title: Nernst limit in dual-gated Si-nanowire FET sensors.
abstract: Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
authors.affiliation: Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
authors.forename: O
authors.initials: O
authors.lastname: Knopfmacher
authors.forename: A
authors.initials: A
authors.lastname: Tarasov
authors.forename: Wangyang
authors.initials: W
authors.lastname: Fu
authors.forename: M
authors.initials: M
authors.lastname: Wipf
authors.forename: B
authors.initials: B
authors.lastname: Niesen
authors.forename: M
authors.initials: M
authors.lastname: Calame
authors.forename: C
authors.initials: C
authors.lastname: Schönenberger