title: [Study on photoluminescence quenching of quantum well structure devices under reverse voltage].
abstract: Three organic devices with different quantum well period were fabricated. The potential barrier layer and well layer for electrons were made of N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1'-biphenyl 1-4,4'-diamine(NPB) and 4,4,N,N'-dicarbazolebiphenyl(CBP). The photoluminescence quenching of these three devices under changed reverse voltages were studied. Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors' devices. This is because that the effective electric field in NPB layer is higher than that in CBP layer. The excitons in NPB and CBP layer were easily to be dissociated when the quantum well period increased under the same reverse voltage. Since these three devices are type II quantum well structure, the excitons in these devices are not very stable.
authors.affiliation: Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China. zhn71@126.com
authors.forename: Hai-Na
authors.initials: HN
authors.lastname: Zhu
authors.forename: Zheng
authors.initials: Z
authors.lastname: Xu
authors.forename: Fu-Jun
authors.initials: FJ
authors.lastname: Zhang
authors.forename: Su-Ling
authors.initials: SL
authors.lastname: Zhao
authors.forename: Zhi-Bin
authors.initials: ZB
authors.lastname: Wang
authors.forename: Dan-Dan
authors.initials: DD
authors.lastname: Song
authors.forename: Yan-Fei
authors.initials: YF
authors.lastname: Zhang