High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.
Liu
Jun
J
Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL 60208, USA.
Buchholz
D Bruce
DB
Chang
Robert P H
RP
Facchetti
Antonio
A
Marks
Tobin J
TJ
D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008670:Metals / Q000737:chemistry*; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D008670:Metals; D010087:Oxides