title: Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.
abstract: We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.
authors.affiliation: Department of Materials Science and Engineering, National University of Singapore, 119260, Singapore. mseyj@nus.edu.sg
authors.forename: J B
authors.initials: JB
authors.lastname: Yi
authors.forename: C C
authors.initials: CC
authors.lastname: Lim
authors.forename: G Z
authors.initials: GZ
authors.lastname: Xing
authors.forename: H M
authors.initials: HM
authors.lastname: Fan
authors.forename: L H
authors.initials: LH
authors.lastname: Van
authors.forename: S L
authors.initials: SL
authors.lastname: Huang
authors.forename: K S
authors.initials: KS
authors.lastname: Yang
authors.forename: X L
authors.initials: XL
authors.lastname: Huang
authors.forename: X B
authors.initials: XB
authors.lastname: Qin
authors.forename: B Y
authors.initials: BY
authors.lastname: Wang
authors.forename: T
authors.initials: T
authors.lastname: Wu
authors.forename: L
authors.initials: L
authors.lastname: Wang
authors.forename: H T
authors.initials: HT
authors.lastname: Zhang
authors.forename: X Y
authors.initials: XY
authors.lastname: Gao
authors.forename: T
authors.initials: T
authors.lastname: Liu
authors.forename: A T S
authors.initials: AT
authors.lastname: Wee
authors.forename: Y P
authors.initials: YP
authors.lastname: Feng
authors.forename: J
authors.initials: J
authors.lastname: Ding