Silicon nanowire circuits fabricated by AFM oxidation nanolithography.
We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way, uniform and well-defined transistors with channel widths in the 10-20 nm range have been fabricated. The nanowires can be positioned with sub-100 nm lateral accuracy. The transistors exhibit an on/off current ratio of 10(5). The atomic force microscope nanolithography offers full control of the nanowire's shape from straight to circular or a combination of them. It also enables the integration of several nanowires within the same circuit. The nanowire transistors have been applied to detect immunological processes.
Martínez
Ramses V
RV
Instituto de Microelectrónica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain.
Martínez
Javier
J
Garcia
Ricardo
R
D000818:Animals; D000906:Antibodies / Q000276:immunology; D015374:Biosensing Techniques / Q000379:methods; D002417:Cattle; D004867:Equipment Design; D018625:Microscopy, Atomic Force / Q000295:instrumentation / Q000379:methods*; D036103:Nanotechnology / Q000295:instrumentation / Q000379:methods*; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D010084:Oxidation-Reduction; D012710:Serum Albumin, Bovine / Q000276:immunology; D012825:Silicon / Q000737:chemistry*
D000906:Antibodies; D012710:Serum Albumin, Bovine; D012825:Silicon