title: Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.
abstract: We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).
authors.affiliation: Department of nanomechanics, Tohoku University, Sendai 980-8579, Japan. wang@hane.mech.tohoku.ac.jp
authors.forename: Yongjin
authors.initials: Y
authors.lastname: Wang
authors.forename: Fangren
authors.initials: F
authors.lastname: Hu
authors.forename: Yoshiaki
authors.initials: Y
authors.lastname: Kanamori
authors.forename: Tong
authors.initials: T
authors.lastname: Wu
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Hane
mesh_terms: D003460:Crystallization / Q000379:methods*; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D012031:Refractometry; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; C473348:gallium nitride; D005708:Gallium