title: High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.
authors.affiliation: Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL 60208, USA.
authors.forename: Jun
authors.initials: J
authors.lastname: Liu
authors.forename: D Bruce
authors.initials: DB
authors.lastname: Buchholz
authors.forename: Robert P H
authors.initials: RP
authors.lastname: Chang
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
mesh_terms: D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008670:Metals / Q000737:chemistry*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
chemical_list: D046911:Macromolecular Substances; D008567:Membranes, Artificial; D008670:Metals; D010087:Oxides