title: Oxidized silicon-on-insulator (OxSOI) from bulk silicon: a new photonic platform.
abstract: We demonstrate a bulk silicon alternative to the conventional silicon-on-insulator photonics platform, using common CMOS process-based Si(3)N(4) masking and oxidation techniques. We show waveguide losses as low as 2.92 dB/cm with a technique that can be implemented on the front-end of a typical CMOS fabrication line.
authors.affiliation: School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA. nrs35@cornell.edu
authors.forename: Nicolás
authors.initials: N
authors.lastname: Sherwood-Droz
authors.forename: Alexander
authors.initials: A
authors.lastname: Gondarenko
authors.forename: Michal
authors.initials: M
authors.lastname: Lipson
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D010084:Oxidation-Reduction; D017785:Photons; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon