Epitaxial graphene on 4H-SiC by pulsed electron irradiation.
Controlled sublimation of silicon on a SiC surface based on pulsed electron irradiation (PEI) is presented as an effective route to quality graphene. The PEI allows us to obtain graphene in millimetre-scale within three monolayers, and is a potential candidate for preparing high quality large graphene with controlled layers.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100083, PR China.
Qingsong
Q
Huang
Xiaolong
X
Chen
Jun
J
Liu
Wenjun
W
Wang
Gang
G
Wang
Wanyan
W
Wang
Rong
R
Yang
Yu
Y
Liu
Liwei
L
Guo