Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.
Jeong
Sunho
S
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA.
Ha
Young-Geun
YG
Moon
Jooho
J
Facchetti
Antonio
A
Marks
Tobin J
TJ
D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D012666:Semiconductors; D013696:Temperature; D015034:Zinc Oxide / Q000737:chemistry*
D007204:Indium; C047711:indium oxide; D005708:Gallium; D015034:Zinc Oxide