title: Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties.
abstract: We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al(2)O(3), HfO(2), TiO(2), and Ta(2)O(5) varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta(2)O(5), while the deposition if TiO(2) appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
authors.affiliation: Department of Materials Science and Engineering, The Pennsylvania State University, The Electro-Optics Center, University Park, Pennsylvania 16802, USA. jrobinson@psu.edu
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson
authors.forename: Michael
authors.initials: M
authors.lastname: Labella
authors.forename: Kathleen A
authors.initials: KA
authors.lastname: Trumbull
authors.forename: Xiaojun
authors.initials: X
authors.lastname: Weng
authors.forename: Randall
authors.initials: R
authors.lastname: Cavelero
authors.forename: Tad
authors.initials: T
authors.lastname: Daniels
authors.forename: Zachary
authors.initials: Z
authors.lastname: Hughes
authors.forename: Mathew
authors.initials: M
authors.lastname: Hollander
authors.forename: Mark
authors.initials: M
authors.lastname: Fanton
authors.forename: David
authors.initials: D
authors.lastname: Snyder