title: Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology.
abstract: Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.
authors.forename: Po-Tsun
authors.initials: PT
authors.lastname: Liu
authors.forename: Chen-Shuo
authors.initials: CS
authors.lastname: Huang
authors.forename: Yi-Ling
authors.initials: YL
authors.lastname: Huang
authors.forename: Jing-Ru
authors.initials: JR
authors.lastname: Lin
authors.forename: Szu-Lin
authors.initials: SL
authors.lastname: Cheng
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nishi
authors.forename: S M
authors.initials: SM
authors.lastname: Sze