title: Liquid-phase epitaxial growth of bismuth silicon oxide single-crystal film: a new optically activated optical switch.
abstract: A single-crystalline double-layered structure of a pure (80-microm)/doped (39-microm)/pure Bi(12)SiO(20) (BSO) substrate was grown for the first time by a new liquid-phase epitaxial growth to form an optical waveguide. The waveguide layer is BSO doped with CaCO(3) (0.1 wt. %) and Ga(2)O(3) (0.197 wt. %) and has a refractive index 0.07% higher than the substrate. The optical absorption coefficients were decreased by more than 1 order of magnitude by doping with the elements Ca and Ga. The high-sensitive photoconductivity of pure BSO was also reduced. Using these unique properties, we have constructed a new type of optically controlled planar optical switch.
authors.forename: K
authors.initials: K
authors.lastname: Tada
authors.forename: Y
authors.initials: Y
authors.lastname: Kuhara
authors.forename: M
authors.initials: M
authors.lastname: Tatsumi
authors.forename: T
authors.initials: T
authors.lastname: Yamaguchi