title: Channel-length-dependent field-effect mobility and carrier concentration of reduced graphene oxide thin-film transistors.
authors.affiliation: Advanced Materials Laboratories Sony Corporation Atsugi, Kanagawa 243-0021, Japan. toshiyuki.kobayashi@jp.sony.com
authors.forename: Toshiyuki
authors.initials: T
authors.lastname: Kobayashi
authors.forename: Nozomi
authors.initials: N
authors.lastname: Kimura
authors.forename: Junbin
authors.initials: J
authors.lastname: Chi
authors.forename: Shintaro
authors.initials: S
authors.lastname: Hirata
authors.forename: Daisuke
authors.initials: D
authors.lastname: Hobara
mesh_terms: D017076:Computer-Aided Design; D004553:Electric Conductivity; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008567:Membranes, Artificial; D010087:Oxides / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D010087:Oxides; D006108:Graphite