An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step.
In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.
Keizer
J G
JG
Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands. j.g.keizer@tue.nl
Clark
E C
EC
Bichler
M
M
Abstreiter
G
G
Finley
J J
JJ
Koenraad
P M
PM