Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy.
Institute of Physics and Applied Physics, Yonsei University, Seodaemun-gu, Seoul, Korea.
Kimoon
K
Lee
Min Suk
MS
Oh
Sung-jin
SJ
Mun
Kwang H
KH
Lee
Tae Woo
TW
Ha
Jae Hoon
JH
Kim
Sang-Hee Ko
SH
Park
Chi-Sun
CS
Hwang
Byoung H
BH
Lee
Myung M
MM
Sung
Seongil
S
Im
D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods; D004867:Equipment Design; D009279:Naphthacenes / Q000737:chemistry*; D055100:Optical Fibers; D017785:Photons; D013057:Spectrum Analysis / Q000295:instrumentation* / Q000379:methods; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
D009279:Naphthacenes; C523499:pentacene; D015034:Zinc Oxide