Pulsed gate sweep strategies for hysteresis reduction in carbon nanotube transistors for low concentration NO(2) gas detection.
Carbon-nanotube-based field effect transistors (CNFETs) have been employed as highly sensitive chemical sensors. Often used as the sensor output signal, the gate threshold voltage (V(th)) is subject to concentration-dependent shifts upon exposure to target analytes. However, an unambiguous determination of the intrinsic V(th) is usually hampered by substantial hysteresis in CNFET gate characteristics. In this study we show that short gate voltage (V(gd)) pulses can be used for hysteresis reduction in CNFETs as chemical sensors, in particular for NO(2) detection. In the pulsed operation regime, even small shifts of V(th) upon sub-ppm NO(2) exposure remain resolvable. Furthermore, the hysteretic behaviour is systematically investigated by varying the pulse waveforms and timing parameters. Finally, we use an adapted hysteresis model for pulsed V(gd) and employ it to discuss the measurement data.
Mattmann
M
M
Micro and Nanosystems, Department of Mechanical and Process Engineering, ETH Zurich, CH-8092 Zurich, Switzerland. moritz.mattmann@micro.mavt.ethz.ch
Roman
C
C
Helbling
T
T
Bechstein
D
D
Durrer
L
L
Pohle
R
R
Fleischer
M
M
Hierold
C
C
D004563:Electrochemistry; D004784:Environmental Monitoring; D005740:Gases / Q000032:analysis; D008962:Models, Theoretical; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D009585:Nitrogen Dioxide / Q000032:analysis*; D014173:Transistors, Electronic
D005740:Gases; D037742:Nanotubes, Carbon; D009585:Nitrogen Dioxide