Structural transition in indium phosphide nanowires.
We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask. It was found that uniform array of InP nanowires with hexagonal cross section and with negligible tapering were grown under two distinctive growth conditions. The nanowires grown in two different growth conditions were found to exhibit different crystal structures. It was also found that the orientation and size of hexagon were different, suggesting that the difference of the growth behavior. A model for the transition of crystal structure is presented based on the atomic arrangements and termination of InP surfaces. Photoluminescence measurement revealed that the transition took place for nanowires with diameters up to 1 microm.
Kitauchi
Yusuke
Y
Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sappoo, Japan.
Kobayashi
Yasunori
Y
Tomioka
Katsuhiro
K
Hara
Shinjiro
S
Hiruma
Kenji
K
Fukui
Takashi
T
Motohisa
Junichi
J
D003198:Computer Simulation; D007204:Indium / Q000737:chemistry*; D046911:Macromolecular Substances / Q000737:chemistry; D008956:Models, Chemical; D008958:Models, Molecular; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D044367:Phase Transition; D010720:Phosphines / Q000737:chemistry*; D013499:Surface Properties
D046911:Macromolecular Substances; D010720:Phosphines; D007204:Indium; C090882:indium phosphide