Channel-length-dependent field-effect mobility and carrier concentration of reduced graphene oxide thin-film transistors.
Kobayashi
Toshiyuki
T
Advanced Materials Laboratories Sony Corporation Atsugi, Kanagawa 243-0021, Japan. toshiyuki.kobayashi@jp.sony.com
Kimura
Nozomi
N
Chi
Junbin
J
Hirata
Shintaro
S
Hobara
Daisuke
D
D017076:Computer-Aided Design; D004553:Electric Conductivity; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D008567:Membranes, Artificial; D010087:Oxides / Q000737:chemistry; D014173:Transistors, Electronic
D008567:Membranes, Artificial; D010087:Oxides; D006108:Graphite