Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance.
The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.
Czerwinski
A
A
Institute of Electron Technology, 02-668 Warsaw, Al. Lotnikow 32/46, Poland. aczerwin@ite.waw.pl
Pluska
M
M
Ratajczak
J
J
Szerling
A
A
Katcki
J
J