title: The transition between conformal atomic layer epitaxy and nanowire growth.
abstract: Conformal atomic layer deposition of thin Sb(2)S(3) layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb(2)S(3) along surface energy gradients. On an Sb(2)Se(3) wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb(2)S(3) segment. When an Sb(2)S(3) wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany. renbin@gmail.com
authors.forename: Ren Bin
authors.initials: RB
authors.lastname: Yang
authors.forename: Nikolai
authors.initials: N
authors.lastname: Zakharov
authors.forename: Oussama
authors.initials: O
authors.lastname: Moutanabbir
authors.forename: Kurt
authors.initials: K
authors.lastname: Scheerschmidt
authors.forename: Li-Ming
authors.initials: LM
authors.lastname: Wu
authors.forename: Ulrich
authors.initials: U
authors.lastname: Gösele
authors.forename: Julien
authors.initials: J
authors.lastname: Bachmann
authors.forename: Kornelius
authors.initials: K
authors.lastname: Nielsch