title: Xe interacting with porous silicon.
abstract: Thin films of porous silicon (PS), structurally characterized by HR-SEM, were studied using xenon Temperature Programmed Desorption (TPD) as a probe of its inner pores. Geometric hindrance of the depth desorbing population and multiple wall collisions result in a unique double-peak structure of the TPD curve. Surface-diffusion assisted adsorption mechanism into inner pores at 48 K is proposed as the origin of these unique TPD spectra. It is experimentally verified by mild Ne(+) sputtering prior to TPD which preferentially removes Xe population from the top surfaces. A pore-diameter limited desorption kinetic model that takes into account diffusion and pore depth well explains the governing parameters that determine the experimental observations. These results suggest that TPD may be employed as a highly sensitive, non-destructive surface area determination tool.
authors.affiliation: Institute of Chemistry and the Farkas Center for Light Induced Processes, The Hebrew University of Jerusalem, 91904, Israel.
authors.forename: Assaf
authors.initials: A
authors.lastname: Paldor
authors.forename: Gil
authors.initials: G
authors.lastname: Toker
authors.forename: Yigal
authors.initials: Y
authors.lastname: Lilach
authors.forename: Micha
authors.initials: M
authors.lastname: Asscher