Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation.
In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L(-1)). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K.
Chou
Wei-Lung
WL
Department of Safety, Health and Environmental Engineering, Hungkuang University, Sha-Lu, Taichung, Taiwan. wlchou@sunrise.hk.edu.tw
Wang
Chih-Ta
CT
Chang
Wen-Chun
WC
Chang
Shih-Yu
SY
D000327:Adsorption; D004563:Electrochemistry; D007700:Kinetics; D008420:Manufactured Materials; D010087:Oxides / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry; D012666:Semiconductors
D010087:Oxides; D010100:Oxygen