Ultrahigh responsivity visible and infrared detection using silicon nanowire phototransistors.
Nanowire photodetectors can perform exceptionally well due to their unique properties arising from the nanowire geometry. Here we report on the phenomenal responsivity and extended spectral range of scalable, vertically etched, silicon nanowire photodetector arrays defined by nanoimprint lithography. The high internal gain in these devices allows for detection at below room temperatures of subfemtowatt per micrometer visible illumination and picowatt infrared illumination resulting from band to surface state generation.
Zhang
Arthur
A
Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0409, USA. ayzhang@ucsd.edu
Kim
Hongkwon
H
Cheng
James
J
Lo
Yu-Hwa
YH