Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation.
Department of Physics, Nanoscience Center, P.O. Box 35, FI-40014 University of Jyvaskyla, Finland.
Marcus
M
Rinkiö
Andreas
A
Johansson
Ville
V
Kotimäki
Päivi
P
Törmä
D003460:Crystallization / Q000379:methods; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010087:Oxides / Q000737:chemistry; D010316:Particle Size; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D010087:Oxides