The fabrication and single electron transport of Au nano-particles placed between Nb nanogap electrodes.
We have fabricated Nb nanogap electrodes using a combination of molecular lithography and electron beam lithography. Au nano-particles with anchor molecules were placed in the gap, the width of which could be controlled on a molecular scale (approximately 2 nm). Three different anchor molecules which connect the Au nano-particles and the electrodes were tested to investigate their contact resistance, and a local gate was fabricated underneath the Au nano-particles. The electrical transport measurements at liquid helium temperatures indicated single electron transistor (SET) characteristics with a charging energy of about approximately 5 meV, and a clear indication of the effect of superconducting electrodes was not observed, possibly due to the large tunnel resistance.
Nishino
T
T
Advanced Device Laboratory, RIKEN Advanced Science Institute, Wako, Saitama, Japan. nishino@riken.jp
Negishi
R
R
Kawao
M
M
Nagata
T
T
Ozawa
H
H
Ishibashi
K
K