tomioka
authors.forename: Junichi
authors.initials: J
authors.lastname: Motohisa
authors.forename: Shinjiroh
authors.initials: S
authors.lastname: Hara
authors.forename: Kenji
authors.initials: K
authors.lastname: Hiruma
authors.forename: Takashi
authors.initials: T
authors.lastname: Fukui
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum; D012825:Silicon