Instrumentation for the in situ control of carrier recombination characteristics during irradiation by protons.
Instrument and methods for the remote and in situ control of carrier recombination parameters during irradiation by protons of energy in the range of 3-8 MeV are presented. Direct techniques for measurements and separation of carrier recombination and trapping/generation characteristics based on the analysis of microwave probed photoconductivity transients during exposure on protons of different energies and irradiations at different temperatures are described. Simultaneously, a spectroscopy of activation energy of dominant traps has been performed before and just after irradiation by temperature scans of variation in the recombination parameters.
Gaubas
E
E
Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, Lithuania. eugenijus.gaubas@ff.vu.lt
Uleckas
A
A
Vaitkus
J
J
Raisanen
J
J
Tikkanen
P
P