Depth measurements of etch-pits in GaN with shape reconstruction from SEM images.
The method, which allows shape reconstruction by reading the intensity from the scanning electron microscopy image, is presented and discussed in details. The method is applied to read the morphology of etch-pits, which were formed on the GaN surface by etching in molten KOH-NaOH eutectic mixture to delineate dislocations. The etch-pit depth distributions are obtained and used to determine densities of pits related to screw, mixed or edge-type dislocations. The results are compared with atomic force microscopy.
Wzorek
M
M
Institute of Electron Technology, Warsaw, Poland. mwzorek@ite.waw.pl
Czerwinski
A
A
Ratajczak
J
J
Lui
A
A
Iacob
E
E
Katcki
J
J