title: Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities.
abstract: Liquid GeCl(4) precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl(4), plays a critical role for the successful formation of Ge NWs.
authors.affiliation: Department of Chemistry and Graduate Institute of Advanced Materials Science, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784, Korea.
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Song
authors.forename: Seok Min
authors.initials: SM
authors.lastname: Yoon
authors.forename: Hyun-Joon
authors.initials: HJ
authors.lastname: Shin
authors.forename: Hyunseob
authors.initials: H
authors.lastname: Lim
authors.forename: Chibeom
authors.initials: C
authors.lastname: Park
authors.forename: Hee Cheul
authors.initials: HC
authors.lastname: Choi
mesh_terms: D002712:Chlorides / Q000737:chemistry*; D005857:Germanium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D002712:Chlorides; D005857:Germanium; D012822:Silicon Dioxide