title: Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes.
abstract: In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.
authors.affiliation: Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan.
authors.forename: Cheng-Pin
authors.initials: CP
authors.lastname: Chen
authors.forename: Pei-Hsuan
authors.initials: PH
authors.lastname: Lin
authors.forename: Yen-Jen
authors.initials: YJ
authors.lastname: Hung
authors.forename: Shao-Shun
authors.initials: SS
authors.lastname: Hsu
authors.forename: Liang-Yi
authors.initials: LY
authors.lastname: Chen
authors.forename: Yun-Wei
authors.initials: YW
authors.lastname: Cheng
authors.forename: Min-Yung
authors.initials: MY
authors.lastname: Ke
authors.forename: Ying-Yuan
authors.initials: YY
authors.lastname: Huang
authors.forename: Chun-Hsiang
authors.initials: CH
authors.lastname: Chang
authors.forename: Ching-Hua
authors.initials: CH
authors.lastname: Chiu
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: JianJang
authors.initials: J
authors.lastname: Huang