Resistive-switching memory effects of NiO nanowire/metal junctions.
We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.
Oka
Keisuke
K
Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Yanagida
Takeshi
T
Nagashima
Kazuki
K
Kawai
Tomoji
T
Kim
Jin-Soo
JS
Park
Bae Ho
BH