title: An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step.
abstract: In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.
authors.affiliation: Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands. j.g.keizer@tue.nl
authors.forename: J G
authors.initials: JG
authors.lastname: Keizer
authors.forename: E C
authors.initials: EC
authors.lastname: Clark
authors.forename: M
authors.initials: M
authors.lastname: Bichler
authors.forename: G
authors.initials: G
authors.lastname: Abstreiter
authors.forename: J J
authors.initials: JJ
authors.lastname: Finley
authors.forename: P M
authors.initials: PM
authors.lastname: Koenraad