title: Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.
abstract: An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore.
authors.forename: H K
authors.initials: HK
authors.lastname: Liang
authors.forename: S F
authors.initials: SF
authors.lastname: Yu
authors.forename: H Y
authors.initials: HY
authors.lastname: Yang
mesh_terms: D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: C473348:gallium nitride; D005708:Gallium; D015034:Zinc Oxide