The transition between conformal atomic layer epitaxy and nanowire growth.
Conformal atomic layer deposition of thin Sb(2)S(3) layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb(2)S(3) along surface energy gradients. On an Sb(2)Se(3) wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb(2)S(3) segment. When an Sb(2)S(3) wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.
Yang
Ren Bin
RB
Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany. renbin@gmail.com
Zakharov
Nikolai
N
Moutanabbir
Oussama
O
Scheerschmidt
Kurt
K
Wu
Li-Ming
LM
Gösele
Ulrich
U
Bachmann
Julien
J
Nielsch
Kornelius
K