Properties of thiol end-capped and iodine-doped sexithiophene disulfide semiconducting polymers bridging nanogap gold electrodes.
Huang
Wei
W
Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, People's Republic of China. whuang@nju.edu.cn
Tanaka
Hirofumi
H
Ogawa
Takuji
T
You
Xiao-Zeng
XZ
D004220:Disulfides / Q000737:chemistry*; D004566:Electrodes; D006046:Gold / Q000737:chemistry*; D006576:Heterocyclic Compounds, 4 or More Rings / Q000737:chemistry*; D007455:Iodine / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D010084:Oxidation-Reduction; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D013438:Sulfhydryl Compounds / Q000737:chemistry*; D013696:Temperature; D013876:Thiophenes / Q000737:chemistry*
D004220:Disulfides; D006576:Heterocyclic Compounds, 4 or More Rings; D011108:Polymers; D013438:Sulfhydryl Compounds; D013876:Thiophenes; C520246:sexithiophene; D006046:Gold; D007455:Iodine