title: WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability.
abstract: A high performance monolithically integrated WDM receiver is fabricated on the SOI platform, with key components comprising a 1 x 32 Si-based AWG and an array of high speed waveguided Ge-on-Si photodetectors. The optical channel spacing is 200 GHz. This configuration was used to demonstrate 32-channel operation in the L-band, where it is particularly challenging for silicon photonics due to the low absorption coefficient of Ge at L-band wavelengths. Each channel is capable of operating at a data rate of at least 10 Gbps, resulting in an aggregate data rate of 320 Gbps. At a BER of 1 x 10(-11), the WDM receiver showed an optical input sensitivity between -16 dBm and -19 dBm.
authors.affiliation: Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685 Singapore. Fangq@ime.a-star.edu.sg
authors.forename: Qing
authors.initials: Q
authors.lastname: Fang
authors.forename: Tsung-Yang
authors.initials: TY
authors.lastname: Liow
authors.forename: Jun Feng
authors.initials: JF
authors.lastname: Song
authors.forename: Kah Wee
authors.initials: KW
authors.lastname: Ang
authors.forename: Ming Bin
authors.initials: MB
authors.lastname: Yu
authors.forename: Guo Qiang
authors.initials: GQ
authors.lastname: Lo
authors.forename: Dim-Lee
authors.initials: DL
authors.lastname: Kwong