Investigation of light absorption properties and acceptance angles of nanopatterned GZO/a-Si/p(+)-Si photodiodes.
In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthermore, the acceptance angle measurement reveals that the nanostructured photodiodes have larger acceptance angles than the planar structure. It also shows that the device with the nanocone structure has a higher acceptance angle than that with the nanorod structure.
Chen
Cheng-Pin
CP
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan.
Lin
Pei-Hsuan
PH
Hung
Yen-Jen
YJ
Hsu
Shao-Shun
SS
Chen
Liang-Yi
LY
Cheng
Yun-Wei
YW
Ke
Min-Yung
MY
Huang
Ying-Yuan
YY
Chang
Chun-Hsiang
CH
Chiu
Ching-Hua
CH
Kuo
Hao-Chung
HC
Huang
JianJang
J