title: Resistive-switching memory effects of NiO nanowire/metal junctions.
abstract: We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Keisuke
authors.initials: K
authors.lastname: Oka
authors.forename: Takeshi
authors.initials: T
authors.lastname: Yanagida
authors.forename: Kazuki
authors.initials: K
authors.lastname: Nagashima
authors.forename: Tomoji
authors.initials: T
authors.lastname: Kawai
authors.forename: Jin-Soo
authors.initials: JS
authors.lastname: Kim
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park