Band engineering and magnetic doping of epitaxial graphene on SiC (0001).
Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.
Jayasekera
Thushari
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Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-7518, USA.
Kong
B D
BD
Kim
K W
KW
Buongiorno Nardelli
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