title: CMOS-integrated high-speed MSM germanium waveguide photodetector.
abstract: A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.
authors.affiliation: IBM TJ Watson Research Center, Yorktown Heights, NY 10536, USA. sassefa@us.ibm.com
authors.forename: Solomon
authors.initials: S
authors.lastname: Assefa
authors.forename: Fengnian
authors.initials: F
authors.lastname: Xia
authors.forename: Stephen W
authors.initials: SW
authors.lastname: Bedell
authors.forename: Ying
authors.initials: Y
authors.lastname: Zhang
authors.forename: Teya
authors.initials: T
authors.lastname: Topuria
authors.forename: Philip M
authors.initials: PM
authors.lastname: Rice
authors.forename: Yurii A
authors.initials: YA
authors.lastname: Vlasov