Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography.
This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.
Zhou
Weimin
W
Key Lab of Nanotechnology Promotion Center (SNPC), Shanghai 200237, People's Republic of China. zhouweimin@snpc.org.cn
Min
Guoquan
G
Song
Zhitang
Z
Zhang
Jing
J
Liu
Yanbo
Y
Zhang
Jianping
J