Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties.
We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al(2)O(3), HfO(2), TiO(2), and Ta(2)O(5) varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta(2)O(5), while the deposition if TiO(2) appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
Robinson
Joshua A
JA
Department of Materials Science and Engineering, The Pennsylvania State University, The Electro-Optics Center, University Park, Pennsylvania 16802, USA. jrobinson@psu.edu
Labella
Michael
M
Trumbull
Kathleen A
KA
Weng
Xiaojun
X
Cavelero
Randall
R
Daniels
Tad
T
Hughes
Zachary
Z
Hollander
Mathew
M
Fanton
Mark
M
Snyder
David
D