title: Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance.
abstract: The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.
authors.affiliation: Institute of Electron Technology, 02-668 Warsaw, Al. Lotnikow 32/46, Poland. aczerwin@ite.waw.pl
authors.forename: A
authors.initials: A
authors.lastname: Czerwinski
authors.forename: M
authors.initials: M
authors.lastname: Pluska
authors.forename: J
authors.initials: J
authors.lastname: Ratajczak
authors.forename: A
authors.initials: A
authors.lastname: Szerling
authors.forename: J
authors.initials: J
authors.lastname: Katcki