Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors.
We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R(OFF)). However, for a low resistive state (R(ON)), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R(ON) state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.
Son
Jong Yeog
JY
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Kim
Cheol Hwan
CH
Cho
Jin Hyoung
JH
Shin
Young-Han
YH
Jang
Hyun M
HM
D025802:Electric Capacitance; D004553:Electric Conductivity; D017097:Electric Impedance; D004574:Electromagnetic Fields; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D009532:Nickel / Q000737:chemistry*; D010316:Particle Size
D009532:Nickel; C028007:nickel monoxide