Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy.
Lee
Kimoon
K
Institute of Physics and Applied Physics, Yonsei University, Seodaemun-gu, Seoul, Korea.
Oh
Min Suk
MS
Mun
Sung-jin
SJ
Lee
Kwang H
KH
Ha
Tae Woo
TW
Kim
Jae Hoon
JH
Park
Sang-Hee Ko
SH
Hwang
Chi-Sun
CS
Lee
Byoung H
BH
Sung
Myung M
MM
Im
Seongil
S
D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D009279:Naphthacenes / Q000737:chemistry*; D055100:Optical Fibers; D017785:Photons; D013057:Spectrum Analysis / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D009279:Naphthacenes; C523499:pentacene; D015034:Zinc Oxide