Low-temperature, self-catalyzed growth of Si nanowires.
High densities of self-catalyzed Si nanowires have been grown at temperatures down to 320 degrees C on different Si substrates, whose surfaces have been roughened by simple physical or chemical treatments. The particular substrates are Si(110) cleavage planes, chemically etched Si(111) surfaces and microcrystalline Si obtained by laser annealing thin amorphous Si layers. The NW morphology depends on the growth surface. Transmission electron microscopy indicates that the NWs are made of pure Si with a crystalline core structure. Reflectivity measurements confirm this latter finding.
Cuscunà
Massimo
M
Istituto per la Microelettronica e i Microsistemi del Consiglio Nazionale delle Ricerche, Rome, Italy.
Convertino
Annalisa
A
Mariucci
Luigi
L
Fortunato
Guglielmo
G
Felisari
Laura
L
Nicotra
Giuseppe
G
Spinella
Corrado
C
Pecora
Alessandro
A
Martelli
Faustino
F