Sandwich-type gated mechanical break junctions.
We introduce a new device architecture for the independent mechanical and electrostatic tuning of nanoscale charge transport. In contrast to previous gated mechanical break junctions with suspended source-drain electrodes, the devices presented here prevent an electromechanical tuning of the electrode gap by the gate. This significant improvement originates from a direct deposition of the source and the drain electrodes on the gate dielectric. The plasma-enhanced native oxide on the aluminum gate electrode enables measurements at gate voltages up to 1.8 V at cryogenic temperatures. Throughout the bending-controlled tuning of the source-drain distance, the electrical continuity of the gate electrode is maintained. A nanoscale island in the Coulomb blockade regime serves as a first experimental test system for the devices, in which the mechanical and electrical control of charge transport is demonstrated.
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands. c.a.martin@tudelft.nl
Christian A
CA
Martin
Jan M
JM
van Ruitenbeek
Herre S J
HS
van der Zant