Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry.
Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I(on)) in the microampere range, high on/off current ratio (I(on)/I(off)), high field-effect mobility, and uniform threshold voltage (V(th)). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I(on)/I(off) higher than 10(3), and a high yield with reproducible electrical characteristics.
Kim
Sunkook
S
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.
Kim
Seongmin
S
Park
Jongsun
J
Ju
Sanghyun
S
Mohammadi
Saeed
S
D003460:Crystallization / Q000379:methods*; D003626:Data Display; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D036103:Nanotechnology / Q000295:instrumentation*; D037742:Nanotubes, Carbon / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012031:Refractometry / Q000295:instrumentation; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D037742:Nanotubes, Carbon