title: Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
authors.affiliation: Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA.
authors.forename: Sunho
authors.initials: S
authors.lastname: Jeong
authors.forename: Young-Geun
authors.initials: YG
authors.lastname: Ha
authors.forename: Jooho
authors.initials: J
authors.lastname: Moon
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D012666:Semiconductors; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D007204:Indium; C047711:indium oxide; D005708:Gallium; D015034:Zinc Oxide