CMOS-integrated high-speed MSM germanium waveguide photodetector.
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.
Assefa
Solomon
S
IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA. sassefa@us.ibm.com
Xia
Fengnian
F
Bedell
Stephen W
SW
Zhang
Ying
Y
Topuria
Teya
T
Rice
Philip M
PM
Vlasov
Yurii A
YA