title: Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps.
abstract: Novel OFET materials showing high mobility (0.77 cm2 V(-1) s(-1)) and good air-stability were developed using a benzobis(thiadiazole) (BBT) unit and the high FET performance was attributed to the low LUMO level and the film morphology.
authors.affiliation: Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
authors.forename: Takahiro
authors.initials: T
authors.lastname: Kono
authors.forename: Daisuke
authors.initials: D
authors.lastname: Kumaki
authors.forename: Jun-ichi
authors.initials: J
authors.lastname: Nishida
authors.forename: Shizuo
authors.initials: S
authors.lastname: Tokito
authors.forename: Yoshiro
authors.initials: Y
authors.lastname: Yamashita
mesh_terms: D003198:Computer Simulation; D018360:Crystallography, X-Ray; D008956:Models, Chemical; D008958:Models, Molecular; D015394:Molecular Structure; D010316:Particle Size; D011789:Quantum Theory; D012666:Semiconductors; D013830:Thiadiazoles / Q000737:chemistry*
chemical_list: D013830:Thiadiazoles; C551501:dithienylbenzobis(thiadiazole)