Thermal infrared emission from biased graphene.
The high carrier mobility and thermal conductivity of graphene make it a candidate material for future high-speed electronic devices. Although the thermal behaviour of high-speed devices can limit their performance, the thermal properties of graphene devices remain incompletely understood. Here, we show that spatially resolved thermal radiation from biased graphene transistors can be used to extract the temperature distribution, carrier densities and spatial location of the Dirac point in the graphene channel. The graphene exhibits a temperature maximum with a location that can be controlled by the gate voltage. Stationary hot spots are also observed. Infrared emission represents a convenient and non-invasive characterization tool for graphene devices.
Freitag
Marcus
M
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA. mfreitag@us.ibm.com
Chiu
Hsin-Ying
HY
Steiner
Mathias
M
Perebeinos
Vasili
V
Avouris
Phaedon
P
Nano Lett. 2007 Dec;7(12):3618-22
18020473
Nat Nanotechnol. 2009 May;4(5):320-4
19421219
Phys Rev Lett. 2005 Dec 2;95(23):236802
16384327
Phys Rev Lett. 2008 Mar 28;100(12):127401
18517908
Nano Lett. 2008 Mar;8(3):902-7
18284217
Nano Lett. 2009 May;9(5):1850-5
19334687
Nat Nanotechnol. 2008 Nov;3(11):654-9
18989330
Nat Nanotechnol. 2008 Apr;3(4):206-9
18654504
Nano Lett. 2009 May;9(5):1883-8
19331421
Nano Lett. 2010 Feb 10;10(2):466-71
20041665
Phys Rev Lett. 2005 Oct 7;95(15):155505
16241738
Nat Nanotechnol. 2008 Aug;3(8):491-5
18685637
Science. 2010 Feb 5;327(5966):662
20133565
Phys Rev Lett. 2008 Nov 7;101(19):196405
19113291
Phys Rev Lett. 2000 May 15;84(20):4613-6
10990753
Science. 2008 Jun 6;320(5881):1308
18388259