title: Properties of thiol end-capped and iodine-doped sexithiophene disulfide semiconducting polymers bridging nanogap gold electrodes.
authors.affiliation: Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, People's Republic of China. whuang@nju.edu.cn
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.forename: Hirofumi
authors.initials: H
authors.lastname: Tanaka
authors.forename: Takuji
authors.initials: T
authors.lastname: Ogawa
authors.forename: Xiao-Zeng
authors.initials: XZ
authors.lastname: You
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D004566:Electrodes; D006046:Gold / Q000737:chemistry*; D006576:Heterocyclic Compounds, 4 or More Rings / Q000737:chemistry*; D007455:Iodine / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry / Q000648:ultrastructure; D010084:Oxidation-Reduction; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D013438:Sulfhydryl Compounds / Q000737:chemistry*; D013696:Temperature; D013876:Thiophenes / Q000737:chemistry*
chemical_list: D004220:Disulfides; D006576:Heterocyclic Compounds, 4 or More Rings; D011108:Polymers; D013438:Sulfhydryl Compounds; D013876:Thiophenes; C520246:sexithiophene; D006046:Gold; D007455:Iodine