Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities.
Liquid GeCl(4) precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl(4), plays a critical role for the successful formation of Ge NWs.
Song
Hyun Jae
HJ
Department of Chemistry and Graduate Institute of Advanced Materials Science, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784, Korea.
Yoon
Seok Min
SM
Shin
Hyun-Joon
HJ
Lim
Hyunseob
H
Park
Chibeom
C
Choi
Hee Cheul
HC
D002712:Chlorides / Q000737:chemistry*; D005857:Germanium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D010316:Particle Size; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
D002712:Chlorides; D005857:Germanium; D012822:Silicon Dioxide