Unity-order index change in transparent conducting oxides at visible frequencies.
We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode.
Feigenbaum
Eyal
E
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA. eyalf@caltech.edu
Diest
Kenneth
K
Atwater
Harry A
HA