A new system for synthesis of high quality nonpolar GaN thin films.
High quality nonpolar m-plane GaN films were successfully grown on LiGaO(2) (100) substrates for the first time. This m-plane GaN/LiGaO(2) (100) system opens a new approach for realizing highly-efficient nitride devices.
Li
Guoqiang
G
Department of Materials, University of Oxford, Parks Road, Oxford, UK OX1 3PH. guoqiang.li@materials.ox.ac.uk
Shih
Shao-Ju
SJ
Fu
Zhengyi
Z