Integration of nanowire devices in out-of-plane geometry.
We report the fabrication of arrays of single and multiple out-of-plane nanowire devices on a single substrate, an important step for the fabrication of novel three-dimensional devices and the integration of individually addressable nanowires onto current Si planar technology platforms. Vertical nanowire device fabrication can greatly increase device densities; however integrating such devices into arrays with registry to the substrate requires precise control over the number and position of the nanowires. Here we report the directed assembly of gold nanoparticle seeds into patterned arrays for the growth of nanowires using chemical recognition and electrophoretic methods. Chemical recognition provides highly reproducible control of the position and number of nanoparticles per pattern element and is shown to be in good agreement with a simple electrostatic model. Individually addressed out-of-plane, vapor-liquid-solid grown Ge nanowires with single and multiple nanowires per element are fabricated and electrically characterized.
Manandhar
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Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
Akhadov
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EA
Tracy
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C
Picraux
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ST