Ultraviolet electroluminescence from randomly assembled n-SnO(2) nanowiresp-GaN:Mg heterojunction.
Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO(2) nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO(2) nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm.
Yang
H Y
HY
School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Yu
S F
SF
Liang
H K
HK
Lau
S P
SP
Pramana
S S
SS
Ferraris
C
C
Cristiano
F
F
Cheng
C W
CW
Fan
H J
HJ
D000537:Aluminum Oxide; D004563:Electrochemistry / Q000379:methods*; D005708:Gallium / Q000737:chemistry; D008027:Light; D049449:Luminescence; D008274:Magnesium / Q000737:chemistry; D008855:Microscopy, Electron, Scanning / Q000379:methods; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry; D013499:Surface Properties; D013696:Temperature; D014466:Ultraviolet Rays
C473348:gallium nitride; D012822:Silicon Dioxide; D005708:Gallium; D008274:Magnesium; D000537:Aluminum Oxide