title: High-performance silicon nanohole solar cells.
abstract: We demonstrate Si nanohole arrays as a superior sunlight-absorbing nanostructure for photovoltaic solar cell applications. Under 1 sun AM1.5G illumination, a Si nanohole solar cell with p-n junctions via P diffusion exhibited a open-circuit voltage of 566.6 mV, a short-circuit current density of 32.2 mA/cm(2), and a remarkable power conversion efficiency of 9.51%, which is higher than that of its counterparts based on Si nanowires, planar Si, and pyramid-textured Si. The nanohole array geometry presents a novel and viable method fo cost-efficient solar energy conversion.
authors.affiliation: Department of Physics and College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China. kq_peng@bnu.edu.cn
authors.forename: Kui-Qing
authors.initials: KQ
authors.lastname: Peng
authors.forename: Xin
authors.initials: X
authors.lastname: Wang
authors.forename: Li
authors.initials: L
authors.lastname: Li
authors.forename: Xiao-Ling
authors.initials: XL
authors.lastname: Wu
authors.forename: Shuit-Tong
authors.initials: ST
authors.lastname: Lee