title: A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.
abstract: This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.
authors.affiliation: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
authors.forename: Woo Young
authors.initials: WY
authors.lastname: Park
authors.forename: Gun Hwan
authors.initials: GH
authors.lastname: Kim
authors.forename: Jun Yeong
authors.initials: JY
authors.lastname: Seok
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.forename: Seul Ji
authors.initials: SJ
authors.lastname: Song
authors.forename: Min Hwan
authors.initials: MH
authors.lastname: Lee
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang