title: Thin film transistors using PECVD-grown carbon nanotubes.
abstract: Thin film transistors with a carbon nanotube (CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I-V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 microA mm(-1), which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 10(5), has been realized in the relatively short channel length of 10 microm. The field effect mobility of the device was 5.8 cm(2) V(-1) s(-1).
authors.affiliation: Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
authors.forename: Yuki
authors.initials: Y
authors.lastname: Ono
authors.forename: Shigeru
authors.initials: S
authors.lastname: Kishimoto
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Ohno
authors.forename: Takashi
authors.initials: T
authors.lastname: Mizutani