title: Strain-induced anisotropy measurement in oxide films grown on silicon.
abstract: A multiangle single-wavelength ellipsometric method has been applied to the evaluation of anisotropy and stress in SiO(2) films grown on silicon substrate. The method is nondestructive, and it does not require a priori knowledge of the dielectric functions of the oxide layer. A novel theoretical anisotropic multiple-layer program is used to calculate the Fresnel reflection coefficients at various angles of incidence; and an iterative least-squares algorithm compares the theoretical calculations to the experimental data. The data-fitting process yields the index, the thickness, and the anisotropy of the oxide layer and also the index and thickness of the SiO(x) transition layer.
authors.affiliation: Hughes Research Laboratories, Malibu, California 90265, USA.
authors.forename: M E
authors.initials: ME
authors.lastname: Pedinoff
authors.forename: D C
authors.initials: DC
authors.lastname: Mayer
authors.forename: O M
authors.initials: OM
authors.lastname: Stafsudd
authors.forename: G L
authors.initials: GL
authors.lastname: Dunn