Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps.
Novel OFET materials showing high mobility (0.77 cm2 V(-1) s(-1)) and good air-stability were developed using a benzobis(thiadiazole) (BBT) unit and the high FET performance was attributed to the low LUMO level and the film morphology.
Kono
Takahiro
T
Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8502, Japan.
Kumaki
Daisuke
D
Nishida
Jun-ichi
J
Tokito
Shizuo
S
Yamashita
Yoshiro
Y
D003198:Computer Simulation; D018360:Crystallography, X-Ray; D008956:Models, Chemical; D008958:Models, Molecular; D015394:Molecular Structure; D010316:Particle Size; D011789:Quantum Theory; D012666:Semiconductors; D013830:Thiadiazoles / Q000737:chemistry*
D013830:Thiadiazoles; C551501:dithienylbenzobis(thiadiazole)