Epitaxial graphene on 4H-SiC by pulsed electron irradiation.
Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.
Huang
Qingsong
Q
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100083, PR China.
Chen
Xiaolong
X
Liu
Jun
J
Wang
Wenjun
W
Wang
Gang
G
Wang
Wanyan
W
Yang
Rong
R
Liu
Yu
Y
Guo
Liwei
L