Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering.
We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaAlAs/InP quantum-dash lasers when the injected photons are 33 +/- 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.
Chen
C
C
Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, USA. chc605@lehigh.edu
Ding
G
G
Ooi
B S
BS
Lester
L F
LF
Helmy
A
A
Koch
T L
TL
Hwang
J C M
JC
D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D045663:Quantum Dots; D013059:Spectrum Analysis, Raman / Q000295:instrumentation*; D013685:Telecommunications / Q000295:instrumentation*