title: Patterned growth of graphene over epitaxial catalyst.
abstract: Rectangle- and triangle-shaped microscale graphene films are grown on epitaxial Co films deposited on single-crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few-layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO(2)/Si substrate while maintaining the original shape and field-effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.
authors.affiliation: Institute for Materials Chemistry and Engineering Kyushu University Kasuga, Fukuoka 816-8580, Japan.
authors.forename: Hiroki
authors.initials: H
authors.lastname: Ago
authors.forename: Izumi
authors.initials: I
authors.lastname: Tanaka
authors.forename: Carlo M
authors.initials: CM
authors.lastname: Orofeo
authors.forename: Masaharu
authors.initials: M
authors.lastname: Tsuji
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Ikeda
mesh_terms: D003460:Crystallization / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D014173:Transistors, Electronic
chemical_list: D006108:Graphite