title: Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography.
abstract: This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.
authors.affiliation: Key Lab of Nanotechnology Promotion Center (SNPC), Shanghai 200237, People's Republic of China. zhouweimin@snpc.org.cn
authors.forename: Weimin
authors.initials: W
authors.lastname: Zhou
authors.forename: Guoquan
authors.initials: G
authors.lastname: Min
authors.forename: Zhitang
authors.initials: Z
authors.lastname: Song
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.forename: Yanbo
authors.initials: Y
authors.lastname: Liu
authors.forename: Jianping
authors.initials: J
authors.lastname: Zhang