Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology.
Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.
Liu
Po-Tsun
PT
Huang
Chen-Shuo
CS
Huang
Yi-Ling
YL
Lin
Jing-Ru
JR
Cheng
Szu-Lin
SL
Nishi
Yoshio
Y
Sze
S M
SM