title: Band engineering and magnetic doping of epitaxial graphene on SiC (0001).
abstract: Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.
authors.affiliation: Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-7518, USA.
authors.forename: Thushari
authors.initials: T
authors.lastname: Jayasekera
authors.forename: B D
authors.initials: BD
authors.lastname: Kong
authors.forename: K W
authors.initials: KW
authors.lastname: Kim
authors.forename: M
authors.initials: M
authors.lastname: Buongiorno Nardelli