Low-temperature, self-catalyzed growth of Si nanowires.
High densities of self-catalyzed Si nanowires have been grown at temperatures down to 320 degrees C on different Si substrates, whose surfaces have been roughened by simple physical or chemical treatments. The particular substrates are Si(110) cleavage planes, chemically etched Si(111) surfaces and microcrystalline Si obtained by laser annealing thin amorphous Si layers. The NW morphology depends on the growth surface. Transmission electron microscopy indicates that the NWs are made of pure Si with a crystalline core structure. Reflectivity measurements confirm this latter finding.
Istituto per la Microelettronica e i Microsistemi del Consiglio Nazionale delle Ricerche, Rome, Italy.
Massimo
M
Cuscunà
Annalisa
A
Convertino
Luigi
L
Mariucci
Guglielmo
G
Fortunato
Laura
L
Felisari
Giuseppe
G
Nicotra
Corrado
C
Spinella
Alessandro
A
Pecora
Faustino
F
Martelli