title: Unity-order index change in transparent conducting oxides at visible frequencies.
abstract: We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode.
authors.affiliation: Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA. eyalf@caltech.edu
authors.forename: Eyal
authors.initials: E
authors.lastname: Feigenbaum
authors.forename: Kenneth
authors.initials: K
authors.lastname: Diest
authors.forename: Harry A
authors.initials: HA
authors.lastname: Atwater