Elimination of interface recombination in oxide passivated silicon p+n photodiodes by storage of negative charge on the oxide surface.
The use of tin oxide, condensed water vapor, and water drop electrodes on the oxide surface as well as corona charging of the surface are compared in their ability to repel minority carriers from recombination sites at the oxide-silicon interface without compromising the optical properties of the photodiode. Corona charging provides significant advantages compared with the other three approaches.
Geist
J
J
CSIRO Division of Applied Physics, Sydney, 22070 Australia.
Farmer
A J
AJ
Martin
P J
PJ
Wilkinson
F J
FJ
Collocott
S J
SJ