title: Single beta-AgVO3 nanowire H2S sensor.
abstract: We report the electrical transport and H(2)S sensing properties of single beta-AgVO(3) nanowire device. beta-AgVO(3) nanowires were successfully prepared by ultrasonic treatment followed by hydrothermal reaction using V(2)O(5) sol. The individual beta-AgVO(3) nanowire exhibits a "threshold switching" phenomenon. High bias (i.e., 6 V for Au contacts) is required to initially switch the individual nanowire device from nonconductive to conductive, and it may be related to the formation of nanoscale metallic Ag when enough voltage is applied between the two electrodes. This novel nanomaterial shows good H(2)S sensing performances with short response and recovery time within 20 s, relatively low response concentration of 50 ppm, and good selectivity.
authors.affiliation: State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, China. mlq@cmliris.harvard.edu
authors.forename: Liqiang
authors.initials: L
authors.lastname: Mai
authors.forename: Lin
authors.initials: L
authors.lastname: Xu
authors.forename: Qian
authors.initials: Q
authors.lastname: Gao
authors.forename: Chunhua
authors.initials: C
authors.lastname: Han
authors.forename: Bin
authors.initials: B
authors.lastname: Hu
authors.forename: Yuqiang
authors.initials: Y
authors.lastname: Pi