title: Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.
abstract: We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. lili0003@ntu.edu.sg
authors.forename: Liliana
authors.initials: L
authors.lastname: Tjahjana
authors.forename: Benzhong
authors.initials: B
authors.lastname: Wang
authors.forename: Hendrix
authors.initials: H
authors.lastname: Tanoto
authors.forename: Soo-Jin
authors.initials: SJ
authors.lastname: Chua
authors.forename: Soon Fatt
authors.initials: SF
authors.lastname: Yoon