title: Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots.
abstract: The mechanism of high emission of InGaN-based multiple quantum wells, which exhibit exceptionally high light emission efficiency despite their high defect density, is still not fully understood. Here, we deal with this problem, showing the details of structure and formation of V defects in the multiple quantum wells and reviewing interpretations proposed so far. Then, we show a structural investigation of three-dimensional high-density quantum dots, fabricated instead of quantum wells in the active layer. The shape and size of the InGaN quantum dots and the SiN(x) masks for the growth of the dots have been revealed using high-angle annular dark field scanning transmission electron microscopy, energy dispersive X-ray spectroscopy nanoanalysis and high-resolution transmission electron microscopy.
authors.affiliation: Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, Republic of China.
authors.forename: J R
authors.initials: JR
authors.lastname: Yang
authors.forename: W C
authors.initials: WC
authors.lastname: Li
authors.forename: H L
authors.initials: HL
authors.lastname: Tsai
authors.forename: J T
authors.initials: JT
authors.lastname: Hsu
authors.forename: M
authors.initials: M
authors.lastname: Shiojiri