Nanophotonic devices on thin buried oxide Silicon-On-Insulator substrates.
We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this technology. Propagation losses for the waveguides using the cutback method are 3.88 dB/cm for the quasi-TE mode and 5.06 dB/cm for the quasi-TM mode. Ring resonators with a loaded quality factor (Q) of 46,500 for the quasi-TM mode and intrinsic Q of 148,000 for the quasi-TE mode have been obtained. This process will enable the integration of photonic structures with thin buried oxide SOI based electronics.
Sridaran
Suresh
S
OxideMEMS Lab, School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14850, USA. ss625@cornell.edu
Bhave
Sunil A
SA
D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry*; D010783:Photometry / Q000295:instrumentation*; D017785:Photons; D012825:Silicon / Q000737:chemistry*
D010087:Oxides; D012825:Silicon