title: Study on the effect of heat-annealing and irradiation on spectroscopic properties of Bi:alpha-BaB2O4 single crystal.
abstract: The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4)(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi(+) ions. The minor difference of the energy-level diagrams of Bi(+) ions in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4) crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha-BaB(2)O(4) crystal were also investigated.
authors.affiliation: Key Laboratory of Transparent and Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050, China. xujun@mail.shcnc.ac.cn
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Hengyu
authors.initials: H
authors.lastname: Zhao
authors.forename: Liangbi
authors.initials: L
authors.lastname: Su
authors.forename: Jun
authors.initials: J
authors.lastname: Yu
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.forename: Huili
authors.initials: H
authors.lastname: Tang
authors.forename: Lihe
authors.initials: L
authors.lastname: Zheng
authors.forename: Hongjun
authors.initials: H
authors.lastname: Li
mesh_terms: D001729:Bismuth / Q000737:chemistry* / Q000528:radiation effects*; D006244:Hardness; D006358:Hot Temperature; D007259:Infrared Rays; D008027:Light; D012542:Scattering, Radiation
chemical_list: C033301:bismuth oxide; D001729:Bismuth