title: Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.
abstract: Different capping of quantum dot (QD) materials is known to produce different degrees of intermixing during a post-growth thermal annealing process. We report a study of the effect of different degrees of intermixing on modulation beryllium doped quantum dot superluminescent light emitting diodes (QD-SLEDs). The intermixed QD-SLEDs show high device performance whilst achieving a large central emission wavelength shift of approximately 100nm compared to the as-grown device. The evolution of the emission spectra and power with drive current suggest a transition from QD-like to QW-like behavior with increasing degree of intermixing. A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized.
authors.affiliation: Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK. ziyang.zhang@shef.ac.uk
authors.forename: Z Y
authors.initials: ZY
authors.lastname: Zhang
authors.forename: Q
authors.initials: Q
authors.lastname: Jiang
authors.forename: M
authors.initials: M
authors.lastname: Hopkinson
authors.forename: R A
authors.initials: RA
authors.lastname: Hogg
mesh_terms: D000465:Algorithms; D001608:Beryllium / Q000737:chemistry; D004058:Diffusion; D004581:Electronics; D004867:Equipment Design; D008027:Light; D049449:Luminescence; D036103:Nanotechnology / Q000379:methods; D055095:Optics and Photonics; D045663:Quantum Dots; D013696:Temperature
chemical_list: D001608:Beryllium